SM 200050 Search Results

Contextual Info: Product Description SGA-5489 Stanford Microdevices’ SGA-5489 is a high performance cascadeable 50-ohm amplifier designed for operation at voltages as low as 3.5V. This RFIC uses the latest Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT process featuring 1 micron emitters with Ft up to 65 GHz.

Contextual Info: Product Description SGA-5286 Stanford Microdevices’ SGA-5286 is a high performance cascadeable 50-ohm amplifier designed for operation at voltages as low as 3.5V. This RFIC uses the latest Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT process featuring 1 micron emitters with Ft up to 65 GHz.

IS07816-3

Abstract: LPC 248 microcontroller ST20-TP2 st20c2 DVB-C tuner 27mhz remote control transmitter circuit express card DVB LS 5208 pinout ST20 Embedded Toolset ST20 TOOLSET
Contextual Info: w# SGS -THOMSON ^7# MD g[M I[L[I(mi[M)R!]D(gS CTon TDO ST20-TP2 PROGRAMMABLE TRANSPORT 1C FOR DVB APPLICATIONS FEATURES • Enhanced 32-bit VL-RISC CPU 0 to 40 MHz processor clock fast integer/bit operations very high code density ■ 8 Kbytes on-chip SRAM

2SD1218

Contextual Info: 2SD1218 2SD1218 NPN z f l s — i ~ M & — ' > Y > / S i NPN Planar Darlington " jJ - ' s t f f f t ¥f ^ /F ea tu res • • • /M ed iu m Speed Power Switching av 7 9 • 60 V <r>"/j.-f— r 4 t — Built-in 60 V zener diode between ¿ ’and B Unit I mm

Contextual Info: Product Description SGA-2186 Stanford M icrodevices’ SG A-2186 is a high performance cascadeable 50-ohm am plifier designed for operation at voltages as low as 2.2V. This RFIC uses the latest Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT

2SB937

Abstract: 2SB937A 2SD12 2SD1260 2SD1260A SAL package panasonic 2SB
Contextual Info: Power Transistors 2 S D 1 2 6 0 , 2SD1260, 2SD12Ó0A 2 S D 1 2 6 0 A Package D im ensions Unit ! mm Silicon NPN Triple-Diffused Planar Darlington Type 3.7 max l.lmax. 8.7 max. 6.5max. I* »I Power A m plifier C om plem enta ry Pair with 2SB937, 2SB 937A _n

2SB939

Abstract: 2SB939A 2SD1262 2SD1262A
Contextual Info: 2SD1262, 2SD1262A Power Transistors 2SD1262, 2SD1262A Package Dimensions Silicon NPN Triple-Diffused Planar Darlington Type Medium Speed Power Switching Complementary Pair with 2SB939, 2SB939A. • Features . • High DC c u rre n t gain Iifê • High speed switching '

2sb117

Abstract: 2SB1179 2SB1179A 2SD1749 2SD1749A
Contextual Info: Power T ransistors 2SB1179, 2SB1179A 2SB1179, 2SB1179A Package Dim ensions Unit I mm Silicon PNP Epitaxial Planar Darlington Type 3.7max. 7.3max. Pow er Amplifier, Switching C om plem entary Pair with 2 S D 1 7 4 9 , 2 S D 1 7 4 9 A • Features 0.9 ± 0 .1

2SD1262

Abstract: panasonic 2SD
Contextual Info: Power Transistors 2SB939, 2SB939A 2SB939, 2SB939A • Package Dimensions Unit ! mm Silicon PNP Epitaxial Planar Darlington Type 3.7 max. 8.7 max. Medium Speed Power Switching Complementary Pair with 2S D 1262, 2SD 1262A I*- * l.lmax. 6.5max. ■ Features • High DC cu rre n t gain hFE

Contextual Info: Power Transistors 2SD1261, 2SD1261A 2SD1261, 2SD1261A P ackage Dim ensions U nit ! mm Silicon NPN Triple-Diffused Planar Darlington Type 3.7 max 8.7 max. I—-*• l.l.m ax 6.5 max. Pow er Am plifier C o m plem entary Pair with 2 S B 9 3 8 , 2 S B 93 8A _n

Contextual Info: Power Transistors 2SB937, 2SB937A 2SB937, 2SB937A P ackage Dim ensions U nit : mm Silicon PNP Epitaxial Planar Darlington Type 3.7 max. 8.7 max. P ow er Am plifier, Switching C o m plem entary Pair with 2 S D 1 2 6 0 , 2 S D 1 2 6 0 A I* l.lm ax. 6.5 max.

