SICTE Search Results

SICTE-5

Abstract: sicte5 SICTE15 SICTE12 SICTE36 SICTE-18 SMPTE-22 sicte in6373 SICTE15C
Contextual Info: 1.5 KW EPOXY CASE-C4 TRANSIENT SUPPRESSORS ELECTRICAL CHARACTERISTICS at 25 C SICTE, SIMPTE & IN6373 - IN6389 SERIES (5.0 TO 45 VOLTS) FEATURES: DESCRIPTION . a high quality suppressorfor use in commercial appli­ cations where large voltage transients can permanently

SICTE-5

Contextual Info: SICTE5 Diodes Unidirectional Transient Suppressor Military/High-RelN Minimum Operating Temp øC Maximum Operating Temp (øC) V(BR) Nom.(V)Rev.Break.Voltage6.0 @I(R) (A) (Test Condition)1.0m V(RWM) (V) Work.Pk.Rev.Voltage5.0 I(PPM) Max.(A)Pk.Pulse Current160

SICTE15

Abstract: sicte36 SICTE-10 SICTE18
Contextual Info: 1.5 KW EPOXY CASE-C4 TRANSIENT SUPPRESSORS ELECTRICAL CHARACTERISTICS at 25 C SICTE, SIMPTE & IN6373 - IN6389 SERIES (5.0 TO 45 VOLTS) FEATURES: DESCRIPTION . a high quality suppressor for use in commercial appli­ cations where large voltage transients can permanently

Contextual Info: PRELIMINARY DATA SHEET GaAs MES FET NEZ1414-4E 4 W Ku-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION PACKAGE DIMENSIONS UNIT: mm The NEZ1414-4E is power GaAs FET which provides high gain, high efficiency and high output power in Ku-band. The internal input and output matching enables guaran­

ic MB 16651 G

Abstract: MB 16651 MPC860 jtag tdm RECEIVER 221-217 0xE302 oscillator 10ppm MB 16651 G DS3-M13 V 22916
Contextual Info: Preliminary Information This document contains information on a product under development. The parametric information contains target parameters that are subject to change. M29320 12-Port DS3/E3/STS-1 Electrical Integrated Line Termination Device for Transport Networks

SICTE-12

Abstract: SICTE12
Contextual Info: SENICON COMPONENTS EÒE INC Ö13S1S7 D 000DÔ07 4 r-//-Ä 3 OXY CASE-C4 TRANSIENT SUPPRESSOR! CTRICAL CHARACTERISTICS at 25 C . "'?!iS ^ 1 5 ¿Slfl s<vfe^a?§; 'ÌMllli?: PTE & IN6373 - IN6389 SERIES 5.0 TO 45 VOLTS) FEATURES: DESCRIPTION . a high quality suppressor for use in commercial appli­

1.5KE400P

Abstract: 3A143 P6KE400P SMA4T39 P6KE39CP P6KE200A equivalent tvs505 equivalent TTS144 P6KE27P P6KE12CP
Contextual Info: CROSS REFERENCE PROTECTION DEVICES INDUSTRY STANDARD 1SMA5.0AT3 ↓ 1SMA78AT3 1SMB5.0AT3 ↓ 1SMB170AT3 1SMB5.0CAT3 ↓ 1SMB78CAT3 1SMC5.0AT3 ↓ 1SMC78AT3 1.0KE5.0,A ↓ 1.0KE170P,A 1.0KE5.0C,CA ↓ 1.0KE170C,CA 1.2KE5.0,A ↓ 1.2KE170,A 1.2KE5.0C,CA ↓

ic MB 16651 G

Abstract: MB 16651 G MB 16651 tdm RECEIVER 221-217 DS3-M23 MPC860 jtag 29320-DSH-001-C DATASHEET OF BS 107A DS3-M13
Contextual Info: Preliminary Information This document contains information on a product under development. The parametric information contains target parameters that are subject to change. M29320 12-Port DS3/E3/STS-1 Electrical Integrated Line Termination Device for Transport Networks

Contextual Info: SIEMENS BLUE LINE 3 mm T1 LED LB 3331 Vorläufige Daten / Preliminary Data Besondere Merkmale • • • • • • • klares, farbloses 3-mm Kunststoffgehäuse als optischer Indikator einsetzbar in SiC-Technologie gefertigt in der Spektroskopie einsetzbar

Contextual Info: PRELIMINARY DATA SHEET GaAs MES FET NES2527B-30 30 W S-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION The PACKAGE DIMENSIONS UNIT: mm NES2527B-30 is power GaAs FET which provides high output power and high gain in the 2.5 - 2.7 GHz band. Internal

gaas fet T79

Abstract: ES182
Contextual Info: PRELIMINARY DATA SHEET_ 30 W L-BAND POWER GaAs MESFET OUTLINE DIMENSIONS FEATURES_ NE81K1M0 Units n mm • CLASS A OR AB OPERATION P A C K A G E OUTLINE T-79 • HIGH OUTPUT POWER • HIGH GAIN • HIGH POWER ADDED EFFICIENCY

M66271FP

Abstract: M6627
Contextual Info: To all our customers Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog

transistor tester

Abstract: Polymer Aluminum Capacitor CS 213 Polymer protection ph meter Hitachi die attach film digital microammeter
Contextual Info: Reliability 1. Reliability 1.1 Reliability Characteristics for Semiconductor Devices H ita ch i se m ic o n d u c to r d e v ic e s are d e sig n e d , manufactured and inspected so as to achieve a high level o f reliability. Accordingly, system reliability

