SFET 310 Search Results

pv0402p

Abstract: 1002 ringer
Contextual Info: International IOR Rectifier Data Sheet No. 1.036C PV0402P Microelectronic HEXFET POW ER M O SFET PHOTOVOLTAIC RELAY P o w er ic Relay Single Pole, Normally Open + Ring Detector 0-400V, 120mA AC/DC General Description

SI9910DY

Abstract: AN705
Contextual Info: Vishay Siliconix Si9910 Adaptive Power M O SFET Driver Improves Performance in High-Voltage Half-Bridge Applications The Si9910 is the first of a new generation of “adaptive” power MOSFET gate drivers. These adaptive drivers provide

IRF720

Abstract: 1RF721 IRF723 t11g IRF721 IRF722
Contextual Info: 01 3875081 G E SOLID STATE D E ^ 3fl7SGûl ' 0 1E 18364 D D i a3bM 3 ~ T D\ T-39-11 Standard Power M O SFET s IRF720, IRF721, IRF722, IRF723 File Number 1579 Power MOS Field-Effect Transistors

crsa 58

Abstract: IRL3705N equivalent c 570 c571 C572
Contextual Info: PD - 9.1369B International IOR Rectifier IRLI3705N HEXFET Power M O SFET • • • • • • Logic-Level Gate Drive Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated

1RFZ46N

Abstract: IC 282 SD28A 1rfz46 IRFZ46N IQR9246 IRF1010 marking rur. diode BBV marking MOSFET IRFZ46N
Contextual Info: International rai Rectifier PD - 9.1277B IRFZ46N PRELIMINARY HEXFET Power M O SFET Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Vdss = 55V R o s o n = 0 . 0 2 0 Q lD = 46A Description

diode smd ed 49

Abstract: smd diode code ED JJ SMD diode a8 smd diode ED DIODE SMD A8 smd code marking A8 diode smd diode code I5 A8 JJ SMD diode diode smd marking ed st smd diode marking code
Contextual Info: PD-9.1004 International i“R Rectifier IRF624S HEXFET Power M O SFET • • • • • • • Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements V DSS= 250V

IRFZ48N equivalent

Contextual Info: International [TOR]Rectifier PD 9.1407 IRFIZ48N PRELIMINARY HEXFET Power M O SFET Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated Vdss = 55V RDS on = 0.01 6 W Id =

irf2807 equivalent

Abstract: IRF280 marking 43a IRF2807 IRFI2807 IRFI840G 5U4 rectifier E401 620pH
Contextual Info: PD-9.1662 International IOR Rectifier IRFI2807 PRELIMINARY HEXFET Power M O SFET • Advanced Process Technology • Isolated Package • High Voltage Isolation = 2.5KVRMS • Sink to Lead Creepage Dist. = 4.8mm • Fully Avalanche Rated Voss = 75V ^D S o n =

Contextual Info: PD - 9.1333C International IOR Rectifier IRLR/U3103 HEXFET Power M O SFET • Logic-Level Gate Drive • Ultra Low On-Resistance • Surface Mount IRLR3103 • Straight Lead (IRLU3103) • Advanced Process Technology • Fast Switching • Fully Avalanche Rated

st smd diode marking code

Abstract: smd marking 2t2 marking code vnq DIODE PN junction diode smd DIODE code marking Q smd marking KH marking h2t
Contextual Info: PD-9.1003 International K Rectifier IRF614S HEXFET® Power M O SFET • • • • • • • Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements V DSS = 250 V

100-C

Abstract: IRFP354 IRFPE30
Contextual Info: PD-9.995 International ii^K Rectifier IRFP354 HEXFET Pow er MO SFET • • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated Isolated Central Mounting Hole Fast Switching Ease of Paralleling Simple Drive Requirements Vpss - 450 V R DS on =

IRFI1010G

Abstract: CR 1300 SA GG21
Contextual Info: PD-9.1210 International K Rectifier IRFI1010G HEXFET® Power M O SFET • • • • • • • Advanced Process Technology Ultra Low On-Resistance Isolated Package High Voltage lsolation= 2.5KVRMS Sink to Lead Creepage Dist.= 4.8mm 175°C Operating Temperature

