SCHEMATIC ATU HF Search Results

DTC123TKA

Contextual Info: DTA113TKA DTC123TKA Transistors I Digital transistor built-in resistors DTA113TKA •F e atu res 1 ) Built-in bias resistors enable the configuration of an inverter circuit without connecting externa! input resistors. 2 ) The bias resistors consist of thin-fHm resistors with complete

BUH715

Abstract: GC328
Contextual Info: r = 7 m 7# S G S - T H O M S O N R!SDe^ IILie¥IRi®liaD l BUH715 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR • SGS-THOMSON PREFERRED SALESTYPE . HIGH VOLTAGE CAPABILITY ■ U.L. RECOGNISED ISOWATT218 PACKAGE U.L. FILE# E817 3 4 (N APPLICATIONS:

MIC2941A

Contextual Info: M IC 2 9 4 0 A /2 9 4 1 A 1.25A Low-Dropout Voltage Regulator Prelim inary Inform ation General Description Features The MIC2940A and MIC2941A are “bulletproof” efficient voltage regulators with very low dropout voltage typically 40mV at light loads and 350mV at 1A , and low quiescent

tip35

Abstract: tip 35c
Contextual Info: 7 ^ 5 3 7 002^247 SGS-THOMSON T TIP35/35A/35B/35C TIP36/36A/36B/36C S G S - T H 0 MS 0 N 3QE ] POWER AMPLIFIER AND SWITCHING APPLICATIONS ADVANCE DATA DESCRIPTION The TIP35/TIP35A/TIP35B/TIP35C are silicon epi­ taxial-base NPN transistors in SOT-93 plastic

2n5415

Contextual Info: r Z Z SCS-THO M SO N 2N5415 •v# 2N5416 »aii eiR iiLieTK®ioei SILICON PNP TRANSISTORS • SGS-THOMSON PREFERRED SALESTYPES ■ PNP TRANSISTOR DESCRIPTION The 2N5415, 2N5416 are high voltage silicon epitaxial planar PNP transistors in Jedec TO-39 metal case designed for use in consumer and

2SD2470

Contextual Info: 2SD2142 K / 2SC2062S 2SD2470 Transistors I High-gain Amplifier Transistor 32V, 12V 2SD2142K / 2SC2062S •F e atu res • A b so lu te maximum rating« (Ta=25°C) 1 ) Darlington connection for a high hre. (Min. 5 0 0 0 at V ce /Ic =3 V /0 .1 A ) 2 ) H igh input im pedance.

D41K1

Contextual Info: D41K Series File Number 2340 T E R M IN A L D E S IG N A T IO N S 2-Ampere Silicon P-N-P Power T ransistors \ Com plementary to the D40K Series TAB o F e atu re s: • Operates from IC without predriver Applications: Switching regulator Lamp driver Touch switch

K460

Abstract: 1di200
Contextual Info: 1DI200ZP-120 200A h 7 ' < * 7 - i> = L - ) V '• Outline Drawings POWER TRANSISTOR MODULE ■ 4# ^ : F e atu res • hFEA^lav,' High DC C urren t Gain • K rt* • seifiSwiffiB&'it ■ f f l i i l : A p p lic a tio n s • i/L ffl-f w < — £ General Purpose Inverter

Contextual Info: FI 73232J7 D D gqiO q g • ^ 3 SGS-THOMSON «[B miOT KS 3 - MJE13006 MJE13007/A S G S-THOMSON 3GE D MOTOR CONTROL, SWITCH REGULATORS DESC RIPTIO N The MJE13006, MJE13007 and MJE13007Aare si­ licon multiepitaxial mesa NPN transistors. They are mounted in Jedec TO-220 plastic package, inten­

Contextual Info: ILH100 SIEMENS HERMETIC PHOTOTRANSISTOR OPTOCOUPLER FE A T U R E S • O p e ra tin g T e m p e ra tu re R ang e, -5 5 ° C to + 125°C • C u rre n t T ran sfe r R atio G u a ra n te ed from -5 5 ° C to + 100°C A m b ie n t T e m p e ra tu re R ang e • H igh C u rre n t T ran sfe r R atio a t Low In p u t C u r­

Contextual Info: Whp\ HEWLETT mLftM P A C K A R D Herm etically Sealed, High Speed, High CMR, Logic Gate Optocouplers Technical Data 6N134* 81028 HCPL-563X HCPL-663X HCPL-565X 5962-98001 HCPL-268K HCPL-665X 5962-90855 HCPL-560X *See m atrix fo r available extensions. Features

2DI75M-120

Abstract: T151 T930 B383
Contextual Info: 2DI75M-1 20 75A ' < r7 — h 7 V y X ^ i y ±/n °7-Z î Sd.-JU a — 71/ : Outline Drawings POWER TRANSISTOR MODULE Mounting hole i Features • 12 = ^ = C2E1 High Arm Short Circuit Capability • h F E ^ f t i' /T * V £ / Including Free Wheeling Diode

Contextual Info: HFA1113 S e m iconductor September 1998 850MHz, Low Distortion, Output Limiting, Programmable Gain, Buffer Amplifier The HFA1113 is a high speed Buffer featuring user programmable gain and output limiting coupled with ultra high speed performance. This buffer is the ideal choice for

