SILICON DETECTOR Search Results

diodes

Abstract: em 434 IMPATT gunn diodes Tuning Varactors varactors GUNN Diodes high frequency step recovery diodes PIN diodes
Contextual Info: M icro w ave S em ico nducto rs Contents PAGE Schottky Diodes Silicon Schottky Mixer Diodes . 404 Silicon Schottky Detector Diodes 408 Frequency Multiplier Diodes Silicon Step Recovery Diodes GaAs Multiplier Varactors Tuning Varactor Diodes Silicon Tuning Varactors

dh340

Abstract: rf detector diodes
Contextual Info: SILICON SCHOTTKY DIODES Silicon Schottky barrier detector diodes SILICON SCHOTTKY BARRIER DETECTOR DIODES Description Silicon Schottky barrier detector diodes are available as: • packaged diodes • chip They are optimized for wide band applications, in the frequency range from 1 to 18 GHz.

Contextual Info: SILICON SCHOTTKY DIODES Silicon Schottky barrier detector diodes SILICON SCHOTTKY BARRIER DETECTOR DIODES Description Silicon Schottky barrier detector diodes are available as: • packaged diodes • chip They are optimised for wide band applications, in the frequency range from 1 to 18 GHz.

Contextual Info: SILICON SCHOTTKY DIODES Silicon Schottky barrier detector diodes SILICON SCHOTTKY BARRIER DETECTOR DIODES Description Silicon Schottky barrier detector diodes are available as: • packaged diodes • chip They are optimized for wide band applications, in the frequency range from 1 to 18 GHz.

DH323

Contextual Info: SILICON SCHOTTKY DIODES Selection guide SILICON SCHOTTKY DIODES Selection Guide PAGE SCHOTTKY BARRIER DETECTOR DIODES 1-29 SCHOTTKY BARRIER MIXER DIODES 1-30 1-28 SALES OFFICES: VISIT OUR WEB SITE AT http://www.temex.net SILICON SCHOTTKY DIODES Silicon Schottky barrier detector diodes

MD7002

Abstract: RB2K MD7002A MD7002B IB 6407 02k02
Contextual Info: MD7002 silicon MD7002A MD7002B NPN SILICON ANNULAR MULTIPLE TRANSISTORS NPN SILICON MULTIPLE TRANSISTORS . . . designed for use as differential am plifiers, dual general-purpose am plifiers, front end detectors and temperature compensation applications.

md8003

Abstract: md8002 md8001 65407
Contextual Info: MD8001 SILICON MD8002 MD8003 NPN SILICON MULTIPLE TRANSISTORS MULTIPLE SILICON ANNULAR TRANSISTORS . . . designed for use as differential amplifiers, dual general-purpose amplifiers, front-end detectors and tem perature compensation ap­ plications. •

MBS4992

Abstract: MBS4991 equivalent MBS4991 triac phase control circuits triac phase control B50C bidirectional switch scr triggering
Contextual Info: MBS4991 silicon MBS4992 SILICON BIDIRECTIONAL SWITCH (PLASTIC) 6.0-10 VOLTS 500 mW SILICON BIDIRECTIONAL SWITCH . . . designed for full-wave triggering in Triac phase control circuits, half-wave SCR triggering application and as voltage level detectors.

m0325

Abstract: M-0325 MD3250 MD3250F MD3251 MD3251F MQ3251 MQ3261
Contextual Info: MD3250, A, F, AF SILICON MD3251, A, F, AF MQ3251 MULTIPLE SILICON ANNULAR TRANSISTORS PNP SILICON MULTIPLE TRANSISTORS . . . designed for use as differential amplifiers, dual general-purpose amplifiers, front end detectors and temperature compensation applications.

MD918

Abstract: MD918A K 1170 MD918F MD918B MD918BF
Contextual Info: MD918, A, B silicon MD918F, AF, BF NPN SILICON MULTIPLE SILICON ANNULAR TRANSISTORS MULTIPLE TRANSISTORS . . . designed fo r use as d ifferential amplifiers, dual high frequency amplifiers, fro n t end detectors and temperature compensation applications.

IR photodiode

Abstract: PSS1705 silicon photodiode
Contextual Info: DATA SHEET PSS1705 SILICON PHOTODIODE TYPE PSS1705 PSS1705 is a PIN Silicon PHOTODIODE with an Active Area 0.88 mm2. It combines excellent blue light sensitivity with more than average Near IR response. This product is packaged in a ceramic case with a plastic lens. Pacific Silicon Sensor Inc. can also fabricate Silicon Detectors to your

MQ3799A

Abstract: MQ3798 MQ3799 4PD4
Contextual Info: MQ3798 silicon MQ3799 MQ3799A PNP SILICON ANNULAR PNP SILICON M ULTIPLE TRANSISTORS M ULTIPLE TRANSISTORS . . . designed for use in high-gain, low noise amplifiers; front end detectors and temperature compensation applications. Low Collector-Emitter Saturation Voltage —

MD708B

Abstract: VE-16V MD708 MD708A MD708AF MD708BF MD708F
Contextual Info: MD708, F silicon MD708A, AF MD708B, BF NPN SILICON ANNULAR MULTIPLE: TRANSISTORS . . . designed for use as differential amplifiers, dual high-speed switches, front end detectors and temperature com pensation ap­ plications. • NPN SILICON MULTIPLE TRANSISTORS

