SILICON CARBIDE JFET Search Results

SJDP120R085

Abstract: SEMISOUTH sjdp120 SJDP silicon carbide JFET JFET semisouth JFET semisouth Semisouth, SJDP120R085 silicon carbide j-fet silicon carbide sjdp120r
Contextual Info: Silicon Carbide PRELIMINARY SJDP120R085 Product Summary Normally-On Trench Silicon Carbide Power JFET BVDS RDS ON max ETS,typ Features: - Positive Temperature Coefficient for Ease of Paralleling - Extremely Fast Switching with No "Tail" Current at 150 °C

Contextual Info: PRELIMINARY PRODUCT BRIEF Subject to change LX1780 SiC Enhancement Mode Silicon Carbide JFET and Bipolar Transistors Driver DESCRIPTION The LX1780 is an extremely fast-switching Gate driver IC for driving normally-off silicon carbide JFET switches. It replaces

SJEP170R550

Abstract: SEMISOUTH 3E05 silicon carbide JFET JFET semisouth silicon carbide j-fet SJEP170 SJEP170R550 datasheet high voltage smps SJEP
Contextual Info: Silicon Carbide PRELIMINARY SJEP170R550 Product Summary Normally-OFF Trench Silicon Carbide Power JFET BVDS RDS ON max ETS,typ Features: - Compatible with Standard Gate Driver ICs - Positive Temperature Coefficient for Ease of Paralleling - Temperature Independent Switching Behavior

SJEP120R063

Abstract: SEMISOUTH sjep120r063 SEMISOUTH JFET semisouth silicon carbide JFET silicon carbide j-fet silicon carbide SJEP SJEP120 sjep120r0
Contextual Info: Silicon Carbide PRELIMINARY SJEP120R063 Product Summary Normally-OFF Trench Silicon Carbide Power JFET BVDS RDS ON max ETS,typ Features: - Compatible with Standard Gate Driver ICs - Positive Temperature Coefficient for Ease of Paralleling - Temperature Independent Switching Behavior

SJEP120R100

Abstract: SEMISOUTH silicon carbide JFET SJEP120 JFET semisouth silicon carbide j-fet SJEP semisouth sjEp120R100 induction heating schematic semisouth JFET
Contextual Info: Silicon Carbide PRELIMINARY SJEP120R100 Product Summary Normally-OFF Trench Silicon Carbide Power JFET BVDS RDS ON max ETS,typ Features: - Compatible with Standard Gate Driver ICs - Positive Temperature Coefficient for Ease of Paralleling - Extremely Fast Switching with No "Tail" Current at 150 °C

SJEP120R100

Abstract: SEMISOUTH silicon carbide JFET semisouth sjEp120R100 SGD600P1 SGDR600P1 silicon carbide JFET semisouth
Contextual Info: Silicon Carbide PRELIMINARY SJEP120R100 Product Summary Normally-OFF Trench Silicon Carbide Power JFET BVDS RDS ON max ETS,typ Features: - Compatible with Standard Gate Driver ICs - Positive Temperature Coefficient for Ease of Paralleling - Extremely Fast Switching with No "Tail" Current at 150 °C

SJEP120R100A

Abstract: JFET semisouth SEMISOUTH SGDR300P1 silicon carbide JFET SGD300P1 silicon carbide j-fet SJEP120R100 silicon carbide SemiSouth Laboratories
Contextual Info: Silicon Carbide PRELIMINARY SJEP120R100A Product Summary Normally-OFF Trench Silicon Carbide Power JFET BVDS RDS ON max ETS,typ Features: - Compatible with Standard Gate Driver ICs - Positive Temperature Coefficient for Ease of Paralleling - Extremely Fast Switching with No "Tail" Current at 150 °C

Contextual Info: SiC - JF ET Silicon Carbide- Junction Field Effect Transistor Cool Si C 1200 V CoolSiC™ Power Transistor IJW120R100T1 Final Da ta sheet Rev. 2.0, <2013-09-11> Po wer Ma nage m ent & M ulti m ark et 1200 V Silicon Carbide JFET IJW120R100T1 Description

