SD 636 TRANSISTOR Search Results

Contextual Info: SIEMENS BUZ 91 Not for new design SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type BUZ 91 Vds 600 V b 8.5 A ^DS on Package Ordering Code 0.8 Í2 TO-220 AB C67078-S1342-A2 Maximum Ratings Parameter Symbol Continuous drain current

BUZ91

Abstract: transistor buz91 C67078-S1342-A2 235bQ5 gs d050 transistor 91 330
Contextual Info: SIEMENS BUZ 91 Not for new design SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type BUZ 91 Vds 600 V h ^DS on Package Ordering Code 8.5 A 0.8 £2 TO-220 AB C67078-S1342-A2 M axim um Ratings Parameter Symbol Continuous drain current

SS 550

Abstract: SS550
Contextual Info: T em ic IRFD020 Siliconix N-Channel Enhancement-Mode Transistor Product Summary V BR DSS 0 0 r DS(on) (S2) I d (A) 50 0.10 2.4 U 4-P in D IP oJt a Top View N-Channel M OSFET Absolute Maximum Ratings (Ta = 25°C Unless Otherwise Noted) Symbol Limit Drain-Source Voltage

buz339

Abstract: ds 1-08 diode
Contextual Info: SIEMENS SIPMOS Power Transistor • • • BUZ 339 N channel Enhancem ent mode Avalanche-rated Type BUZ 339 DS on 500 V 11.5 A 0.5 £2 Package i) O rdering Code TO-218 AA C 67078-S3133-A2 M axim um Ratings Parameter Symbol Continuous drain current, Tc = 33 "C

Contextual Info: 1 ¿9 ft? prodtK-tn M ic r o s e m i 1 4 0 C o m m e r c e D r iv e M o n t g o m e r y v iiie , P A 1 8 9 3 6 -1 0 1 3 T e i: 2 1 5 8 3 1 -9 8 4 0 SD1500 RF & MICROWAVE TRANSISTORS L BAND RADAR APPLICATiONS « DES'-GNED FOR USE IN LONG PULSE Lb a n d a p p l ic a t io n ;-; UKE RADAR, JTtOS.

k436w

Abstract: 636 transistor sd 636 transistor
Contextual Info: Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,

SK 136 transistor

Contextual Info: Philips Semiconductors Product specification PowerMOS transistor GENERAL DESCRIPTION BUK466-100A QUICK REFERENCE DATA N-channel enhancement mode field-effect power transistor in a plastic envelope suitable for surface mount applications. The device is intended for use in

Contextual Info: Philips Semiconductors Product specification PowerMOS transistor GENERAL DESCRIPTION BUK466-100A QUICK REFERENCE DATA N-channel enhancement mode field-effect power transistor in a plastic envelope suitable for surface mount applications. The device is intended for use in

Contextual Info: Gì TYPE STP2N 80 STP2N80FI STP2N80 STP2N80FI SGS-THOMSON [M »»iOT Q KS N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR V dss R dS(OII) Id 800 V 800 V 7 a 7 Q 2.4 A 1.5 A . AVALANCHE RUGGEDNESS TECHNOLOGY . 100% AVALANCHE TESTED . REPETITIVE AVALANCHE DATA AT 100°C

2sc1013

Abstract: 2SD188 2SD261 642PA 2SD180 New Transistor Manual 2SC1222 TRANSISTOR 2Sc1222 2SA623 2SC1098
Contextual Info: 5 - - FOR USE BY ELECTRICIANS OVERSEAS : •M-EiiOSW HE New T ransistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will m ake full use of the data provided in this manual by referring to the Japanese-English

DH47

Abstract: BUK571 BUK571-100A BUK571-100B buk541-100 K571
Contextual Info: Philips Components D ata sheet status Prelim inary specification date of issue M arch 1991 R eplaces B U K 54 1-1 00A /B BUK571-100A/B PowerMOS transistor Logic level FET SbE D PHILIPS INTERNATIONAL GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power

transistor 8BB smd

Abstract: smd diode marking 3fs smd code book B3 transistor transistor marking smd 7c smd diode 77a q1333su BUZ100S smd DIODE 3FS H7 marking code smd smd transistor c015
Contextual Info: BUZ 10OS In fin e o n technologie» SIPMOS Power Transistor Product Summary Features 55 V • N channel Drain source voltage ^DS • Enhancement mode Drain-Source on-state resistance • Avalanche rated Continuous drain current ñ DS on 0.015 Í2 77 A • dv/df rated

IBEK 24 IPS 10-05-T

Abstract: IBEK 24 IPS 10-1515-T 10-05-TC 10-1515-T 10-12-T 24ips10 5-1212-T
Contextual Info: 10 Watt-Family DC-DC Converters <40 W IBEK DC-DC Converters Rugged Environment 10 Watt-Family Input to output isolation test voltage up to 5 kVrm, 1 or 2 Output*: IPS 10, PW10, IPZ 5 Input voltage ranges: 10—33 V DC and 18.72 V DC • Extremely high isolation test voltages

