SI413 Search Results

Si4133-GT

Abstract: SI4133-D-GM Si4133-GM si4133-d-gt SI4112-D-GT SI4122DG Si4113 Si4122 Si4123 Si4133
Contextual Info: Si4133 Si4123/22/13/12 DUAL-BAND RF SYNTHESIZER WITH INTEGRATED VCOS FOR WIRELESS COMMUNICATIONS FEATURES Dual-band RF synthesizers RF1: 900 MHz to 1.8 GHz RF2: 750 MHz to 1.5 GHz IF synthesizer IF: 62.5 to 1000 MHz Integrated VCOs, loop filters, varactors, and resonators

Si4133G-BT

Abstract: Si4113G Si4122G Si4123G Si4123G-BT Si4133G Si4133G-BM PLL IC 566 Si412 Synthesizers with 3.0 GHz Integer PLL
Contextual Info: Si4133G Si4123G/22G/13G/12G DUAL-BAND RF SYNTHESIZER WITH INTEGRATED VCOS FOR GSM AND GPRS WIRELESS COMMUNICATIONS Ordering Information: See page 28. Applications Pin Assignments GSM 850, E-GSM 900, DCS 1800, and PCS 1900 cellular telephones GPRS data terminals

Si4200-BM

Abstract: Si4200 SEN 1327 Si4133T-bm DCS 1800 RX SAW Filter Si4133T Si4201 SAFEK881MFL0T00R00 Si4201-BM transceiver gsm
Contextual Info: Aero A E R O T R A N S C E I V E R F O R GSM A N D G PR S WIRELESS COMMUNICATIONS Features Quad-band support: GSM 850 Class 4, small MS E-GSM 900 Class 4, small MS DCS 1800 Class 1 PCS 1900 Class 1 Si4200: 5 x 5 mm QFN32 Si4201: 4 x 4 mm QFN20 Si4133T: 5 x 5 mm QFN28

Contextual Info: New Product Si4136DY Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.002 at VGS = 10 V 46 0.0025 at VGS = 4.5 V 41 VDS (V) 20 • Halogen-free According to IEC 61249-2-21 • TrenchFET Power MOSFET • 100 % Rg and UIS Tested

Si4134DY-T1-E3

Abstract: si4134 c065
Contextual Info: Si4134DY Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 a RDS(on) () ID (A) 0.014 at VGS = 10 V 14 0.0175 at VGS = 4.5 V 12.5 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg and UIS Tested

Contextual Info: Si4134DY Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 a RDS(on) () ID (A) 0.014 at VGS = 10 V 14 0.0175 at VGS = 4.5 V 12.5 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg and UIS Tested

1.6946

Abstract: 40559 mosfet AN609
Contextual Info: Si4136DY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/Tank and Cauer/Filter configurations are included. When implemented in P-Spice,

Si4112G

Abstract: Si4113G Si4122G Si4123G Si4133G Si4133G-BT Si4133G-EVB Si4133G-KT
Contextual Info: Si4133G RF Synthesizer for GPRS DUAL-BAND RF FREQUENCY SYNTHESIZER WITH INTEGRATED VCOs FOR WIRELESS COMMUNICATIONS FEATURES • Dual-Band RF Synthesizers: RF1 900 MHz to 1.8 GHz RF2 750 MHz to 1.5 GHz • IF Synthesizer: IF 62.5 MHz to 1.0 GHz • Settling time <150 µS for multi-slot data

Si4136

Abstract: wireless circuit diagram passive RF divider
Contextual Info: Si4136 I SM RF S Y N T H E S I Z E R W I T H I N T E G R A T E D VCO S F O R WIRELESS COMMUNICATIONS Features ! Dual-Band RF Synthesizers " " ! ! RF1 VCO Fixed Frequency Range of 2300 MHz to 2600 MHz ! RF2 VCO Fixed Frequency Range ! ! of 2000 MHz to 2400 MHz

Contextual Info: SPICE Device Model Si4136DY www.vishay.com Vishay Siliconix N-Channel 100 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C

Contextual Info: New Product Si4136DY Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.002 at VGS = 10 V 46 0.0025 at VGS = 4.5 V 41 VDS (V) 20 • Halogen-free According to IEC 61249-2-21 • TrenchFET Power MOSFET • 100 % Rg and UIS Tested

Contextual Info: Si4134DY Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 a RDS(on) () ID (A) 0.014 at VGS = 10 V 14 0.0175 at VGS = 4.5 V 12.5 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg and UIS Tested

