SD TRANSISTOR THOMSON Search Results

SGSP201

Abstract: SGS-THOMSON 435
Contextual Info: r i 7 SGS-THOMSON ^ 7 # MtgœiLIÊTrœiOÊS SGSP201 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE V DSS SGSP201 100 V ^DS on 1.4 fi Id 2.0 A • HIGH SPEED SW ITCHING APPLICATIO NS • ULTRA FAST SW ITCHING • EASY DRIVE FOR REDUCED COST AND SIZE

STHV102

Abstract: transistor STHV102 BALLAST 380V ctv circuit diagram
Contextual Info: SGS-THOMSON ^ 7 #„ [ÜDlgœtEtLIKg'irMRODtgi STHV102 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR PRELIMINARY DATA TYPE STHV102 • • • • V DSS ^DS on 1000 V 3.5 fì 4.2 A 1000 V - VERY HIGH VOLTAGE FOR SMPS EASY DRIVE - REDUCED COST AND SIZE

transistor di 556

Abstract: SGSP477
Contextual Info: T SGS-THOMSON ^7# MÊfôimiiËïrMMÊI SGSP477 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE V DSS ^DS on SGSP477 200 V 0.17 fi Id 20 A • HIGH SPEED SWITCHING APPLICATIONS • HIGH CURRENT - FOR TELECOMM POWER SUPPLIES • ULTRA FAST SWITCHING

MRF245

Abstract: SD1076 CM45-12A BLY22 sd1238 BLX66 MM1669 PT8828 BLY94 PT9780
Contextual Info: 450 .512 MHz class C for mobile applications ii com m unications m obiles UHF, classe C TYPE PACKAGE CONFIG. THOMSON-CSF P ou t Vcc Pin min Wl (V (MHz) (W) Gp min (dB) T O -46 (CB-4011 SD 1132-4 SD 1115-2 SD 1482 XO-72 SL TO-117 SL .280 4L STUD (B) CE

SD1076

Abstract: MRF245 2n918 PT8811 BLY94 pt8710 PT9788 PT9780 SD1238 MRF510
Contextual Info: 2 - 30 MHz linear SSB applications applications linéaires BLU TYPE PACKAGE CONFIG. THOMSON-CSF V CC V Pout (PEP) Pin fo (W) (W) (MHz) Gp min (dB) IMD max (dB) 4LFL 4LFL 4LFL 4LFL CE CE CE CE 12,5 12,5 12,5 12,5 > > > > 20 50 75 100 30 30 30 30 0,63 1,6

SGSP321

Abstract: SGSP322
Contextual Info: w # SGS-THOMSON kT#» S»flD @œ[i[L[l(gî»6aD(gi SGSP321 SGSP322 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS • • • • TYPE V D SS ^ D S (o n SGSP321 SGSP322 60 V 50 V 0.13 0.13 fi fi 16 A 16 A HIGH SPEED SWITCHING APPLICATIONS LOW VOLTAGE DC/DC CONVERTERS

mrf245

Abstract: SD1416 PT9788 PT8710 2N5642 BLY94 PT8811 BLX66 PT8740 2N4072
Contextual Info: 88. 108 MHz class C for FM tansmitters émetteurs/réémetteurs FM, classe C TYPE SD 1457 SD 1460 PACKAGE CONFIG. Vcc CE CE 28 28 . 500 4LFL . 500 4LFL Pout W (V) > THOMSON-CSF fo (MHz) Pin (W) Gp (dB) (% ) 108 108 7,5 20 > 10 9 75 75 75 160 r!c .380 4L FL

Contextual Info: SGS-THOMSON HDeæHLISTrisîQÜDlgS STN2N06 N - CHANNEL ENHANCEMENT MODE _POWER MOS TRANSISTOR ADVANCE DATA TYPE STN2N06 V d ss R DS on I dcont 60 V < 0.250 £2 2 A . TYPICAL RDS(on) =0.21 Q . AVALANCHE RUGGED TECHNOLOGY . SOT-223 CAN BE WAVE OR REFLOW

sgsp358

Abstract: tr/pcb-3/SGSP358
Contextual Info: SGS-THOMSON SGSP358 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR • • • • TYPE V DSS ^DS on SGSP358 50 V 0.3 a Id 7A HIGH SPEED SWITCHING APPLICATIONS GENERAL PURPOSE ULTRA FAST SWITCHING EASY DRIVE FOR REDUCED COST AND SIZE INDUSTRIAL APPLICATIONS:

Contextual Info: r^7 SGS-THOMSON KlôtgœillLIKg'inSÛRSDtgi BUZ74 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE V DSS ^ D S o n BUZ74 500 V 3.0 Q 2.4 A • HIGH SPEED SWITCHING APPLICATIONS • HIGH VOLTAGE - 500V FOR OFF-LINE SMPS • ULTRA FAST SWITCHING FOR OPERATION

