SIHD Search Results
SIHD Datasheets (39)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| SIHD11N80AE-GE3 | Vishay Siliconix | MOSFET N-CH 800V 8A TO252AA | Original | 201.73KB | 10 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHD11N80AE-T1-GE3 | Vishay Siliconix | N-CHANNEL 800V | Original | 201.73KB | 10 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHD11N80AE-T4-GE3 | Vishay Siliconix | N-CHANNEL 800V | Original | 201.73KB | 10 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHD12N50E-GE3 | Vishay Siliconix | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CHAN 500V DPAK | Original | 194.63KB | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHD14N60E-BE3 | Vishay Siliconix | MOSFET N-CH 600V 13A TO252AA | Original | 134.4KB | 7 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHD14N60E-GE3 | Vishay Siliconix | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CHANNEL 600V 13A DPAK | Original | 136.23KB | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHD14N60ET1-GE3 | Vishay Siliconix | N-CHANNEL 600V | Original | 134.4KB | 7 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHD14N60ET4-GE3 | Vishay Siliconix | N-CHANNEL 600V | Original | 134.4KB | 7 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHD14N60ET5-GE3 | Vishay Siliconix | N-CHANNEL 600V | Original | 134.4KB | 7 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHD180N60E-GE3 | Vishay Siliconix | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET E SERIES 600V DPAK (TO-25 | Original | 142.14KB | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHD186N60EF-GE3 | Vishay Siliconix | MOSFET N-CH 600V 19A DPAK | Original | 200.7KB | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHD1K4N60E-GE3 | Vishay Siliconix | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH DPAK TO-252 | Original | 142.38KB | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHD240N60E-GE3 | Vishay Siliconix | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CHAN 600V DPAK TO-252 | Original | 135.29KB | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHD2N80AE-GE3 | Vishay Siliconix | MOSFET N-CH 800V 2.9A DPAK | Original | 200.17KB | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHD2N80E-GE3 | Vishay Siliconix | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 800V 2.8A DPAK | Original | 117.39KB | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHD3N50D-BE3 | Vishay Siliconix | MOSFET N-CH 500V 3A DPAK | Original | 191.53KB | 9 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHD3N50D-E3 | Vishay Siliconix | FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 500V 3A TO252 DPAK | Original | 9 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHD3N50D-GE3 | Vishay Siliconix | FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 500V 3A TO252 DPAK | Original | 9 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHD3N50DT1-GE3 | Vishay Siliconix | MOSFET N-CH 500V 3A DPAK | Original | 191.53KB | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHD3N50DT4-GE3 | Vishay Siliconix | MOSFET N-CH 500V 3A DPAK | Original | 191.53KB | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SIHD Price and Stock
Vishay Intertechnologies SIHD14N60E-GE3Transistor: N-MOSFET; unipolar; 600V; 8A; Idm: 32A; 147W; DPAK,TO252 |
|||||||||||
| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
|
SIHD14N60E-GE3 | 351 | 1 |
|
Buy Now | ||||||
|
SIHD14N60E-GE3 | 3,025 | 7 |
|
Buy Now | ||||||
| SIHD14N60E-GE3 | 351 | 31 |
|
Buy Now | |||||||
| SIHD14N60E-GE3 | 22 | 2 |
|
Buy Now | |||||||
|
SIHD14N60E-GE3 | 11,301 |
|
Buy Now | |||||||
|
SIHD14N60E-GE3 | 3,025 | 31 Weeks | 1 |
|
Buy Now | |||||
| SIHD14N60E-GE3 | Cut Strips | 22 | 1 |
