SI3911 Search Results
SI3911 Datasheets (5)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| Si3911DV | Vishay Intertechnology | Dual P-Channel 20-V (D-S) MOSFET | Original | 44.3KB | 4 | ||
| SI3911DV | Vishay Siliconix | Dual P-Channel 20-V (D-S) MOSFET | Original | 44.28KB | 4 | ||
| Si3911DV SPICE Device Model | Vishay | Dual P-Channel 20-V (D-S) MOSFET | Original | 216.51KB | 3 | ||
| SI3911DV-T1-E3 | Vishay Siliconix | FETs - Arrays, Discrete Semiconductor Products, MOSFET 2P-CH 20V 1.8A 6TSOP | Original | 9 | |||
| SI3911DV-T1-GE3 | Vishay Siliconix | FETs - Arrays, Discrete Semiconductor Products, MOSFET 2P-CH 20V 1.8A 6TSOP | Original | 9 |
SI3911 Price and Stock
Vishay Intertechnologies SI3911DV-T11800 MA, 20 V, 2 CHANNEL, P-CHANNEL, SI, SMALL SIGNAL, MOSFET |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SI3911DV-T1 | 2,252 |
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Buy Now | |||||||
Vishay Siliconix SI3911DV-T1-E3SMALL SIGNAL FIELD-EFFECT TRANSISTOR, 1.8A I(D), 20V, 2-ELEMENT, P-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SI3911DV-T1-E3 | 72 |
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Buy Now | |||||||
SI3911 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
Si3911
Abstract: SI3911DV
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Original |
si3911dv2002/95/ecsi3911dv-t1-e3si3911dv-t1-ge3+3 | |
SI3911DVContextual Info: Si3911DV New Product Vishay Siliconix Dual P-Channel 20-V D-S MOSFET PRODUCT SUMMARY VDS (V) –20 rDS(on) (W) ID (A) 0.145 @ VGS = –4.5 V –2.2 0.200 @ VGS = –2.5 V –1.8 0.300 @ VGS = –1.8 V –1.5 S1 S2 TSOP-6 Top View G1 1 6 D1 G1 3 mm S2 2 5 |
Original |
si3911dvs-02722--rev11-dec-00 | |
Si3911DVContextual Info: SPICE Device Model Si3911DV Vishay Siliconix Dual P-Channel 20-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range |
Original |
si3911dv30-apr-02 | |
Si3911DVContextual Info: Si3911DV New Product Vishay Siliconix Dual P-Channel 20-V D-S MOSFET PRODUCT SUMMARY VDS (V) –20 rDS(on) (W) ID (A) 0.145 @ VGS = –4.5 V –2.2 0.200 @ VGS = –2.5 V –1.8 0.300 @ VGS = –1.8 V –1.5 S1 S2 TSOP-6 Top View G1 1 6 D1 G1 3 mm S2 2 5 |
Original |
si3911dv18-jul-08 | |
Si3911DVContextual Info: SPICE Device Model Si3911DV Vishay Siliconix Dual P-Channel 20-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range |
Original |
si3911dv18-jul-08 | |
Si3911DV
Abstract: us50-24
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si3911dv2002/95/ecsi3911dv-t1-e3si3911dv-t1-ge3+2 | |
S-20275
Abstract: Si3911DV 125C42
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Original |
si3911dv08-apr-05s-20275125c42 | |
410561
Abstract: 1347 AN609 Si3911DV
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Original |
si3911dvan60914-mar-07410561+1 | |
Si3911DVContextual Info: SPICE Device Model Si3911DV Vishay Siliconix Dual P-Channel 20-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range |
Original |
si3911dvs-5083616-may-05 | |
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Contextual Info: Si3911DV Vishay Siliconix Dual P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.145 at VGS = - 4.5 V - 2.2 - 20 0.200 at VGS = - 2.5 V - 1.8 0.300 at VGS = - 1.8 V - 1.5 • Halogen-free According to IEC 61249-2-21 Definition |
Original |
si3911dv2002/95/ecsi3911dv-t1-e3si3911dv-t1-ge3+3 | |
Si3911DVContextual Info: Si3911DV New Product Vishay Siliconix Dual P-Channel 20-V D-S MOSFET PRODUCT SUMMARY VDS (V) –20 rDS(on) (W) ID (A) 0.145 @ VGS = –4.5 V –2.2 0.200 @ VGS = –2.5 V –1.8 0.300 @ VGS = –1.8 V –1.5 S1 S2 TSOP-6 Top View G1 1 6 D1 G1 3 mm S2 2 5 |
Original |
si3911dvs-20275--rev18-mar-02 | |
SI3911DV-T1Contextual Info: Si3911DV Vishay Siliconix Dual P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.145 at VGS = - 4.5 V - 2.2 - 20 0.200 at VGS = - 2.5 V - 1.8 0.300 at VGS = - 1.8 V - 1.5 • Halogen-free According to IEC 61249-2-21 Definition |
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si3911dv2002/95/ecsi3911dv-t1-e3si3911dv-t1-ge3+2 | |
9n90c
Abstract: 9n50c IGBT 20N50 kmb*050n60p 7N65C 5n50c smd diode S4 58a 2N60C 2N60 MOSFET SMPS str TV SMPS
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2n70002n7000a2n7000k70max+13 | |
SMD resistors 1806
Abstract: SMD zener diode 202 1N4148WS
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hpc0201ahpc0402ahpc0402b/chpc0603a+3 | |
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BS250KL-TR1-E3
Abstract: si6435adq-t1-e3 TP0610KL Si9435BDY-T1-e3ct SI6467BDQ-T1-E3 SI1024X-T1-E3 SI5855DC-T1-E3 SIA411DJ-T1-E3 SUM110P06-07L-E3 D2PAK SI1903DL-T1-E3
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si3865bdv-t1-e3ct-ndsi4720cy-t1-e3ct-ndsi6924aedq-t1-e3ct-ndsi1040x-t1-e3tr-nd+16 | |
VN10KLS
Abstract: mosfet bs250 Si4730 SUP85N03-04P VN66AFD Si4835DY si5504 SI3459DV sup65p06 sub75p05
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si4831dysi4833dysi4852dysi4816dy+14 | |
BS250KL
Abstract: tsop6 marking 345 SUD50P08 SI3437 SUD19P06-60L MOSFET SUB75P03 tsop6 marking 443 Si5947DU Si1471DH SI1073X
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sc-75sc-75asc-89bs250kl+9 | |
Siliconix
Abstract: Siliconix mosfet guide siliconix VN10KM Power MOSFET Cross Reference Guide FDC6323L fdn5618p 2n7002 siliconix BS170 equivalent of BS170 VN10KM equivalent
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2n70002n70022n7002e2n7002k+15 | |
GS 069
Abstract: Si5902DC SPICE Device Model tsop6 marking 312 sC89-6 Si7705DN SI7100DN Si3865BDV Si5947DU Si3861BDV 1212-8
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si9165si9169600-matssop-20+12 | |
220v AC voltage stabilizer schematic diagram
Abstract: LG color tv Circuit Diagram tda 9370 1000w inverter PURE SINE WAVE schematic diagram schematic diagram atx Power supply 500w TV SHARP IC TDA 9381 PS circuit diagram wireless spy camera 9744 mini mainboard v1.2 sony 279-87 transistor E 13005-2 superpro lx
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ad9272p462-ndlng295lfcp2up463-nd+11 | |