IN6379
Abstract: IN6376 IN6380 in6383 IN6375
Contextual Info: SCOTTSDALE, A l For more information call: 602 941-6300 FEATURES • D ESIGNED TO P R O T E C T B IPO LAR A N D M OS M ICROPROCESSOR BASED S Y S T E M S FRO M IN 6389 and MPTE-5 thru MPTE-45C TRANSIENT ABSORPTION ZENER E L EC T R IC A L D IS TU R B A N C ES .
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MPTE-45C
10-9seconds
IN6379
IN6376
IN6380
in6383
IN6375
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in6373
Abstract: IN6377 in6376 in6385 IN6375 in6383 IN6382 IN6374 IN6384 IN6381
Contextual Info: mcROSEni STE coRP D • kllSfltj5 O D G E O M T Microsemi Corp. d m * tm e rts SANTA ANA. CA SCOTTSDALE. A Z For more information call: 602 941-6300 FEA TU RES • DESIGNED TO PR O T EC T BIPOLAR AND MOS M ICROPROCESSOR BASED S Y S T E M S FROM fiT7^ ■
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IN6373
IN6389
MPTE-45C
IN6377
in6376
in6385
IN6375
in6383
IN6382
IN6374
IN6384
IN6381
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KL SN 102 94v-0
Abstract: diode EGP 30D circuit diagram of 5kw smps full bridge MELF ZENER DIODE color bands blue y-349 diode GI 2W06G DO-213AB smd diode color marking code 6j 507 SMD TRANSISTOR smd diode marking g2a zener Marking BJ9
Contextual Info: General Instrument / Power Semiconductor Division / I * r .jr > / INTRODUCTION General Instrument Corporation is a world leader in developing technology, systems and product solutions for the interactive delivery o f video and data. G l’s success results
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IN631C
Abstract: NG37 1N0345 IN6374 1n034 IN631C1W6320
Contextual Info: 1N6309 thru MicrojsemiCorp. 1N6355 / ? The diode experts SANTA ANA, CA F o r more inform ation call: 714 979-8220 500 mW Glass Zener Diodes FEATURES • VOIDLESS HERMETICALLY SEALED GLASS PACKAGE • MICROMINIATURE PACKAGE • TRIPLE LAYER PASSIVATION • METALLURGICALLY BONDED (ABOVE 6.2 VOLTS)
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1N6309
1N6355
MIL-S-19500/533
1N6309
1N6336
1N6320-1N6336
-N6303
1N631
1N631
IN631C
NG37
1N0345
IN6374
1n034
IN631C1W6320
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IN6280
Abstract: IN6285 PGKE180 in6275 IN6287 IN6282 in6276 F6KE440 B2W04P SMW17
Contextual Info: INTRODUCTION TO TRANSIENT VOLTAGE SUPPRESSORS General Semiconductor delivers “state of the art" Transient Voltage Suppressors TVS . Based on controlled avalanche technology, these voltage clamping devices utilize a specific soft solder construction. This physical design enables these
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AKE75
SUBCU64
P6KE82
P6KE31
SMBG475
P6KE100
P6KE110
N8297
15KE120
M6296
IN6280
IN6285
PGKE180
in6275
IN6287
IN6282
in6276
F6KE440
B2W04P
SMW17
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in6373
Abstract: in6383 IN6376 in6385 IN6382 IN6374 IN6384 IN6388 IN6389 in6377
Contextual Info: MicroísemiCorp. f The dtoae experts SANTA ANA, CA SCOTTSDALE, AZ For more inform ation call: 602 941-6300 FEATURES • DESIGNED TO PR O T EC T BIPOLAR AND MOS M ICROPROCESSOR BASED S Y S T E M S FROM IN6373 thru IN6389 and M PTE-5 thru M PTE-45C TRANSIENT
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IN6373
IN6389
PTE-45C
12seconds
in6383
IN6376
in6385
IN6382
IN6374
IN6384
IN6388
in6377
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IN6277
Abstract: in6275 IN6282 IN6281 diode p6000 j IN6287 In6283 IN6284 in6285 in6276
Contextual Info: TRANSIENT VOLTAGE SUPPRESSORS INTRODUCTION TO TRANSIENT VOLTAGE SUPPRESSORS General Semiconductor delivers “state of the art” Transient Voltage Suppressors TVS . Based on controlled avalanche technology, these voltage clamping devices utilize a specific soft solder construction. This physical design enables these
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5KE130
P6KE150
P6KE160
IN6300
5KE160
P6KE170
IN6301
5KE170
P6KE180
IN6302
IN6277
in6275
IN6282
IN6281
diode p6000 j
IN6287
In6283
IN6284
in6285
in6276
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