SL-100 TRANSISTOR Search Results

131S

Abstract: 2N3026 15149 sdt8004 SDT7413 SDT7414 SDT7415 SDT7416 SDT7417 SDT7418
Contextual Info: 25 SILICON POWER TRANSISTORS SATU RA TIO N V O LTA G E S C U R R E N T GAIN TYPE NUM BER CASE T YP E V CEO V CBO V 1 V V EBO V hFE MIN. I M AX. V CE v I 'c V CE s A v V BE(s> ! 'c V A I 'b A 5 AMP Sl LICON NPN SDT7413 SDT7414 SDT7415 TO-5 TO-5 TO-5 100 60

SL 100 NPN Transistor

Abstract: bc337-40 npn transistor transistor TE 901 Transistor BC239c SL 100 power transistor of transistor sl 100 Transistor BC413C TRANSISTOR SL 100 te 901 pnp Transistor sl 100 transistor
Contextual Info: SPRAGUE SILICON TRANSISTOR AND DIODE CHIPS POPULAR TRANSISTOR AND DIODE CHIPS ELECTRICAL CHARACTERISTICS 100% Probed Parameters BVcbo TYPE D ESCRIPTIO N Min. Volts lc @ (mA) BVceo Min. Ic V o lts @ (mA) BVeëq Min. lc Volts @ (mA) Min. Max. lc (mA) .01 tlfE

MDA380

Abstract: 4312 020 36642 MDA385 BLU99 TRANSISTOR SL 100 "2222 352"
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BLU99 BLU99/SL UHF power transistor Product specification March 1993 Philips Semiconductors Product specification BLU99 BLU99/SL UHF power transistor DESCRIPTION FEATURES N-P-N silicon planar epitaxial transistor primarily intended for use in

AUIRG4BC30S

Abstract: AUIRG4BC30
Contextual Info: AUTOMOTIVE GRADE PD - 96340 AUIRG4BC30S-S AUIRG4BC30S-SL Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR C VCES = 600V Features • Standard: optimized for minimum saturation voltage and low operating frequencies < 1kHz • Lead-Free, RoHS Compliant

transistor tt 2222

Abstract: TT 2222 npn TRIMMER capacitor 5-60 pF TT 2222 ic TT 2222 BLU99 4312 020 36642
Contextual Info: bSE T> 711002b GGti27fi7 0^7 « P H I N BLU99 BLU99/SL PHILIPS INTERNATIONAL U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor prim arily intended fo r use in m obile radio transm itters in the u.h.f. band. The transistor is also very suitable fo r application in the 900 MHz m obile radio band.

SL 100 NPN Transistor

Abstract: SL 100 NPN Transistor base emitter collector blv99 transistor sl 100
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BLV99/SL UHF power transistor Product specification September 1991 Philips Semiconductors Product specification UHF power transistor FEATURES BLV99/SL PIN CONFIGURATION • Emitter-ballasting resistors for an optimum temperature profile

Contextual Info: N AMER PHILIPS/DISCRETE b'lE D bbS3T31 0D2B774 565 « A P X BLT91/SL U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor primarily intended for use in handheld radio stations in the 900 MHz communications band. This device has been designed specifically for class-B operation.

BLU99

Abstract: BLU99/TDA3619/on4800
Contextual Info: i, One, tv TELEPHONE: 973 376-2922 (212)227-6005 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. FAX: (973) 376-8960 BLU99 BLU99/SL UHF power transistor DESCRIPTION FEATURES N-P-N silicon planar epitaxial transistor primarily intended for use in mobile radio transmitters in the u.h.f.

sot172

Contextual Info: Philips Semiconductors 711065b 0 0 b 3D^3 'ìQ l B B P H IN product specification UHF power transistor PHILIPS BLV99/SL bSE ]> INTERNATIONAL FEATURES PIN CONFIGURATION • Emitler-baflasting resistors for an optimum temperature profile • Gold metallization ensures

BLV91

Abstract: ferroxcube 1988 mda406 MDA401
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BLV91/SL UHF power transistor Product specification September 1988 Philips Semiconductors Product specification UHF power transistor BLV91/SL DESCRIPTION FEATURES NPN silicon planar epitaxial transistor designed for use in

122d transistor

Abstract: Si 122D 122d BLU11/Si 122D transistor 4312
Contextual Info: bSE. T> 711002b 00bS7D0 47T M P H I N BLU11/SL PHILIPS INT ERN ATI ON AL U.H.F. POW ER TR A N S IS TO R N-P-N silicon planar epitaxial transistor prim arily intended fo r use in mobile transmitters in the 470 MHz band. Features • multi-base structure and emitter-ballasting resistors fo r an optim um temperature profile.

Contextual Info: LESHAN RADIO COMPANY, LTD. Dual General Purpose Transistors LBC85* DW1T1G S-LBC85* DW1T1G 6 These transistors are designed for general purpose amplifier applications. They are housed in the SOT–363/SC–88 which is designed for low power surface mount applications.

