SI4408DY Search Results

Si4408DY

Contextual Info: Si4408DY New Product Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES D D D D PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.0045 @ VGS = 10 V 21 0.0068 @ VGS = 4.5 V 17 TrenchFETr Power MOSFET PWM Optimized for Fast Switching Low Switching Losses Low Gate Drive Losses

Contextual Info: Si4408DY New Product Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES D D D D D PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.0045 @ VGS = 10 V 21 0.0068 @ VGS = 4.5 V 17 TrenchFETr Power MOSFET PWM Optimized for Fast Switching Low Switching Losses

Si4408DY

Contextual Info: Si4408DY New Product Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES D D D D D PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.0045 @ VGS = 10 V 21 0.0068 @ VGS = 4.5 V 17 TrenchFETr Power MOSFET PWM Optimized for Fast Switching Low Switching Losses

Si4408DY

Contextual Info: Si4408DY New Product Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES D D D D D PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.0045 @ VGS = 10 V 21 0.0068 @ VGS = 4.5 V 17 TrenchFETr Power MOSFET PWM Optimized for Fast Switching Low Switching Losses

Si4408DY

Abstract: Si4408DY-T1-E3
Contextual Info: Si4408DY Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A) 0.0045 at VGS = 10 V 21 0.0068 at VGS = 4.5 V 17 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET • PWM Optimized for Fast Switching

Si4408DY

Contextual Info: SPICE Device Model Si4408DY Vishay Siliconix N-Channel 20-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Si4408DY

Contextual Info: SPICE Device Model Si4408DY Vishay Siliconix N-Channel 20-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Contextual Info: Si4408DY New Product Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES D D D D PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.0045 @ VGS = 10 V 21 0.0068 @ VGS = 4.5 V 17 TrenchFETr Power MOSFET PWM Optimized for Fast Switching Low Switching Losses Low Gate Drive Losses

Si4408DY

Contextual Info: Si4408DY New Product Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES D D D D D PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.0045 @ VGS = 10 V 21 0.0068 @ VGS = 4.5 V 17 TrenchFETr Power MOSFET PWM Optimized for Fast Switching Low Switching Losses

9434

Abstract: A 1137 AN609 Si4408DY 74996
Contextual Info: Si4408DY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

Contextual Info: Si4408DY Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A) 0.0045 at VGS = 10 V 21 0.0068 at VGS = 4.5 V 17 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET • PWM Optimized for Fast Switching

Si4408DY

Abstract: 21A26
Contextual Info: \\\ SPICE Device Model Si4408DY Vishay Siliconix N-Channel 20-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Contextual Info: Si4408DY Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A) 0.0045 at VGS = 10 V 21 0.0068 at VGS = 4.5 V 17 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET • PWM Optimized for Fast Switching

f12 mosfet

Abstract: LT4351 LT4351CMS LT4351IMS MBR0530 Si4862DY ceramic capacitor, .1uF diode lt 246
Contextual Info: LT4351 MOSFET Diode-OR Controller DESCRIPTION FEATURES Low Loss Replacement for ORing Diode in Multiple Sourced Power Supplies n External N-Channel MOSFETs for High Current Capability n Internal Boost Regulator Supply for MOSFET Gate Drive n Wide Input Range: 1.2V to 18V

TNY275PN

Abstract: PLC810 PLC810PG TNY275PN equivalent 2MM5245B-7 D1415 transistor STTH8S06D schematic circuit diagram optocoupler, pfc LTV817A lcd tv power supply
Contextual Info: PLC810PG HiperPLC Family Continuous Mode PFC & LLC Controller with Integrated Half-bridge Drivers Product Highlights Features • Highly integrated, eliminates external components • Frequency and phase synchronized PFC and LLC • Reduced noise and EMI

