SAMSUNG ST Search Results
SAMSUNG ST Datasheets Context Search
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Contextual Info: Samsung Samsung Secret Secret SAMSUNG QDRII+/DDRII+ 16Mb C-die Specification Change Notice July, 2008 Product Planning & Application Engineering Team MEMORY DIVISION SAMSUNG ELECTRONICS Co., LTD Product Product Planning Planning & & Application Application Eng. |
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K7K1636T2C K7K1618T2C 512Kx36 K7S1636T4C K7S1618T4C 1Mx18 11x15 | |
gddr3
Abstract: SAMSUNG LAPTOP SAMSUNG GDDR4 K4D263238 84 FBGA K4D55323 K4J52324Q samsung K4D261638 84FBGA
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512Mb 200Mhz 128Mb 8Mx16 K4D261638F-TC5A DS-06-GDRAM-001 gddr3 SAMSUNG LAPTOP SAMSUNG GDDR4 K4D263238 84 FBGA K4D55323 K4J52324Q samsung K4D261638 84FBGA | |
K9F2G08U0B
Abstract: K9HCG08U1M-PCB0 K9NCG08U5M-PCB0 K9F1G08U0C K9F4G08U0B-PCB0 K9F2G08U0B-PCB0 K9F4G08U0B K9WBG08U1M K9F1G08U0C-PCB0 K9G4G08U0B
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BR-09-ALL-001 K9F2G08U0B K9HCG08U1M-PCB0 K9NCG08U5M-PCB0 K9F1G08U0C K9F4G08U0B-PCB0 K9F2G08U0B-PCB0 K9F4G08U0B K9WBG08U1M K9F1G08U0C-PCB0 K9G4G08U0B | |
samsung ddr3
Abstract: DDR3 socket datasheet DDR3 jedec ddr2 laptop pin DDR3 DIMM 240 pin names "DDR3 SDRAM" DDR3 1gb dimm DDR3 DIMM DDR3 dimm socket DDR3 socket
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256MB 512Mb Samsun378B2873CZ0-C 128Mx8) 256Mx64 M378B5673CZ0-C DS-06-DRAM-006 samsung ddr3 DDR3 socket datasheet DDR3 jedec ddr2 laptop pin DDR3 DIMM 240 pin names "DDR3 SDRAM" DDR3 1gb dimm DDR3 DIMM DDR3 dimm socket DDR3 socket | |
single mode optical fiber 1550 nm
Abstract: Telcordia GR-20-CORE optical fiber cable G.652 GR-20-CORE samsung ribbon samsung ribbon vs Samsung tube tv G.652 samsung IEC793 Fiber low chromatic dispersion
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1130E, 1-877-ssoptic/1-877-776-7842 single mode optical fiber 1550 nm Telcordia GR-20-CORE optical fiber cable G.652 GR-20-CORE samsung ribbon samsung ribbon vs Samsung tube tv G.652 samsung IEC793 Fiber low chromatic dispersion | |
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Contextual Info: SPECIFICATION • Supplier : Samsung electro-mechanics • Samsung P/N: RC2012F*CS • Product : Thick - Film chip RESISTOR • Description : 2012, ±1%, 1Ω~1㏁ , 1/8W A. Samsung Part Number RC 2012 F * CS ① ③ ④ ⑤ ② ① Code designation Samsung Thick - Film Chip Resistor |
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RC2012F* 10seconds 100cycles, /30min 125/30min 000hours 90min 30min | |
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Contextual Info: SPECIFICATION • Supplier : Samsung electro-mechanics • Samsung P/N: RC2012G*CS • Product : Thick - Film chip RESISTOR • Description : 2012, ±2%, 1Ω~1㏁ , 1/8W A. Samsung Part Number RC 2012 G * CS ① ③ ④ ⑤ ② ① Code designation Samsung Thick - Film Chip Resistor |
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RC2012G* 10seconds 100cycles, /30min 125/30min 000hours 90min 30min | |
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Contextual Info: SPECIFICATION • Supplier : Samsung electro-mechanics • Samsung P/N: RC3216G*CS • Product : Thick - Film chip RESISTOR • Description : 3216, ±2%, 1Ω~1㏁ , 1/4W A. Samsung Part Number RC 3216 G * CS ① ③ ④ ⑤ ② ① Code designation Samsung Thick - Film Chip Resistor |
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RC3216G* 10seconds 100cycles, /30min 125/30min 000hours 90min 30min | |
10R1Contextual Info: SPECIFICATION • Supplier : Samsung electro-mechanics • Samsung P/N: RC3225F*CS • Product : Thick - Film chip RESISTOR • Description : 3225, ±1%, 1Ω~1㏁ , 1/3W A. Samsung Part Number RC 3225 F * CS ① ③ ④ ⑤ ② ① Code designation Samsung Thick - Film Chip Resistor |
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RC3225F* 10seconds 100cycles, /30min 125/30min 000hours 90min 30min 10R1 | |
RC3216F
Abstract: chip resistor 3216
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RC3216F* 10seconds 100cycles, /30min 125/30min 000hours 90min 30min RC3216F chip resistor 3216 | |
