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Transistor 5503 Abstract: AN609 Contextual Info: Si5853BDC_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].	Original	Si5853BDC AN609 CONFI169 08-Aug-07 Transistor 5503	PDF

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Transistor 5503

Abstract: AN609
Contextual Info: Si5853BDC_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

Original

Si5853BDC AN609 CONFI169 08-Aug-07 Transistor 5503

PDF