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    SIHD12N50E Search Results

    SIHD12N50E Datasheets (1)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    SIHD12N50E-GE3
    		Vishay Siliconix Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CHAN 500V DPAK Original PDF 194.63KB
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    SIHD12N50E Price and Stock

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    Vishay Siliconix SIHD12N50E-GE3

    MOSFET N-CH 550V 10.5A DPAK
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    DigiKey SIHD12N50E-GE3 Tube 2,680 1
    • 1 $2.21
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    New Advantage Corporation SIHD12N50E-GE3 12,000 1
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    Vishay Intertechnologies SIHD12N50E-GE3

    N-CHANNEL 500V - Tape and Reel (Alt: SIHD12N50E-GE3)
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    Avnet Americas SIHD12N50E-GE3 Reel 22 Weeks 3,000
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    Mouser Electronics SIHD12N50E-GE3 4,699
    • 1 $2.16
    • 10 $1.63
    • 100 $1.12
    • 1000 $0.82
    • 10000 $0.72
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    TTI SIHD12N50E-GE3 Tube 3,000 50
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    TME SIHD12N50E-GE3 1
    • 1 $2.08
    • 10 $1.34
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    EBV Elektronik SIHD12N50E-GE3 23 Weeks 75
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    Vyrian SIHD12N50E-GE3 6,012
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    Vishay Intertechnologies SIHD12N50E-T1-GE3

    MOSFETs N-CHANNEL 500V
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    Mouser Electronics SIHD12N50E-T1-GE3
    • 1 $2.63
    • 10 $1.68
    • 100 $1.14
    • 1000 $0.84
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    Vishay Intertechnologies SIHD12N50E-GE3 (E)

    Mosfet, N-Ch, 500V, 10.5A, To-252-3; Channel Type:N Channel; Drain Source Voltage Vds:500V; Continuous Drain Current Id:10.5A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; Msl:- Rohs Compliant: Yes |Vishay SIHD12N50E-GE3
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    Newark SIHD12N50E-GE3 (E) Cut Tape 1
    • 1 $2.54
    • 10 $2.09
    • 100 $1.55
    • 1000 $1.36
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    Vishay Intertechnologies SIHD12N50EGE3

    POWER MOSFET Power Field-Effect Transistor, 10.5A I(D), 500V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
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    ComSIT USA SIHD12N50EGE3 3,000
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    SIHD12N50E Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: SiHD12N50E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Low figure-of-merit (FOM) Ron x Qg 550 RDS(on) max. at 25 °C (Ω) VGS = 10 V Qg max. (nC) • • • • • 0.380 50 Qgs (nC) 6 Qgd (nC) 10


    Original     		SiHD12N50E O-252) 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Contextual Info: SiHD12N50E_RC www.vishay.com Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter


    Original     		SiHD12N50E AN609, 2845u 1569m 1891m 8738m 07-Oct-14 PDF

    Contextual Info: Product Group: Vishay Siliconix, MOSFETs / January 2015 Author: Philip Zuk Tel: 1 408-970-5298 E-mail: philip.zuk@vishay.com 500 V High-Voltage MOSFETs Built on Gen II Super Junction Technology Feature Extremely Low Conduction and Switching Losses Product Benefits:


    Original     		O-220, O-252, O-263, O-247AC, O-220 SiHB12N50E SiHA12N50E SiHP15N50E SiHB15N60E SiHA15N50E PDF