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    SIHD Search Results

    SIHD Datasheets (39)

    Vishay Siliconix
    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    SIHD11N80AE-GE3
    Vishay Siliconix MOSFET N-CH 800V 8A TO252AA Original PDF 201.73KB 10
    SIHD11N80AE-T1-GE3
    Vishay Siliconix N-CHANNEL 800V Original PDF 201.73KB 10
    SIHD11N80AE-T4-GE3
    Vishay Siliconix N-CHANNEL 800V Original PDF 201.73KB 10
    SIHD12N50E-GE3
    Vishay Siliconix Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CHAN 500V DPAK Original PDF 194.63KB
    SIHD14N60E-BE3
    Vishay Siliconix MOSFET N-CH 600V 13A TO252AA Original PDF 134.4KB 7
    SIHD14N60E-GE3
    Vishay Siliconix Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CHANNEL 600V 13A DPAK Original PDF 136.23KB
    SIHD14N60ET1-GE3
    Vishay Siliconix N-CHANNEL 600V Original PDF 134.4KB 7
    SIHD14N60ET4-GE3
    Vishay Siliconix N-CHANNEL 600V Original PDF 134.4KB 7
    SIHD14N60ET5-GE3
    Vishay Siliconix N-CHANNEL 600V Original PDF 134.4KB 7
    SIHD180N60E-GE3
    Vishay Siliconix Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET E SERIES 600V DPAK (TO-25 Original PDF 142.14KB
    SIHD186N60EF-GE3
    Vishay Siliconix MOSFET N-CH 600V 19A DPAK Original PDF 200.7KB
    SIHD1K4N60E-GE3
    Vishay Siliconix Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH DPAK TO-252 Original PDF 142.38KB
    SIHD240N60E-GE3
    Vishay Siliconix Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CHAN 600V DPAK TO-252 Original PDF 135.29KB
    SIHD2N80AE-GE3
    Vishay Siliconix MOSFET N-CH 800V 2.9A DPAK Original PDF 200.17KB
    SIHD2N80E-GE3
    Vishay Siliconix Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 800V 2.8A DPAK Original PDF 117.39KB
    SIHD3N50D-BE3
    Vishay Siliconix MOSFET N-CH 500V 3A DPAK Original PDF 191.53KB 9
    SIHD3N50D-E3
    Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 500V 3A TO252 DPAK Original PDF 9
    SIHD3N50D-GE3
    Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 500V 3A TO252 DPAK Original PDF 9
    SIHD3N50DT1-GE3
    Vishay Siliconix MOSFET N-CH 500V 3A DPAK Original PDF 191.53KB
    SIHD3N50DT4-GE3
    Vishay Siliconix MOSFET N-CH 500V 3A DPAK Original PDF 191.53KB
    SF Impression Pixel

    SIHD Price and Stock

    Vishay Intertechnologies

    Vishay Intertechnologies SIHD14N60E-GE3

    Transistor: N-MOSFET; unipolar; 600V; 8A; Idm: 32A; 147W; DPAK,TO252
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TME SIHD14N60E-GE3 351 1
    • 1 $2.79
    • 10 $1.84
    • 100 $1.62
    • 1000 $1.62
    • 10000 $1.62
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    Verical () SIHD14N60E-GE3 3,025 7
    • 1 -
    • 10 $3.08
    • 100 $3.08
    • 1000 $3.08
    • 10000 $3.08
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    SIHD14N60E-GE3 351 31
    • 1 -
    • 10 -
    • 100 $1.99
    • 1000 $1.99
    • 10000 $1.99
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    SIHD14N60E-GE3 22 2
    • 1 -
    • 10 $1.06
    • 100 $1.06
    • 1000 $1.06
    • 10000 $1.06
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    Mouser Electronics SIHD14N60E-GE3 11,301
    • 1 $3.24
    • 10 $1.52
    • 100 $1.38
    • 1000 $1.17
    • 10000 $1.15
    Buy Now
    Arrow Electronics () SIHD14N60E-GE3 3,025 31 Weeks 1
    • 1 $3.08
    • 10 $3.08
    • 100 $3.08
    • 1000 $3.08
    • 10000 $3.08
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    SIHD14N60E-GE3 Cut Strips 22 1
    • 1 $2.74
    • 10 $2.74
    • 100 $2.74
    • 1000 $2.74
    • 10000 $2.74
    Buy Now
    Newark () SIHD14N60E-GE3 Cut Tape 1,386 1
    • 1 $3.24
    • 10 $3.24
    • 100 $1.38
    • 1000 $1.14
    • 10000 $1.06
    Buy Now
    SIHD14N60E-GE3 Tape & Reel 1,386 100
    • 1 -
    • 10 -
    • 100 $1.38
    • 1000 $1.14
    • 10000 $1.06
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    EBV Elektronik SIHD14N60E-GE3 825 39 Weeks 75
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    Vishay Intertechnologies SIHD3N50D-GE3