Contextual Info: Power Transistors 2SD1262, 2SD1262A 2SD1262, 2SD1262A Package Dim ensions Unit ! mm Silicon NPN Triple-Diffused Planar Darlington Type 3.7max. 8.7max. t"—* l.l.max. 6.5 max. Medium Speed Pow er Switching Com plem entary Pair with 2SB939, 2SB939A. r— i

Contextual Info: Product Description SGA-3286 Stanford M icrodevices’ SG A-3286 is a high performance cascadeable 50-ohm am plifier designed for operation at voltages as low as 2.7V. This RFIC uses the latest Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT

Contextual Info: Product Description SGA-4186 Stanford M icrodevices’ SG A-4186 is a high performance cascadeable 50-ohm am plifier designed for operation at voltages as low as 3.3V. This RFIC uses the latest Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT

Contextual Info: Product Description SGA-3386 Stanford M icrodevices’ SG A-3386 is a high performance cascadeable 50-ohm am plifier designed for operation at voltages as low as 2.7V. This RFIC uses the latest Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT

Contextual Info: Product Description SGA-5486 Stanford M icrodevices’ SG A-5486 is a high performance cascadeable 50-ohm am plifier designed for operation at voltages as low as 3.6V. This RFIC uses the latest Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT

DC-2400 MHz 3.5V SiGe Amplifier

Abstract: A5286
Contextual Info: Product Description SGA-5286 Stanford M icrodevices’ SG A-5286 is a high performance cascadeable 50-ohm am plifier designed for operation at voltages as low as 3.5V. This RFIC uses the latest Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT

Contextual Info: Product Description SGA-2286 Stanford M icrodevices’ SG A-2286 is a high performance cascadeable 50-ohm am plifier designed for operation from a 2.7-volt supply. This RFIC uses the latest Silicon G erm a­ nium Heterostructure Bipolar Transistor SiGe HBT

Contextual Info: Product Description SGA-4286 Stanford M icrodevices’ SG A-4286 is a high performance cascadeable 50-ohm am plifier designed for operation at voltages as low as 3.3V. This RFIC uses the latest Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT

Contextual Info: Product Description SGA-4386 Stanford M icrodevices’ SG A-4386 is a high performance cascadeable 50-ohm am plifier designed for operation at voltages as low as 3.3V. This RFIC uses the latest Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT

Contextual Info: Product Description SGA-6386 Stanford M icrodevices’ SG A-6386 is a high performance cascadeable 50-ohm amplifier. This RFIC uses the latest Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT process featuring 1 micron emitters with Ft up to

2SD1216

Abstract: 2SD1218 TC325 2SD1217 C1543
Contextual Info: PANASONIC INDL/ELEK-CSEMI]- 75C D I h =135654 □□□TSMD 1 ^ _ i-s— ••►-■j.a» >*r. -a- t.*t- . - - - . w-:-a>"JT 2SD1216 K5>yX5' 2SD1216 - 3 3 - ' 5 - 1 -> !J zj y NPN 7 °I ' —j - f i Z#— ' > h V / S i NPN Planar Darlington -f "j ¥ W l / M edium S p eed P o w e r S w itch in g

PRCP-RG300

Abstract: 4532M PRCP-SM075
Contextual Info: COPAL ELECTRONICS Polymer Resettable PRCP-NSMF These series are resettable overcurrent protective devices made of Polymer PTC Thermistor. PRCP-RHT PRCP-RG Polymer Resettable Circuit Protectors These series are resettable overcurrent protective devices made of Polymer PTC Positive

TCXO SMD mtbf

Abstract: SMD INDUCTOR marking code UM smd code ml6 ACt 7199 ca TCXO mtbf 12,800 SMD MARKING CODE g25 Quartz Crystal 32.768KHz vc 1222L Quartz Crystal Oscillators 3.57MHz asfl1
Contextual Info: 22355 Abracon CORX 2-29.qxd 3/6/00 6:50 AM Page 1 ABRACON C O R P O R AT I O N A Worldwide Leading Supplier of Electronic Components Mission Statement ABRACON Corporation’s mission is to continuously grow by promoting invaluable contributions from our employees and suppliers