Contextual Info: New Product Si4136DY Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.002 at VGS = 10 V 46 0.0025 at VGS = 4.5 V 41 VDS (V) 20 • Halogen-free According to IEC 61249-2-21 • TrenchFET Power MOSFET • 100 % Rg and UIS Tested

Contextual Info: Si4134DY Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 a RDS(on) () ID (A) 0.014 at VGS = 10 V 14 0.0175 at VGS = 4.5 V 12.5 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg and UIS Tested

Si4136XM-BT

Abstract: ndr 550 Si4136XM
Contextual Info: Si4136XM R F S Y N T H E S I Z E R W I T H I N T E G R A T E D V CO S F O R SATELLITE RADIO Features ! Dual-Band RF Synthesizers ! RF1: 2300 MHz to 2500 MHz RF2: 2025 MHz to 2300 MHz ! " " ! IF Synthesizer " ! ! ! 62.5 MHz to 1000 MHz Integrated VCOs, Loop Filters,

Contextual Info: New Product Si4136DY Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.002 at VGS = 10 V 46 0.0025 at VGS = 4.5 V 41 VDS (V) 20 • Halogen-free According to IEC 61249-2-21 • TrenchFET Power MOSFET • 100 % Rg and UIS Tested

SI4134DY-T1-GE3

Abstract: Si4134DY si4134
Contextual Info: New Product Si4134DY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.014 at VGS = 10 V 14 0.0175 at VGS = 4.5 V 12.5 VDS (V) 30 • Halogen-free According to IEC 61249-2-21 • TrenchFET Power MOSFET • 100 % Rg and UIS Tested

Si4133W

Abstract: Si4133W-BM Si4133WM-EVB Wideband Synthesizer
Contextual Info: Si4133W RF Synthesizer for W-CDMA DUAL-BAND RF FREQUENCY SYNTHESIZER WITH INTEGRATED VCOS FOR W-CDMA WIRELESS COMMUNICATIONS FEATURES • Dual-Band RF Synthesizers RF1: 2.3 GHz to 2.5 GHz RF2: 750 MHz to 1.65 GHz • IF Synthesizer IF: 62.5 MHz to 1.0 GHz

50 33g

Contextual Info: Si4133/33G-EVB E VALUATION B OA RD F O R T H E S YNTHESIZER F AMILIES Description The Si4133/Si4133G synthesizer family evaluation board is a complete, PC-based evaluation platform for the following Silicon Laboratories devices and their derivatives:  Si4133

SI4134DY

Abstract: si4134 model 846
Contextual Info: SPICE Device Model Si4134DY Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Si412

Contextual Info: Si4133 Si4123/22/13/12 DUAL-BAND RF SYNTHESIZER WITH INTEGRATED VCOS FOR WIRELESS COMMUNICATIONS FEATURES Dual-band RF synthesizers RF1: 900 MHz to 1.8 GHz RF2: 750 MHz to 1.5 GHz IF synthesizer IF: 62.5 to 1000 MHz Integrated VCOs, loop filters, varactors, and resonators

31BC30

Contextual Info: New Product Si4136DY Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.002 at VGS = 10 V 46 0.0025 at VGS = 4.5 V 41 VDS (V) 20 • Halogen-free According to IEC 61249-2-21 • TrenchFET Power MOSFET • 100 % Rg and UIS Tested

Si4126

Abstract: Si4126-BM Si4136 Si4136-BM Si4136-BT
Contextual Info: Si4136/Si4126 ISM RF SYNTHESIZER WITH INTEGRATED VCOS FOR WIRELESS COMMUNICATIONS Features Dual-band RF synthesizers Minimal external components required Low phase noise 5 µA standby current 25.7 mA typical supply current 2.7 V to 3.6 V operation Packages: 24-pin TSSOP,

Si4136-F-BM

Abstract: Si4136-F-GT Si4126-F-GM Si4136-BM Si4136-BT Si4136-F-BT Si4136-F-GM Si4126-F-BM Si4136
Contextual Info: Si4136/Si4126 ISM RF SYNTHESIZER WITH INTEGRATED VCOS FOR WIRELESS COMMUNICATIONS Features Dual-band RF synthesizers Minimal external components required Low phase noise 5 µA standby current 25.7 mA typical supply current 2.7 V to 3.6 V operation Packages: 24-pin TSSOP,