SC-89 JEDEC Search Results

TSSOP 8PIN MARK 21

Abstract: land pattern for TSsOP 16 6pin land pattern for TSsOP 8 2952 8pin HA005-A-P
Contextual Info: CMOS IC PACKAGES Package Type DIP/TO Gull-wing Flat-lead WLP *1 Pin Count 3 8 4 5 3 5 6 3 5 8 14 8 10 8 16 24 8 5 6 8 8 10 6 4 6 8 4 5 6 8 Package Name TO-92 8-Pin DIP SC-82AB SC-88A SOT-23-3 SOT-23-5 SOT-23-6 SOT-89-3 SOT-89-5 8-Pin SOP JEDEC 14-Pin SOP

ULTVST5VESGP

Contextual Info: CHENMKO ENTERPRISE CO.,LTD ULTVST5VESGP ULTRA-LOW CAPACITANCE TVS VOLTAGE 5 V 125 WATTS PEAK PULSE POWER FEATURES *125W peak pulse power dissipation rating at tp= 8X20uSec * Low leakage curren a *Protects up to two I/O lines SC-75/SOT-523/SC-89-3 * High temperature soldering guaranteed :

2SC5547

Abstract: mark 641 sot dc AD 4272
Contextual Info: 〈Transistor〉 2SC5547 For High Frequency Amplify Application Silicon NPN Epitaxial Type DESCRIPTION OUTLINE DRAWING 2SC5547 is SC-62 SOT-89 package resin sealed silicon NPN epitaxial transistor. It is designed for high frequency application. UNIT:mm

Contextual Info: Si1013R/X Vishay Siliconix P-Channel 1.8 V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) () ID (mA) 1.2 at VGS = - 4.5 V - 350 1.6 at VGS = - 2.5 V - 300 2.7 at VGS = - 1.8 V - 150 SC-75A or SC-89 G APPLICATIONS 1 3 S • Halogen-free According to IEC 61249-2-21

Contextual Info: Si1012R, Si1012X Vishay Siliconix N-Channel 1.8 V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) () ID (mA) 0.70 at VGS = 4.5 V 600 0.85 at VGS = 2.5 V 500 1.25 at VGS = 1.8 V 350 • • • • • • • SC-75A or SC-89 G 1 APPLICATIONS 3

Contextual Info: Si1012R, Si1012X Vishay Siliconix N-Channel 1.8 V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) () ID (mA) 0.70 at VGS = 4.5 V 600 0.85 at VGS = 2.5 V 500 1.25 at VGS = 1.8 V 350 • • • • • • • SC-75A or SC-89 G 1 APPLICATIONS 3

Contextual Info: Si1013R/X Vishay Siliconix P-Channel 1.8 V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) () ID (mA) 1.2 at VGS = - 4.5 V - 350 1.6 at VGS = - 2.5 V - 300 2.7 at VGS = - 1.8 V - 150 SC-75A or SC-89 G APPLICATIONS 1 3 S • Halogen-free According to IEC 61249-2-21

Contextual Info: 2SD2661 Transistors Low frequency amplifier transistor 12V, 2A 2SD2661 External dimensions (Unit : mm) Features Low VCE(sat) ≤ 180mV (IC / IB = 1A / 50mA) 4.0 2.5 0.4 1.5 1.0 0.5 (1) 4.5 3.0 0.5 1.6 (2) 0.4 1.5 0.4 1.5 (3) ROHM : MPT3 JEITA : SC-62 JEDEC: SOT-89

Contextual Info: 2SD2661 Transistors Low frequency amplifier transistor 12V, 2A 2SD2661 zExternal dimensions (Unit : mm) zFeatures Low VCE(sat) ≤ 180mV (IC / IB = 1A / 50mA) 4.0 2.5 0.4 1.5 1.0 0.5 (1) 4.5 3.0 0.5 1.6 (2) 0.4 1.5 0.4 1.5 (3) ROHM : MPT3 JEITA : SC-62 JEDEC: SOT-89

2SD2661

Abstract: T100
Contextual Info: 2SD2661 Transistors Low frequency amplifier transistor 12V, 2A 2SD2661 zExternal dimensions (Unit : mm) zFeatures Low VCE(sat) ≤ 180mV (IC / IB = 1A / 50mA) 4.0 2.5 0.4 1.5 1.0 0.5 (1) 4.5 3.0 0.5 1.6 (2) 0.4 1.5 0.4 1.5 (3) ROHM : MPT3 JEITA : SC-62 JEDEC: SOT-89

