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SML100M12MSF Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
silicon carbide JFET Abstract: 13AVGS SML100M12MSF silicon carbide j-fet LE17 2-58A Contextual Info: NORMALLY-OFF SILICON CARBIDE POWER JFET SML100M12MSF • RDS on max of 0.150Ω • High Temperature Operation Tj = 200°C • Low Gate Charge and Intrinsic Capacitance • Positive Temperature Coefficient and Temperature Independent Switching Behaviour APPLICATIONS	Original	sml100m12msf 300us o-258aa silicon carbide jfet +413avgs silicon carbide j-fet le17 2-58a	PDF
silicon carbide JFET Abstract: POWER JFET silicon carbide j-fet silicon carbide Contextual Info: NORMALLY-OFF SILICON CARBIDE POWER JFET SML100M12MSF • RDS on max of 0.100Ω • High Temperature Operation Tj = 200°C • Low Gate Charge and Intrinsic Capacitance • Positive Temperature Coefficient and Temperature Independent Switching Behaviour APPLICATIONS	Original	sml100m12msf 300us o-258aa silicon carbide jfet +3power jfet silicon carbide j-fet silicon carbide	PDF

Catalog Datasheet

Type

Document Tags

PDF

silicon carbide JFET

Abstract: 13AVGS SML100M12MSF silicon carbide j-fet LE17 2-58A
Contextual Info: NORMALLY-OFF SILICON CARBIDE POWER JFET SML100M12MSF • RDS on max of 0.150Ω • High Temperature Operation Tj = 200°C • Low Gate Charge and Intrinsic Capacitance • Positive Temperature Coefficient and Temperature Independent Switching Behaviour APPLICATIONS

Original

sml100m12msf 300us o-258aa silicon carbide jfet +4

PDF

silicon carbide JFET

Abstract: POWER JFET silicon carbide j-fet silicon carbide
Contextual Info: NORMALLY-OFF SILICON CARBIDE POWER JFET SML100M12MSF • RDS on max of 0.100Ω • High Temperature Operation Tj = 200°C • Low Gate Charge and Intrinsic Capacitance • Positive Temperature Coefficient and Temperature Independent Switching Behaviour APPLICATIONS

Original

sml100m12msf 300us o-258aa silicon carbide jfet +3

PDF