SILO Search Results

NSL-4460

Abstract: NSL-4470 NSL-4450 FTC 580 e/NSL-801
Contextual Info: SILONEX INC 23E BSSS571 GDQGa'iT □ SILONEX; 1 W A T T PHOTOCONDUCTIVE CELLS NSL-4400 SERIES FEATURES • High Power Dissipation Capability @ 25° C: 1000 mW - Hermetically Sealed 500 mW - Plastic Encapsulated 750 mW on demand* - Plastic Encapsulated • Maximum Operating Voltage:

NSL-701

Abstract: NSL-803
Contextual Info: Ö2SS271 G0Q0304 □ S3E 0 S I L O N E X INC SILONEX c SILICON PHOTOVOLTAIC CELLS FEATURES • • • • • • • Fast re spo nse High reliability, long life Protective, humidity resistant coating Operating Temperature Range: -65°C to 125°C Ideal for moderate reverse bias voltage operation

Contextual Info: SLSD-71N1 SILO NEX Solderable Planar Photodiode Features • Visible to IR spectral range • High reliability, oxide passivation • High open circuit voltage • Linear short circuit current • Low capacitance, high speed • Solderable contacts 0.200 0.040

power LED 650nm

Abstract: 1/Detector/"Detector IC"/"CD"/NSL-4960 NSL-4960 photoconductive cell cdse
Contextual Info: 5 OC 8255271 SILONEX INC SILO N EX SD IN C 0 0 2 1 9 _ 0 DE~Jfl25S271 t -4 1 -4 1 0 0 □□5 n 1 e] T r LU N tX TO-8 PHOTOCONDUCTIVE CELLS FEATURES NSL-2900, 3900, 4900 SERIES TO-8 • Th ree P h o to co n d u ctiv e M aterials • Po w er D issip atio n @ 25° C:

NSL-9510

Abstract: PLT-10585 CLM6000 NSL-4960 CL5M2L cl5m9m clairex clm6500 Clairex CL703L NSL-5540
Contextual Info: SILONEX/CLAIREX EQUIVALENTS HERMETICS TO-5 HERMETIC TO-18 HERMETIC Silonex P/N Clairex P/N Silonex P/N Clairex P/N NSL-3510 NSL-3530 NSL-3540 NSL-4510 NSL-5510 NSL-5530 NSL-5540 NSL-6510 NSL-6530 NSL-7 5 10 NSL-7530 NSL-754 0 NSL-7550 NSL-9510 CL703L CL703A

silonex NSL

Contextual Info: SILONEX NSL-32 & NSL-32AA OPTOISOLflTORS . CHARACTERISTICS . TEST CONDITIONS . MIN. I .HSL-32. TYP. HAX. . HIN. NSL-32AA TYP. HAX. . . UNITS . -1 c r u 1F .Max f«d. current VF Forward voltage IR Reverse current <0 40 •a IF=16aA 2.0 2.0 volts Vr=4V 100 100

Contextual Info: SILONEX INC I.2 6 ± .0 5 l .6 9 / .5 8 1 ELECTRICAL SPEC. CONTROL LAMP L I F E 5000 HRS TYP e & 1 Ip Vr (VOLTS 1 I0HM51 (Mohms1 MIN MAX 300 900 Tr Td 100K(mSEC (mSEC) IraA) typ R (OHMSI MAX 17 1 3 .2 550 90 1 0 1 0 0 0GGG3b7 16 OUTPUT RESISTANCE flSSSE?!

NSL-7550

Abstract: 67Meg 200MEG NSL-7530 320v Silonex
Contextual Info: SILONEX ; Prelim inary Data Sheet TO -5 PHOTOCONDUCTIVE CELLS MATURES • S ix Photoconductive Materials • Power Dissipation @ 25°C 200 mW - Hermetically Sealed 12f5 mW - Plastic Encapsulated • Resistance Tolerance: ± 40% @ 1 Ftc ± 3 3 - 1 / 3 % & 2 Ftc

NSL-4960

Abstract: NSL-4980 NSL-7910 4980 NSL-5910 NSL-4970 nsl 4960 NSL-4950 NSL-6910 silonex NSL
Contextual Info: TO-8 Photocells Hermetic Package Features • Five Photoconductive Materials • Tolerance: ±40% @1 ftc, ±33% @ 2 ftc Description The Silonex TO-8 series of photoconductive provide up to eight standard resistance ranges in CdS or CdSe materials. Absolute Maximum Ratings

LA12

Abstract: SLCD-61N4 SLSD-71N4
Contextual Info: SLSD-71N4 Solderable Planar Photodiode Features • Visible to IR spectral irradiance range • High reliability • Oxide passivation • Low capacitance, high speed • Protective coating 1.0 25.4 150 5.1 2.5 Description The Silonex series of silicon solderable planar

LA12

Abstract: SLCD-61N6 SLSD-71N6
Contextual Info: SLCD-61N6 Solderable Planar Photodiode Features • Visible to IR spectral irradiance range • High reliability • Oxide passivation • Linear short circuit current • Low capacitance, high speed Description The Silonex series of silicon solderable planar

HV200

Abstract: Si3N4
Contextual Info: HA-2640/883 Die Characteristics DIE DIMENSIONS: 93 x 68 x 19 mils ± 1 mils 2360 x 1720 x 483µm ± 25.4µm METALLIZATION: Type: Al, 1% Cu Thickness: 16kÅ ± 2kÅ GLASSIVATION: Type: Nitride Si3N4 over Silox (SiO2, 5% Phos.) Silox Thickness: 12kÅ ± 2kÅ