Contextual Info: PD - 9.1266G International I R Rectifier IRF7503 HEXFET Power MOSFET • Generation V Technology • Ultra Low On-Resistance • Dual N-Channel M O SFET • Very Small SOIC Package • Low Profile <1.1 mm • Available in Tape & Reel • Fast Switching

Contextual Info: PD-9.454D International Iksr]Rectifier IRC530 HEXFET P ow er M O SFET Dynamic dv/dt Rating Repetitive Avalanche Rated Current Sense 175°C Operating Temperature Fast Switching Ease of Paralleling Simple Drive Requirements V dss - 100V ^DS on = 0 .1 6 Í2

Z46N

Contextual Info: PD - 9.1305A International IQR Rectifier IRFZ46NS/L HEXFET Power M O SFET • Advanced Process Technology • Surface Mount IRFZ46NS • Low-profile through-hole (IRFZ46NL) • 175°C Operating Temperature • Fast Switching • Fully Avalanche Rated V dss = 5 5 V

Contextual Info: International IQR Rectifier pd-mwo > preliminary IRL6903S HEXFET Power M O SFET • Logic-Levei Gate Drive • Advanced Process Technology • Surface Mount • Fast Switching • P-Channel • Fully Avalanche Rated Voss = -30V R D S on = 0 .0 1 1Q Id = -91 A

LD-18A REGULATOR

Abstract: LD18A AH8A
Contextual Info: PD - 9.1497A International IQ R Rectifier IRLI540N PRELIMINARY HEXFET Pow er M O SFET • • • • • • Logic-Level Gate Drive Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated

Contextual Info: PD-91849D International IOR Rectifier IRF7233 HEXFET Power MOSFET • • • • Ultra Low O n-R esistance P-Channel M O SFET Surface Mount A vailable in Tape & Reel V dss = -12V RüS on = 0.020Q, Description These P-Channel MOSFETs from International Rectifier

1RFR210

Contextual Info: International [»3 Rectifier GST • IN R MÖSSHS2 D ü lS b b 4 PD-9.526C IRFR210 IRFU210 HEXFET Power M O SFET Dynamic dv/dt Rating Repetitive Avalanche Rated Surface Mount IRFR210 Straight Lead (IRFU210) Available in Tape & Reel Fast Switching Ease of Paralleling

TC1411N

Abstract: TC1412 TC1412COA TC1412CPA TC1412EOA TC1412EPA TC1412N TC1412NCOA TC1412NCPA
Contextual Info: ¡eluom ^ 2 Semiconductor, Inc. TC1412N 2A HIGH-SPEED M O SFET DRIVERS FEATURES GENERAL DESCRIPTION • The TC1412/1412N are 2A CMOS buffer/drivers. They will not latch up under any conditions within their power and voltage ratings. They are not subject to damage when up to

diode by 26E

Abstract: diagram pulsa 2N6796 DIODE ON u1E
Contextual Info: 3875081 G E SOLID STATE Dll dÎF| 3fl7SDfil DD1Û41A □ I T ’ S ?-£>? sian a a ra row er M O SFET s 2N6796 File Num ber 1594 Power MOS Field-Effect Transistors p N-Channel Enhancement-Mode Power Field-Effect Transistors

IRF9530N

Contextual Info: P D - 9.1482 International IOR Rectifier IRF9530N PRELIMINARY H E X F E # Power M O SFET • • • • • • • Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching P-Channel Fully Avalanche Rated

F0041

Abstract: IRF7314
Contextual Info: International IGR Rectifier PD - 9.1436A IRF7314 PRELIMINARY HEXFET Power M O SFET • • • • • Generation V Technology Ultra Low On-Resistance Dual P-Channel MOSFET Surface Mount Fully Avalanche Rated V DSS = -20V ^DS on = 0.0580 Description Fifth Generation HEXFETsfrom international Rectifier

IRL640

Abstract: IRF1010 IRL640A 91089
Contextual Info: PD-9.1089 International H ü Rectifier IRL640 HEXFET Power M O SFET • • • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated Logic-Level Gate Drive RDS on Specified at V gs =4V & 5V Fast Switching Ease of Paralleling Simple Drive Requirements