2NS604
Abstract: 2NS540 2NS154 SD716 SDT13305 2N5671 2N5005 SDT425 SDT7605 SDT96302
Contextual Info: -Jfolìtron P L A N A R P O W E R T R A N S IS T O R S Devices. Inc H DEVICE TYPE VCEO V hFE MIN/MAX 2N2387 2N2988 2N2S89 2N2990 2N2991 80 100 80 100 80 2N2992 2N2993 2N2994 2N3439 2N3440 ÎA M W P K M ic (A) PT MAX (W) CASE TYPE CHIP TYPE ic (A) 25/75 25/75
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2n23872n29882n2s892n2990+162n29912n29922n29932n29942n34392n34402ns6042ns5402ns154sd716sdt133052n56712n5005sdt425sdt7605sdt96302
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solitron transistors
Abstract: 2N3782
Contextual Info: SOLITRON DEVICES INC i 8368602 hi SOLITRON DEVICES INÇ_. DE~| û3bfitDE DODDTSt. 0 | ~ _6 1 C POWER TRANSISTORS 2N3782 00956 T~ J 7 PNP SILICON POWER TRANSISTORS MEDIUM POWER 3 AMPERES FEATURES . HIGH RELIABILITY, M EDIU M POWER PLANAR CONSTRUCTION
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2n3782-200m200masdt69501+2sdt69503solitron transistors
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SDT69504
Abstract: 2N3740 2N3741 2N4387 2N4388 2N4999 2N5001 2N5147 2N5149 2N5333
Contextual Info: Device Type 2N3740 2N3741 2N4387 2N4388 2N4999 2N5001 2N5147 2N5149 2N5333 2N5597 SDT3501 SDT3502 SDT3503 SDT3504 SDT3505 SDT3506 SDT3507 SDT3508 SDT3509 SDT3510 SDT3511 SDT3512 SDT3513 SDT3514 SDT3515 SDT3516 SDT3550 SDT3551 SDT3552 SDT3553 SDT3554 SDF3575
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2n37402n37412n43872n4388+72n49992n50012n51472n51492n53332n5597sdt69504
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SDT423
Abstract: 2N3021 2N5076 2N5666 SDT5055 2N2150 2N2151 2N3788 2N3917 2N3918
Contextual Info: m |p tu)©Tr ©Aim ® i_ B-2 VCE sat) @ MAX (V) ic (A) IT MIN (MHz) Pj MAX (W) CASE TYPE CHIP TYPE 2N2150 2N2I51 2N3788 2N3917 2N3918 80 80 325 40 40 20/60 40/120 20/180 30/120 100/300 1.0 1.0 0.5 1.0 1.0 1.25 1.25 1.00 1.20 1.20 1.0 1.0 1.5 1.0 1.0
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2n2150o-1112n21512n3788+102n39172n39182n43002n48622n4863sdt4232n30212n50762n5666sdt5055
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