SI446 Search Results

Contextual Info: AN658 S i 4 4 6 X AND A R I B S TD - T 6 7 C O M P L I A N C E AT 4 2 6 – 4 2 9 M H Z 1. Introduction This application note demonstrates the compliance of Si446x-B0 RFICs with the regulatory requirements of ARIB STD-T67 V1.1, dated November 30th 2005 in the 426/429 MHz band. Although other members of the Si446x

NS4160

Abstract: Si4463DY 4463 SO-8 4463 SO8 MOSFET
Contextual Info: Si4463DY P-Channel 2.5V Specified PowerTrench MOSFET General Description Features This P-Channel 2.5V specified MOSFET uses a rugged gate PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage 2.5V – 12V .

4463 SO8 MOSFET

Abstract: 4463 B
Contextual Info: Si4463DY P-Channel 2.5V Specified PowerTrench MOSFET General Description Features This P-Channel 2.5V specified MOSFET uses a rugged gate PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage 2.5V – 12V .

Contextual Info: Si4463DY Vishay Siliconix P-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) –20 ID (A) 0.014 @ VGS = –4.5 V "10 0.0200 @ VGS = –2.5 V "8.8 S S S SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View D D D D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)

74681

Abstract: 7815 7815 DATASHEET M 1357 AN609 Si4465ADY
Contextual Info: Si4465ADY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

Si4465ADY

Abstract: 73856
Contextual Info: Si4465ADY Vishay Siliconix New Product P-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY VDS (V) -8 rDS(on) (Ω) ID (A)b 0.009 at VGS = - 4.5 V - 13.7 0.011 at VGS = - 2.5 V - 12.4 0.016 at VGS = - 1.8 V - 10 Qg (Typ) 55 nC FEATURES • TrenchFET Power MOSFET

Contextual Info: Si4465ADY Vishay Siliconix P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) -8 RDS(on) (Ω) ID (A)b 0.009 at VGS = - 4.5 V - 13.7 0.011 at VGS = - 2.5 V - 12.4 0.016 at VGS = - 1.8 V - 10 Qg (Typ.) 55 nC • Halogen-free According to IEC 61249-2-21

Contextual Info: Si4462DY Vishay Siliconix New Product N-Channel 200-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 200 rDS(on) (Ω) ID (A) 0.480 at VGS = 10 V 1.50 0.510 at VGS = 6.0 V 1.45 • TrenchFET Power MOSFET • PWM Optimized for fast Switching Pb-free Available

95-4066

Abstract: 3335 9828 AN609 Si4463BDY 69005
Contextual Info: Si4463BDY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

Si4461DY

Abstract: 75576 0723 AN609 si4461
Contextual Info: Si4461DY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/Tank and Cauer/Filter configurations are included. When implemented in P-Spice,

Si4464DY

Abstract: Si4464DY-T1-E3 Si4464DY-T1-GE3 720-51 72051
Contextual Info: Si4464DY Vishay Siliconix N-Channel 200-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 200 ID (A) 0.240 at VGS = 10 V 2.2 0.260 at VGS = 6.0 V 2.1 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • PWM Optimized for Low Qg and Low Rg

AN609

Abstract: Si4462DY 784403
Contextual Info: Si4462DY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

74222

Abstract: Si4451DY Si4451DY-T1-E3 Si4451DY-T1 Si4467DY Si4467DY-T1
Contextual Info: Specification Comparison Vishay Siliconix Si4451DY vs. Si4467DY Description: Package: Pin Out: P-Channel, 12 V D-S MOSFET SO-8 Identical Part Number Replacements Si4451DY-T1-E3 Replaces Si4467DY-T1-E3 Si4451DY-T1 Replaces Si4467DY-T1 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)

Si4463DY

Abstract: 70707
Contextual Info: Si4463DY Vishay Siliconix P-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) –20 ID (A) 0.014 @ VGS = –4.5 V "10 0.0200 @ VGS = –2.5 V "8.8 S S S SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View D D D D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)

SI4464

Abstract: Si4464DY
Contextual Info: SPICE Device Model Si4464DY Vishay Siliconix N-Channel 200-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Si4463BDY

Abstract: Si4463BDY-T1-E3
Contextual Info: New Product Si4463BDY Vishay Siliconix P-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) - 20 rDS(on) (Ω) ID (A) 0.011 at VGS = - 10 V - 13.7 0.014 at VGS = - 4.5 V - 12.3 0.020 at VGS = - 2.5 V - 10.3 RoHS COMPLIANT S SO-8 S 1 8 D S 2 7 D S 3 6 D 5 D

Contextual Info: Si4462DY Vishay Siliconix N-Channel 200-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 200 RDS(on) (Ω) ID (A) 0.480 at VGS = 10 V 1.50 0.510 at VGS = 6.0 V 1.45 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • PWM Optimized for fast Switching

Si4464DY

Contextual Info: SPICE Device Model Si4464DY Vishay Siliconix N-Channel 200-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

7216

Abstract: Si4462DY
Contextual Info: SPICE Device Model Si4462DY Vishay Siliconix N-Channel 200-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Model Subcircuit) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Si4465DY

Abstract: Si4465DY SPICE Device Model
Contextual Info: SPICE Device Model Si4465DY Vishay Siliconix P-Channel 1.8-V G-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Si4466DY

Contextual Info: Si4466DY Vishay Siliconix N-Channel 2.5-V D-S MOSFET PRODUCT SUMMARY VDS (V) 20 RDS(ON) (W) ID (A) 0.009 @ VGS = 4.5 V "13.2 0.013 @ VGS = 2.5 V "11 D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G S Top View N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)

Contextual Info: Si4463DY Vishay Siliconix P-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) −20 FEATURES rDS(on) (W) ID (A) 0.014 @ VGS = −4.5 V −13 0.020 @ VGS = −2.5 V −11 D Lead (Pb)-Free Version is RoHS Compliant Available S SO-8 S 1 8 D S 2 7 D S 3 6 D G

PF7000

Contextual Info: Si4463DY Vishay Siliconix P-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) –20 ID (A) 0.014 @ VGS = –4.5 V "10 0.0200 @ VGS = –2.5 V "8.8 S S S SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View D D D D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)

SI4463BDY

Contextual Info: Si4463BDY Vishay Siliconix New Product P-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.011 @ VGS = −10 V −13.7 0.014 @ VGS = −4.5 V −12.3 0.020 @ VGS = −2.5 V −10.3 −20 S SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View