SILICON UNILATERAL SWITCH Search Results

NTE6404

Abstract: four-layer diode Silicon unilateral switch four layer diode SCR 30v
Contextual Info: NTE6404 Silicon Unilateral Switch SUS Description: The NTE6404 is a silicon planar, monolithic integrated circuit having thyristor electrical characteristics closely approximating those of an “ideal” four layer diode. The device is designed to switch at 8 volts

Contextual Info: ^Semi-Conductor ^Products., fine. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 2N4988 Silicon unilateral switch (SUS) in package TO-92 Pinouts: 1-Cathode, 2-Gate, 3-Anode Ratings rrm lT<rms>

3N81

Abstract: IN4148 anode cathode 2N4983 3N84 eto thyristor thyristor igc TRANSISTOR BO 344 2N4987 2N4985 thyristor eto
Contextual Info: SILICON UNILATERAL AND BILATERAL SWITCHES SUS, SBS The General E le c tric S U S is a s ilic o n , planar m on olith ic integrated c irc u it having th yristo r e le ctrica l ch a ra cte ris tics clo se ly a pproxi­ m ating those of an '‘id ea l” fo u r-la yer diode. Th e d e vice is designed to sw itch at 8 vo lts w ith a typ ica l tem perature coefficient of

2N2646 equivalent

Abstract: SUS-2N4989 2N4988 2N4991 3N81 3n84 D5K2 20 amp 800 volt triac 2N4983 EQUIVALENT 2N1671
Contextual Info: UNIJUNCTIONS, TRIGGERS AND SWITCHES Since the introduction of the commercial silicon unijunction transistor in 1956, General Electric has continued de­ veloping an extensive line of negative resistance threshold and four-layer switch devices. Each of these devices can

ujt transistor 2n2160

Abstract: 2N2160 2N602B General electric SCR 2n2222 germanium UJT 2N2646 2N4891 2n2646 ujt UJT 43 Programmable Unijunction Transistor applications of ujt with circuits
Contextual Info: UNIJUNCTIONS, TRIG G ERS AND SWITCHES Since the introduction of the commercial silicon unijunction transistor in 1956, General Electric has continued de­ veloping an extensive line of negative resistance threshold and four-layer switch devices. Each of these devices can

2N4985

Abstract: 2N2646 cross reference 2N4984 2n2646 equivalent 2N2646 2N4983 2N4991 GE SCR cross reference 2n4992 EQUIVALENT 2N1671
Contextual Info: UNIJUNCTIONS, TRIGGERS AND SWITCHES S in c e th e intro du ctio n o f th e co m m ercial silic o n u n iju n c tio n tran sisto r in 1 9 5 6 , G eneral E le c tric has co n tin u e d d e­ velop ing an extensive lin e o f negative resistan ce th resho ld an d fo u r-lay er sw itch devices. Each o f th ese devices can

2n2646 equivalent

Abstract: SUS-2N4986 IN5059 3N84 2N4987-90 SUS 2N4987 2N4987 equivalent ge motor capacitor cross reference equivalent transistor of 2n6027 CIRCUITS BY USING 2N6027
Contextual Info: UNIJUNCTIONS, TRIGGERS AND SWITCHES S in c e th e intro du ctio n o f th e co m m ercial silic o n u n iju n c tio n tran sisto r in 1 9 5 6 , G eneral E le c tric has co n tin u e d d e­ velop ing an extensive lin e o f negative resistan ce th resho ld an d fo u r-lay er sw itch devices. Each o f th ese devices can

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors NP0A547 Silicon NPN epitaxial planar type Unit: mm For high-speed switching 0.12+0.03 -0.02 4 2 3 0.10 1 (0.35) (0.35) 1.00±0.05 (0.10) Display at No.1 lead • Basic Part Number

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors NP0A547 Silicon NPN epitaxial planar type Unit: mm For high-speed switching 0.12+0.03 -0.02 4 2 3 0.10 1 (0.35) (0.35) 1.00±0.05 (0.10) Display at No.1 lead • Basic Part Number

mps901

Abstract: MRF901
Contextual Info: MOTOROLA Order this document by MMBR901LT1/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon MMBR901LT1, T3 High-Frequency Transistor MPS901 MRF901 Designed primarily for use in high–gain, low–noise small–signal amplifiers for operation up to 2.5 GHz. Also usable in applications requiring fast switching

2n2646 equivalent

Abstract: 2N2646 triac phase control 2N602B 2N4991 EQUIVALENT 2N1671 four-layer diode SBS thyristor 2N4987 3n84
Contextual Info: UNIJUNCTIONS, TRIGGERS AND SWITCHES Since the introduction of the commercial silicon unijunction transistor in 1956, General Electric has continued de­ veloping an extensive line of negative resistance threshold and four-layer switch devices. Each of these devices can

2SC5829

Abstract: NP0A547
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors NP0A547 Silicon NPN epitaxial planar type Unit: mm For high-speed switching 0.12+0.03 -0.02 4 1 2 0 to 0.02 3 0.10 M Di ain sc te on na tin nc ue e/ d (0.35) (0.35) 1.00±0.05

UJT 2N2646 specification

Abstract: UJT 2N2646 ratings UJT 2N2646 UJT 2N2646 operation 2n2646 ujt D5K2 ujt 2N6027 ujt transistor scr firing circuit UJT triggering circuit UJT 2N2646 RANGE
Contextual Info: UNIJUNCTIONS, TRIGGERS AND SWITCHES Since the introduction of the commercial silicon unijunction transistor in 1956, General Electric has continued de­ veloping an extensive line of negative resistance threshold and four-layer switch devices. Each of these devices can