Contextual Info: r= Z S C S -T H O M S O N TDA1904 4W AUDIO AMPLIFIER • H IG H O U TPUT UP TO 2A CURRENT C A P A B IL IT Y • PRO TEC TIO N A G A IN S T CHIP O V E R T E M ­ PER ATU R E • LOW NOISE • H IG H SUPPLY V O L T A G E REJECTION • SUPPLY V O L T A G E

Contextual Info: MOTOROLA Order this document by 2N6387/D SEMICONDUCTOR TECHNICAL DATA 2N6387 2N 6388* Plastic Medium-Power Silicon Transistors ‘ Motorola Preferred Device . . . d e sig ned for g e n e ra l-p u rp o s e am p lifie r and lo w -s p e e d sw itch ing applications.

TIP55A

Abstract: TIP58A d03b TIP55 TIP142 40960 rca TIP56A TIP57A TIP56 TIP5
Contextual Info: TEXAS INSTR -COPTO* 89^1726 TEXAS "b5 INSTR DE 00 3 ^5 3 ^ COPTO 62C 36836 TIP55A, TIP56A, TIP57A, TIP58A N-P-N SILICON POWERJRANSISTORS 3 3 ~ * l R EV ISED O CTO BE R 1 9 8 4 Min V(BR)CEO 2 5 0 v to 4 0 0 V 50 W a t 100 ° C C ase Temperature 10 A Peak Collector Current

TE 2556

Abstract: top 2556 en *A3255
Contextual Info: HA-2556 fü HARRIS S E M I C O N D U C T O R 57MHz, W ideband, Four Quadrant, Vo I tag e O u tp u t An al og M u lt ip li e r November 1 9 9 6 Features Description • Hi g h S p e e d V o l t a g e O u t p u t . 4 5 0 V / | i s

Harris DG303

Abstract: HI-3001 HI-383 HI-303 HL30
Contextual Info: H arris HARRIS SEMICOND SECTOR 10E $ | 43Q2571 001 34S5 3 | HI-303/883 , . T-51-11 Dual SPDT CMOS Analog Switch January 1989 Features Description • This Circuit Is Processed In Accordance to Mll-Std883 and Is Fully Conformant Under the Provisions of Paragraph 1.2.1.

transistor 669

Abstract: CA3096E RCA-CA3096CE CA3096AE CA3096CE CA3096 CA3096A CA3096C thyristor firing circuits schematic of 2f npn transistor
Contextual Info: G E SOLID STATE 01 D E | 3A7SDfll DDlMblS M • CA3096, CA3096A, CA3096C T S 3 ¿5 N-P-N/P-N-P Transistor Array Five-Independent Transistors: Three n-p-n and Tw o p-n-p Applications:

Contextual Info: HA-2546 fü HARRIS S E M I C O N D U C T O R 3 0 M H z , V o lt a g e O u t p u t , Two Q u a d r a n t A n a l o g M u lt ip li e r November 1996 Features Description • Hi g h S p e e d V o l t a g e O u t p u t . 3 0 0 V / | i s

Contextual Info: HFA3600 Semiconductor L o w -N o is e December 1996 A m p lifie r /M ix e r Features Description • LNA The HFA3600 is a silicon Low-Noise Amplifier with high per­ formance characteristics allowing the design of very sensi­ tive, wide dynamic-range 900MHz receivers with minimal

2N3800

Abstract: germanium diode germanium tu 38 e 2n4051 motorola 2N4280 2N3980 1N3492 MC710F 2N4276 2n3817
Contextual Info: DATA BDI S U P P L E M E NT This is the second supplement to the 2nd Edition of the Semiconductor Data Book originally published in August 1966. It is produced to keep an up-to-date listing of the most advanced semiconductor products. D evices characterized in this supplement include only the type numbers in tro­

transistor GT 1083

Abstract: Hewlett-Packard application note 967 HXTR-5102 4 ghz transistor hewlett-packard application note 972 Y2w TRANSISTOR HP 9605 HP-67 Silicon Bipolar Transistor Hewlett-Packard transistor amplifier 3 ghz
Contextual Info: PACKARD MM COM PON EN TS LINEAR POWER TRANSISTOR HXTR-5102 Features 20.3 TYP. 0.80 HIGH P1dB LINEAR POWER 29 dBm Typical at 2 GHz 27.5 dBm Typical at 4 GHz 14.2 (0.b6) TYP. 3-05 TYR ( 0 . 12 ) 2.0 (0.0801 HIGH P1dB GAIN 11.5 dB Typical at 2 GHz 7 dB Typical at 4 GHz

TKP 470 M

Abstract: L4562 hp 4562
Contextual Info: W fip l H E W L E T T m Lftm P A C K A R D High B andw idth, Analog/Video O ptocouplers Technical Data HCPL-4562 HCNW4562 Features Applications D escription • Wide Bandwidth!1!; 17 MHz HCPL-4562 9 MHz (HCNW4562) • High Voltage Gain!1!; 2.0 (HCPL-4562)