SI1012R Search Results

SC-75

Abstract: SC-75A SC-89 Si1012R-T1 Si1012X-T1
Contextual Info: Si1012R/X Vishay Siliconix N-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY FEATURES VDS (V) rDS(on) (W) ID (mA) 0.70 @ VGS = 4.5 V 600 20 0.85 @ VGS = 2.5 V 500 1.25 @ VGS = 1.8 V 350 D D D D D D SC-75A or SC-89 G S Pb-free Available BENEFITS D D D D D 1 3 TrenchFETr Power MOSFET: 1.8-V Rated

Si1012X-T1-GE3

Contextual Info: Si1012R/X Vishay Siliconix N-Channel 1.8 V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) () ID (mA) 0.70 at VGS = 4.5 V 600 0.85 at VGS = 2.5 V 500 1.25 at VGS = 1.8 V 350 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET: 1.8 V Rated

Si1012R

Contextual Info: SPICE Device Model Si1012R Vishay Siliconix N-Channel 1.8-V G-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Si1012R

Contextual Info: SPICE Device Model Si1012R Vishay Siliconix N-Channel 1.8-V G-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Contextual Info: Si1012R, Si1012X Vishay Siliconix N-Channel 1.8 V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) () ID (mA) 0.70 at VGS = 4.5 V 600 0.85 at VGS = 2.5 V 500 1.25 at VGS = 1.8 V 350 • • • • • • • SC-75A or SC-89 G 1 APPLICATIONS 3

SI1012X-T1-GE3

Abstract: si1012r-t1-ge3
Contextual Info: Si1012R/X Vishay Siliconix N-Channel 1.8 V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) () ID (mA) 0.70 at VGS = 4.5 V 600 0.85 at VGS = 2.5 V 500 1.25 at VGS = 1.8 V 350 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET: 1.8 V Rated

Contextual Info: Si1012R/X Vishay Siliconix N-Channel 1.8 V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) () ID (mA) 0.70 at VGS = 4.5 V 600 0.85 at VGS = 2.5 V 500 1.25 at VGS = 1.8 V 350 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET: 1.8 V Rated

AN609

Abstract: Si1012R n mosfet pspice parameters
Contextual Info: Si1012R_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

Contextual Info: Si1012R/X Vishay Siliconix N-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY FEATURES VDS (V) rDS(on) (W) ID (mA) 0.70 @ VGS = 4.5 V 600 20 0.85 @ VGS = 2.5 V 500 1.25 @ VGS = 1.8 V 350 D D D D D D SC-75A or SC-89 G S Pb-free Available BENEFITS D D D D D 1 3 TrenchFETr Power MOSFET: 1.8-V Rated

SC-75

Abstract: SC-75A SC-89 PC2255
Contextual Info: Si1012R/X Vishay Siliconix N-Channel 1.8 V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) () ID (mA) 0.70 at VGS = 4.5 V 600 0.85 at VGS = 2.5 V 500 1.25 at VGS = 1.8 V 350 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET: 1.8 V Rated

Si1012R-T1-E3

Abstract: Si1012X-T1-E3 Si1012X-T1-GE3 SC-75 SC-75A SC-89 SI1012R-T1-GE3
Contextual Info: Si1012R/X Vishay Siliconix N-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (mA) 0.70 at VGS = 4.5 V 600 0.85 at VGS = 2.5 V 500 1.25 at VGS = 1.8 V 350 • • • • • • • Halogen-free Option Available TrenchFET Power MOSFET: 1.8 V Rated

SI1012X-T1-E3

Abstract: Si1012X-T1-GE3 SI1012R/X SC-75 SC-75A SC-89 Si1012R-T1-E3 S-81543-Rev
Contextual Info: Si1012R/X Vishay Siliconix N-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (mA) 0.70 at VGS = 4.5 V 600 0.85 at VGS = 2.5 V 500 1.25 at VGS = 1.8 V 350 • • • • • • • Halogen-free Option Available TrenchFET Power MOSFET: 1.8 V Rated

Contextual Info: Si1012R, Si1012X Vishay Siliconix N-Channel 1.8 V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) () ID (mA) 0.70 at VGS = 4.5 V 600 0.85 at VGS = 2.5 V 500 1.25 at VGS = 1.8 V 350 • • • • • • • SC-75A or SC-89 G 1 APPLICATIONS 3

