SI585 Search Results

Contextual Info: Si5858DU Vishay Siliconix N-Channel 20-V D-S MOSFET with Schottky Diode FEATURES MOSFET PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.039 at VGS = 4.5 V 6 0.045 at VGS = 2.5 V 6 0.055 at VGS = 1.8 V 6 VDS (V) 20 • Halogen-free According to IEC 61249-2-21 Definition

Contextual Info: Si5858DU Vishay Siliconix N-Channel 20-V D-S MOSFET with Schottky Diode FEATURES MOSFET PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.039 at VGS = 4.5 V 6 0.045 at VGS = 2.5 V 6 0.055 at VGS = 1.8 V 6 VDS (V) 20 • Halogen-free According to IEC 61249-2-21 Definition

Si5858DU-T1-GE3

Abstract: si5858
Contextual Info: Si5858DU Vishay Siliconix N-Channel 20-V D-S MOSFET with Schottky Diode FEATURES MOSFET PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.039 at VGS = 4.5 V 6 0.045 at VGS = 2.5 V 6 0.055 at VGS = 1.8 V 6 VDS (V) 20 • Halogen-free According to IEC 61249-2-21 Definition

Si5853DC-T1-GE3

Abstract: Si5853DC
Contextual Info: Si5853DC Vishay Siliconix P-Channel 1.8 V G-S MOSFET with Schottky Diode FEATURES MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.110 at VGS = - 4.5 V - 3.6 - 20 0.160 at VGS = - 2.5 V - 3.0 0.240 at VGS = - 1.8 V - 2.4 • Halogen-free According to IEC 61249-2-21

Marking Code JB

Abstract: SI5855DC-T1 SI5855DC-T1-E3 Si5855DC Si5853DC
Contextual Info: Si5855DC Vishay Siliconix P-Channel 1.8-V G-S MOSFET With Schottky Diode FEATURES MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) 0.110 @ VGS = −4.5 V −3.6 −20 0.160 @ VGS = −2.5 V −3.0 0.240 @ VGS = −1.8 V −2.4 D TrenchFETr Power MOSFETS D Ultra Low Vf Schottky

Si5857DU-T1-GE3

Contextual Info: Si5857DU Vishay Siliconix P-Channel 20-V D-S MOSFET With Schottky Diode FEATURES MOSFET PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.058 at VGS = - 4.5 V 6 0.100 at VGS = - 2.5 V 6 VDS (V) - 20 • Halogen-free • LITTLE FOOT Plus Power MOSFET • New Thermally Enhanced PowerPAK®

82583

Abstract: Si5853DDC-T1-E3 SI5853DDC
Contextual Info: New Product Si5853DDC Vishay Siliconix P-Channel 20-V D-S MOSFET with Schottky Diode FEATURES • LITTLE FOOT Plus Schottky Power MOSFET MOSFET PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.105 at VGS = - 4.5 V - 4a 0.143 at VGS = - 2.5 V - 3.8 0.188 at VGS = - 1.8 V

Contextual Info: SPICE Device Model Si5857DU Vishay Siliconix P-Channel 20-V D-S MOSFET with Schottky Diode CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Contextual Info: Si5858DU New Product Vishay Siliconix N-Channel 20-V D-S MOSFET with Schottky Diode FEATURES MOSFET PRODUCT SUMMARY rDS(on) (W) ID (A)a 0.039 @ VGS = 4.5 V 6 0.045 @ VGS = 2.5 V 6 0.055 @ VGS = 1.8 V 6 VDS (V) 20 D LITTLE FOOTr Plus Power MOSFET D New Thermally Enhanced PowerPAKr

Transistor 5503

Abstract: AN609
Contextual Info: Si5853BDC_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

Contextual Info: SPICE Device Model Si5857DU Vishay Siliconix P-Channel 20-V D-S MOSFET with Schottky Diode CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Si5855CDC

Contextual Info: SPICE Device Model Si5855CDC Vishay Siliconix P-Channel 20-V D-S MOSFET with Schottky Diode CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the - 55 °C to 125 °C Temperature Range