    Transistor: N-MOSFET; unipolar; 500V; 1.9A; Idm: 5.5A; 69W
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TME SIHD3N50D-GE3 1
    • 1 $0.98
    • 10 $0.66
    • 100 $0.46
    • 1000 $0.40
    • 10000 $0.40
    Get Quote

    Vishay Intertechnologies SIHD5N80AE-GE3

    Transistor: N-MOSFET; unipolar; 850V; 4.4A; 62.5W; DPAK,TO252
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TME SIHD5N80AE-GE3 3,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.50
    Get Quote
    Avnet Americas SIHD5N80AE-GE3 Tape & Reel 31 Weeks 3,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.43
    Buy Now
    Mouser Electronics SIHD5N80AE-GE3 3,847
    • 1 $1.74
    • 10 $0.82
    • 100 $0.73
    • 1000 $0.55
    • 10000 $0.47
    Buy Now
    Newark SIHD5N80AE-GE3 Cut Tape 2,149 1
    • 1 $1.92
    • 10 $1.92
    • 100 $0.91
    • 1000 $0.72
    • 10000 $0.66
    Buy Now
    TTI SIHD5N80AE-GE3 Reel 3,000 3,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.47
    Buy Now
    Avnet Asia SIHD5N80AE-GE3 33 Weeks 3,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    Get Quote
    EBV Elektronik SIHD5N80AE-GE3 39 Weeks 75
    • 1 -
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    • 1000 -
    • 10000 -
    Get Quote

    Vishay Intertechnologies SIHD6N80E-GE3

    Transistor: N-MOSFET; unipolar; 800V; 3.4A; Idm: 15A; 78W
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TME SIHD6N80E-GE3 1
    • 1 $2.28
    • 10 $1.55
    • 100 $1.31
    • 1000 $1.29
    • 10000 $1.29
    Get Quote
    Avnet Americas SIHD6N80E-GE3 Tape & Reel 3,000 31 Weeks 3,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.85
    Buy Now
    Mouser Electronics SIHD6N80E-GE3 1,192
    • 1 $3.06
    • 10 $1.52
    • 100 $1.37
    • 1000 $1.06
    • 10000 $0.98
    Buy Now
    TTI SIHD6N80E-GE3 Reel 3,000 3,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.85
    Buy Now
    EBV Elektronik SIHD6N80E-GE3 39 Weeks 75
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    Get Quote

    Vishay Intertechnologies SIHD5N50D-GE3

    Transistor: N-MOSFET; unipolar; 500V; 3.4A; Idm: 10A; 104W
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TME SIHD5N50D-GE3 1
    • 1 $0.82
    • 10 $0.74
    • 100 $0.59
    • 1000 $0.55
    • 10000 $0.55
    Get Quote

    SIHD Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: SiHD7N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • • • • • • 650 RDS(on) max. at 25 °C () VGS = 10 V Qg max. (nC) 0.6 40 Qgs (nC) 5 Qgd (nC) 9 Configuration Single Low Figure-of-Merit (FOM) Ron x Qg


    Original
    sihd7n60e2002/95/ec2011/65/eujs709a+102-oct-12 PDF

    Contextual Info: SiHD6N62E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Low Figure-of-Merit (FOM) Ron x Qg 700 RDS(on) max. at 25 °C () VGS = 10 V Qg max. (nC) • • • • • 0.9 34 Qgs (nC) 4 Qgd (nC) 8 Configuration


