SI 2343 Search Results

2n7604

Contextual Info: PRELIMINARY PD-97177B 2N7604U2 IRHLNA77064 60V, N-CHANNEL RADIATION HARDENED LOGIC LEVEL POWER MOSFET SURFACE MOUNT SMD-2 TECHNOLOGY ™ Product Summary Part Number IRHLNA77064 Radiation Level 100K Rads (Si) RDS(on) 0.012Ω ID 56A* IRHLNA73064 300K Rads (Si)

IRHLNA73064

Abstract: IRHLNA77064 2N760 56a SMD diode PD-97
Contextual Info: PD-97177B 2N7604U2 IRHLNA77064 60V, N-CHANNEL RADIATION HARDENED LOGIC LEVEL POWER MOSFET SURFACE MOUNT SMD-2 TECHNOLOGY ™ Product Summary Part Number IRHLNA77064 Radiation Level 100K Rads (Si) RDS(on) 0.012Ω ID 56A* IRHLNA73064 300K Rads (Si) 0.012Ω

Contextual Info: PRELIMINARY PD-97177B 2N7604U2 IRHLNA77064 60V, N-CHANNEL RADIATION HARDENED LOGIC LEVEL POWER MOSFET SURFACE MOUNT SMD-2 TECHNOLOGY ™ Product Summary Part Number IRHLNA77064 Radiation Level 100K Rads (Si) RDS(on) 0.012Ω ID 56A* IRHLNA73064 300K Rads (Si)

IRHLNA73064

Abstract: IRHLNA77064
Contextual Info: PD-97177A RADIATION HARDENED LOGIC LEVEL POWER MOSFET SURFACE MOUNT SMD-2 IRHLNA77064 60V, N-CHANNEL TECHNOLOGY ™ Product Summary Part Number IRHLNA77064 Radiation Level 100K Rads (Si) RDS(on) 0.012Ω ID 56A* IRHLNA73064 300K Rads (Si) 0.012Ω 56A* SMD-2

X9520

Abstract: X9520V20I-A X9520V20I-AT1 X9520V20I-AT2 X9520V20I-B X9520V20I-BT1 X9520V20IZ-A X9520V20IZ-AT1 X9520V20IZ-AT2 X9520V20IZ-B
Contextual Info: NS E SI G D W CT R NE ODU Channel/Gigabit Ethernet Laser Diode Control for Fiber Optic Modules R D FO E PFiber E D EN UT T M I T M 6 S O 34 Sheet S UB R EC August 20, 2007 FN8206.2 L22Data NOT SSIBLE 2343, IS 2 O L P IS X9520 Triple DCP, POR, 2kbit EEPROM Memory,

transistor ecg36

Abstract: transistor ECG 152 TRANSISTOR ecg 379 transistor. ECG 123AP transistor ECG 332 ecg 126 transistor TRANSISTOR ECG 69 TRANSISTOR Outlines ecg 123 transistor transistor pnp ecg 180
Contextual Info: PHILIP S E C 6 INC S4E D Transistors cont d ECG Type Description and Application ECG36 NPN-Si, Pwr Amp, Hi Speed ECG36MP* Switch (Compì to ECG37) • bbS3TSfl DDD714b MECG (Maximum Ratings at Tc = 25°C Unless Otherwise Noted) Collector To Base Volts b v Cbo

transistor ECG 152

Abstract: Bt 2313 transistor outlines transistor ecg36 TRANSISTOR ecg 379 ECG157 123AP transistor ECG 332 Philips ECG 152 ECG 3041
Contextual Info: PHILIP S E C 6 INC S4E D Transistors cont d ECG Type ECG36 NPN-Si, Pwr Amp, Hi Speed ECG36MP* Switch (Compì to ECG37) MECG bbS3TSfl DDD714b (Maximum Ratings at Tc = 25°C Unless Otherwise Noted) Collector To Base Volts b v Cbo Description and Application

Transistor 2SA 2SB 2SC 2SD

Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
Contextual Info: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle

78m5

Abstract: mt59 PT2622
Contextual Info: SY M B O L S & C O D ES E X P L A IN E D 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 1 9 GERMANIUM N PN 110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C I I MIN. MAX Pc T6TT

MHT1810

Abstract: 2n1821 113003 2N463 MHT2008 2n2585 A580-1202 A580-1603 ASZ16 MP1534
Contextual Info: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B LINE No. H H TYPE No. ABSOiLOTE M A X . RATIING S Ä 2 5 C I I M IN . M A X Pc T 6 T T

HV51

Abstract: PML 005 A C708 352-MHz
Contextual Info: C O N N O R -lilIN FIE L D 4bE CORP D 2343431 • 0 0 0 0 4 CH b HCN U - AURORA. IL. 60505 CONNOR-WINFIELD CORPORATION PHONE <708 851-4722 FAX 708) 851-5040 _ OSCILLATORS r^'/5 HIGH SPEED CMOS

AD166

Abstract: 2SB123 transistor 2N1434 ASZ16 LT5085
Contextual Info: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 1 9 GERMANIUM N PN 110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C MAX. 1 hFE II MIN. MAX Pc T6TT

KL8503

Abstract: CK256 CK258 CK311 CK312 CK313 CK314 2SB26 KM7002 MS7 package
Contextual Info: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B LINE No. H H TYPE No. ABSOiLOTE M A X . RATIING S Ä 2 5 C I I M IN . M A X Pc T 6 T T