|
Buy Now | ||||||
|
SIHD14N60E-GE3 | Cut Tape | 1,386 | 1 |
|
Buy Now | |||||
| SIHD14N60E-GE3 | Tape & Reel | 1,386 | 100 |
|
Buy Now | ||||||
|
SIHD14N60E-GE3 | 825 | 39 Weeks | 75 |
|
Buy Now | |||||
Vishay Intertechnologies SIHD3N50D-GE3Transistor: N-MOSFET; unipolar; 500V; 1.9A; Idm: 5.5A; 69W |
|||||||||||
| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
|
SIHD3N50D-GE3 | 1 |
|
Get Quote | |||||||
Vishay Intertechnologies SIHD5N80AE-GE3Transistor: N-MOSFET; unipolar; 850V; 4.4A; 62.5W; DPAK,TO252 |
|||||||||||
| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
|
SIHD5N80AE-GE3 | 3,000 |
|
Get Quote | |||||||
|
SIHD5N80AE-GE3 | Tape & Reel | 31 Weeks | 3,000 |
|
Buy Now | |||||
|
SIHD5N80AE-GE3 | 3,847 |
|
Buy Now | |||||||
|
SIHD5N80AE-GE3 | Cut Tape | 2,149 | 1 |
|
Buy Now | |||||
|
SIHD5N80AE-GE3 | Reel | 3,000 | 3,000 |
|
Buy Now | |||||
|
SIHD5N80AE-GE3 | 33 Weeks | 3,000 |
|
Get Quote | ||||||
|
SIHD5N80AE-GE3 | 39 Weeks | 75 |
|
Get Quote | ||||||
Vishay Intertechnologies SIHD6N80E-GE3Transistor: N-MOSFET; unipolar; 800V; 3.4A; Idm: 15A; 78W |
|||||||||||
| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
|
SIHD6N80E-GE3 | 1 |
|
Get Quote | |||||||
|
SIHD6N80E-GE3 | Tape & Reel | 3,000 | 31 Weeks | 3,000 |
|
Buy Now | ||||
|
SIHD6N80E-GE3 | 1,192 |
|
Buy Now | |||||||
|
SIHD6N80E-GE3 | Reel | 3,000 | 3,000 |
|
Buy Now | |||||
|
SIHD6N80E-GE3 | 39 Weeks | 75 |
|
Get Quote | ||||||
Vishay Intertechnologies SIHD5N50D-GE3Transistor: N-MOSFET; unipolar; 500V; 3.4A; Idm: 10A; 104W |
|||||||||||
| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
|
SIHD5N50D-GE3 | 1 |
|
Get Quote | |||||||
SIHD Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
|
Contextual Info: SiHD7N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • • • • • • 650 RDS(on) max. at 25 °C () VGS = 10 V Qg max. (nC) 0.6 40 Qgs (nC) 5 Qgd (nC) 9 Configuration Single Low Figure-of-Merit (FOM) Ron x Qg |
Original |
sihd7n60e2002/95/ec2011/65/eujs709a+1 | |
|
Contextual Info: SiHD6N62E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Low Figure-of-Merit (FOM) Ron x Qg 700 RDS(on) max. at 25 °C () VGS = 10 V Qg max. (nC) • • • • • 0.9 34 Qgs (nC) 4 Qgd (nC) 8 Configuration |
Original |
sihd6n62e2002/95/ec2011/65/eujs709a+1 | |
|
Contextual Info: SiHD3N50DA_RC www.vishay.com Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter |
Original |
sihd3n50daan6098755u6698m+3 | |
|
Contextual Info: SiHD12N50E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Low figure-of-merit (FOM) Ron x Qg 550 RDS(on) max. at 25 °C (Ω) VGS = 10 V Qg max. (nC) • • • • • 0.380 50 Qgs (nC) 6 Qgd (nC) 10 |
Original |
sihd12n50eo-2522002/95/ec2011/65/eu+2 | |
|
Contextual Info: SiHD6N65E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Low Figure-of-Merit (FOM) Ron x Qg 700 RDS(on) max. at 25 °C () VGS = 10 V Qg max. (nC) • • • • • 0.6 48 Qgs (nC) 6 Qgd (nC) 11 Configuration |
Original |
sihd6n65e2002/95/ec2011/65/eujs709a+1 | |
|
Contextual Info: SiHD5N50D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Optimal Design - Low Area Specific On-Resistance - Low Input Capacitance (Ciss) - Reduced Capacitive Switching Losses - High Body Diode Ruggedness |
Original |
sihd5n50do-2522002/95/ec2011/65/eu+2 | |
|
Contextual Info: SiHD_U3N50D_RC www.vishay.com Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter |
Original |
u3n50dan6096971m0262m+6 | |
|
Contextual Info: SiHD3N50DA www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Optimal design - Low area specific on-resistance - Low input capacitance (Ciss) - Reduced capacitive switching losses - High body diode ruggedness |
Original |
sihd3n50dao-2522002/95/ec2011/65/eu+2 | |