IJW120R070T1

Abstract: IJW120R silicon carbide
Contextual Info: SiC - JF ET Silicon Carbide- Junction Field Effect Transistor Cool Si C 1200 V CoolSiC™ Power Transistor IJW120R070T1 Final Da ta sheet Rev. 2.0, <2013-09-11> Po wer Ma nage m ent & M ulti m ark et 1200 V Silicon Carbide JFET IJW120R070T1 Description

SJEP120R125

Abstract: SiC-JFET AN-SS1 sjep120r063 SiC JFET SEMISOUTH SEMISOUTH sjep120r125 silicon carbide JFET SiC BJT SJEP120
Contextual Info: Application Note AN-SS1 Silicon Carbide Enhancement-Mode Junction Field Effect Transistor and Recommendations for Use Table of Contents 1. 2. 3. 4. 5. Page Device Overview . 2

silicon carbide JFET

Abstract: POWER JFET silicon carbide j-fet silicon carbide
Contextual Info: NORMALLY-OFF SILICON CARBIDE POWER JFET SML100M12MSF • RDS on max of 0.100Ω • High Temperature Operation Tj = 200°C • Low Gate Charge and Intrinsic Capacitance • Positive Temperature Coefficient and Temperature Independent Switching Behaviour APPLICATIONS

silicon carbide JFET

Abstract: 13AVGS SML100M12MSF silicon carbide j-fet LE17 2-58A
Contextual Info: NORMALLY-OFF SILICON CARBIDE POWER JFET SML100M12MSF • RDS on max of 0.150Ω • High Temperature Operation Tj = 200°C • Low Gate Charge and Intrinsic Capacitance • Positive Temperature Coefficient and Temperature Independent Switching Behaviour APPLICATIONS

Contextual Info: New Power Semiconductor Module Combines MNPC Topology with SiC Switches Kuno Straub, Product Marketing Manager, Vincotech GmbH This article compares and contrasts two types of modules, one with silicon switches and the other with SiC silicon carbide switches. Vincotech flowMNPC 0 modules in 12mm

ASJD1200R045

Abstract: SiC JFET JFET semisouth silicon carbide JFET SJDP120R045 silicon carbide j-fet SEMISOUTH semisouth JFET VGS15V TO258
Contextual Info: ADVANCE INFORMATION SiC JFET ASJD1200R045 Normally-ON Trench Silicon Carbide Power JFET BVDS FEATURES: ProductSummary 1200 RDS ON max 0.045 V : ETS,typ TBD J Die Inside • Hermetic TO-258 Packaging • 200°C Maximum Operating Temperature (260oC Contact Factory)

Contextual Info: SILICON CARBIDE “SUPER” JUNCTION TRANSISTORS OPERATING AT 500 °C Siddarth Sundaresan1, Ranbir Singh1, R. Wayne Johnson2 1 GeneSiC Semiconductor Inc. Dulles, VA 20166 2 Auburn University, Auburn, AL 36849 email:siddarth.sundaresan@genesicsemi.com, phone: 703 996-8200

SEMISOUTH

Abstract: 1200v 30A to247 JFETs SiC jfets downhole ASJD1200R045
Contextual Info: ADVANCED INFORMATION Silicon Carbide SiC Schottky Diodes and JFETs Die Inside Why SiC for your Military, Aerospace SiC JFETs • 1200V & 1700V Breakdown Voltages and Down-hole Applications? • Extreme Performance • Operation Beyond Mil Temp - Elevated Temp Range (TJ), -55oC to +200oC