Contextual Info: SILICON SENSORS INC TS 5 F J Û H S 3 T 2 S □□□□3bb h NPN SILICON PHOTO DETECTOR Silicon Sensors SPT 15 is a high sensitivity N P N Planar Silicon Photo Transistor expressly designed for convenient application in th e tap e and card leaders, ch aracter recognition, industrial inspec­

MW front END

Abstract: MD3250 MD3250F MD3251 MD3251F MQ3251
Contextual Info: MD3250, A, F, AF SILICON MD3251, A, F, AF MQ3251 M ULTIPLE SILICON AN N U LA R TRANSISTORS PNP SILICON M ULTIPLE TRANSISTORS . . . designed for use as differential amplifiers, dual general-purpose amplifiers, front end detectors and temperature compensation

MD218

Abstract: MD2219 MD2218 WE VQE 11 E MD2218A MD2218AF MD2218F MD2219A MD2219AF MD2219F
Contextual Info: MD2218, MD2218A SILICON MD2218F, MD2218AF MD2219, MD2219A MD2219F, MD2219AF MQ2218,A,MQ2219,A MULTIPLE SILICON ANNULAR TRANSISTORS NPN SILICON MULTIPLE TRANSISTORS . . . designed for use as differential am plifiers, dual general-purpose am plifiers, front end detectors and temperature compensation ap­

PSS15-7-P

Abstract: PIN photodiode 500 nm
Contextual Info: DATA SHEET PSS15-7-P LARGE AREA SILICON PHOTODIODE PSS15-7-P PSS15-7-P is a PIN Silicon PHOTODIODE with an Active Area 15 mm2. It combines excellent blue light sensitivity with more than average Near IR response. This product is packaged on PCB board without a window. Pacific Silicon Sensor Inc. can also fabricate Silicon Detectors to your

MD7000

Abstract: 335 j chip die npn transistor 46bsc
Contextual Info: MD7000 SILICON MULTIPLE SILICON ANNULAR TRANSISTOR NPN SILICON MULTIPLE TRANSISTOR . . . designed fo r use as differential amplifiers, dual general-purpose amplifiers, fro n t end detectors and tem perature compensation appli­ cations. • Low Collector-E m itter Saturation Voltage —

CDB7619-000

Abstract: CDE7618-000 Silicon Detector Diodes
Contextual Info: EBA lpha Silicon Schottky Barrier Detector Diodes Features Both P-Type and N-Type Low Barrier Silicon Available Low 1/f Noise Bonded Junctions for Reliability Planar Passivated Beam-Lead and Chip Construction See Also Zero Bias Silicon Schottky Barrier Detector Diodes

71608 detectors

Abstract: 71891 Oriel 71891 71608 77058 Oriel Instruments 71894
Contextual Info: SILICON DETECTORS Light Sources 0.4 UV-ENHANCED SILICON 0.2 VIS-IR SILICON 0.0 200 400 600 800 1000 1200 Photolithography TYPICAL RESPONSIVITY A/W 0.6 READOUT ELECTRONICS You will find many of these detectors on other pages of this catalog where they are matched with readout

MD986

Abstract: MD986F MD966 508 die 610-A03
Contextual Info: MD9 8 6 silicon MD9 8 6 F NPN/PNP SILICON M ULTIPLE TRANSISTORS M ULTIPLE SILICON ANNULAR TRANSISTORS . . . designed for use as switches, dual general-purpose amplifiers, front end detectors and in temperature compensation applications. • Low Collector-Emitter Saturation Voltage -V cE(sat) ~ 0.3 Vdc (Max) @ I q = 10mAdc

SS-3002

Abstract: SS300-2 SS3002 silicon diode load SILICON SENSORS Silicon Sensors, Inc
Contextual Info: 8253922 SILICON SENSORS INC SILICON SENSORS INC — i m ISII lisi ^ 75C 003^0 D7W/- dF 00D034Q 0 | ö 2S3T22 SILICON SENSORS, INC. Highw ay 1 8 East D odgeville, Wisconsin 5 3 5 3 3 Telephone: 6 0 8 9 3 5 -2 7 0 7 8253922 SILICON SENSORS INC SILICON SENSORS INC

C30902S

Abstract: C30902E geiger PerkinElmer Avalanche Photodiode geiger counter C30921E avalanche photodiode c30902e PerkinElmer trigger avalanche photodiode bias C30921S
Contextual Info: Description Silicon Avalanche Photodiodes PerkinElmer Type C30902E avalanche C30902E, C30902S, C30921E, C30921S EVERYTHING High Speed Solid State Detectors for Fiber Optic and Very Low Light-Level Applications IN A photodiode utilizes a silicon detector chip

MD982

Abstract: MD982F MQ982
Contextual Info: MD982 SILICON MD982F MQ982 M ULTIPLE SILICO N ANNULAR TRANSISTORS PNP SILICON M ULTIPLE TRANSISTORS . . . designed for use as differential am plifiers, dual general-purpose am plifiers, front end detectors, and temperature compensation applications. •