BLV90 Search Results

BLV90

Contextual Info: N AMER PHILIPS/DISCRETE b'ìE » • bbSa'iai QGSRllG ìb? ■ APX BLV90 J U.H.F. POWER TRANSISTOR N-P-N silicon planar e p ita xia l tra n sisto r designed fo r use in m obile rad io tra n sm itte rs in th e 9 0 0 M Hz band. Features: • diffu sed e m itter-ballasting resistors fo r an o p tim u m te m perature p ro file

sis 486

Abstract: 7z97443
Contextual Info: N AMER hRE PHILIPS/DISCRETE D • □DE'ill? 211 I IAPX BLV90/SL J U H F POWER TRANSISTOR NPN silicon planar e p ita xia l tra n sisto r designed fo r use In m o b ile rad io tra n sm itte rs in the 90 0 M Hz band. Features: • d iffu se d e m itte r-b a lla stin g resistors fo r an o p tim u m te m p e ra tu re p ro file .

SOT172D

Abstract: RF POWER TRANSISTOR NPN BLV90 MDA393
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BLV90 UHF power transistor Product specification February 1996 Philips Semiconductors Product specification UHF power transistor BLV90 DESCRIPTION FEATURES NPN silicon planar epitaxial transistor designed for use in mobile radio transmitters in the 900 MHz band.

BLV904

Abstract: smd transistor 203
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BLV904 UHF power transistor Preliminary specification File under Discrete Semiconductors, SC08b 1996 Feb 08 Philips Semiconductors Preliminary specification UHF power transistor BLV904 FEATURES APPLICATIONS • Emitter ballasting resistors for optimum

SC19a

Abstract: BLV904 SMD ic catalogue smd transistor L6 transistor SMD DK
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BLV904 UHF power transistor Product specification Supersedes data of 1996 Feb 08 1997 Jul 15 Philips Semiconductors Product specification UHF power transistor BLV904 FEATURES PINNING - SOT409B • Emitter ballasting resistors for optimum

MGH80

Abstract: TRANSISTOR SMD catalog AN98017 AN98020 AN98026 BLV909 SMD TRANSISTOR
Contextual Info: APPLICATION NOTE 9 W Linear Class-AB Amplifier with the BLV909 for 935 − 960 MHz AN98020 Philips Semiconductors 9 W Linear Class-AB Amplifier with the BLV909 for 935 − 960 MHz CONTENTS 1 INTRODUCTION 2 TRANSISTOR BACKGROUND 3 AMPLIFIER BACKGROUND 4 AMPLIFIER PERFORMANCE

Contextual Info: N AMER PHILIPS/DISCRETE bb.53331 □□33117 311 • APX BLV90/SL h3E D J V U H F POWER TRANSISTOR NPN silicon planar epitaxial transistor designed for use in mobile radio transmitters in the 900 MHz band. Features: • diffused emitter-ballasting resistors for an optimum temperature profile.

transistor smd 747

Abstract: smd transistor 203 BLV902 726 POWER TRANSISTOR
Contextual Info: Philips Semiconductors Preliminary specification UHF power transistor BLV902 FEATURES APPLICATIONS • Emitter ballasting resistors for optimum temperature profile ♦ Common emitter class-AB operation in base stations in the 820 to 960 MHz frequency range.

TRIMMER capacitor 160 pF

Abstract: 7z97443 PTFE trimmer capacitor 4312 020 36642
Contextual Info: bSE » Q 711002b QOtiBDlM 5ÖS HIPHIN BLV90/SL _ PHILIPS INTERNATIONAL_ _ U H F POWER TRANSISTOR NPN silicon planar epitaxial transistor designed fo r use in m obile radio transm itters in the 900 MHz band. Features: • diffused emitter-ballasting resistors fo r an optim um temperature profile.

l14 254

Abstract: AN98017 transistor 935 SMD AL SMD transistor 821 ceramic capacitor Philips 2222-581 TRANSISTOR SMD catalog AN98019 AN98026 BLV904
Contextual Info: APPLICATION NOTE 5 W Class-AB Amplifier with the BLV904 for 935 − 960 MHz AN98019 Philips Semiconductors 5 W Class-AB Amplifier with the BLV904 for 935 − 960 MHz Application Note AN98019 INTRODUCTION This application note contains information on a 5 W class-AB amplifier based on the SMD transistor BLV904. The

ma-6008

Contextual Info: bSE D El 711Qä2b 0Gb3D14 5öS HIPHIN BLV90/SL _ PHILIPS INTERNATIONAL_ _ U H F POWER TRANSISTOR N PN silicon planar epitaxial transistor designed for use in mobile radio transmitters in the 9 0 0 M H z band. Features: • diffused emitter-ballasting resistors for an optim um temperature profile.

Contextual Info: N AUER PHILIPS/MSCRETE b^E » • bbS 3131 0 0 2 ^ 1 1 0 'lb? « A P X BLV90 _ J V U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor designed for use in mobile radio transmitters in the 900 MHz band. Features: • diffused emitter-ballasting resistors for an optimum temperature profile

smd 7BA

Abstract: BLV902 1.B smd transistor
Contextual Info: Philips Semiconductors Preliminary specification UHF power transistor BLV902 FEATURES APPLICATIONS • Emitter ballasting resistors for optimum temperature profile • Common emitter class-AB operation in base stations in the 820 to 960 MHz frequency range.

