SD112 Search Results

SD1012-09

Abstract: SD1072 T5400 SD1273 SD1098-03
Contextual Info: RF NPN Power Transistors Part Number Microsemi Division Package Outline • SD1483 SD1015 SD1013 SD1013-03 SD1019 SD1019-05 SD1441 SD1273 SD1012 SD1012-09 SD1166 SD1127 SD1012-03 SD1143 SD1143-01 SD1013-09 SD1062 SD1272 SD1272-02 SD1014-02 SD1014-06 SD1070

SD112-45-11-221

Contextual Info: SD112-45-11-221 Si Photodetector with High Gain Amplifier The SD112-45-11-221 features an ultra low dark current photodiode integrated with a high gain transimpedance amplifier in a hermetic TO-5 package. The amplifier has a typical input bias current of 10 fA resulting in

JR 3610

Abstract: 4080M3
Contextual Info: TELEDYNE COMPONENTS m eöE D öTl TbQ S ÜOGbms T _ ü r - j j t - z- ^ SD1122 SEMICONDUCTOR_ N-CHANNEL ENHANCEMENT-MODE HIGH-VOLTAGE D-MOS POWER FETS ORDERING INFORMATION Sorted Chips in Waffle Pack TO-226AA TO-92 Pda-Lead Formed

SD1127

Abstract: Arco 315 arco 402
Contextual Info: H MS _r~>_arm/m S IV U C r U S e m i P ro g re s s P o w e re d b y T ec h no log y 140 C o m m erc e Drive n i i v i M o n tg o m eryville , IPA 18936-1013 Tel: 215 63 1-9 840 •■■vsI l i u w i i i b i y v i i i b , ^ . . «-> _ SD1127 RF & MICROWAVE TRANSISTORS

SD112-46-11-221

Contextual Info: SD112-46-11-221 Si Photodetector with Low Voltage Single Supply High Gain Low Offset Amplifier • • • • • Large active area High sensitivity Low noise Low output offset Hermetically sealed The SD112-46-11-221 features an ultra low dark current photodiode

SD1127

Abstract: SD1127BD SD1127CHP
Contextual Info: TOPAZ SEMICONDUCTOR DSE I l o a s s a t OOOIOMO 1 r - 3 S '-c? S ' - I — SD1127 SEMICONDUCTOR N-CHANNEL ENHÂ^CEI^E^Î-^ODE VERTICAL D-MOS FE7 ULTRA LOW-LEAKA@E ORDERING INFORMATION SD1127BD TO-226AA TO-92 Plastic Package SD1127CHP Sorted Chips In Waffle Pack

SD112-46-11-221

Contextual Info: SD112-46-11-221 HDWXUHV Si Photodetector with Low Voltage Single Supply High Gain Low Offset Amplifier • • • • • Large active area High sensitivity Low noise Low output offset Hermetically sealed The SD112-46-11-221 features an ultra low dark current photodiode

Contextual Info: SD1127 RF & MICROWAVE TRANSISTORS VHF FM MOBILE APPLICATIONS Features • • • • • 175 MHz 12.5 VOLTS POUT = 4.0 W MINIMUM GP = 12.0 dB GROUNDED EMITTER 1. Collector 2. Base 3. Emitter TO-39 DESCRIPTION: The SD1127 is a epitaxial silicon NPN transistor designed

CHIP TRANSISTOR

Abstract: gp 219 NPN planar RF transistor SD1127
Contextual Info: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 SD1127 RF & MICROWAVE TRANSISTORS VHF COMMUNICATIONS Features • • • DESIGNED FOR VHF MILITARY AND COMMERCIAL EQUIPMENT 4.0 WATTS (MIN) WITH GREATER THAN 10 dB GAIN

sd1127

Contextual Info: <3\ U na. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 SD1127 RF & MICROWAVE TRANSISTORS VHP FM MOBILE APPLICATIONS Features • • • • • I 175MHz 12.5 VOLTS POUT = 4.0 W MINIMUM G P =12.0dB

SD1127

Contextual Info: SD1127 SILICON NPN RF POWER TRANSISTOR DESCRIPTION: The ASI SD1127 is designed for VHF mobil communications applications up to 175 MHz. FEATURES: PACKAGE STYLE TO-39 • Grounded Emiter The ASI SD1127  Gp 12 dB @ 12.5V 175 MHz  Pout 4.0 W Min. MAXIMUM RATINGS

J148

Contextual Info: SD1127 SILICON NPN RF POWER TRANSISTOR DESCRIPTION: The ASI SD1127 is designed for VHF mobil communications applications up to 175 MHz. FEATURES: PACKAGE STYLE TO-39 • Grounded Emiter The ASI SD1127 • Gp 12 dB @ 12.5V 175 MHz • Pout 4.0 V Min. MAXIMUM RATINGS