BUZ76A

Contextual Info: ¿ = 7 SCS THOMSON BUZ76A ilO g[^ö i!Li ]I[HMO©§ N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE VDss ^DS(on) BUZ76A 400 V 2.5 ß 2.6 A • HIGH VOLTAGE - FOR OFF-LINE APPLICATIONS • ULTRA FAST SWITCHING • EASY DRIVE - FOR REDUCED COST AND SIZE

hv102

Abstract: transistor STHV102 ctv circuit diagram transistor AJPS 609 transistor
Contextual Info: SGS-THOMSON HD K ô iLi(gU (ô)[MD(gi S T H V 102 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR PRELIMINARY DATA TYPE STHV102 • • • • V DSS ^DS(on) 1000 V 3.5 fl Id 4.2 A 1000 V - VERY HIGH VOLTAGE FOR SMPS EASY DRIVE - REDUCED COST AND SIZE

transistor BUZ20

Abstract: BUZ20
Contextual Info: fZ T SGS-THOMSON HD g(^ (ilL(i(g'ir»M(gi B U Z20 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE V DSS ^D S(on BUZ20 100 V 0.2 ß 12 A • 100 VOLTS - FOR UPS AP PLICATIO NS • ULTRA FAST SW ITCHING • RATED FOR UNCLAM PED INDUCTIVE SW ITCHING (ENERGY TEST) ♦

20/SGSP577

Contextual Info: r=J SGS-THOMSON I t , . [« gCMiliLlETMMëS_ SGSP577 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE V DSS ^D S(on SGSP577 200 V 0.17 ß Id 20 A • HIGH SPEED SWITCHING APPLICATIONS • HIGH CURRENT - FOR TELECOMM POWER SUPPLIES • ULTRA FAST SWITCHING

BUZ21

Abstract: schematic diagram UPS din 40040 humidity
Contextual Info: rrj SCS-THOMSON 4-1% BUZ21 * 7 / . N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE V DSS R DS on •d BUZ21 100 V 0.1 ß 19 A . 100 VOLTS - FOR DC/DC CONVERTERS . H IG H CURRENT . RATED FOR UNCLAMPED INDUCTIVE SWITCHING (ENERGY TEST) ♦ . ULTRA FAST SWITCHING

SGSP319

Contextual Info: n ij SGS-THOMSON SGSP319 * 7 # N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR • • • • TYPE Voss SGSP319 500 V ^DS on 3.8 ß Id 2.8 A HIGH SPEED SWITCHING APPLICATIONS 500V - HIGH VOLTAGE FOR SMPS ULTRA FAST SWITCHING EASY DRIVE FOR REDUCED COST AND SIZE

buz45

Contextual Info: / = T SGS-THOMSON *7# R iflö fg [^ S I[L I in M )iD (g i BUZ45 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE V DSS BUZ45 500 V R DS(on) 0.6 fi *D 9.6 A • HIGH VOLTAGE - FOR OFF-LINE SMPS • ULTRA FAST SW ITCHING FOR OPERATION AT < 100KHz

SGSP579

Contextual Info: Æ T SGS-THOMSON SGSP579 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE V DSS SGSP579 500 V ^DS on 0.7 n 'd 9 A • HIGH SPEED SWITCHING APPLICATIONS • HIGH VOLTAGE - 9A FOR UP TO 350W SMPS • ULTRA FAST SWITCHING - FOR OPERATION AT > 100KHz • EASY DRIVE - REDUCED COST AND SIZE

STH80N05

Abstract: C5632 C8052 STW80N05 q04sn STH80N05FI DIODE YV 950 gc229 MN14
Contextual Info: 7 ^ 2 3 7 o c m i'm TT2 •SG TH STH80N05/FI STW80N05 SGS-THOMSON me N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STH80N05 STH80N05FI STW 80N05 . . ■ . . . . ■ V dss R D S on Id 50 V 50 V 50 V < 0.012 £2 < 0.012 n < 0.012 f l 80 A 52 A 80 A

Contextual Info: SGS-THOMSON ÍIJCTIMfflO STB60N06-14 N - CHANNEL ENHANCEMENT MODE _ POWER MOS TRANSISTOR PRELIMINARY DATA TYPE V STB60N06-14 dss 60 V Id R D S o n < 0.014 n 60 A TYPICAL R DS(on) =0.012 Q AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100°C

Contextual Info: □ Q B' ï ba b 3 • ' ' P 3^-11 S G S -T H O M S O N G F . H L iÊ T T M D Ê i B U Z 4 2 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR S G S-THOMSON TYPE V Dss BUZ42 500 V 3DE RDS on 2 Q » Id 4 A • HIGH VOLTAGE - FOR OFF-LINE SM PS • ULTRA FAST SW ITCHING FOR OPERATION

sgsp330

Contextual Info: rZ 7 SGS-THOMSON ^TÆ» MEMIILiOTiMDgi SGSP330 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE V DSS ^D S on 'd SGSP330 450 V 3 n 3 A • HIGH SPEED SWITCHING APPLICATIONS • HIGH VOLTAGE - 450V FOR OFF-LINE SMPS • ULTRA FAST SWITCHING FOR OPERATION

irf350

Abstract: IRF350N EC075
Contextual Info: * 7m„ M g»(I[L[I(glT[KMO(g§ /= T SGS-THOMSON IRF350 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE V DSS R DS(on IRF350 400 V 0.3 Q 15 A • HIGH VOLTAGE - FOR OFF-LINE SMPS • HIGH CURRENT - FOR SMPS UP TO 350W • ULTRA FAST SWITCHING - FOR OPERATION

Contextual Info: * 7/ SGS-THOMSON ilLiCTWDe STB5NA80 N - CHANNEL ENHANCEMENT MODE _POWER MOS TRANSISTOR PRELIMINARY DATA TYPE STB5NA80 V dss RDS on Id 800 V < 2.4 Í2 4.7 A . . . . . . . TYPICAL RDs(on) =1.8 ft AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100°C