Si5853CDC

Abstract: Si5853DDC-T1-E3 SI5853DDC
Contextual Info: Specification Comparison Vishay Siliconix Si5853DDC vs. Si5853CDC Description: Package: Pin Out: P-Channel, 20-V D-S MOSFET with Schottky Diode 1206-8 ChipFET Identical Part Number Replacements: Si5853DDC-T1-E3 replaces Si5853CDC-T1-E3 ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted

9806

Abstract: 3771 8727 AN609
Contextual Info: Si5855CDC_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/Tank and Cauer/Filter configurations are included. When implemented in P-Spice,

Contextual Info: Si5853DDC Vishay Siliconix P-Channel 20 V D-S MOSFET with Schottky Diode FEATURES MOSFET PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.105 at VGS = - 4.5 V - 4a 0.143 at VGS = - 2.5 V - 3.8 0.188 at VGS = - 1.8 V -3 • Halogen-free According to IEC 61249-2-21

Contextual Info: Si5855DC Vishay Siliconix P-Channel 1.8 V G-S MOSFET with Schottky Diode FEATURES MOSFET PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.110 at VGS = - 4.5 V - 3.6 0.160 at VGS = - 2.5 V - 3.0 0.240 at VGS = - 1.8 V - 2.4 SCHOTTKY PRODUCT SUMMARY VKA (V)

Contextual Info: Si5853DDC Vishay Siliconix P-Channel 20 V D-S MOSFET with Schottky Diode FEATURES MOSFET PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.105 at VGS = - 4.5 V - 4a 0.143 at VGS = - 2.5 V - 3.8 0.188 at VGS = - 1.8 V -3 • Halogen-free According to IEC 61249-2-21

Si5853DC

Contextual Info: SPICE Device Model Si5853DC Vishay Siliconix P-Channel 1.8-V G-S MOSFET with Schottky Diode CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

mosfet marking jb

Abstract: Marking Code JB
Contextual Info: Si5855DC Vishay Siliconix P-Channel 1.8-V G-S MOSFET With Schottky Diode FEATURES MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) 0.110 @ VGS = −4.5 V −3.6 −20 0.160 @ VGS = −2.5 V −3.0 0.240 @ VGS = −1.8 V −2.4 D TrenchFETr Power MOSFETS D Ultra Low Vf Schottky

Contextual Info: Si5853DC Vishay Siliconix P-Channel 1.8-V G-S MOSFET With Schottky Diode MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) −20 ID (A) 0.110 @ VGS = −4.5 V −3.6 0.160 @ VGS = −2.5 V −3.0 0.240 @ VGS = −1.8 V −2.4 SCHOTTKY PRODUCT SUMMARY VKA (V) Vf (v)

Contextual Info: Si5856DC Vishay Siliconix N-Channel 1.8-V G-S MOSFET With Schottky Diode FEATURES MOSFET PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.040 @ VGS = 4.5 V 5.9 0.045 @ VGS = 2.5 V 5.6 0.052 @ VGS = 1.8 V 5.2 D D D D TrenchFETr Power MOSFETS Ultra Low rDS(on)

si5857

Contextual Info: Si5857DU New Product Vishay Siliconix P-Channel 20-V D-S MOSFET with Schottky Diode FEATURES MOSFET PRODUCT SUMMARY rDS(on) (W) ID (A)a 0.058 at VGS = –4.5 V 6 0.100 at VGS = –2.5 V 6 VDS (V) –20 D LITTLE FOOTr Plus Power MOSFET D New Thermally Enhanced PowerPAKr

Contextual Info: Si5855CDC Vishay Siliconix P-Channel 20 V D-S MOSFET with Schottky Diode FEATURES MOSFET PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.144 at VGS = - 4.5 V - 3.7 0.180 at VGS = - 2.5 V - 3.3 0.222 at VGS = - 1.8 V - 3.0 VDS (V) - 20 • Halogen-free According to IEC 61249-2-21

Si5853DC

Abstract: Si5856DC
Contextual Info: Si5856DC Vishay Siliconix N-Channel 1.8-V G-S MOSFET With Schottky Diode FEATURES MOSFET PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.040 @ VGS = 4.5 V 5.9 0.045 @ VGS = 2.5 V 5.6 0.052 @ VGS = 1.8 V 5.2 D D D D TrenchFETr Power MOSFETS Ultra Low rDS(on)