2N5715

Abstract: 2SC1255 nec RF package SOT89 2N4262 diode GG 14 S02369A 2n4073 BF844 MRF-604 2SC3601E
Contextual Info: RF POWER SILICON NPN Item Number I C 5 10 15 20 30 2SC2954 BLU98 BLV90/SL BLV99 BF391Wl 2N4924 2N4925 2SC4165(Al gg~~~ 35 40 BCY66 MM3000 SM2285 ST3000 2SC3071 MM3001 RXT3904 RXT3904 ~rc~~g~ 45 50 2SC4046 BSV52R (A) BSV52R (A) SOR2369 (A) 2SC3953 2SC3782

Motorola transistors MRF 947

Abstract: trimpots 3296 transistor C5386 1n4740 2N5591 Motorola 2N5688 CQ 542 Transistor npn motorola equivalent transistor of 2sc3358 HB215/D ic cd 2399 gp
Contextual Info: Selector Guide 1 Discrete Transistor Data Sheets Amplifier Data Sheets Monolithic Integrated Circuit H Data Sheets mm Case Dimensions Cross Reference and Sales Offices 6 M MOTOROLA RF Device Data This publication presents technical information for the several product families that

BPW22A

Abstract: cm .02m z5u 1kv pin configuration of BFW10 la4347 B2X84 TDA3653 equivalent TRIAC TAG 9322 HEF40106BP equivalent fx4054 core dsq8
Contextual Info: Contents Page Page New product index Combined index and status codes viii x Mullard approved components BS9000, CECC, and D3007 lists CV list Integrated circuits Section index xliii 1 5 Standard functions LOGIC FAMILIES CMOS HE4000B family specifications CMOS HE4000B family survey

bf0262a

Abstract: BF0262 OM335 1N5821ID OM336 OM2061 OM926 BUK645 OM2060 BLY94
Contextual Info: Alphanumeric Type Index Typo Page Type Page Type Page Page Type 1N821 1N821A 1N823 1N823A 1N825 11 11 11 11 11 1N5227B 1N5228B 1N5229B 1N5230B 1N5231B 13 13 13 13 13 2N2905A 2N2906 2N2906A 2N2907 2N2907A 17 17 17 17 17 2N6599 2N6600 2N6601 2N7000 2N7002 1N825A

PCA1318P

Abstract: philips Pca1318p tda8369 TEA5713 pca1318 ON4801 92112 eeprom on4800 ON4836 eeprom 92112
Contextual Info: PRODUCT DISCONTINUATION DN42 NOTICE December 31, 1999 CONTRACTS DEPT. NOTE NEW CODING DISCONTINUATION TYPE CODE T= Type number fully withdrawn N= Packing option ONLY withdrawn SOURCE CODE C = Customer specific product M = Multi source product S = Sole source product

BLV909

Abstract: AN98017 BLV2042 BLV904
Contextual Info: APPLICATION NOTE Mounting consideration for SOT409 ceramic SO-8 devices AN98017 Philips Semiconductors Mounting consideration for SOT409 (ceramic SO-8) devices CONTENTS 1 INTRODUCTION 2 MOUNTING OF SOT409B DEVICES 3 HEATFLOW IN APPLICATION 4 IMPORTANT FACTORS FOR THERMAL

transistor f6 13003

Abstract: equivalent transistor bj 131-6 transistor Eb 13003 BM BB112 smd TRANSISTOR code marking 2F 6n a1211 lg CQY58 BU705 TRANSISTOR 131-6 BJ 026 philips om350
Contextual Info: W IDEBAND TRANSISTORS AND W IDEBAND HYBR ID 1C MODULES page P refa ce. 3 Selection guide Wideband transistors.

MHW721A2

Abstract: 13001 S 6D TRANSISTOR atv5030* motorola 2N5591 MOTOROLA 13001 6D TRANSISTOR BGY41 MHW710-1 construction linear amplifier 2sc1945 7119 amperex bf503
Contextual Info: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide Amplifier Data Sheets 5 Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions 8 Cross Reference and Sales Offices 9 MOTOROLA RF DEVICE DATA

BLY32

Abstract: blf278 108 amplifier Philips Application BLX15 RF Power Amplifiers bgy55 blw95 BLF543 BFQ43 BLW33 blf177 108 amplifier
Contextual Info: 83 RF/Microwave Devices Video Amplifiers Video Amplifier Line-Ups Application Preamp Stage B & W high resolution colour high resolution OM3016 OM925 OM975 OM3026 OM925 OM975 Output Stage OM976 Wideband Transistors for Application in Video Output Amplifiers in Monitors

122d

Abstract: BLU98 ON4612 sot37 172d BLV100
Contextual Info: 62 RF/Microwave Devices Bipolar RF Transmitting Transistors SHF 900 MHz Package Outline Type No. Load Power W @ 900 MHz Power Gain (dB) @ 900 MHz Supply Voltage (V) 0.075 0.075 0.16 0.16 0.4 0.75 0.8 1.2 1 1.5 1.5 3 0.75 1.5 3 6 7.5 9.5 7 9 6.8 5.3 6 6 7

ph 4148 zener diode

Abstract: philips zener diode ph 4148 pcf0700p Zener Diode ph 4148 PCA1318P ck2605 pcf0700p/051 philips Pca1318p on4673 Zener Diode 4148
Contextual Info: PHILIPS SEMICONDUCTORS PRODUCT DISCONTINUATION NOTICE NUMBER DN-40 DATED DECEMBER 31, 1998 EXHIBIT 'A' PHILIPS PHILIPS PHILIPS PART NUMBER PKG PART DESCRIPTION LAST TIME LAST TIME REPLACEMENT STATUS 12 NC NUMBER BUY DATE DLVY DATE PART CODE S COMMENTS DISCONTINUED INTEGRATED CIRCUIT PRODUCTS