SICTE-5
Abstract: sicte5 SICTE15 SICTE12 SICTE36 SICTE-18 SMPTE-22 sicte in6373 SICTE15C
Contextual Info: 1.5 KW EPOXY CASE-C4 TRANSIENT SUPPRESSORS ELECTRICAL CHARACTERISTICS at 25 C SICTE, SIMPTE & IN6373 - IN6389 SERIES (5.0 TO 45 VOLTS) FEATURES: DESCRIPTION . a high quality suppressorfor use in commercial appli cations where large voltage transients can permanently
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OCR Scan
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IN6373
IN6389
SICTE-10C
SICTE-12C
SICTE-15C
SICTE-18C
SMPTE-10C
SMPTE-12C
SMPTE-15C
SMPTE-18C
SICTE-5
sicte5
SICTE15
SICTE12
SICTE36
SICTE-18
SMPTE-22
sicte
SICTE15C
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SICTE-12
Abstract: SICTE12
Contextual Info: SENICON COMPONENTS EÒE INC Ö13S1S7 D 000DÔ07 4 r-//-Ä 3 OXY CASE-C4 TRANSIENT SUPPRESSOR! CTRICAL CHARACTERISTICS at 25 C . "'?!iS ^ 1 5 ¿Slfl s<vfe^a?§; 'ÌMllli?: PTE & IN6373 - IN6389 SERIES 5.0 TO 45 VOLTS) FEATURES: DESCRIPTION . a high quality suppressor for use in commercial appli
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OCR Scan
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13S1S7
IN6373
IN6389
Bi1N6382
1N6383
1N6384
1N6385
1N6386
SICTE-22C
SMPTE-22C
SICTE-12
SICTE12
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in6373
Abstract: in6383 IN6376 in6385 IN6382 IN6374 IN6384 IN6388 IN6389 in6377
Contextual Info: MicroísemiCorp. f The dtoae experts SANTA ANA, CA SCOTTSDALE, AZ For more inform ation call: 602 941-6300 FEATURES • DESIGNED TO PR O T EC T BIPOLAR AND MOS M ICROPROCESSOR BASED S Y S T E M S FROM IN6373 thru IN6389 and M PTE-5 thru M PTE-45C TRANSIENT
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OCR Scan
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IN6373
IN6389
PTE-45C
12seconds
in6383
IN6376
in6385
IN6382
IN6374
IN6384
IN6388
in6377
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SICTE15
Abstract: sicte36 SICTE-10 SICTE18
Contextual Info: 1.5 KW EPOXY CASE-C4 TRANSIENT SUPPRESSORS ELECTRICAL CHARACTERISTICS at 25 C SICTE, SIMPTE & IN6373 - IN6389 SERIES (5.0 TO 45 VOLTS) FEATURES: DESCRIPTION . a high quality suppressor for use in commercial appli cations where large voltage transients can permanently
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OCR Scan
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IN6373
IN6389
SICTE-10C
SICTE-12C
SICTE-15C
SICTE-18C
SMPTE-10C
SMPTE-12C
SMPTE-15C
SMPTE-18C
SICTE15
sicte36
SICTE-10
SICTE18
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IN6379
Abstract: IN6376 IN6380 in6383 IN6375
Contextual Info: SCOTTSDALE, A l For more information call: 602 941-6300 FEATURES • D ESIGNED TO P R O T E C T B IPO LAR A N D M OS M ICROPROCESSOR BASED S Y S T E M S FRO M IN 6389 and MPTE-5 thru MPTE-45C TRANSIENT ABSORPTION ZENER E L EC T R IC A L D IS TU R B A N C ES .
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OCR Scan
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MPTE-45C
10-9seconds
IN6379
IN6376
IN6380
in6383
IN6375
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in6373
Abstract: IN6377 in6376 in6385 IN6375 in6383 IN6382 IN6374 IN6384 IN6381
Contextual Info: mcROSEni STE coRP D • kllSfltj5 O D G E O M T Microsemi Corp. d m * tm e rts SANTA ANA. CA SCOTTSDALE. A Z For more information call: 602 941-6300 FEA TU RES • DESIGNED TO PR O T EC T BIPOLAR AND MOS M ICROPROCESSOR BASED S Y S T E M S FROM fiT7^ ■
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OCR Scan
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IN6373
IN6389
MPTE-45C
IN6377
in6376
in6385
IN6375
in6383
IN6382
IN6374
IN6384
IN6381
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