GPL06724

Abstract: T670
Contextual Info: BLUE LINETM TOPLED LB T670 Besondere Merkmale Gehäusebauform: P-LCC-2 Gehäusefarbe: weiß als optischer Indikator einsetzbar zur Hinterleuchtung, Lichtleiter- und Linseneinkopplung in SiC-Technologie gefertigt in der Spektroskopie einsetzbar für alle SMT-Bestück- und Löttechniken geeignet

Contextual Info: 77 WS128K32-25G2SMX M/HITE /MICROELECTRONICS 128Kx32 Radiation Hardened SRAM MODULE ADVANCED* FEATURES • A c c ess T im e of 25ns O rg an ize d as 12 8 K x3 2 ; U se r C o n fig u ra b le as 2 5 6 K x 1 6 or ■ 5 1 2Kx8 R a d ia tio n T o le ra n t • T o t a l Dose H ard ness th ro u g h 1 x1 0 6 rad S i02

Contextual Info: PRELIMINARY PRODUCT INFORMATION GaAs MES FET NEZ1011-8E 8 W Ku-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION PACKAGE DIMENSIONS UNIT: mm T h e N E Z 1 0 1 1 -8 E is p o w e r G aA s F ET w hich p ro vid e s high gain, high e fficie n cy and high o u tp u t po w e r in K u-band.

VEB Keramische Werke

Abstract: keramische Werke Hermsdorf halbleiterwerk ddr veb varistor sv Halbleiter Bauelemente der DDR dungs ddr bauelemente hermsdorf bauelemente DDR
Contextual Info: V-5-1 720/62 Ag 71/158/62 Halb fßff&rm /ior r5-1ä r?de 2. Die SV-Typen Varistoren Ausgabe Janu ar 1962 Abbildungen und Werte gelten nur bedingt als Unterlagen für Bestellungen. Rechtsverbindlich ist jeweils die Auftragsbestätigung. Änderungen Vorbehalten!

Y8101

Abstract: Fluke 179 Multimeter circuit diagram FLUKE 79 series II multimeter diagram Fluke 19 Multimeter circuit diagram fluke 8012A fluke Y8101 FLUKE Clamp meter diagram FLUKE 8010a rms dc converter FLUKE 30 Clamp meter diagram FLUKE 79 III manual
Contextual Info: 8010A/8012A Digital Multimeters Instruction Manual FLUKE 8010A/8012A Digital Multimeters Instruction Manual P/N 491944 August 1978 Rev 2 1/85 1985, John Fluke Mfg. Co., Inc. All rights reserved. Litho in U.S.A. IF L U K E I - — ® Dear Customer: Congratulations! We at Fluke are proud to present you with the 8010A and

1N5135

Abstract: SICTE-5 1N4564 SICT-45 SUES110G P6SE6.8 1N5959 1N2370B 1N4538
Contextual Info: PRODUCT LISTINGS d e v ic e p ag e d e v ic e 1N248B. 55 1N249B. 55 1N250B. 55 1N253 thru.50

600w class d circuit diagram schematics

Abstract: TM 1628 IC SCHEMATICS DIAGRAM P6KE200A equivalent 30F126 AP6KE300CA diode P6KE 100 A TISPA79R241 SMBJ40A/CA-TR ZP1400 1SMB5.0CAT3
Contextual Info: ASD and Discrete Products PROTECTION Devices and IPADs™ Improving the Immunity of your System Designer’s Selection Guide USE IN LIFE SUPPORT DEVICES OR SYSTEMS MUST BE EXPRESSLY AUTHORIZED. STMicroelectronics PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL

Contextual Info: PRELIMINARY PRODUCT INFORMATION GaAs MES FET NEZ1414-8E 8 W Ku-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION PACKAGE DIMENSIONS UNIT: mm T h e N E Z 1 4 1 4 -8 E is p o w e r G aA s F ET w hich p ro vid e s high gain, high e fficie n cy and high o u tp u t po w e r in K u-band.

Contextual Info: PRELIMINARY DATA SHEET GaAs MES FET NES1821B-30 30W L-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION PACKAGE DIMENSIONS UNIT: mm The N E S 1 82 1B -3 0 is p o w e r G aA s FET w h ich provides high o u tp u t p o w e r and high gain in the 1.8-2.1

NEC 426

Abstract: NES1417B-30
Contextual Info: PRELIMINARY DATA SHEET GaAs MES FET NES1417B-30 30W L-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION PACKAGE DIMENSIONS UNIT: mm The N E S 1 41 7B -3 0 is p o w e r G aA s FET w h ich provides high o u tp u t p o w e r and high gain in the 1.4-1.7G H z

SPS-181C

Abstract: SPS-189C SPS-235C SPS-281C SPS-289C SPS-135C SPS289 sps28 SPS2 S-181C
Contextual Info: Phototransistor Phototransistor typical characteristics 7 * S •Bs B P ow er dissipation ï - v £<f c * 9 # * * S t o • Â # îfiia f to < M ^ È t o Fig. 2,3) - ^ Y ÿ 'y 'J 7 ^ n u \ y s s v > iO X , V ^ 7 \ <£*)*% • Îiln l^ t É <£<9 ÏF g S ifc - J S B IiS J Îfê 'îi ( P c -T a )