ic tea 1090
Abstract: M/ic rca 645 TEA 1090
Contextual Info: SGS-THOMSON 5 7 . MD@Bi ilLim©ISID©i SD 1542-42 RF & MICROWAVE TR AN SISTO R S AVIONICS APPLICATIONS . DESIGNED FOR HIGH POWER PULSED IFF • 600 WATTS min. IFF 1030 or 1090 MHz . REFRACTORY GOLD METALLIZATION ■ 6.0 dB MIN. GAIN . LOW THERMAL RESISTANCE FOR
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MRF648
Abstract: TPV3100 2SC2897 macom TP3034 SD1393 TP3008 tp9383 transistor 2sC636 MRF255 equivalent
Contextual Info: Cross References June 1999 RF PRODUCTS P/N CROSS REFERENCE VENDOR NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC
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2n59442n59452n59462n6082+162n60842n64392sc12572sc12582sc12592sc1605amrf648tpv31002sc2897macomtp3034sd1393tp3008tp9383transistor 2sc636mrf255 equivalent
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SO42
Abstract: STM 160-30 "class AB Linear" hf PD55003 equivalent SD57045 linear amplifier 470-860 LT5232 VHF lna 30 to SD4100 SD2932 linear amplifier
Contextual Info: RF Selection Guide STM i c r o e l e c t r o n i c s More Intelligent Solutions RF LDMOS HF to 1000 MHz Class AB Common Source - PowerSO-10RF VHF/UHF Mobile Radio and 900 MHz Cellular Applications P/N PD54003 PD54008 PD55003 PD55008 PD55015 PD55025S PD57002
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powerso-10rfpd54003pd54008pd55003+16pd55008pd55015pd55025spd57002pd57006pd57018so42stm 160-30class ab linear" hfpd55003 equivalentsd57045linear amplifier 470-860lt5232vhf lna 30 tosd4100sd2932 linear amplifier
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SD1542-42
Abstract: SD1542
Contextual Info: ASI SD1542-42 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .400 X 500 2L FLG The ASI SD1542-42 is a Common Base Device Designed for, IFF and DME Pulse Applications. FEATURES INCLUDE: • Gold Metalization • Input/Output Matching • Hermetically Sealed
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SD8250
Abstract: S068 MSC81325M SD1528-06 MSC81600M
Contextual Info: SILICON POWER TRANSISTORS AVIONICS TRANSISTORS SGS-THOMSON offers the broadest variety of product in the industry specifically characterized for avionics applications. Devices are grouped according to frequency range of application and are available in several package
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msc1000mmsc1000mpmsc1004mmsc1004mp+10sd1528-06sd1528-08msc81035mmsc81035mpsd1530-01sd1530-08sd8250s068msc81325mmsc81600m
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Contextual Info: ASI SD1542-42 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .400 X 500 2L FLG The ASI SD1542-42 is a Common Base Device Designed for, IFF and DME Pulse Applications. FEATURES INCLUDE: • Gold Metalization • Input/Output Matching • Hermetically Sealed
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transistor 5cw
Abstract: transistor 5cw 61 sd1466 transistor 6cw TRANSISTOR REPLACEMENT GUIDE 6CW transistor MS3016 transistor selection guide PH1516-2 STM1645-10
Contextual Info: Richardson Electronics 800-737-6937 www.rfpowernet.com RF POWER TRANSISTOR SELECTION GUIDE August 2000 Table of Contents Preface Supplier - Product Matrix Tab Page HF VHF UHF VHF-UHF TV LINEAR General Purpose Cellular, GSM, Paging PCS, DCS, WLL 3G, WCDMA, UMTS, CDMA2000
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cdma20002n6084blv102ca5815cs+15d1020uklf2810amrf175lvmsc75652ph1600-7sd1466transistor 5cwtransistor 5cw 61transistor 6cwtransistor replacement guide6cw transistorms3016transistor selection guideph1516-2stm1645-10
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SD1528-06
Abstract: MSC81600M MSC1000M MSC1000MP MSC1004M MSC1004MP MSC81035M MSC81035MP SD1528-08 SD1530-01