SC-75

Abstract: SC-75A SC-89 Si1012R Si1012X
Contextual Info: Si1012R/X New Product Vishay Siliconix N-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (mA) 0.70 @ VGS = 4.5 V 600 0.85 @ VGS = 2.5 V 500 1.25 @ VGS = 1.8 V 350 FEATURES BENEFITS APPLICATIONS D D D D D D D D D D D D Drivers: Relays, Solenoids, Lamps,

Si1012R

Contextual Info: SPICE Device Model Si1012R Vishay Siliconix N-Channel 1.8-V G-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

SC89-3

Abstract: si1012r-t1-ge3
Contextual Info: Si1012R/X Vishay Siliconix N-Channel 1.8 V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) () ID (mA) 0.70 at VGS = 4.5 V 600 0.85 at VGS = 2.5 V 500 1.25 at VGS = 1.8 V 350 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET: 1.8 V Rated

SC-75

Abstract: SC-75A SC-89 Si1012R Si1012X
Contextual Info: Si1012R/X New Product Vishay Siliconix N-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (mA) 0.70 @ VGS = 4.5 V 600 0.85 @ VGS = 2.5 V 500 1.25 @ VGS = 1.8 V 350 FEATURES BENEFITS APPLICATIONS D D D D D D D D D D D D Drivers: Relays, Solenoids, Lamps,

Contextual Info: TPS61020, TPS61024 TPS61025, TPS61027 3,25 mm x 3,25 mm www.ti.com SLVS451A – SEPTEMBER 2003 – REVISED APRIL 2004 96% EFFICIENT SYNCHRONOUS BOOST CONVERTER WITH 1.5-A SWITCH FEATURES • • • • • • • • • • • DESCRIPTION 96% Efficient Synchronous Boost Converter

marking BDR

Contextual Info: TPS61020, TPS61024 TPS61025, TPS61027 3,25 mm x 3,25 mm www.ti.com SLVS451A – SEPTEMBER 2003 – REVISED APRIL 2004 96% EFFICIENT SYNCHRONOUS BOOST CONVERTER WITH 1.5-A SWITCH FEATURES • • • • • • • • • • • DESCRIPTION 96% Efficient Synchronous Boost Converter

MARKING BDR

Abstract: SLVS451
Contextual Info: TPS61020, TPS61024 TPS61025, TPS61027 3,25 mm x 3,25 mm www.ti.com SLVS451 – SEPTEMBER 2003 96% EFFICIENT SYNCHRONOUS BOOST CONVERTER WITH 1.5-A SWITCH FEATURES DESCRIPTION • 96% Efficient Synchronous Boost Converter – 200-mA Output Current From 0.9-V Input

LED IR for Tx, RX pair

Abstract: TFBS4711 TFBS4650 TFBS4652 TFBS6614 TFDU4100 TFDU4300 TFDU6102 TFDU8108 VFIR controller
Contextual Info: Reference Layouts and Circuit Diagrams Vishay Semiconductors Reference Layouts and Circuit Diagrams For testing and comparing test results a common base is necessary. The layout of a test board can have a quite big influence on parameters, especially on rise and fall time and also on jitter.

marking BDR

Abstract: 10SON
Contextual Info: TPS61020, TPS61024 TPS61025, TPS61027, TPS61028 3,25 mm x 3,25 mm www.ti.com SLVS451C – SEPTEMBER 2003 – REVISED JUNE 2005 96% EFFICIENT SYNCHRONOUS BOOST CONVERTER WITH 1.5-A SWITCH FEATURES • • • • • • • • • • • DESCRIPTION 96% Efficient Synchronous Boost Converter

VR41

Abstract: EPCOS 1400 09 O
Contextual Info: TPS61020, TPS61024, TPS61025 TPS61026, TPS61027, TPS61028 TPS61029 3,25 mm x 3,25 mm www.ti.com SLVS451D – SEPTEMBER 2003 – REVISED FEBRUARY 2006 96% EFFICIENT SYNCHRONOUS BOOST CONVERTER FEATURES 1 • 96% Efficient Synchronous Boost Converter • Output Voltage Remains Regulated When

schematic diagram atx Power supply 500w

Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455