SF TRANSISTOR Search Results

SF 829 B

Abstract: SF829 SF819 SF827 sf 829 d SF126 SF826 sf829c SF816 SF 827 d
Contextual Info: FUNKAMATEUR-Bauelementemformation Silizium-npn-Transistoren in Epitaxie-Planar-Technologie SF 826 SF827 SF 828 SF 829 Hersteller: V EB Halbleiterwerk Frankfurt Oder TG L 43386 Kurzcharakteristik Grenzwerte (im Betriebstemperaturbereich) Parameter (Bedingungen)

sefuse d6x

Abstract: SEFUSE d6y SEFUSE SEFUSE SF214E SEFUSE SF240E SEFUSE SF129E SFH162E SFH124E SF 127c SFH109E
Contextual Info: Limitor GmbH NEC/Schott SEFUSE thermal cutoffs Components for temperature, current & time SF/E series SF/K series RoHS*conform since april 2003 SF/E series measures 4.2mm in body diameter and is VDE approved 10A + 15A at AC250V part no. Tf / TF Thermal cutoffs are

SEFUSE SF240E

Abstract: SEFUSE SF214E sefuse d6x SEFUSE d6y SM125A0 SF240E SF113E SEFUSE SF129E SF214E nec d6x
Contextual Info: Limitor GmbH NEC/Schott SEFUSE thermal cutoffs Components for temperature, current & time SF/E series SF/K series RoHS*compliant since april 2003 SF/E series measures 4.2mm in body diameter and is VDE approved 10A + 15A at AC250V part no. Tf / TF Thermal cutoffs are

700-HN116

Abstract: 700-HN114 700-HN103 199-DR1 HN-11 DPDT relay 6v ac ssr DPDT relay 48v iT 700 Varistor 240v
Contextual Info: Bulletin 700-SF Solid-State Relays Overview/Product Selection Bulletin 700-SF Table Of Contents • • • • • • Product Selection . . . . . . . 47 Accessories . . . . . . . . . . . . 48 Specifications . . . . . . . . . . 49 Approximate Dimensions . . . . . . . . . . . . 50

DIODO S04

Abstract: DIODO RU 30 A DIODO SIEMENS RU75 sfh600-2 siemens 22 DIODO AN 5218 diode S6 SMA diodo jb
Contextual Info: SIEMENS SFH600 SERIES TRIOS * PHOTOTRAÑSISTOR OPTOCOUPLER FEA TU RES * High Current Tran sfer Ratios SF H 6 0 0 -0 ,40 to 80% SF H 6 0 0 -1 ,63 to 125% SF H 6 0 0 -2 ,100 to 200% S F H 600-3,160 to 320% * W ithstand T e st Voftage 1 Minute , 5300 V * v CEs«t 0.25 (S0.4) V, lF = 10 mA, lc = 2.5 mA

1E14

Abstract: 2E12 FSGYC164D1 FSGYC164R4 Rad Hard in Fairchild for MOSFET
Contextual Info: FSGYC164R Data Sheet Radiation Hardened, SEGR Resistant N-Channel Power MOSFET itle GY 64R bjec diat den GR ista Cha l wer SF tho yw s diat den GR ista Cha l wer SF rchi Fairchild Star*Power Rad Hard MOSFETs have been specifically developed for high performance

1E14

Abstract: 2E12 FSGJ164D1 FSGJ164R3 FSGJ164R4 Rad Hard in Fairchild for MOSFET
Contextual Info: FSGJ164R Data Sheet Radiation Hardened, SEGR Resistant N-Channel Power MOSFET itle GJ R bjec diat den GR ista Cha l wer SF tho yw s diat den GR ista Cha l wer SF rchi Fairchild Star*Power Rad Hard MOSFETs have been specifically developed for high performance

1E14

Abstract: 2E12 FSPJ264D1 FSPJ264F FSPJ264R Rad Hard in Fairchild for MOSFET
Contextual Info: FSPJ264R, FSPJ264F Data Sheet Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs itle PJ2 R, PJ2 bje dia de , GR ista Cha l wer SF ) tho yw s dia de , GR ista Cha l wer SF , rchi Fairchild Star*Power Rad Hard MOSFETs have been specifically developed for high performance

1E14

Abstract: 2E12 FSPJ164D1 FSPJ164R3
Contextual Info: FSPJ164R, FSPJ164F Data Sheet Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs itle PJ1 R, PJ1 bjec diat den GR ista Cha l wer SF ) tho yw s diat den GR ista Cha l wer SF , rchi Fairchild Star*Power Rad Hard MOSFETs have been specifically developed for high performance

1E14

Abstract: 2E12 FSPYC264D1 FSPYC264F FSPYC264R FSPYC264R3
Contextual Info: FSPYC264R, FSPYC264F Data Sheet June 2001 2001 Fairchild Semiconductor Corporation Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs itle PY 64R PY 64F bjec diat den GR ista Cha l wer SF tho yw s diat den GR ista Cha l wer SF , rchi Fairchild Star*Power Rad Hard

TP218 transistor

Abstract: XFMR1 671-8262 XFMR1 transformer 1458 opto k56 transistor smd MIDCOM 671-8262 TP1600 4DF3-836 TP218 IC
Contextual Info: SocketModem SF Series Designer's Guide Preliminary Order No. 1158 October 28, 1997 SocketModem SF Series Designer’s Guide NOTICE Information furnished by Rockwell International Corporation is believed to be accurate and reliable. However, no responsibility is assumed by Rockwell International for its use, nor any infringement of patents or other rights of third parties