2N2646

Abstract: unijunction transistor transistor put 2n6028 2n2646-47-low 2N6028 Unijunction D13K1 Programmable Unijunction Transistor PUT 2N6028 SCR 2N2646
Contextual Info: UNIJUNCTIONS COMPLEMENTARY— D5K SERIES The D5K offers the ultimate in unijunction stability and uniformity. Low frequency oscillators and timers can be built using the D5K with better than 1.0% accuracy over extended temperature ranges. The D5K has characteristics like

UJT 2N2646 specification

Abstract: UJT 2N2646 2n2646 ujt applications of ujt CIRCUITS BY USING 2N6027 applications of ujt with circuits 2N6028 scr firing circuit UJT triggering circuit unijunction application note D5K1
Contextual Info: UNIJUNCTIONS, TRIGGERS AND SWITCHES Since the introduction of the commercial silicon unijunction transistor in 1956, General Electric has continued de­ veloping an extensive line of negative resistance threshold and four-layer switch devices. Each of these devices can

NTE6405

Abstract: triac diac applications circuit diagram
Contextual Info: SILICON ASYMMETRICAL AC TRIGGER SAS N T E Type N u m ber C a se Style Diagram N um ber S w itc h in g V oltag es (Volts) Vs2 V S1 T098 6405 386 M in M ax M in M ax 14 18 7 9 Sw itch in g C urre n t <mA> Forw ard Voltage Drop (Volts) O ff-S ta te Current

GE TRIAC SC40B

Abstract: 2n4992 3N84 SC40B transistor 2n4992 2N4992 equivalent 2n2646 equivalent triac 9012 SBS thyristor Triac 50 amp 250 volt
Contextual Info: UNIJUNCTIONS, TRIGGERS AND SWITCHES S in c e the introduction of the com m ercial s ilic o n unijunction tran sistor in 1956, General Ele ctric ha s continued de­ velop in g an extensive line of negative re sistan ce threshold and four-layer sw itch devices. E a ch of these devices can

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors NP0A547 Silicon NPN epitaxial planar type Unit: mm For high-speed switching 0.12+0.03 -0.02 4 M Di ain sc te on na tin nc ue e/ d • SSS-Mini type package, reduction of the mounting area and assembly cost by one half

2n2646 equivalent

Abstract: 2N2646 replaced by UJT 2N2646 ujt 2N6027 D13T1 CIRCUITS BY USING 2N6027 2n2646 ujt ujt transistor equivalent 2n2646 applications of ujt with circuits
Contextual Info: UNIJUNCTIONS, TRIGGERS AND SWITCHES Since the introduction of the commercial silicon unijunction transistor in 1956, General Electric has continued de­ veloping an extensive line of negative resistance threshold and four-layer switch devices. Each of these devices can

UJT 2N2646

Abstract: UJT 2N2646 specification 2n2646 ujt SCR 2N2646 PUT 2N2646 2N2646 2N2647 SCR firing inverter circuit UJT 2N2646 ratings 2N4891
Contextual Info: UNIJUNCTIONS, TRIG G ERS AND SWITCHES S in c e the introduction of the com m ercial s ilic o n unijunction tran sistor in 1956, General Ele ctric ha s continued de­ velop in g an extensive line of negative re sistan ce threshold and four-layer sw itch devices. E a ch of these devices can

UJT 2N2646

Abstract: 2n2646 ujt UJT 2N2646 POWER RATING UJT 2N2646 specification applications of ujt ujt transistor 2n2160 UJT 2N2646 operation UJT 2N491 UJT APPLICATION UJT 2N2646 ratings
Contextual Info: U N IJU N C TIO N S, TR IG G E R S A ND SWITCHES Since the introduction of the commercial silicon unijunction transistor in 1956, General Electric has continued de­ veloping an extensive line of negative resistance threshold and four-layer switch devices. Each of these devices can

four-layer diode

Abstract: transistor 2N4983 2N4992 D13V1 2N4983 2N4990 2N4991 2N4985 2n4989 RA3A
Contextual Info: SPECIAL SILICON PRODUCTS REFERENCE AMPLIFIERS > V c« = 3 Volts, lc= 0.1 m A , lz= 5 m A , Rb= 1K 2 At Vc e = 3V, lc = .lm A SPECIAL SILICON PRODUCTS INTEGRATED VOLTAGE REGULATOR IVR D13V SERIES The D13V is a monolithic integrated voltage regulator circuit. Designed for use as a shunt voltage regulating ele­

2n2646 equivalent

Abstract: 2N4991 2N4991 equivalent Silicon unilateral switch SBS thyristor 2n4991 2N2646 equivalent transistor of 2n6027 low voltage scr THYRISTOR A2f 2N4985
Contextual Info: UNIJUNCTIONS, TRIGGERS AND SWITCHES Since the introduction of the commercial silicon unijunction transistor in 1956, General Electric has continued de­ veloping an extensive line of negative resistance threshold and four-layer switch devices. Each of these devices can

diac SBS 14

Abstract: DIAC EQUIVALENT circuit DIAC 1n5760 DIAC EQUIVALENT SBS thyristor 1N5760 DIAC application MOTOROLA SCR CIRCUITS BY USING 2N6027 DIAC thyristor application
Contextual Info: MOTOROLA SEMICONDUCTOR r APPLICATION NOTE AN964 T rig g e r D esign Ideas for D iac Replacem ents INTRODUCTION T h e fam ily o f d e v ic e s d e sig n e d for controlling S C R s and triacs are called triggers. T h e m ore c o m m o n trigge rs are unijunction tra n sisto rs, p ro g ra m m a b le unijunction