    Original
    sihd6n62e2002/95/ec2011/65/eujs709a+102-oct-12 PDF

    Contextual Info: SiHD3N50DA_RC www.vishay.com Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter


    Original
    sihd3n50daan6098755u6698m+38998m7460m09-jan-14 PDF

    Contextual Info: SiHD12N50E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Low figure-of-merit (FOM) Ron x Qg 550 RDS(on) max. at 25 °C (Ω) VGS = 10 V Qg max. (nC) • • • • • 0.380 50 Qgs (nC) 6 Qgd (nC) 10


    Original
    sihd12n50eo-2522002/95/ec2011/65/eu+2js709a02-oct-12 PDF

    Contextual Info: SiHD6N65E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Low Figure-of-Merit (FOM) Ron x Qg 700 RDS(on) max. at 25 °C () VGS = 10 V Qg max. (nC) • • • • • 0.6 48 Qgs (nC) 6 Qgd (nC) 11 Configuration


    Original
    sihd6n65e2002/95/ec2011/65/eujs709a+102-oct-12 PDF

    Contextual Info: SiHD5N50D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Optimal Design - Low Area Specific On-Resistance - Low Input Capacitance (Ciss) - Reduced Capacitive Switching Losses - High Body Diode Ruggedness


    Original
    sihd5n50do-2522002/95/ec2011/65/eu+2js709a02-oct-12 PDF

    Contextual Info: SiHD_U3N50D_RC www.vishay.com Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter


    Original
    u3n50dan6096971m0262m+61677m8975m0909m3864m8367m3398m PDF

    Contextual Info: SiHD3N50DA www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Optimal design - Low area specific on-resistance - Low input capacitance (Ciss) - Reduced capacitive switching losses - High body diode ruggedness


    Original
    sihd3n50dao-2522002/95/ec2011/65/eu+2js709a02-oct-12 PDF

    Contextual Info: SiHD3N50D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Optimal Design - Low Area Specific On-Resistance - Low Input Capacitance (Ciss) - Reduced Capacitive Switching Losses - High Body Diode Ruggedness


    Original
    sihd3n50do-2522002/95/ec2011/65/eu+2js709a02-oct-12 PDF

    Contextual Info: SiHD12N50E_RC www.vishay.com Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter


    Original
    sihd12n50ean6092845u1569m+31891m8738m07-oct-14 PDF

    Contextual Info: SiHD6N62E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Low figure-of-merit (FOM) Ron x Qg 700 RDS(on) max. at 25 °C (Ω) VGS = 10 V Qg max. (nC) • • • • • 0.9 34 Qgs (nC) 4 Qgd (nC) 8 Configuration


    Original
    sihd6n62e2002/95/ec2011/65/eujs709a+102-oct-12 PDF

    Contextual Info: SiHD7N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • • • • • • 650 RDS(on) max. at 25 °C (Ω) VGS = 10 V Qg max. (nC) 0.6 40 Qgs (nC) 5 Qgd (nC) 9 Configuration Single Low figure-of-merit (FOM) Ron x Qg


    Original
    sihd7n60e2002/95/ec2011/65/eujs709a+102-oct-12 PDF

    Contextual Info: SiHD3N50D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Optimal Design - Low Area Specific On-Resistance - Low Input Capacitance (Ciss) - Reduced Capacitive Switching Losses - High Body Diode Ruggedness


    Original
    sihd3n50do-2522002/95/ec2011/65/eu+2js709a02-oct-12 PDF

    sihd3n50

    Abstract: SIHD3N50D-GE3
    Contextual Info: SiHD3N50D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Optimal Design - Low Area Specific On-Resistance - Low Input Capacitance (Ciss) 550 RDS(on) max. () at 25 °C VGS = 10 V 3.2 Qg (max.) (nC) 20


    Original
    sihd3n50do-2522011/65/eu2002/95/ec+312-mar-12sihd3n50sihd3n50d-ge3 PDF