schematic diagram atx Power supply 500w

Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455

BS250KL-TR1-E3

Abstract: si6435adq-t1-e3 TP0610KL Si9435BDY-T1-e3ct SI6467BDQ-T1-E3 SI1024X-T1-E3 SI5855DC-T1-E3 SIA411DJ-T1-E3 SUM110P06-07L-E3 D2PAK SI1903DL-T1-E3
Contextual Info: NEW! Siliconix MOSFETs Multiple pinout configurations available, see Digi-Key website for data sheet. Fig. Package VDSS V ID (A) RDS(on) (Ω) Digi-Key Part No. Cut Tape Price Each 1 25 100 Tape and Reel ‡ Qty. Pricing Vishay Part No. Fig. 1 — 1206-8

slym065

Abstract: VIN VIN VOUT RSENSE TPS40200 PTH08T2xx CTJ112 CoolRunner-II CPLD GX SOT23 ss3 sot23 TPS75003 TPS78601 TPS79201
Contextual Info: TM Technology for Innovators TM An Analog Product Catalog ➔ Inside Low Dropout Regulators High-Performance RF LDOs .3 Ultra-Low Dropout Linear Regulators with Soft-Start and Tracking.3 2Q 2007 Power Management Solutions

SI2333DS-T1-E3

Abstract: SI2305DS-T1-E3 Si2333 Si2302ADS-T1-E3 SUP75N06-08-E3 si4486ey-t1-e3 SUP60N06-18-E3 SI2308BDS-T1-E3 SI4488DY-T1-E3 2N7002K
Contextual Info: 2017-2012:QuarkCatalogTempNew 9/11/12 9:38 AM Page 2017 25 Power MOSFETs and Buffered H-Bridge Drivers P-Channel PowerPAK 1212-8 PowerPAK 1212-8 Stock No. Mfr.’s Type SI7415DN-T1-E3 SI7107DN-T1-E3 SI7913DN-T1-E3 Configuration VDS V RDS(on) @ –4.5 V (Ω)

FSQ510 Equivalent

Abstract: BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2
Contextual Info: SEMICONDUCTORS MCU/MPU/DSP Atmel. . . . . . . . . 167, 168, 169, 170, 171, 172 Blackhawk. . . . . . . . . . . . . . . . . . . . . . . . . 173 Cyan . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 174 Cypress. . . . . . . . . . . . . . . 175, 176, 177, 178

Arduino Mega2560

Abstract: 13001 S 6D TRANSISTOR arduino uno rev 3 agilent optical encoder 9988 MZ 13001 TRANSISTOR arduino mega 2650 skiip 613 gb 123 ct arduino sound sensor module pic arduino nano mc34063l
Contextual Info: ND3% BASE1 XXXX2108-0010-1-P 10 TSQ: 3001 CMS: CMS-USM TS host OP: NN COMP: 15-07-11 Hour: 13:07 TS:TS date TS time MCUS, MPUS, DSPS & DEVELOPMENT TOOLS Find Datasheets Online 8-BIT MCUS & DEVELOPMENT TOOLS 1 PSoC 3 DEVELOPMENT KITS ARDUINO MCU DEVLOPMENT PLATFORM

IRF1830G

Abstract: IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696
Contextual Info: Power MOSFETs Cross-reference guide May 2005 www.st.com/pmos Contents 2 Alpha and Omega Semiconductor 3 AnalogicTech 3 Anpec 3 APEC 3 APT 4 AUK 4 Fairchild 4 Fuji 12 Hi-Sincerity 14 Hitachi 14 Infineon 14 IR 18 IXYS 22 Matsushita 23 Reneas 23 Motorola 23

irf3717

Abstract: FDV0630-1R0
Contextual Info: LTC3872 No RSENSE Current Mode Boost DC/DC Controller Features Description No Current Sense Resistor Required n V OUT up to 60V n Constant Frequency 550kHz Operation n Internal Soft-Start and Optional External Soft-Start n Adjustable Current Limit n Pulse Skipping at Light Load

transistor CB 308

Abstract: SCHEMATIC DIAGRAM monitor adapter 12v 5A bd 2003 fast charge battery 410k
Contextual Info: LT4351 MOSFET Diode-OR Controller DESCRIPTION FEATURES Low Loss Replacement for ORing Diode in Multiple Sourced Power Supplies n External N-Channel MOSFETs for High Current Capability n Internal Boost Regulator Supply for MOSFET Gate Drive n Wide Input Range: 1.2V to 18V