Contextual Info: TOSHIBA 2SC1959 2SC1959 TO SHIBA TRANSISTOR SILOCON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm A U D IO FREQUENCY LO W POWER AMPLIFIER APPLICATIONS DRIVER STAGE AMPLIFIER APPLICATIONS SW ITCHING APPLICATIONS • . 5.1 M A X . Excellent hpg Linearity : hpE (2) = 25 (Min.) : V çe = 6V, Iç = 400mA

Contextual Info: TOSHIBA 2SC2240 TOSHIBA TRANSISTOR SILOCON NPN EPITAXIAL TYPE PCT PROCESS 2SC 2240 LOW NOISE AUDIO AMPLIFIER APPLICATIONS The 2SC2240 is a transistor for low frequency and low noise applications. This device is designed to lower noise figure in the region of low signal source impedance, and to lower the pulse

16 Photodiode-Array

Abstract: LA12 74A1 Photodiode Array
Contextual Info: SLD-74A1/16 Photodiode Array Features • • • • • • 16 element monolithic array Wide acceptance angle Low capacitance, fast switching time Low leakage current Linear response vs irradiance 18 pin dual in-line package Description This Silonex photodiode array consists of a line of 16

NSL-4962

Abstract: NSL-4932 4932 NSL-4912 photocells* nsl NSL-4922 NSL-4942 NSL-4952 5942 NSL-4982
Contextual Info: TO-8 Photocells Ceramic Package Features • Three photoconductive materials • Tolerance: ±40% @1 ftc, ±33% @ 2 ftc Description The Silonex TO-8 series of photoconductive cells provide up to eight standard resistance ranges in CdS or CdSe materials. Most of these devices are also

LA12

Abstract: SLED-56HF3A SLED-56HF3B SLED-56HF3C
Contextual Info: SLED-56HF3 GaP Light Emitting Diode Features • High output at low current • Very wide emission angle • Multiple power ranges • TO-46 flat window package CATHODE Common to case 3.9 0.8 Description The Silonex SLED-56HF3 is a high output Gallium Phosphide light emitting diode which produces a peak

NSL-4960

Abstract: photoconductive cell cdse silonex NSL cdse Photoconductive Cell Silonex NSL-395 PHOTOCELL NSL-2930 NSL-2940
Contextual Info: SILONEX INC 53E [ • ÛE55271 QDOOST? 7 ■ SILONEX i TO-8 PHOTOCONDUCTIVE CELLS f "F4|-4 FEATURES NSL-2900, 3900, 4900 SERIES • Three Photoconductive Materials TO-8 • Power Dissipation @ 25° C: 500 mW - Hermetically Sealed 250 mW - Plastic Encapsulated

Silonex

Abstract: Cds silonex KSL75 Silonex NSL-7530 NSL-7530 NSL-5540 15037 mos 6522 5s72 NSL-4560
Contextual Info: SILONEX INC 47E Û5SS271 D D0Qa3M4 1 SXI SILONEX Preliminary Data Sheet T O -5 PHOTOCONDUCTIVE CELLS I n c FEATURES • S ix Photoconductive Materials • Power Dissipation @ 25°C 200 mW - Hermetically Sealed 125 mW—Plastic Encapsulated • Resistance Tolerance: ± 40% @ 1 Ftc

Contextual Info: T O SH IB A RN2407,RN2408,RN2409 TOSHIBA TRANSISTOR SILOCON PNP EPITAXIAL TYPE PCT PROCESS RN2407, RN2408, RN2409 Unit in mm SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS I- 0.5 • • • • With Built-in Bias Resistors

toshiba 2SC732

Abstract: 2SC732TM
Contextual Info: 2SC732TM TOSHIBA TRANSISTOR SILOCON NPN EPITAXIAL TYPE PCT PROCESS 2SC732TM LOW NOISE AUDIO AMPLIFIER APPLICATIONS Unit in mm High Breakdomn Voltage : VCEO = 50V Excellent hFE Linearity : hFE (IC = 0.1mA)/hFE (IC = 2mA) = 0.95 (Typ.) Low Noise : NF (1) = 0.5dB (Typ.) (f = 100Hz)

2SC4249

Contextual Info: T O S H IB A 2SC4249 TOSHIBA TRANSISTOR SILOCON NPN EPITAXIAL PLANAR TYPE 2SC4249 TV VHF RF AMPLIFIER APPLICATIONS • • • High Gain : Gpe = 24dB Typ. (f=200MHz) Low Noise : NF = 2.0dB (Typ.) (f=200MHz) Excellent Forward AGC Characteristics MAXIMUM RATINGS (Ta = 25°C)

Contextual Info: SILONEX INC SÎLONEX 0255271 0000350 1 47E D SL E D -561L S L E D -561F SL E D -561E SXI SLED-561L SLED -56IF SLED-56IE . 940 nm INFRARED EMITTER G e n e ra l D e s c r ip tio n The S ilo n e x SLED-561 i s a h ig h o u tp u t G a lliu m A rs e n id e i n f r a r e d e m i t t e r w hich

61N5

Abstract: SLSD-71N5 SLCD-61N5
Contextual Info: i ' l 5ÏL0N €X SLCD-61N5 n — PRELIMINARY Solderable Planar Photodiode Features • Visible to IR spectral irradiance range • High reliability • Oxide passivation • Linear short circuit current • Low capacitance, high speed Description The Silonex series of silicon solderable planar