ASJD1200R085

Abstract: SiC JFET SJDP120R085 JFET semisouth SEMISOUTH silicon carbide j-fet SJDP silicon carbide JFET JFET semisouth Semisouth, SJDP120R085
Contextual Info: ADVANCE INFORMATION SiC JFET ASJD1200R085 Normally-ON Trench Silicon Carbide Power JFET BVDS FEATURES: ProductSummary 1200 RDS ON max 0.085 V : ETS,typ TBD J Die Inside • Hermetic TO-258 Packaging • 200°C Maximum Operating Temperature (260oC Contact Factory)

SEMISOUTH

Abstract: JFET semisouth SiC JFET semisouth JFET SJDP120R085
Contextual Info: ADVANCED INFORMATION SiC JFET ASJD1200R085 Normally-ON Trench Silicon Carbide Power JFET BVDS FEATURES: ProductSummary 1200 RDS ON max 0.085 V : ETS,typ TBD J Die Inside • Hermetic TO-257 Packaging • 200°C Maximum Operating Temperature (260oC Contact Factory)

ASJE1700R550

Abstract: SiC JFET JFET semisouth 3E05 SEMISOUTH silicon carbide j-fet silicon carbide JFET SJEP170 SJEP170R550 SJEP
Contextual Info: ADVANCE INFORMATION SiC JFET ASJE1700R550 Normally-OFF Trench Silicon Carbide Power JFET BVDS FEATURES: RDS ON max 0.550 V : ETS,typ 74 J Die Inside • Hermetic TO-258 Packaging • 200°C Maximum Operating Temperature (for 260oC Contact Factory) • Available Screening:

ASJE1200R063

Abstract: SiC JFET JFET semisouth SJEP120 SJEP120R063 SEMISOUTH silicon carbide JFET sjep120r0
Contextual Info: ADVANCE INFORMATION SiC JFET ASJE1200R063 Normally-OFF Trench Silicon Carbide Power JFET BVDS FEATURES: Die Inside RDS ON max 0.063 V : ETS,typ 440 J • Hermetic TO-258 Packaging • 200°C Maximum Operating Temperature (for 260oC Contact Factory) • Available Screening:

SJEP170R550

Abstract: semisouth JFET 3E05 SEMISOUTH JFET semisouth ASJE1700R550
Contextual Info: ADVANCED INFORMATION SiC JFET ASJE1700R550 Normally-OFF Trench Silicon Carbide Power JFET BVDS FEATURES: RDS ON max 0.550 V : ETS,typ 74 J Die Inside • Hermetic TO-257 Packaging • 200°C Maximum Operating Temperature (for 260oC Contact Factory) • Available Screening:

JFET semisouth

Abstract: SiC JFET SJEP120R063 SEMISOUTH sjep120r0
Contextual Info: ADVANCED INFORMATION SiC JFET ASJE1200R063 Normally-OFF Trench Silicon Carbide Power JFET BVDS FEATURES: Die Inside RDS ON max 0.063 V : ETS,typ 440 J • Hermetic TO-257 Packaging • 200°C Maximum Operating Temperature (for 260oC Contact Factory) • Available Screening:

ASJE1200R100

Abstract: SiC JFET JFET semisouth semisouth sjEp120R100 SEMISOUTH SJEP120R100 SJEP120 silicon carbide JFET
Contextual Info: ADVANCE INFORMATION SiC JFET ASJE1200R100 Normally-OFF Trench Silicon Carbide Power JFET BVDS FEATURES: RDS ON max 0.100 V : ETS,typ 170 J Die Inside • Hermetic TO-258 Packaging • 200°C Maximum Operating Temperature (for 260oC Contact Factory) • Available Screening:

JFET semisouth

Abstract: SEMISOUTH SiC JFET
Contextual Info: ADVANCED INFORMATION SiC JFET ASJE1200R100 Normally-OFF Trench Silicon Carbide Power JFET BVDS FEATURES: RDS ON max 0.100 V : ETS,typ 170 J Die Inside • Hermetic TO-257 Packaging • 200°C Maximum Operating Temperature (for 260oC Contact Factory) • Available Screening: