SD122 Search Results

Contextual Info: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 SD1224 RF AND MICROWAVE TRANSISTORS VHF FM APPLICATIONS Features • • • • • • • 175 MHz 28 Volts Class C Common Emitter Efficiency 60% Min. POUT = 40 W Min.

118-136 mhz

Abstract: sd1222-6 transistor rf vhf
Contextual Info: S G S'•TH O M SO N QSC I 7=1^237 D G Q G 17E 3 SOLID STATE MICROWAVE SD1222-6 JHOMSON-CSF COMPONENTS CORPORATION Montgomeryville, PA 18936« 215 362-8500 • TWX 510-661-7299 15 W, 28 V VHF POWER TRANSISTOR DESCRIPTION SSM device type SD 1222-6 is an epitaxial silicon NPN-planar transistor

B905

Abstract: SD1220 2SB905
Contextual Info: 2SB905 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SB905 Power Amplifier Applications • Unit: mm Complementary to SD1220 Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO −150 V Collector-emitter voltage

B905

Abstract: SD1220 2SB905
Contextual Info: 2SB905 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SB905 Power Amplifier Applications • Unit: mm Complementary to SD1220 Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO −150 V Collector-emitter voltage

Contextual Info: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 SD1224 RF AND MICROWAVE TRANSISTORS VHF FM APPLICATIONS Features • • • • • • • 175 MHz 28 VOLTS CLASS C COMMON EMITTER EFFICIENCY 60% MIN. POUT = 40 W MIN.

SD1222-5

Abstract: IC 785 SD1222
Contextual Info: SD1222-5 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI SD1222-5 is a transistor designed primarily for 12.5 V AM Class-C amplifiers in the118-136 MHz band and 28 V Class-C RF amplifiers in ground stations. PACKAGE STYLE .380 4L FLG B .112 x 45° FEATURES:

Contextual Info: SD1224-02 RF AND MICROWAVE TRANSISTORS VHF FM APPLICATIONS • • • • • • • 175 MHz 28 VOLTS CLASS C COMMON EMITTER EFFICIENCY 60% MIN. POUT = 40 W MIN. GP = 7.6 dB GAIN DESCRIPTION: The SD1224-02 is an epitaxial silicon NPN planar transistor designed

Contextual Info: r z T S G S - T H O M S O N * 7# . M M ilUl gffM D(ei_ SD1224-02 RF & MICROWAVE TR AN SISTO R S VHF APPLICATIONS • 175 MHz ■ 28 VOLTS . EFFICIENCY 60% ■ COMMON EMITTER . GOLD METALLIZATION ■ P out = 40 W MIN. WITH 7.6 dB GAIN PIN CONNECTION

SD1220

Abstract: SD1220-1 118-136 mhz vhf fm amplifier
Contextual Info: iD J D MICROwWVVEWSS? S-THOMSON d 4c d SOLID 1 ' o a o o i o f l s -¡r- JS- Û7 SD1220-1 THOMSON-CSF COMPONENTS CORPORATION v / i Montgorneryviilg, PA 1¡8936 • 215 362-8500 ■. TVVX 510-66 1-7299 VHF COMMUNICATIONS TRANSISTOR DESCRIPTION The SD1220-1 is an epitaxial silicon NPN-planar transistor designed

M113

Abstract: SD1224-10
Contextual Info: SD1224-10 RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS . . . 30 MHz 28 VOLTS IMD −28 dB COMMON EMITTER GOLD METALLIZATION P OUT = 30 W MIN. WITH 18 dB GAIN .380 4LFL M113 epoxy sealed ORDER CODE SD1224-10 BRANDING 1224-10 PIN CONNECTION DESCRIPTION

118-136 mhz

Abstract: THOMSON-CSF, RF TRANSISTOR RF Amplifiers Thomson-CSF amplifier
Contextual Info: S G S-THOMSON OMC D | 7 ^ 2 3 7 OOaOlll 5 D T ~ ?-*f SOLID STATE MICROWAVE SD1224-2 i THOMSON-CSF COMPONENTS CORPORATION I Montgomeryville, PA 18936• 215 362-8500■ TWX 510-661-7299 _ . ' _; VHF COMMUNICATIONS TRANSISTOR DESCRIPTION The SD1224-2 is an epitaxial silicon NPN-planar transistor designed

Contextual Info: SGS-THOMSON SD1224-10 m RF & MICROWAVE TRANSISTO RS HF SSB APPLICATIONS 30 MHz 28 VOLTS IMD -2 8 dB COMMON EMITTER GOLD METALLIZATION P OUT = 30 W MIN. WITH 18 dB GAIN PIN CONNECTION 4/ 1 \ Q A DESCRIPTION The SD1224-10 is a 28 V epitaxial silicon NPN planar transistor designed primarily for SSB com­

SD1220

Abstract: 2SB905 B905
Contextual Info: 2SB905 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SB905 Power Amplifier Applications • Unit: mm Complementary to SD1220 Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO −150 V Collector-emitter voltage

Contextual Info: SD1224 RF PRODUCTS RF & MICROWAVE TRANSISTORS DIVISION P RODUCT P REVIEW DESCRIPTION KEY FEATURES IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com ! ! ! ! ! ! ! W W W . Microsemi .COM The SD1224 is an epitaxial silicon NPN planar transistor designed

Contextual Info: 2SB905 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SB905 Power Amplifier Applications • Unit: mm Complementary to SD1220 Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO −150 V Collector-emitter voltage

SD1224-10

Abstract: M113
Contextual Info: SD1224-10 RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS . . . 30 MHz 28 VOLTS IMD −28 dB COMMON EMITTER GOLD METALLIZATION POUT = 30 W MIN. WITH 18 dB GAIN .380 4LFL M113 epoxy sealed ORDER CODE SD1224-10 BRANDING 1224-10 PIN CONNECTION DESCRIPTION

SD1224-02

Contextual Info: SD1224-02 RF AND MICROWAVE TRANSISTORS VHF FM APPLICATIONS Features • • • • • • • 175 MHz 28 VOLTS CLASS C COMMON EMITTER EFFICIENCY 60% MIN. POUT = 40 W MIN. GP = 7.6 dB GAIN DESCRIPTION: The SD1224-02 is an epitaxial silicon NPN planar transistor designed

SD1229-1

Abstract: RF NPN POWER TRANSISTOR 1000 WATT 2 watt carbon resistor THOMSON-CSF, RF TRANSISTOR
Contextual Info: S G S-THOMSON G4C 0 I 7=12=1237 0 0 0 0 0 4 1 T 1~ ' D T ^S3 - / / SOLID STATE MICRUWAVE SD1229-1 THOMSON-CSF COMPONENTS CORPORATION î Montgorrieryville, P A 18936 * Ï215 362-8500 • TWX 510-661-7299 VHF COMMUNICATIONS TRANSISTOR .230 .320 DESCRIPTION

2N5643

Abstract: 605Z OB65
Contextual Info: SGS-1H0MS0N ¡UKgTMDiS SD1224 2N5643 RF & MICROWAVE TRANSISTORS VHF FM APPLICATIONS . 175 MHz . 28 VOLTS > CLASS C . COMMON EMITTER . EFFICIENCY 60% MIN • P out = 40 W MIN. WITH 7.6 dB GAIN .380 4L STUD (M135) epoxy sealed ORDER CODE BRANDING SD1224 2N5643

Contextual Info: 2SB905 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SB905 Power Amplifier Applications • Unit: mm Complementary to SD1220 Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO −150 V Collector-emitter voltage

SD1224

Contextual Info: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 SD1224 RF AND MICROWAVE TRANSISTORS VHF FM APPLICATIONS Features • • • • • • • 175 MHz 28 VOLTS CLASS C COMMON EMITTER EFFICIENCY 60% MIN. POUT = 40 W MIN.

transistor

Abstract: 2sb1240 2SD1189F SD1227 2SB822 2SB1277 2SB1182 transistor 2SB1240 silicon pnp transistor transistor 2A
Contextual Info: Transistors Medium power Transistor *32V,*2A 2SB1188 / 2SB1182 / 2SB1240 / 2SB822 / 2SB1277 / 2SB911M FFeatures 1) Low VCE(sat). VCE(sat) = *0.5V (Typ.) (IC / IB = *2A / *0.2A) 2) Complements the 2SD1766 / 2SD1758 / 2SD1862 / 2SD1189F / 2SD1055 / 2SD1919 / SD1227M.

b905

Abstract: SD1220 2SB905
Contextual Info: 2SB905 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SB905 Power Amplifier Applications • Unit: mm Complementary to SD1220 Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO −150 V Collector-emitter voltage

SD1220

Abstract: 2SB905 B905
Contextual Info: 2SB905 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SB905 Power Amplifier Applications • Unit: mm Complementary to SD1220 Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO −150 V Collector-emitter voltage