SI4124 Search Results

si4124

Contextual Info: New Product Si4124DY Vishay Siliconix N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)d 0.0075 at VGS = 10 V 20.5 0.009 at VGS = 4.5 V 18.7 VDS (V) 40 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET

AN609

Contextual Info: Si4124DY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/Tank and Cauer/Filter configurations are included. When

Contextual Info: New Product Si4124DY Vishay Siliconix N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 40 ID (A)d RDS(on) (Ω) 0.0075 at VGS = 10 V 20.5 0.009 at VGS = 4.5 V 18.7 • TrenchFET Power MOSFET • 100 % Rg Tested Qg (Typ.) RoHS 21 nC APPLICATIONS

6860-1

Abstract: SI-4124 16a55
Contextual Info: New Product Si4124DY Vishay Siliconix N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 40 ID (A)d RDS(on) (Ω) 0.0075 at VGS = 10 V 20.5 0.009 at VGS = 4.5 V 18.7 • TrenchFET Power MOSFET • 100 % Rg Tested Qg (Typ.) RoHS 21 nC APPLICATIONS

Contextual Info: New Product Si4124DY Vishay Siliconix N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)d 0.0075 at VGS = 10 V 20.5 0.009 at VGS = 4.5 V 18.7 VDS (V) 40 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET

Contextual Info: SPICE Device Model Si4124DY www.vishay.com Vishay Siliconix N-Channel 40 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C

Contextual Info: New Product Si4124DY Vishay Siliconix N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)d 0.0075 at VGS = 10 V 20.5 0.009 at VGS = 4.5 V 18.7 VDS (V) 40 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET

Contextual Info: New Product Si4124DY Vishay Siliconix N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)d 0.0075 at VGS = 10 V 20.5 0.009 at VGS = 4.5 V 18.7 VDS (V) 40 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET

68142

Contextual Info: SPICE Device Model Si4124DY Vishay Siliconix N-Channel 40-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Contextual Info: New Product Si4124DY Vishay Siliconix N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)d 0.0075 at VGS = 10 V 20.5 0.009 at VGS = 4.5 V 18.7 VDS (V) 40 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET

si7121

Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
Contextual Info: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®

Diode SOT-23 marking 15d

Abstract: SI4210 si4812b SI-4102 SI7149DP SiM400 si4932 si7135 SiB914 SI4477
Contextual Info: V ISHAY INTERTECHN O L O G Y , INC . M O S F ET s LITTLE F O O T LITTLE F O O T ® P l u s Tr e n c h F E T ® Sk yFE T® Tu r b o F E T ® ChipFE T® P o w e r PA K ® P o l a r PA K ® P o w e r PA I R w w w. v i s h a y. c o m Selector Guide low-voltage Power MOSFETs