SI412 Search Results

Si4133-GT

Abstract: SI4133-D-GM Si4133-GM si4133-d-gt SI4112-D-GT SI4122DG Si4113 Si4122 Si4123 Si4133
Contextual Info: Si4133 Si4123/22/13/12 DUAL-BAND RF SYNTHESIZER WITH INTEGRATED VCOS FOR WIRELESS COMMUNICATIONS FEATURES Dual-band RF synthesizers RF1: 900 MHz to 1.8 GHz RF2: 750 MHz to 1.5 GHz IF synthesizer IF: 62.5 to 1000 MHz Integrated VCOs, loop filters, varactors, and resonators

Si4133G-BT

Abstract: Si4113G Si4122G Si4123G Si4123G-BT Si4133G Si4133G-BM PLL IC 566 Si412 Synthesizers with 3.0 GHz Integer PLL
Contextual Info: Si4133G Si4123G/22G/13G/12G DUAL-BAND RF SYNTHESIZER WITH INTEGRATED VCOS FOR GSM AND GPRS WIRELESS COMMUNICATIONS Ordering Information: See page 28. Applications Pin Assignments GSM 850, E-GSM 900, DCS 1800, and PCS 1900 cellular telephones GPRS data terminals

78a17

Abstract: Si4128DY-T1-E3 si4128 Si4128DY-T1-GE3 Si4128DY
Contextual Info: New Product Si4128DY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.024 at VGS = 10 V 10.9 0.030 at VGS = 4.5 V 9.7 VDS (V) 30 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET

Contextual Info: New Product Si4122DY Vishay Siliconix N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0045 at VGS = 10 V 27.2 0.006 at VGS = 4.5 V 23.5 VDS (V) 40 • Halogen-free • TrenchFET Power MOSFET • 100 % Rg and UIS Tested Qg (Typ.)

Contextual Info: New Product Si4122DY Vishay Siliconix N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0045 at VGS = 10 V 27.2 0.006 at VGS = 4.5 V 23.5 VDS (V) 40 • Halogen-free • TrenchFET Power MOSFET • 100 % Rg and UIS Tested Qg (Typ.)

Contextual Info: New Product Si4128DY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.024 at VGS = 10 V 10.9 0.030 at VGS = 4.5 V 9.7 VDS (V) 30 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET

Contextual Info: New Product Si4128BDY Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () (Max.) ID (A) 0.021 at VGS = 10 V 12a 0.033 at VGS = 4.5 V 6 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET

Si4126DY

Abstract: 2936 7406 datasheet 9940 AN609
Contextual Info: Si4126DY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/Tank and Cauer/Filter configurations are included. When

si4124

Contextual Info: New Product Si4124DY Vishay Siliconix N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)d 0.0075 at VGS = 10 V 20.5 0.009 at VGS = 4.5 V 18.7 VDS (V) 40 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET

AN609

Contextual Info: Si4124DY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/Tank and Cauer/Filter configurations are included. When

Si4126DY

Contextual Info: New Product Si4126DY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.00275 at VGS = 10 V 39 0.0034 at VGS = 4.5 V 35 VDS (V) 30 • Halogen-free • TrenchFET Power MOSFET • 100 % Rg and UIS Tested Qg (Typ.)

si4128

Abstract: si41
Contextual Info: New Product Si4128DY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.024 at VGS = 10 V 10.9 0.030 at VGS = 4.5 V 9.7 VDS (V) 30 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET

Contextual Info: New Product Si4126DY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.00275 at VGS = 10 V 39 0.0034 at VGS = 4.5 V 35 VDS (V) 30 • Halogen-free • TrenchFET Power MOSFET • 100 % Rg and UIS Tested Qg (Typ.)

Contextual Info: New Product Si4128DY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.024 at VGS = 10 V 10.9 0.030 at VGS = 4.5 V 9.7 VDS (V) 30 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET

Contextual Info: New Product Si4124DY Vishay Siliconix N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 40 ID (A)d RDS(on) (Ω) 0.0075 at VGS = 10 V 20.5 0.009 at VGS = 4.5 V 18.7 • TrenchFET Power MOSFET • 100 % Rg Tested Qg (Typ.) RoHS 21 nC APPLICATIONS

Contextual Info: New Product Si4126DY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.00275 at VGS = 10 V 39 0.0034 at VGS = 4.5 V 35 VDS (V) 30 • Halogen-free • TrenchFET Power MOSFET • 100 % Rg and UIS Tested Qg (Typ.)

Si4122DY_RC

Abstract: SI4122DY AN609 121621
Contextual Info: Si4122DY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/Tank and Cauer/Filter configurations are included. When implemented in P-Spice,

SI4128DY

Contextual Info: SPICE Device Model Si4128DY Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the - 55 °C to 125 °C Temperature Range

Si412

Contextual Info: Si4133 Si4123/22/13/12 DUAL-BAND RF SYNTHESIZER WITH INTEGRATED VCOS FOR WIRELESS COMMUNICATIONS FEATURES Dual-band RF synthesizers RF1: 900 MHz to 1.8 GHz RF2: 750 MHz to 1.5 GHz IF synthesizer IF: 62.5 to 1000 MHz Integrated VCOs, loop filters, varactors, and resonators

Contextual Info: New Product Si4128BDY Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () (Max.) ID (A) 0.021 at VGS = 10 V 12a 0.033 at VGS = 4.5 V 6 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET

Si4126

Abstract: Si4126-BM Si4136 Si4136-BM Si4136-BT
Contextual Info: Si4136/Si4126 ISM RF SYNTHESIZER WITH INTEGRATED VCOS FOR WIRELESS COMMUNICATIONS Features Dual-band RF synthesizers Minimal external components required Low phase noise 5 µA standby current 25.7 mA typical supply current 2.7 V to 3.6 V operation Packages: 24-pin TSSOP,

Si4136-F-BM

Abstract: Si4136-F-GT Si4126-F-GM Si4136-BM Si4136-BT Si4136-F-BT Si4136-F-GM Si4126-F-BM Si4136
Contextual Info: Si4136/Si4126 ISM RF SYNTHESIZER WITH INTEGRATED VCOS FOR WIRELESS COMMUNICATIONS Features Dual-band RF synthesizers Minimal external components required Low phase noise 5 µA standby current 25.7 mA typical supply current 2.7 V to 3.6 V operation Packages: 24-pin TSSOP,

6860-1

Abstract: SI-4124 16a55
Contextual Info: New Product Si4124DY Vishay Siliconix N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 40 ID (A)d RDS(on) (Ω) 0.0075 at VGS = 10 V 20.5 0.009 at VGS = 4.5 V 18.7 • TrenchFET Power MOSFET • 100 % Rg Tested Qg (Typ.) RoHS 21 nC APPLICATIONS

si4126

Abstract: Si4126DY 265b S8089
Contextual Info: New Product Si4126DY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.00275 at VGS = 10 V 39 0.0034 at VGS = 4.5 V 35 VDS (V) 30 • Halogen-free • TrenchFET Power MOSFET • 100 % Rg and UIS Tested Qg (Typ.)