Contextual Info: N AUER PHILIPS/DISCRETE ^ 5 3 1 3 1 0QSfl7b7 345 H A P X BLT90/SL b^E D A U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor primarily intended for use in handheld radio stations in the 900 M H z communications band. This device has been designed specifically for class-B operation.

Contextual Info: LESHAN RADIO COMPANY, LTD. Dual General Purpose Transistors These transistors are designed for general purpose amplifier applications. They are housed in the SOT–363/SC–88 which is designed for low power surface mount applications. LBC85* DW1T1G S-LBC85* DW1T1G

D008

Abstract: SL 100 NPN Transistor
Contextual Info: BULD25D, BULD25DR, BULD25SL NPN SILICON TRANSISTOR WITH INTEGRATED DIODE Copyright 1997, Power Innovations Limited, UK • Designed Specifically for High Frequency Electronic Ballasts • Integrated Fast trr Anti-parallel Diode, Enhancing Reliability •

BLW95

Abstract: TV power transistor datasheet BFQ68 Applications microwave rf transmitter RF Power Modules BLW50F blv862 bfg91a data sheet for BLF147 blf278 rf power
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET Line-ups RF & Microwave Power Transistors and RF Power Modules File under Discrete Semiconductors, SC19 1998 Feb 05 Philips Semiconductors RF & Microwave Power Transistors and RF Power Modules Line-ups SSB TRANSMITTERS 1.5 to 30 MHz

philips rf choke ferrite

Abstract: ferrite beat ferrite 4312 of transistor sl 100 International Power Sources mml 600 philips choke ferrite SL 100 NPN Transistor
Contextual Info: PHILIPS INTERNATIONAL bSE D 711002b 00bSb7ô 1T3 • ÎPHIN BLT92/SL H UHF POWER TRANSISTOR M PN silic o n planar e p ita x ia l tra n sisto r p rim a rily intended fo r use in handheld radio stations in the 9 0 0 M H z co m m u n ica tio n s band. T h is device has been designed s p e cifica lly fo r class-B operation.

Visil

Abstract: 100-P BUK101-50 BUK101-50DL T0220AB BUK101-500L
Contextual Info: b5E D PHILIPS INTERNATIONAL m 7110aEb DQfc.37^1 405 « P H I N Philips Semiconductors Product Specification PowerMOS transistor Logic level TOPFET_ DESCRIPTION Monolithic temperature and overload protected loaic level power MOSFET in a 3 pin plastic

MCP73861

Abstract: MCP73862 MCP73863 MCP73864 MCP7386X
Contextual Info: MCP73861/2/3/4 Advanced Single or Dual Cell, Fully Integrated Li-Ion / Li-Polymer Charge Management Controllers Features Description • Linear Charge Management Controllers - Integrated Pass Transistor - Integrated Current Sense - Reverse-Blocking Protection

TCHT1130

Abstract: Ex-90C
Contextual Info: J TELEFUNKEN ELECTRONIC 4ME D HH fi^GO^ti 001117= T E i ALG6 Optocouplers ' T ' H I - $ "J? Standard Opto Isolators w ith Transistor Output Package Type C haracteristics UL-recognized: CTR File No. E 76414 Dimensions see page 56 - _ i j bW 1T T m N ; liJ

2n6080

Abstract: SD 1062 transistor 2N3924 sd 3632
Contextual Info: ^ 7 SGS-THOMSON TELECOM AND DATA COMMUNICATIONS GiflO Ml(LgmM § RF & MICROWAVE TRANSISTORS TO 39 .380 4L STUD 130 . 230 MHz Type P/N SD SD SD SD SD .380 NARROW 4L STUD TO 60 Config. SD 1012 SD 1014-2 SD 1229-7 SD 1229-8 SD 1018 SD 1021 SD 1022 VCC (V

BF410

Abstract: BF410C BF410A BF410B BF410D
Contextual Info: 711002b G D b 7 M ö cJ 773 IPHIN BF410A to D N-CHANNEL SILICON FIELD-EFFECT TRANSISTORS Asymmetrical N-channel planar epitaxial junction field-effect transistors in a plastic T O -9 2 variant; intended fo r applications up to the V H F range. These FETs can be supplied in fou r lo s s groups. Special features are the low feedback capacitance and

Contextual Info: MCP73861/2/3/4 Advanced Single or Dual Cell, Fully Integrated Li-Ion/Li-Polymer Charge Management Controllers Features: Description: • Linear Charge Management Controllers: - Integrated Pass Transistor - Integrated Current Sense - Reverse-Blocking Protection

2SC521A

Abstract: 2SC520A 2SC519A toshiba 2sc521a 2SC319A 28C519A BA8B AC73 J002 dodo tv
Contextual Info: 2SC.519A 1 ¿so 520A 2 s c 521A SILICON NPN TRIPLE DIFFUSED MESA TRANSISTOR * 9 U x - i * t-y r m o O DC-DC 9 ft X * ffi INDUSTRIAL APPLICATIONS o Power A m p l if ie r , o DC-DC • ÎtStEET-fo Power S w itc h in g A p p lic a tio n s Co n v erter, Reg ulato r A p p l ic a t io n s ,