|
Contextual Info: SiHD3N50D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Optimal Design - Low Area Specific On-Resistance - Low Input Capacitance (Ciss) - Reduced Capacitive Switching Losses - High Body Diode Ruggedness |
Original |
sihd3n50do-2522002/95/ec2011/65/eu+2 | |
|
Contextual Info: SiHD12N50E_RC www.vishay.com Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter |
Original |
sihd12n50ean6092845u1569m+3 | |
|
Contextual Info: SiHD6N62E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Low figure-of-merit (FOM) Ron x Qg 700 RDS(on) max. at 25 °C (Ω) VGS = 10 V Qg max. (nC) • • • • • 0.9 34 Qgs (nC) 4 Qgd (nC) 8 Configuration |
Original |
sihd6n62e2002/95/ec2011/65/eujs709a+1 | |
|
Contextual Info: SiHD7N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • • • • • • 650 RDS(on) max. at 25 °C (Ω) VGS = 10 V Qg max. (nC) 0.6 40 Qgs (nC) 5 Qgd (nC) 9 Configuration Single Low figure-of-merit (FOM) Ron x Qg |
Original |
sihd7n60e2002/95/ec2011/65/eujs709a+1 | |
|
Contextual Info: SiHD3N50D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Optimal Design - Low Area Specific On-Resistance - Low Input Capacitance (Ciss) - Reduced Capacitive Switching Losses - High Body Diode Ruggedness |
Original |
sihd3n50do-2522002/95/ec2011/65/eu+2 | |
sihd3n50
Abstract: SIHD3N50D-GE3
|
Original |
sihd3n50do-2522011/65/eu2002/95/ec+3 | |
|
|
|||
|
Contextual Info: SiHD7N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • • • • • • 650 RDS(on) max. at 25 °C () VGS = 10 V Qg max. (nC) 0.6 40 Qgs (nC) 5 Qgd (nC) 9 Configuration Single Low Figure-of-Merit (FOM) Ron x Qg |
Original |
sihd7n60e2002/95/ec2011/65/eujs709a+1 | |
Piher International
Abstract: B424G potentiometer Citec 100r MARKING CODE SMD S111 T72 marking Piher* trimmer
|
OCR Scan |
708-390-6680/faxb4247ddpiher internationalb424g+4 | |
|
Contextual Info: SiHD6N62E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Low Figure-of-Merit (FOM) Ron x Qg 700 RDS(on) max. at 25 °C () VGS = 10 V Qg max. (nC) • • • • • 0.9 34 Qgs (nC) 4 Qgd (nC) 8 Configuration |
Original |
sihd6n62e2002/95/ec2011/65/eujs709a+1 | |
|
Contextual Info: SiHD5N50D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Optimal Design - Low Area Specific On-Resistance - Low Input Capacitance (Ciss) 550 RDS(on) max. at 25 °C () VGS = 10 V 1.5 Qg (max.) (nC) 20 |
Original |
sihd5n50do-2522011/65/eu2002/95/ec+1 | |
|
Contextual Info: SiHD7N60E_RC www.vishay.com Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter |
Original |
sihd7n60ean6091903m8521m+6 | |
|
Contextual Info: SiHD6N65E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Low figure-of-merit (FOM) Ron x Qg 700 RDS(on) max. at 25 °C (Ω) VGS = 10 V Qg max. (nC) • • • • • 0.6 48 Qgs (nC) 6 Qgd (nC) 11 Configuration |
Original |
sihd6n65e2002/95/ec2011/65/eujs709a+1 | |
SiHd7N60EContextual Info: SiHD7N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • • • • • • 650 RDS(on) max. at 25 °C (Ω) VGS = 10 V 0.6 Qg max. (nC) 40 Qgs (nC) 5 Qgd (nC) 9 Configuration Single Low Figure-of-Merit (FOM) Ron x Qg |
Original |
sihd7n60eo-2522011/65/eu2002/95/ec+1 | |
|
Contextual Info: SiHD3N50D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Optimal Design - Low Area Specific On-Resistance - Low Input Capacitance (Ciss) 550 RDS(on) max. () at 25 °C VGS = 10 V 3.2 Qg (max.) (nC) 20 |
Original |
sihd3n50do-2522011/65/eu2002/95/ec+1 | |
|
Contextual Info: SiHD6N62E_RC www.vishay.com Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter |
Original |
sihd6n62ean6095255m3372m+3 | |
TO-247 FULLPAK Package
Abstract: SIHG73N60 SiHF22N60 SIHG22N60E solar pv SIHG24N65 sihg47n60 SiHF7N60E
|
Original |
enerto-247o-247o-220pak/to-263+9 | |