SDT69504
Abstract: 2N3740 2N3741 2N4387 2N4388 2N4999 2N5001 2N5147 2N5149 2N5333
Contextual Info: Device Type 2N3740 2N3741 2N4387 2N4388 2N4999 2N5001 2N5147 2N5149 2N5333 2N5597 SDT3501 SDT3502 SDT3503 SDT3504 SDT3505 SDT3506 SDT3507 SDT3508 SDT3509 SDT3510 SDT3511 SDT3512 SDT3513 SDT3514 SDT3515 SDT3516 SDT3550 SDT3551 SDT3552 SDT3553 SDT3554 SDF3575
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2n37402n37412n43872n4388+72n49992n50012n51472n51492n53332n5597sdt69504
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2NS604
Abstract: 2NS540 2NS154 SD716 SDT13305 2N5671 2N5005 SDT425 SDT7605 SDT96302
Contextual Info: -Jfolìtron P L A N A R P O W E R T R A N S IS T O R S Devices. Inc H DEVICE TYPE VCEO V hFE MIN/MAX 2N2387 2N2988 2N2S89 2N2990 2N2991 80 100 80 100 80 2N2992 2N2993 2N2994 2N3439 2N3440 ÎA M W P K M ic (A) PT MAX (W) CASE TYPE CHIP TYPE ic (A) 25/75 25/75
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2n23872n29882n2s892n2990+162n29912n29922n29932n29942n34392n34402ns6042ns5402ns154sd716sdt133052n56712n5005sdt425sdt7605sdt96302
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2N438b
Abstract: 2N1702 2N3782 2N4234 2N4235 2N4236 2N4387 2N4388 2N4898 2N4899
Contextual Info: 15 SILICON POWER TRANSISTORS S A T U R A T IO f SI VO LTAG ES CUR REIN T G A IN TYPE NUMBER CASE TYPE V CBO V o < m O @> V EBO V h F I: M IN . I M A X . vCE @ 'c V A *C A VCE s VBE(s) V , V *B A 2 AMP SILICON P MP Observe (— ) Negative P olarity 2N3782
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2n37822n42342n42352n4236+82n43872n43882n48982n48992n4900sdt35012n438b2n1702
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Germanium drift transistor
Abstract: 2N4895 germanium transistor epitaxial mesa transistor sec tip31A halbleiter index transistor transistor BD222 BD699 EQUIVALENT kd 2060 transistor
Contextual Info: POWER DATA BOOK FAIRCHILD 464 Ellis Street, Mountain View, California 94042 1976 Fairchild Camera and Instrum ent C orporation/464 Ellis Street, M ountain View, California 940 4 2 / 4 15 9 6 2 -5 0 1 1/TW X 910 -3 7 9-6 4 3 5 INTRODUCTION You, the customer, and your needs have dictated the form at and contents of
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orporation/464ch-8105germanium drift transistor2n4895+7germanium transistorepitaxial mesatransistor sec tip31ahalbleiter index transistortransistor bd222bd699 equivalentkd 2060 transistor
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SDT423
Abstract: 2N3021 2N5076 2N5666 SDT5055 2N2150 2N2151 2N3788 2N3917 2N3918
Contextual Info: m |p tu)©Tr ©Aim ® i_ B-2 VCE sat) @ MAX (V) ic (A) IT MIN (MHz) Pj MAX (W) CASE TYPE CHIP TYPE 2N2150 2N2I51 2N3788 2N3917 2N3918 80 80 325 40 40 20/60 40/120 20/180 30/120 100/300 1.0 1.0 0.5 1.0 1.0 1.25 1.25 1.00 1.20 1.20 1.0 1.0 1.5 1.0 1.0
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2n2150o-1112n21512n3788+102n39172n39182n43002n48622n4863sdt4232n30212n50762n5666sdt5055
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ksd 302 250v, 10a
Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
Contextual Info: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle
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cb-f36c2sd16422sd21822sc4489+11-08s-ksd 302 250v, 10airf 5630transistor 2sb 367irf 3055ac153ytransistor esm 2878tip 43c transistor2sk116bf199bd643
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