TI3028

Abstract: TI3027 TI-3028 2S52 NKT501 MP1560A ti3029 ti3030 TRANSISTOR b1181 MP1535A
Contextual Info: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B LINE No. H H TYPE No. ABSOiLOTE M A X . RATIING S Ä 2 5 C I I M IN . M A X Pc T 6 T T

ZT2015

Abstract: SDT1000 MHT8012 857m A400M Stc1094 1205t B170026 0805T
Contextual Info: SYMBOLS & CODES EXPLAINED 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B LINE No. H H TYPE No. ABSOiLOTE M A X . RATIING S Ä 2 5 C I I M IN . M A X Pc T 6 T T

2SC102 transistor

Abstract: 2SC102 transistor 2Sc102 1763-0625 micro transistor 1203 2SC519 2SC520 TK30556 TK30557 TK30558
Contextual Info: SY M B O L S & C O D ES E X P L A IN E D 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 1 9 GERMANIUM N PN 110. SILICON PNP 11. SILICON NPN High Power Transistors LIN E No. k I B H H TYPE No. AB SO iL O T E M AX. RATIIN G S Ä 2 5 C

B170008

Abstract: 113003 B170002 B170003 B170007 A580-0403 2n2585 B170004 SDT8111 B170005
Contextual Info: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 1 9 GERMANIUM N PN 110. SILICON PNP 11. SILICON NPN High Power Transistors LIN E No. k I B H H TYPE No. AB SO iL O T E M AX. RATIIN G S Ä 2 5 C I I MIN. M A X Pc T 6 T T

2N2128

Abstract: T4 0660 2N5577 2N5579 MD38
Contextual Info: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 1 9 GERMANIUM N PN 110. SILICON PNP 11. SILICON NPN High Power Transistors LIN E No. t * - 40°c 45°C # - 5 0 °C 6 0 °C 0 - §- k I B H H TYPE No. AB SO iL O T E M AX. RATIIN G S Ä 2 5 C

2sd150

Abstract: 2sc113 2N1841 2SC621 2SC23 2SC24 2SC437 2SC438 2SC57 PT2622
Contextual Info: SYMBOLS & CODES EXPLAINED 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B LINE No. H H TYPE No. ABSOiLOTE M A X . RATIING S Ä 2 5 C I I M IN . M A X Pc T 6 T T

2SC114 transistor

Abstract: transistor 2SC114 2SC107 PT2622 2SC114 usaf517es060m 2SC688 usaf516es048m usaf516es047m BLY87
Contextual Info: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 1 9 GERMANIUM N PN 110. SILICON PNP 11. SILICON NPN High Power Transistors LIN E No. k I B H H TYPE No. AB SO iL O T E M AX. RATIIN G S Ä 2 5 C I I MIN. M A X Pc T 6 T T

2sb504

Abstract: 2t306 2N5983 2SD588 2sd73 2sc497 HD6801V
Contextual Info: /T 1 4 R C“ 4 j r\ & M- -_ ~- i l^ it 4 4 ~\ 3 — 4 & 3 * 4 i3 !. 3: " & -\ vi- W- 4 3: - x 1 — v!r 'Hv j 4 n 3 fr 4 j •& $ 3t * 3 r^-. r+ *; 5+ x i •3I .<> iS I R k Q PS Q fit S r\ tiSE H-, 4 4 ~9> x-v r-i 5+ ' s, (vs •u- lit ZSZ\'1* n 3 St

M3911

Abstract: AWG826 molex 5578 series molex mxj 500 SD-5320-NB
Contextual Info: 5 3 4 2 NOTES 1. M A TER IA L HOUSING TERM INAL CONTACT AREA : G .F . 15Z. P B T P U L9 4 V -0 : PHOSPHOR BRONZE 2. FOR USE WITH AWG*26 & * 2 8 STRANDED WIRE (C O N SISTS OF 7 CONDUCTORS) 2.95REF, AND *2 8 SO LID W IRE. 1.14(.045) D IA. MAX. IN SU LA TIO N RIBBON C A B LE WITH

mb88515b

Abstract: MB88510B MB88518B e35r MB88516B-P-SH 88517B fujitsu DIP-42 E26-E31 pu102 MB88515B-P-SH
Contextual Info: FUJITSU Ml«!!! TM334-A871: January 1987 CMOS SINGLE CHIP 4-BIT MICROCOMPUTER WITH A/D CONVERTER AND VFD DRIVER PORT MB88514B-P-SH MB88515B-P-SH MB88516B-P-SH The Fujitsu MB88510B series CMOS single-chip 4-bit microcomputer family is a up grade version of the

mb88515b

Abstract: MB88515B-P-SH MB88516B-P-SH mb88516 MB88516B mb88514b MB88514B-P-SH e35r MB88PG51 TM334
Contextual Info: FUJITSU TM334-A871: January 1987 CMOS SINGLE CHIP 4-BIT MICROCOMPUTER WITH A/D CONVERTER AND VFD DRIVER FORT MB88514B—P—SH MB88515B—P—SH MB88516B—P-SH The Fujitsu MB88510B series CMOS single—chip 4-bit microcomputer family is a up grade version of the