SC107B Search Results

Contextual Info: DMC96104 Silicon NPN epitaxial planar type Unit: mm For digital circuits DMC56104 in SSMini5 type package • Features  Low collector-emitter saturation voltage VCE sat  Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL: Level 1 compliant) 

dma96104

Contextual Info: DMA96104 Silicon PNP epitaxial planar type Unit: mm For digital circuits DMA56104 in SSMini5 type package • Features  Low collector-emitter saturation voltage VCE sat  Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL: Level 1 compliant) 

Contextual Info: DMG963H5 Silicon NPN epitaxial planar type Tr1 Silicon PNP epitaxial planar type (Tr2) Unit: mm For digital circuits DMG563H5 in SSMini5 type package • Features  Low collector-emitter saturation voltage VCE(sat)  Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL: Level 1 compliant)

2sc5929

Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Contextual Info: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

ESG456

Abstract: BC109C NPN C17S Transistor BC177 TO18 ir diode oerlikon BC107A BC107B ESG 456 BC109
Contextual Info: / A] VANI OERLIKON/ SEÏIICONJ) 3bE DSblbMfi DDODGDT fi H S E L I D -oi-ol SILICON DIODES - “¿ 7 - 0 \ T f - o i/o<y h) Trigger devices Pd Ta=25«C TYPE - ESG 4 5 6 • ESG 4 5 7 ESG 4 5 8 Von I f (P e a k ) mA mW 200 200 200 SEMICONDUCTOR* If Vt (Trigger Voltage)

SSM3J307T

Abstract: SSM3J328R SSM3J334R
Contextual Info: 2011-5 PRODUCT GUIDE General-Purpose Small-Signal Surface-Mount Devices Transistors, MOSFETs, ESD-Protection Diodes, Schottky Barrier Diodes, L-MOS 1- to 3-Gate Logic ICs , LDOs, Operational Amplifiers, Digital-Output Magnetic Sensors SEMICONDUCTOR h t t p : / / w w w . s e m i c o n . t o s h i b a . c o . j p / e n g

Contextual Info: EMG2 / UMG2N / FMG2A Datasheet NPN 100mA 50V Complex Digital Transistors Bias Resistor Built-in Transistors lOutline Parameter VCC IC(MAX.) R1 R2 Tr1 and Tr2 EMT5 UMT5 (3) (5) 50V 100mA 47kW 47kW (1) (4) (2) (5) EMG2 (SC-107BB) lFeatures 1) Built-In Biasing Resistors, R1 = R2 = 47kW.

DB5S310K0R

Contextual Info: DB5S310K Silicon epitaxial planar type For high speed switching circuits DB4J310K in SSMini5 type package Unit: mm • Features  Short reverse recovery time trr  Low forward voltage VF  Halogen-free / RoHS compliant EU RoHS / UL-94 V-0 / MSL: Level 1 compliant

marking g8

Abstract: SOT-353 marking code G8 SOT-353 marking code B2 rohm umg8n
Contextual Info: EMG8 / UMG8N NPN 100mA 50V Complex Digital Transistors Bias Resistor Built-in Transistors Datasheet lOutline Parameter VCC IC(MAX.) R1 R2 Tr1 and Tr2 EMT5 UMT5 (3) (5) 50V 100mA 4.7kW 47kW (2) (1) (4) (4) (1) (2) lFeatures (3) (5) EMG8 (SC-107BB) UMG8N SOT-353 (SC-88A)

marking G1

Contextual Info: EMG1 / UMG1N / FMG1A Datasheet NPN 100mA 50V Complex Digital Transistors Bias Resistor Built-in Transistors lOutline Parameter VCC IC(MAX.) R1 R2 Tr1 and Tr2 EMT5 UMT5 (3) (5) 50V 100mA 22kW 22kW (2) (1) (4) (1) (4) (2) (3) (5) EMG1 (SC-107BB) SMT5 lFeatures

dma5610

Contextual Info: DMA9610F Silicon PNP epitaxial planar type Unit: mm For digital circuits DMA5610F in SSMini5 type package • Features  Low collector-emitter saturation voltage VCE sat  Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL: Level 1 compliant) 

SC107B

Abstract: marking G3 G3 sot-353
Contextual Info: EMG3 / UMG3N / FMG3A Datasheet NPN 100mA 50V Complex Digital Transistors Bias Resistor Built-in Transistors lOutline Parameter VCEO IC(MAX.) R1 Tr1 and Tr2 EMT5 UMT5 (3) (5) 50V 100mA 4.7kW (2) (1) (4) (1) (4) (2) (3) (5) EMG3 (SC-107BB) SMT5 UMG3N SOT-353 (SC-88A)

Contextual Info: DMA96103 Silicon PNP epitaxial planar type Unit: mm For digital circuits DMA56103 in SSMini5 type package • Features  Low collector-emitter saturation voltage VCE sat  Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL: Level 1 compliant) 