Contextual Info: SILICON POWER TRANSISTORS AVIONICS TRANSISTORS SGS-THOMSON offers the broadest variety of product in the industry specifically characterized for avionics applications. Devices are grouped according to frequency range of application and are available in several package
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msc1000mmsc1000mpmsc1004mam80912-005+11am80912-015am80912-030am80912-085am0912-150sd1528-06msc81600mmsc1004mpmsc81035mmsc81035mpsd1528-08sd1530-01
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SD1446
Abstract: SD2910 philips blx15 BLV36 BLW60C st cross reference blw97 SD4575 BLV103 MX0912B350Y
Contextual Info: June 1999 ST CROSS REFERENCE WITH PHILIPS INDUSTRY PART NUMBER BGY916 BLF145 BLF175 BLF177 BLF242 BLF244 BLF245 BLF245B BLF248 BLF278 BLF348 BLF368 BLF378 BLF548 BLU10/12 BLU20/12 BLU30/12 BLU30/28 BLU45/12 BLU60/12 BLU60/28 BLU97 BLU99 BLV12 BLV13 BLV30 BLV31
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bgy916blf145blf175blf177+16blf242blf244blf245blf245bblf248blf278sd1446sd2910philips blx15blv36blw60cst cross referenceblw97sd4575blv103mx0912b350y
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SO42
Abstract: sd1393 Transistor amplifier SD1393 SD1470 sd1393 01 sd2931 fm SD57045 LT5232 sd1446 SD4100
Contextual Info: Selection Guide April 2000 VHF/UHF and 900 MHz Cellular Applications TYPE FREQ. MHz POUT (W) Gain min. (dB) Vcc (V) Class (%) Efficiency (°C/W) RTHj-c PD54003 PD54008 PD55003* PD55008 PD55015 PD57002* PD57006* PD57018 PD57030S PD57045S 520 520 520 520 520
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pd54003pd54008pd55003pd55008+16pd55015pd57002pd57006pd57018pd57030spd57045sso42sd1393transistor amplifier sd1393sd1470sd1393 01sd2931 fmsd57045lt5232sd1446sd4100
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UJ300
Abstract: DFCA
Contextual Info: /^ 37 /T SGS-THOMSON R SD1542-42 RF & MICROWAVE TRANSISTO RS AVIONICS APPLICATIONS • DESIGNED FOR HIGH POWER PULSED IFF ■ 600 WATTS min. IFF 1030 or 1 090 MHz ■ REFRACTORY GOLD METALLIZATION . 6.0 dB MIN. GAIN ■ LOW THERMAL RESISTANCE FOR RELIABILITY AND RUGGEDNESS
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SD1542-42
Abstract: M112 SD1542
Contextual Info: SD1542-42 RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS . . . . . DESIGNED FOR HIGH POWER PULSED IFF 600 WATTS min. IFF 1030 or 1090 MHz REFRACTORY GOLD METALLIZATION 6.0 dB MIN. GAIN LOW THERMAL RESISTANCE FOR RELIABILITY AND RUGGEDNESS 30:1 LOAD VSWR CAPABILITY AT
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TPV3100
Abstract: TP3024A HF power amplifier TPV3100 PT9783 MRF466 mrf4070 tp9383 tp2304 mrf433 MRF492A
Contextual Info: TABLE OF CONTENTS INTRODUCTION iii GENERAL INFORMATION iv QUALITY ASSURANCE & RELIABILITY v PRODUCT INDEX Alphanumeric vi RF POWER TRANSISTORS ! ! ! ! ! ! ! ! ! ! ! HF SSB HF MOSFETS VHF VHF & UHF MOSFETS UHF UHF MILITARY PULSED AVIONICS PULSED RADAR CW MICROWAVE
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twf150-50fhf150-50shf250-50hf100-28+16hf220-28hf220-50tvu014hf75-50sasat25asi4003tpv3100tp3024ahf power amplifier tpv3100pt9783mrf466mrf4070tp9383tp2304mrf433mrf492a
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SD1542-42
Abstract: 5002l
Contextual Info: ASI SD1542-42 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .400 X 500 2L FLG The ASI SD1542-42 is a Common Base Device Designed for, IFF and DME Pulse Applications. FEATURES INCLUDE: • Gold Metalization • Input/Output Matching • Hermetically Sealed
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SD1542-42
Abstract: M112 SO 42 P
Contextual Info: SD1542-42 RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS . . . . . DESIGNED FOR HIGH POWER PULSED IFF 600 WATTS min. IFF 1030 or 1090 MHz REFRACTORY GOLD METALLIZATION 6.0 dB MIN. GAIN LOW THERMAL RESISTANCE FOR RELIABILITY AND RUGGEDNESS 30:1 LOAD VSWR CAPABILITY AT
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