SIHFZ Search Results

IRFZ48 mosfet driver

Contextual Info: IRFZ48RS, IRFZ48RL, SiHFZ48RS, SiHFZ48RL Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Advanced Process Technology • Dynamic dV/dt • 175 °C Operating Temperature • Fast Switching

Contextual Info: IRFZ44S_RC, IRFZ44L_RC, SiHFZ44S_RC, SiHFZ44LL_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter

Contextual Info: IRFZ34, SiHFZ34 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) (Ω) VGS = 10 V RoHS* Qg (Max.) (nC) 46 • Fast Switching Qgs (nC) 11 • Ease of Paralleling 22 • Simple Drive Requirements Qgd (nC) Configuration

Contextual Info: IRFZ48R_RC, SiHFZ48R_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,

Contextual Info: IRFZ48, SiHFZ48 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 60 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 0.018 110 Qgs (nC) 29 Qgd (nC) 36 Configuration Single Dynamic dV/dt Rating Repetitive Avalanche Rated

Contextual Info: IRFZ48R, SiHFZ48R Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • Advanced Process Technology Available Ultra Low On-Resistance RoHS* Dynamic dV/dt Rating COMPLIANT 175 °C Operating Temperature Fast Switching Fully Avalanche Rated

Contextual Info: SiHFZ34S_RC, SiHFZ34L_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,

n 332 ab

Contextual Info: IRFZ10, SiHFZ10 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • 60 RDS(on) () VGS = 10 V Qg (Max.) (nC) 0.20 11 Qgs (nC) 3.1 Qgd (nC) 5.8 Configuration Single COMPLIANT Third Generation Power MOSFETs from Vishay provides the

Contextual Info: IRFZ24S-L_RC, SiHFZ24S-L_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter

Contextual Info: IRFZ14_RC, SiHFZ14_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,

IRFZ44L

Abstract: IRFZ44S SiHFZ44L SiHFZ44S IRFZ44 data
Contextual Info: IRFZ44S, IRFZ44L, SiHFZ44S, SiHFZ44L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Advanced Process Technology • Surface Mount (IRFZ44S, SiHFZ44S) • Low-Profile Through-Hole (IRFZ44L, SiHFZ44L)

Contextual Info: IRFZ44R, SiHFZ44R Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 60 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 0.028 67 Qgs (nC) 18 Qgd (nC) 25 Configuration Single D TO-220AB G G D S S N-Channel MOSFET • • • • • • • Advanced Process Technology

IRFZ48RL

Abstract: SiHFZ48RL
Contextual Info: IRFZ48RS, IRFZ48RL, SiHFZ48RS, SiHFZ48RL Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Advanced Process Technology • Dynamic dV/dt • 175 °C Operating Temperature • Fast Switching

Contextual Info: IRFZ48R, SiHFZ48R Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • Advanced Process Technology Available Ultra Low On-Resistance RoHS* Dynamic dV/dt Rating COMPLIANT 175 °C Operating Temperature Fast Switching Fully Avalanche Rated

IRFZ48

Abstract: IRFZ48L IRFZ48S IRFZ48STRL SiHFZ48 SiHFZ48L-E3 SiHFZ48S SiHFZ48S-E3 SiHFZ48STL
Contextual Info: IRFZ48S, IRFZ48L, SiHFZ48S, SiHFZ48L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Qg Max. (nC) 110 Qgs (nC) 29 • • • • • • Qgd (nC) 36 DESCRIPTION VDS (V) 60 RDS(on) (Ω) VGS = 10 V Configuration 0.018 Single D G G D S Available RoHS*

IRFZ14L

Abstract: IRFZ14S SiHFZ44L IRFZ14STRL SiHFZ14L SiHFZ14L-E3 SiHFZ14S SiHFZ14S-E3 SiHFZ14STL
Contextual Info: IRFZ14S, IRFZ14L, SiHFZ14S, SiHFZ14L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 60 RDS(on) (Ω) VGS = 10 V 0.20 Qg (Max.) (nC) 11 Qgs (nC) 3.1 Qgd (nC) 5.8 Configuration Single D2PAK (TO-263) G G D S Advanced Process Technology Surface Mount (IRFZ14S, SiHFZ14S)

gate drive for mosfet irfz44

Abstract: IRFZ44 IRFZ44 equivalent IRFZ44 DATASHEET IRFZ44 mosfet IRFZ44 data IRFZ44 mosfet switching circuit application irfz44 IRFZ44PBF IRFZ44 parallel
Contextual Info: IRFZ44, SiHFZ44 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) (Ω) VGS = 10 V RoHS* Qg (Max.) (nC) 67 • Fast Switching Qgs (nC) 18 • Ease of Paralleling 25 • Simple Drive Requirements Qgd (nC) Configuration

IRFZ34 Datasheet

Abstract: irfz34 SiHFZ34 SiHFZ34-E3 irfz34 mosfets
Contextual Info: IRFZ34, SiHFZ34 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 46 • Fast Switching Qgs (nC) 11 • Ease of Paralleling 22 • Simple Drive Requirements Qgd (nC) Configuration

IRFZ44 mosfet

Abstract: IRFZ44 equivalent IRFZ44L IRFZ44S SiHFZ44L SiHFZ44L-E3 SiHFZ44S SiHFZ44S-E3 IRFZ44 TO-263
Contextual Info: IRFZ44S, IRFZ44L, SiHFZ44S, SiHFZ44L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • 60 RDS(on) (Ω) VGS = 10 V 0.028 Qg (Max.) (nC) 67 Qgs (nC) 18 Qgd (nC) 25 Configuration Single COMPLIANT Third generation Power MOSFETs from Vishay utilize

IRFZ48RL

Abstract: IRFZ48RSPBF IRFZ48RS SiHFZ48RL-E3 SiHFZ48RS SiHFZ48RS-E3 SiHFZ48RL
Contextual Info: IRFZ48RS, IRFZ48RL, SiHFZ48RS, SiHFZ48RL Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Advanced Process Technology 60 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 110 Qgs (nC) 29 Qgd (nC) 36 Configuration COMPLIANT • Fast Switching • Fully Avalanche Rated

IRFZ14PBF

Abstract: IRFZ14 SiHFZ14 SiHFZ14-E3
Contextual Info: IRFZ14, SiHFZ14 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) (Ω) VGS = 10 V RoHS* Qg (Max.) (nC) 11 • Fast Switching Qgs (nC) 3.1 • Ease of Paralleling 5.8 • Simple Drive Requirements Qgd (nC) Configuration

Contextual Info: IRFZ10, SiHFZ10 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • 60 RDS(on) () VGS = 10 V Qg (Max.) (nC) 0.20 11 Qgs (nC) 3.1 Qgd (nC) 5.8 Configuration Single COMPLIANT Third Generation Power MOSFETs from Vishay provides the

Contextual Info: IRFZ24S, IRFZ24L, SiHFZ24S, SiHFZ24S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Advanced Process Technology VDS V 60 RDS(on) (Ω) • Surface Mount (IRFZ24S/SiHFZ24S) VGS = 10 V 0.10 Qg (Max.) (nC) 25 Qgs (nC) 5.8 Qgd (nC) 11 Configuration

Contextual Info: IRFZ48S, IRFZ48L, SiHFZ48S, SiHFZ48L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration • Halogen-free According to IEC 61249-2-21 Definition • Advanced Process Technology • Surface Mount (IRFZ48S, SiHFZ48S)