Contextual Info: Doc No. TT4-EA-12738 Revision. 2 Product Standards Zener Diode DE5S062D0R DE5S062D0R Silicon epitaxial planar type Unit: mm For ESD protection DE3S062D in SSMini5 type package 1.6 0.2 • Features 5 0.13 4 1.2 1.6  High ESD  Halogen-free / RoHS compliant

SC107B

Abstract: SC-107BB
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . DE5S062D Silicon epitaxial planar type Unit: mm For ESD protection DE3S062D in SSMini5 type package • Features  High electrostatic discharge ESD  Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL: Level 1 compliant)

Contextual Info: EMG2 / UMG2N / FMG2A Datasheet NPN 100mA 50V Complex Digital Transistors Bias Resistor Built-in Transistors lOutline Parameter VCC IC(MAX.) R1 R2 Tr1 and Tr2 EMT5 UMT5 (3) (5) 50V 100mA 47kW 47kW (2) (1) (4) (4) (1) (2) (3) (5) EMG2 (SC-107BB) UMG2N SOT-353 (SC-88A)

Contextual Info: EMG11 / UMG11N Datasheet NPN 100mA 50V Complex Digital Transistors Bias Resistor Built-in Transistors lOutline Parameter Tr1 and Tr2 EMT5 UMT5 (3) (5) VCC IC(MAX.) R1 R2 50V 100mA 2.2kW 47kW (2) (1) (4) (4) (1) (2) (5) (3) EMG11 (SC-107BB) lFeatures UMG11N

Contextual Info: EMG6 / UMG6N / FMG6A Datasheet NPN 100mA 50V Complex Digital Transistors Bias Resistor Built-in Transistors lOutline Parameter VCEO IC(MAX.) R1 Tr1 and Tr2 EMT5 UMT5 (3) (5) 50V 100mA 47kW (2) (1) (4) (1) (4) (2) (3) (5) EMG6 (SC-107BB) UMG6N SOT-353 (SC-88A)

Contextual Info: EMG8 / UMG8N NPN 100mA 50V Complex Digital Transistors Bias Resistor Built-in Transistors Datasheet lOutline Parameter VCC IC(MAX.) R1 R2 Tr1 and Tr2 EMT5 UMT5 (3) (5) 50V 100mA 4.7kW 47kW (2) (1) (4) (4) (1) (2) lFeatures (3) (5) EMG8 (SC-107BB) UMG8N SOT-353 (SC-88A)

Contextual Info: EMG8 / UMG8N NPN 100mA 50V Complex Digital Transistors Bias Resistor Built-in Transistors Datasheet lOutline Parameter Tr1 and Tr2 VCC 50V 100mA 4.7kW 47kW IC(MAX.) R1 R2 EMT5 UMT5 (3) (5) (1) lFeatures (4) (2) (2) (1) (4) (3) (5) EMG8 (SC-107BB) UMG8N SOT-353 (SC-88A)

FMA4A

Contextual Info: EMA4 / UMA4N / FMA4A PNP -100mA -50V Complex Digital Transistors Bias Resistor Built-in Transistors Datasheet lOutline Parameter Tr1 and Tr2 VCEO -50V -100mA 10kW IC(MAX.) R1 EMT5 UMT5 (3) (5) (1) (4) (2) (5) EMA4 (SC-107BB) with complete isolation to allow negative biasing

Contextual Info: EMA2 / UMA2N / FMA2A PNP -100mA -50V Complex Digital Transistors Bias Resistor Built-in Transistors Datasheet lOutline Parameter Tr1 and Tr2 VCC -50V -100mA 47kW 47kW IC(MAX.) R1 R2 EMT5 UMT5 (3) (5) (1) (4) (2) (1) (4) (3) (5) EMA2 (SC-107BB) UMA2N SOT-353 (SC-88A)

UMA2N

Contextual Info: EMA2 / UMA2N / FMA2A PNP -100mA -50V Complex Digital Transistors Bias Resistor Built-in Transistors Datasheet lOutline Parameter VCC IC(MAX.) R1 R2 Tr1 and Tr2 EMT5 UMT5 (3) (5) -50V -100mA 47kW 47kW (2) (1) (4) (4) (1) (2) (3) (5) EMA2 (SC-107BB) UMA2N

marking g9

Abstract: SOT-353 marking code B2 fmg9 SC107B transistor marking G9
Contextual Info: EMG9 / UMG9N / FMG9A Datasheet NPN 100mA 50V Complex Digital Transistors Bias Resistor Built-in Transistors lOutline Parameter Tr1 and Tr2 VCC 50V 100mA 10kW 10kW IC(MAX.) R1 R2 EMT5 UMT5 (3) (5) (2) (1) (4) (4) (1) (2) (3) (5) EMG9 (SC-107BB) UMG9N SOT-353 (SC-88A)