SF4-DC24V

Abstract: scr arc welding control schematic SF2-DC24V ULTRASONIC GENERATOR OF PLASTIC welding machine circuit diagram LR26550 SF2-DC12V SF2-DC48V SF2-DC60V SF4-DC12V SF4-DC48V
Contextual Info: SF POLARISED, MONOSTABLE SAFETY RELAY UL File No.: E43149 CSA File No.: LR26550 25.0 .984 53.3±0.5 2.098±.020 16.5±0.5 .650±.020 53.3±0.5 2.098±.020 SF-RELAYS • Forced operation contacts 2 Form A 2 Form B N.O. side and N.C. side contacts are connected through a card so that one

RCA9229D

Abstract: RCA9228D ACS 0865 rca 9228 d RCA9228A RCA9228B RCA9228C RCA9229A RCA9229B RCA9229C
Contextual Info: 3875081 G E SOLID SfÄTE 01E 17323 D Darlington Power Transistors File Number 1448 RCA9228A, RCA9228B, RCA9228C, RCA9228D RCA9229A, RCA9229B, RCA9229C, RCA9229D 50-A C om plem entary High Current,

2N5372

Abstract: 2N5369 2N5373 2N5368 2N5370 2N5371 2N5374 2N5375 2N5568 NPN, PNP for 500ma, 30v
Contextual Info: 2N 5368 through 2N 5375 ^1 COMPLEMENTARY SILICON GENERAL PURPOSE AMPLIFIERS AND SWITCHES _ ;SF A THE ABOVE TYPES ARE SILICON PLANAR EPITAXIAL TRANSISTORS FOR GENERAL PURPOSE AMPLIFIERS AND MEDIUM SPEED SWITCHING APPLICATIONS. CASE TO-92F CEB 2N 5368 ffPN

Contextual Info: Philips Semiconductors Product specification Silicon Diffused Power Transistor BUÜ403A GENERAL DESCRIPTION High-voltage, high-sf>eed planar-passivated npn power switching transistor in T0220AB envelope intended for use in electronic HF/OH lighting ballast applications, converters, inverters, switching regulators, motor control systems,

bsim3v3

Abstract: C08p
Contextual Info: 0.7µ µm 13.5V CMOS Process ID: SE/SF [C08p] Applications Main Process Flow • High voltage interface to mixed signal • P Substrate circuits, e.g: LCD display drivers, Power • Twin Wells

GT50J102

Contextual Info: GT50J102 TOSHIBA TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT G T 5 0 J 1 02 Unit in mm HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. • • • .sf. The 3rd. Generation. Enhancement-Mode. High Speed. : tf= 0.30,«s Max.

uhf linear amplifier module MAV-11

Abstract: mini circuits 15542 zhl 1042j mini circuits 15542 zem-4300 VCO MCL POS-1060 ups circuit schematic diagram 1000w 15542 ZAPD-2 MINI-CIRCUIT 15542 model no zhl-1-2w mcl sbl-1 MIXER mini circuits 15542 ZFM sim 900A
Contextual Info: IF RF MICROWAVE COMPONENTS GUIDE TM SF/2010 finds the model you need, Instantly. For pricing / availability, complete specifications, data sheets, RoHS compatibility, performance data /curves, pcb layouts, drawings shopping online, see minicircuits.com

Contextual Info: 9- 3 / 7 ^3 F 6 - 25 R 06 KF EUPEC J> SEE GGGG272 Sf lf l «UPEC Thermische Eigenschaften Thermal pnoperties Rthjc DC, pro Baustein /p er module 0,21 °C/W Transistor Transistor Elektrische Eigenschaften Electrical properties Höchstzulässige Werte Maximum rated values

Contextual Info: 569 FIBER SENSORS Small Light Curtain Type 4 SF4-AH SERIES • General terms and conditions. P.1 ■ Glossary of terms. P.983~ Related Information ■ SF-AC . P.588 ■ General precautions . P.986~

Transistor MARKING CODE AW SOT89

Abstract: Transistor marking 0.5 sot-89 MARKING CODE 4A transistors 2sd 2SD2153 T100 Transistor MARKING CODE AW SOT-89 oc sc62
Contextual Info: 2SD2153 Transistor, NPN Features Dimensions Units : mm • available in MPT3 (MPT, SOT-89, SC-62) package • package marking: 2SD2153; DIM-*, where ★ is hFE code 2SD2153 (MPT3) 1.6 * 0 1 ?T. zH . it sf • excellent current-to-gain characteristics • low collector saturation voltage,

"Philips Semiconductors" BAX DO-35

Abstract: B2V86-2V0 b2v86 BZV87-3V24 ba315 BA220
Contextual Info: Philips Semiconductors Concise Catalogue 1996 SMALL-SIGNAL TRANSISTORS & DIODES & MEDIUM-POWER RECTIFIERS Small-signal diodes LOW-VOLTAGE STABISTORS OVERVIEW VF typ. V 1 mA 5 mA at lF: Vr V RRM ' frm 10 mA max. max. max. sF typ. rdiH max. (V) (V) (mA) (mV/K)

Microcontroller Handbook

Abstract: power amplifier 3000W with PCB
Contextual Info: Beratung und Vertrieb: SF/2010 IF RF MICROWAVE COMPONENTS GUIDE TM finds the model you need, Instantly. For pricing / availability, complete specifications, data sheets, RoHS compatibility, performance data /curves, pcb layouts, drawings shopping online, see minicircuits.com

7A SF SC 30

Contextual Info: T O SH IB A 2SJ304 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE L2- tt-M O SF i <; i 3 n d HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS. DC-DC CONVERTER, RELAY DRIVE AND MOTOR DRIVE APPLICATIONS. INDUSTRIAL APPLICATIONS U nit in mm 10 + 0.3