    Contextual Info: SiHD7N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • • • • • • 650 RDS(on) max. at 25 °C () VGS = 10 V Qg max. (nC) 0.6 40 Qgs (nC) 5 Qgd (nC) 9 Configuration Single Low Figure-of-Merit (FOM) Ron x Qg


    Original
    sihd7n60e2002/95/ec2011/65/eujs709a+102-oct-12 PDF

    Piher International

    Abstract: B424G potentiometer Citec 100r MARKING CODE SMD S111 T72 marking Piher* trimmer
    Contextual Info: p, - a M E C C IT E C POTENTIOMETERS INDUCTORS, SIHDs SWITCHES, NETWORKS ENCODERS POWER COMPONENTS SMD Economy Trimmers TYP E 3150 SERIES vV ' This is the ultimate in light weight. low profile skeleton s.ni. poten­ tiometers ottered in a range ot two and three tennin.il packages, oitset


    OCR Scan
    708-390-6680/faxb4247ddpiher internationalb424g+4potentiometer citec 100rmarking code smd s111t72 markingpiher* trimmer PDF

    Contextual Info: SiHD6N62E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Low Figure-of-Merit (FOM) Ron x Qg 700 RDS(on) max. at 25 °C () VGS = 10 V Qg max. (nC) • • • • • 0.9 34 Qgs (nC) 4 Qgd (nC) 8 Configuration


    Original
    sihd6n62e2002/95/ec2011/65/eujs709a+102-oct-12 PDF

    Contextual Info: SiHD5N50D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Optimal Design - Low Area Specific On-Resistance - Low Input Capacitance (Ciss) 550 RDS(on) max. at 25 °C () VGS = 10 V 1.5 Qg (max.) (nC) 20


    Original
    sihd5n50do-2522011/65/eu2002/95/ec+112-mar-12 PDF

    Contextual Info: SiHD7N60E_RC www.vishay.com Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter


    Original
    sihd7n60ean6091903m8521m+65694m2659m5208m5417m9369m2244m PDF

    Contextual Info: SiHD6N65E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Low figure-of-merit (FOM) Ron x Qg 700 RDS(on) max. at 25 °C (Ω) VGS = 10 V Qg max. (nC) • • • • • 0.6 48 Qgs (nC) 6 Qgd (nC) 11 Configuration


    Original
    sihd6n65e2002/95/ec2011/65/eujs709a+102-oct-12 PDF

    SiHd7N60E

    Contextual Info: SiHD7N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • • • • • • 650 RDS(on) max. at 25 °C (Ω) VGS = 10 V 0.6 Qg max. (nC) 40 Qgs (nC) 5 Qgd (nC) 9 Configuration Single Low Figure-of-Merit (FOM) Ron x Qg


    Original
    sihd7n60eo-2522011/65/eu2002/95/ec+112-mar-12 PDF

    Contextual Info: SiHD3N50D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Optimal Design - Low Area Specific On-Resistance - Low Input Capacitance (Ciss) 550 RDS(on) max. () at 25 °C VGS = 10 V 3.2 Qg (max.) (nC) 20


    Original
    sihd3n50do-2522011/65/eu2002/95/ec+112-mar-12 PDF

    Contextual Info: SiHD6N62E_RC www.vishay.com Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter


    Original
    sihd6n62ean6095255m3372m+33280m6452m16-apr-13 PDF

    TO-247 FULLPAK Package

    Abstract: SIHG73N60 SiHF22N60 SIHG22N60E solar pv SIHG24N65 sihg47n60 SiHF7N60E
    Contextual Info: V I S H AY I N T E R T E C H N O L O G Y, I N C . MOSFETs - 30 % Reduction in Specific On-Resistance I INNOVAT AND TEC O L OGY E Series N HN HIGH-VOLTAGE POWER MOSFETs O 19 62-2012 600 V and 650 V High-Performance MOSFETs E Series 600 V and 650 V, Super Junction N-Channel Power MOSFETs with a 30 % Reduction


    Original
    enerto-247o-247o-220pak/to-263+9vmn-pt0273-1208to-247 fullpak packagesihg73n60sihf22n60sihg22n60esolar pvsihg24n65sihg47n60sihf7n60e PDF