SI8851EDB Search Results
SI8851EDB Datasheets (1)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| SI8851EDB-T2-E1 | Vishay Siliconix | FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 20V 7.7A MICRO FOOT | Original | 8 |
SI8851EDB Price and Stock
Vishay Siliconix SI8851EDB-T2-E1MOSFET P-CH 20V PWR MICRO FOOT |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SI8851EDB-T2-E1 | Cut Tape | 9,418 | 1 |
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SI8851EDB-T2-E1 | 15,000 | 1 |
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Vishay Intertechnologies SI8851EDB-T2-E1- Tape and Reel (Alt: SI8851EDB-T2-E1) |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SI8851EDB-T2-E1 | Reel | 19 Weeks | 6,000 |
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SI8851EDB-T2-E1 | 2,500 |
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SI8851EDB-T2-E1 | Reel | 6,000 |
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SI8851EDB-T2-E1 | Reel | 6,000 |
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SI8851EDB-T2-E1 | 7,900 |
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Get Quote | |||||||
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SI8851EDB-T2-E1 | 20 Weeks | 3,000 |
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SI8851EDB Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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Contextual Info: Si8851EDB www.vishay.com Vishay Siliconix P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () Max. ID (A) a, d Qg (Typ.) -20 0.0080 at VGS = -4.5 V 0.0086 at VGS = -3.7 V 0.0110 at VGS = -2.5 V 0.0185 at VGS = -1.8 V -16.7 -16.1 -14.2 |
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Si8851EDB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
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Contextual Info: SPICE Device Model Si8851EDB www.vishay.com Vishay Siliconix P-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The sub-circuit model is extracted and optimized over the -55 °C |
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Si8851EDB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
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Contextual Info: Si8851EDB www.vishay.com Vishay Siliconix P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) -20 RDS(on) () Max. ID (A) a, d 0.0080 at VGS = -4.5 V -16.7 0.0086 at VGS = -3.7 V -16.1 0.0110 at VGS = -2.5 V -14.2 0.0185 at VGS = -1.8 V -11 • TrenchFET power MOSFET |
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Si8851EDB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
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Contextual Info: Device Orientation-MICRO FOOT Packages www.vishay.com Vishay Siliconix Device Orientation Options for MOSFETs Part Number: Si8851EDB MICRO FOOT 2.4 mm x 2 mm PART NUMBER METHOD Si8851EDB T2 Device on Tape Orientation 8851 xxx 8851 xxx 8851 |
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Si8851EDB Specification-PACK-0023-17 13-Jan-14 | |
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Contextual Info: V I S H AY I N T E R T E C H N O L O G Y, I N C . MOSFETs MOSFETs - Lowest On-Resistance Per Area Achieved for a P-Channel MOSFET TrenchFET Gen III - P-Channel Breakthrough P-Channel Technology Dramatically Cuts RDS on KEY BENEFITS • Lowest on-resistance per area achieved for a p-channel MOSFET: down to half of |
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SC-75 Si1865DDL Si7997DP SiA923AEDJ SiA929DJ SC-70 SiA527DJ SiA537EDJ VMN-PT0197-1402 | |
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Contextual Info: Vishay Intertechnology, Inc. P-CHANNEL GEN III MOSFETs PowerPAK Thermally Enhanced, High Current Handling Capability LITTLE FOOT® Wide Range of Battery Operated Applications MICRO FOOT® Best RDS on per Outline Area DUAL P-CHANNELS Thermally Enhanced, |
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1212-8S Si7157DP SiSS23DN Si5415AEDU com/mosfets/12-rated-on-res/ VMN-MS6912-1406 | |
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Contextual Info: V I S H AY I N T E R T E C H N O L O G Y, I N C . POWER MOSFETs MOSFETs - Extremely Small Chipscale MOSFETs MICRO FOOT Extremely Small Chipscale MOSFETs KEY BENEFITS • Small MOSFET footprints of 0.8 mm x 0.8 mm, 1 mm x 1 mm, 1.2 mm x 1 mm, 1.5 mm x 1 mm, and 2.4 mm x 2 mm |
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Si8489EDB Si8902AEDB VMN-PT0107-1402 |