IN6379
Abstract: IN6376 IN6380 in6383 IN6375 
 
Contextual Info: SCOTTSDALE, A l For more information call:  602  941-6300 FEATURES • D ESIGNED TO P R O T E C T B IPO LAR A N D M OS M ICROPROCESSOR BASED S Y S T E M S FRO M IN 6389 and MPTE-5 thru MPTE-45C TRANSIENT ABSORPTION ZENER E L EC T R IC A L D IS TU R B A N C ES .
 
 | 
 
OCR Scan
 | 
MPTE-45C 
10-9seconds 
IN6379
IN6376
IN6380
in6383
IN6375
 | 
PDF
 | 
in6373
Abstract: IN6377 in6376 in6385 IN6375 in6383 IN6382 IN6374 IN6384 IN6381 
 
Contextual Info: mcROSEni STE coRP D • kllSfltj5 O D G E O M T Microsemi Corp. d m * tm e rts SANTA ANA. CA SCOTTSDALE. A Z For more information call:  602  941-6300 FEA TU RES • DESIGNED TO PR O T EC T BIPOLAR AND MOS M ICROPROCESSOR BASED S Y S T E M S FROM fiT7^ ■
 
 | 
 
OCR Scan
 | 
IN6373
IN6389
MPTE-45C 
IN6377
in6376
in6385
IN6375
in6383
IN6382
IN6374
IN6384
IN6381
 | 
PDF
 | 
in6373
Abstract: in6383 IN6376 in6385 IN6382 IN6374 IN6384 IN6388 IN6389 in6377 
 
Contextual Info: MicroísemiCorp. f The dtoae experts SANTA ANA, CA SCOTTSDALE, AZ For more inform ation call:   602   941-6300 FEATURES • DESIGNED TO PR O T EC T BIPOLAR AND MOS M ICROPROCESSOR BASED S Y S T E M S FROM IN6373 thru IN6389 and M PTE-5 thru M PTE-45C TRANSIENT
 
 | 
 
OCR Scan
 | 
IN6373
IN6389
PTE-45C 
12seconds
in6383
IN6376
in6385
IN6382
IN6374
IN6384
IN6388
in6377
 | 
PDF
 | 
IN6277
Abstract: in6275 IN6282 IN6281 diode p6000 j IN6287 In6283 IN6284 in6285 in6276 
 
Contextual Info: TRANSIENT VOLTAGE SUPPRESSORS INTRODUCTION TO TRANSIENT VOLTAGE SUPPRESSORS General Semiconductor delivers “state of the art” Transient Voltage Suppressors  TVS . Based on controlled avalanche technology, these voltage clamping devices utilize a specific soft solder construction. This physical design enables these
 
 | 
 
Original
 | 
5KE130 
P6KE150 
P6KE160 
IN6300 
5KE160 
P6KE170 
IN6301 
5KE170 
P6KE180 
IN6302 
IN6277
in6275
IN6282
IN6281
diode p6000 j
IN6287
In6283
IN6284
in6285
in6276
 | 
PDF
 |