SIHD12N50E Search Results
SIHD12N50E Datasheets (1)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| SIHD12N50E-GE3 | Vishay Siliconix | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CHAN 500V DPAK | Original | 194.63KB |
SIHD12N50E Price and Stock
Vishay Intertechnologies SIHD12N50E-GE3MOSFET N-CH 550V 10.5A DPAK |
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SIHD12N50E-GE3 | Tube | 2,462 | 1 |
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SIHD12N50E-GE3 | Tape & Reel | 20 Weeks | 3,000 |
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SIHD12N50E-GE3 | 4,684 |
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SIHD12N50E-GE3 | Cut Tape | 1 |
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SIHD12N50E-GE3 | Tube | 3,000 | 50 |
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SIHD12N50E-GE3 | 21 Weeks | 75 |
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Vishay Intertechnologies SIHD12N50E-T1-GE3N-CHANNEL 500V |
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SIHD12N50E-T1-GE3 | Tape & Reel | 2,000 |
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SIHD12N50E-T1-GE3 |
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SIHD12N50E Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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Contextual Info: SiHD12N50E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Low figure-of-merit (FOM) Ron x Qg 550 RDS(on) max. at 25 °C (Ω) VGS = 10 V Qg max. (nC) • • • • • 0.380 50 Qgs (nC) 6 Qgd (nC) 10 |
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SiHD12N50E O-252) 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
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Contextual Info: SiHD12N50E_RC www.vishay.com Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter |
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SiHD12N50E AN609, 2845u 1569m 1891m 8738m 07-Oct-14 | |
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Contextual Info: Product Group: Vishay Siliconix, MOSFETs / January 2015 Author: Philip Zuk Tel: 1 408-970-5298 E-mail: philip.zuk@vishay.com 500 V High-Voltage MOSFETs Built on Gen II Super Junction Technology Feature Extremely Low Conduction and Switching Losses Product Benefits: |
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O-220, O-252, O-263, O-247AC, O-220 SiHB12N50E SiHA12N50E SiHP15N50E SiHB15N60E SiHA15N50E |