A 928A

Abstract: 74Ks A992 sc2316 A928a sc1845 PNP 3-224 2N5401K
Contextual Info: PNP Medium Power Transistors Device No. [Mark] Case Style VCES* V V CBO EBO V (V) Min (V) Min Min VCEO (continued) ICBO IC V CE VCB hFE & @ Min Max (mA) (V) (nA) @ (V) Max V BE(SAT) V BE(ON) * IC C ob (mA) @ (pF) (V) & IC (V) Max Max (I = ) Min Max B 10

PNP 2SD

Abstract: T1P61 2N3055 2N3055SD 2N3054 2N3439 2N3440 2N3713 BD224 2N3715
Contextual Info: 1 SEMICONDUCTORS INC OTE D | fi!3bbSG 0D0DSÖ2 4 | Power Transistors •c D E V IC E Max v CEO M ax A v hFE M in / M a x <$ lç P O L A R IT Y Powered by ICminer.com A v CE sat M a x fti Iq V A »T M in p D (M a x) T C =25°C MHi W PACK­ AGE 2N 3054 2N 3055

transistor k702

Abstract: transistor k703 transistor k79 transistor k215 TRANSISTOR K550 K206 transistor Transistor k822 CN701 transistor k620 transistor k230
Contextual Info: ORDER NO. CPD0603076C0 Notebook Computer CF-18 This is the Service Manual for the following areas. Z …for PCPE /CPE Model No. CF-18JHUZBZZ 2006 Matsushita Electric Industrial Co., Ltd. All rights reserved. Unauthorized copying and distribution is a violation of law.

str f 6267

Abstract: SMD MOSFET DRIVE DATASHEET 4606 STR 6656 TRANSISTOR C 6090 8050 sot-23 STR 6267 str 6267 f scr ky 202 HALL SOT-23-4 mosfet 4800
Contextual Info: Micrel Shortform Catalog February 2006 Shortform Catalog February 2006 2006 Micrel, Inc. The information furnished by Micrel, Inc., in this publication is believed to be accurate and reliable. However, no responsibility is assumed by Micrel for its use, nor any infringements of patents

CCITT FILTER DESIGN CIRCUIT DIAGRAM

Abstract: G711 474 m5e
Contextual Info: MITEL MT8960/61/62/63/64/65/66/67 IS 02-CM0S Integrated PCM Filter Codec Features • • • • • • ISSUE 10 ST-BUS compatible Transmit/Receive filters & PCM Codec in one I.C Meets AT&T D3/D4 and CCITT G711 and G712 i-Law: MT8960/62/64/67 A-Law: MT8961/63/65/67

G711

Abstract: CCITT FILTER DESIGN CIRCUIT DIAGRAM sd02 transistor array relay+5v+5+pin
Contextual Info:  ISO2-CMOS MT8960/61/62/63/64/65/66/67 Integrated PCM Filter Codec Features • • • • • • • • • • • • • • ISSUE 10 ST-BUS compatible Transmit/Receive filters & PCM Codec in one I.C Meets AT&T D3/D4 and CCITT G711 and G712 µ-Law: MT8960/62/64/67

Contextual Info:  ISO2-CMOS MT8960/61/62/63/64/65/66/67 Integrated PCM Filter Codec Features • • • • • • • • • • • • • • ISSUE 10 ST-BUS compatible Transmit/Receive filters & PCM Codec in one I.C Meets AT&T D3/D4 and CCITT G711 and G712 µ-Law: MT8960/62/64/67

G711

Contextual Info: ISO2-CMOS MT8960/61/62/63/64/65/66/67 Integrated PCM Filter Codec Features • • • • • • • • • • • • • • ISSUE 10 ST-BUS compatible Transmit/Receive filters & PCM Codec in one I.C Meets AT&T D3/D4 and CCITT G711 and G712 µ-Law: MT8960/62/64/67

G711

Contextual Info: ISO2-CMOS MT8960/61/62/63/64/65/66/67 Integrated PCM Filter Codec Features • • • • • • • • • • • • • • ISSUE 10 ST-BUS compatible Transmit/Receive filters & PCM Codec in one I.C Meets AT&T D3/D4 and CCITT G711 and G712 µ-Law: MT8960/62/64/67

G711

Contextual Info:  ISO2-CMOS MT8960/61/62/63/64/65/66/67 Integrated PCM Filter Codec Features • • • • • • • • • • • • • • ISSUE 10 ST-BUS compatible Transmit/Receive filters & PCM Codec in one I.C Meets AT&T D3/D4 and CCITT G711 and G712 µ-Law: MT8960/62/64/67

G711

Contextual Info: ISO2-CMOS MT8960/61/62/63/64/65/66/67 Integrated PCM Filter Codec Features • • • • • • • • • • • • • • ISSUE 10 ST-BUS compatible Transmit/Receive filters & PCM Codec in one I.C Meets AT&T D3/D4 and CCITT G711 and G712 µ-Law: MT8960/62/64/67