Contextual Info: NATIONA L SEMICOND {LOGICI 10E D | t,SD1125 DObSHbl D | National Semiconductor - T : e - / Ù > - O eì ' - O b MM54HC164/MM74HC164 8-Bit Serial-in/Parallel-out Shift Register 4* X o S s «g X o General Description 0> The 54HC/74HC logic family Is functionally as well as pin­

Contextual Info: SD1127 RF & MICROWAVE TRANSISTORS VHF FM MOBILE APPLICATIONS Features • • • • • 175 MHz 12.5 VOLTS POUT = 4.0 W MINIMUM GP = 12.0 dB GROUNDED EMITTER 1. Emitter 2. Base 3. Collector TO-39 DESCRIPTION: The SD1127 is a epitaxial silicon NPN transistor designed

TO-228AA

Contextual Info: TELEDYNE COMPONENTS T W X m EÖE D M öWbUS ^ æ QüQb417 3 J * r 3s m i 2 7 SEMICONDUCTOR N-CHANNEL ENHANCEMENT-MODE VERTICAL D-MOS FET ULTRA LOW-LEAKAGE ORDERING INFORMATION SD1127BD TO-228AA TO-92 Plastic Package SD1127CHP Sorted Chips in Waffle Pack

SD1127

Abstract: J11 transistor
Contextual Info: SD1127 RF & MICROWAVE TRANSISTORS VHF FM MOBILE APPLICATIONS Features • • • • • 175 MHz 12.5 VOLTS POUT = 4.0 W MINIMUM GP = 12.0 dB GROUNDED EMITTER 1. Collector 2. Base 3. Emitter TO-39 DESCRIPTION: The SD1127 is a epitaxial silicon NPN transistor designed

J148

Abstract: SD1127
Contextual Info: SD1127 RF & MICROWAVE TRANSISTORS VHF FM MOBILE APPLICATIONS Features • • • • • 175 MHz 12.5 VOLTS POUT = 4.0 W MINIMUM GP = 12.0 dB GROUNDED EMITTER 1. Emitter 2. Base 3. Collector TO-39 DESCRIPTION: The SD1127 is a epitaxial silicon NPN transistor designed

J148

Abstract: SD1127
Contextual Info: SD1127 SILICON NPN RF POWER TRANSISTOR DESCRIPTION: The ASI SD1127 is designed for VHF mobil communications applications up to 175 MHz. FEATURES: PACKAGE STYLE TO-39 • Grounded Emiter The ASI SD1127 • Gp 12 dB @ 12.5V 175 MHz • Pout 4.0 V Min. MAXIMUM RATINGS

ara ic 1230

Abstract: lp2953 lp29531 LP2962 LP29521 LP29521M LP2951 LP2952 LP2952AI LP2952I
Contextual Info: National Semiconductor LP2952/LP2952A/LP2953/LP2953A Adjustable Micropower Low-Dropout Voltage Regulators General Description Features The LP2952 and LP2953 are micropower voltage regulators with very low quiescent current 130 jiA typical at 1 mA load and very low dropout voltage (typ. 60 mV at light load

voltage regulator diode 7228

Abstract: icl 7216 ICL 7216 D 11d003 low esr panasonic fj chang aluminum capacitor 2T transistor surface mount 5v ZENER DIODE 0.1 M2597 LM2594
Contextual Info: LM2597 National Semiconductor LM2597 SIMPLE SWITCHER Power Converter 150 kHz 0.5A Step-Down Voltage Regulator, with Features General Description The LM2597 series of regulators are monolithic integrated circuits that provide all the active functions for a step-down

mce544

Abstract: bfr96 equivalent MC3042 Bipolar Transistor y 200Mhz MRF237 / SD1127 MC1343 MCE545 transistor 5ghz pnp MC1309 MRF630
Contextual Info: MC3042 WAFFLE PACK DIE RF PRODUCTS RF & MICROWAVE TRANSISTORS DIVISION DESCRIPTION KEY FEATURES EL PR The MC3042 is a high gain, discrete silicon bipolar transistor, shipped in waffle pack. ! 1Watt Output Power @ 400MHz ! Gold Back Metal IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com

DIODE RK 306

Abstract: tr/DIODE RK 306
Contextual Info: DETECTORS POSITION SENSITIVE DIODE SD-503 SD-503B, m ^ t o The SD-503 is position sensors fo r au to m a tic focusing of camera. FEATURES • Laser beam fo c u s in g /p o s itio n in g is best perform ed. • High perform ance • High r e lia b ility in dem anding environments.

sn76131

Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157

Motorola transistors MRF 947

Abstract: trimpots 3296 transistor C5386 1n4740 2N5591 Motorola 2N5688 CQ 542 Transistor npn motorola equivalent transistor of 2sc3358 HB215/D ic cd 2399 gp
Contextual Info: Selector Guide 1 Discrete Transistor Data Sheets Amplifier Data Sheets Monolithic Integrated Circuit H Data Sheets mm Case Dimensions Cross Reference and Sales Offices 6 M MOTOROLA RF Device Data This publication presents technical information for the several product families that