Contextual Info: MCP111/112 Micropower Voltage Detector Features Package Types 3-Pin SOT-89 3-Pin SOT23-3/SC-70 VOUT 1 VSS 2 VDD MCP111/112 • Ultra-low supply current: 1.75 µA max. • Precision monitoring options of: - 1.90V, 2.32V, 2.63V, 2.90V, 2.93V, 3.08V, 4.38V and 4.63V

Contextual Info: Si1039X Vishay Siliconix P-Channel 1.8 V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 RDS(on) () ID (A) 0.165 at VGS = - 4.5 V - 0.95 0.220 at VGS = - 2.5 V - 0.82 0.280 at VGS = - 1.8 V - 0.67 SC-89 (6-LEADS) D 1 6 D D 2 5 D APPLICATIONS 3 4 • Cell Phones and Pagers

Contextual Info: WGSMF05C 5-Line ESD Array Peak Pulse Power 100 Watts Reverse Working Voltage 5.0 VOLTS P b Lead Pb -Free Features: * 100 Watts Peak Pulse Power per Line(tp=8/20µs) * Protects Up To Four / Five I/O Lines * Ultra-Small SC-89 Package (1.6 x 1.6 x 0.55mm) Requires Less Than 2.9mm2 Of PCB Area

Contextual Info: Si1037X Vishay Siliconix P-Channel 1.8 V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) () ID (A) 0.195 at VGS = - 4.5 V - 0.84 0.260 at VGS = - 2.5 V - 0.73 0.350 at VGS = - 1.8 V - 0.64 SC-89 (6-LEADS) APPLICATIONS D 1 6 D D 2 5 D 3 4 • Cell Phones and Pagers

Contextual Info: Si1039X Vishay Siliconix P-Channel 1.8 V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 RDS(on) () ID (A) 0.165 at VGS = - 4.5 V - 0.95 0.220 at VGS = - 2.5 V - 0.82 0.280 at VGS = - 1.8 V - 0.67 SC-89 (6-LEADS) D 1 6 D D 2 5 D APPLICATIONS 3 4 • Cell Phones and Pagers

CY7C1335

Abstract: CY7C1336 DO30 3Tg 21
Contextual Info: „ ADVANCED INFORMATION CY7C1335 CY7C1336 '# C Y P n h b b 32K x 32 Synchronous Cache RAM Features • Synchronous self-timed writes • Supports 75-MHz Pentium and PowerPC™ operations with zero wait states • Asynchronous output enable • JEDEC-standard 100 TQFP pinout

diode sy 345

Abstract: diode SY 192 sd 339 sy 320 diode SD 338 SY 345 KT 829 b k3451 KT 828 A SD337
Contextual Info: SERVICE-MITTEILUNGEN V E B R F T I N D U S T R I E V E R T R I E B R U N D F U N K UND F E R N S E H E N t B i n n a |r a d i o - t e l e v i s i o n I Ausgobe 1-2 _ _ Febr. 89 1-7 Mitteilung aus dam VEB RFT IV RuF Leipzig, Organisation Plan der Inventurtermine Ersatztell/sroßhandel 1989

2sc180

Abstract: 2SC176 2SC175 2SC76 3N36 2SC177 2SC73 2SC75 2SC77 2SC78
Contextual Info: SY M B O L S & C O D ES E X P L A IN E D IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,

L425

Abstract: lanskroun
Contextual Info: Ta CAPACITORS WITH CONDUCTIVE POLYMER ROBUST TO LEAD FREE PROCESS A B S T R A C T : Tantalum capacitors with conductive polymer cathodes have found a place in the market as a low ESR component with reduced ignition. Conductive polymer cathodes however, suffer from instability

MT1711

Abstract: 2sC103 transistor 2sC124 at336 2sc120 2SC103 2SC634 2SC632 2SC899 FK918
Contextual Info: SY M B O L S & C O D ES E X P L A IN E D IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,

3T202

Abstract: 25C60 2n1779 2n1780 2N1783 2T52 3N29 2SC175 2SC177 2SC73
Contextual Info: SY M B O L S & C O D ES E X P L A IN E D IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,

2N1103

Abstract: 2SC5220 2SA479 AC122-30 OC75N 2SC167 2SC166 2N2161 AF185 SFT155
Contextual Info: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,

2N35 Ge NPN

Abstract: 2SD128 2N2426 2SC18H 2SC34 2SD31 2SD32 GT1608 GT1609 SYL1454
Contextual Info: SY M B O L S & C O D ES E X P L A IN E D IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,

Contextual Info: LESHAN RADIO COMPANY, LTD. SCHOTTKY BARRIER DIODE LRB521S-30T1 zApplictions Low current rectification and high speed switching zFeatures 1 Extremelysmall surface mounting type. SC-79/SOD523 IO=200mA guaranteed despite the size. Low VF.(V F=0.40V Typ. At 200mA)