RESISTOR 5025Contextual Info: SPECIFICATION • Supplier : Samsung electro-mechanics • Samsung P/N: RC5025G*CS • Product : Thick - Film chip RESISTOR • Description : 5025, ±2%, 1Ω~1㏁ , 2/3W A. Samsung Part Number RC 5025 G * CS ① ③ ④ ⑤ ② ① Code designation Samsung Thick - Film Chip Resistor |
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RC5025G* 10seconds 100cycles, /30min 125/30min 000hours 90min 30min RESISTOR 5025 | |
RC5025FContextual Info: SPECIFICATION • Supplier : Samsung electro-mechanics • Samsung P/N: RC5025F*CS • Product : Thick - Film chip RESISTOR • Description : 5025, ±1%, 1Ω~1㏁ , 2/3W A. Samsung Part Number RC 5025 F * CS ① ③ ④ ⑤ ② ① Code designation Samsung Thick - Film Chip Resistor |
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RC5025F* 10seconds 100cycles, /30min 125/30min 000hours 90min 30min RC5025F | |
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Contextual Info: SPECIFICATION • Supplier : Samsung electro-mechanics • Samsung P/N: RC6432G*CS • Product : Thick - Film chip RESISTOR • Description : 6432, ±2%, 1Ω~1㏁ , 1W A. Samsung Part Number RC 6432 G * CS ① ③ ④ ⑤ ② ① Code designation Samsung Thick - Film Chip Resistor |
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RC6432G* 10seconds 100cycles, /30min 125/30min 000hours 90min 30min | |
resistor 6432
Abstract: samsung 6432
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RC6432J* 10seconds 100cycles, /30min 125/30min 000hours 90min 30min resistor 6432 samsung 6432 | |
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Contextual Info: SPECIFICATION • Supplier : Samsung electro-mechanics • Samsung P/N: RC3225G*CS • Product : Thick - Film chip RESISTOR • Description : 3225, ±2%, 1Ω~1㏁ , 1/3W A. Samsung Part Number RC 3225 G * CS ① ③ ④ ⑤ ② ① Code designation Samsung Thick - Film Chip Resistor |
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RC3225G* 10seconds 100cycles, /30min 125/30min 000hours 90min 30min | |
hard disk ATA pcb schematic
Abstract: samsung 1Gb nand flash SAMSUNG NAND FLASH K9F5608 K9F5608 intel nand flash K9F1G08 CF-CON50A flash chip 512mb NAND FLASH 64MB SAMSUNG DATASHEET CHIP CAPACITOR
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S3CI910X 256Mb 128MB hard disk ATA pcb schematic samsung 1Gb nand flash SAMSUNG NAND FLASH K9F5608 K9F5608 intel nand flash K9F1G08 CF-CON50A flash chip 512mb NAND FLASH 64MB SAMSUNG DATASHEET CHIP CAPACITOR | |
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Contextual Info: SPECIFICATION • Samsung P/N : CL31B333KCCNNWC Description : CAP, 33㎋, 100V, ±10%, X7R, 1206 Supplier : Samsung electro-mechanics Product : Multi-layer Ceramic Capacitor A. Samsung Part Number ① Series ② Size ③ Dielectric ④ Capacitance |
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CL31B333KCCNNWC 10sec. | |
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Contextual Info: SPECIFICATION • Samsung P/N : CL31B471KDCNFNC Description : CAP, 470㎊, 200V, ±10%, X7R, 1206 Supplier : Samsung electro-mechanics Product : Multi-layer Ceramic Capacitor A. Samsung Part Number ① Series ② Size ③ Dielectric ④ Capacitance |
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CL31B471KDCNFNC 10sec. | |
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Contextual Info: SPECIFICATION • Samsung P/N : CL31B222KDCNFNC Description : CAP, 2.2㎋, 200V, ±10%, X7R, 1206 Supplier : Samsung electro-mechanics Product : Multi-layer Ceramic Capacitor A. Samsung Part Number ① Series ② Size ③ Dielectric ④ Capacitance |
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CL31B222KDCNFNC 10sec. | |
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Contextual Info: SPECIFICATION • Supplier : Samsung electro-mechanics Product : Multi-layer Ceramic Capacitor Reference sheet Samsung P/N : CL31B223KGHNNNE Description : CAP, 22㎋, 500V, ±10%, X7R, 1206 A. Samsung Part Number ① Series ② Size ③ Dielectric |
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CL31B223KGHNNNE 48/-0hrs 10sec. | |
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Contextual Info: SPECIFICATION • Supplier : Samsung electro-mechanics Product : Multi-layer Ceramic Capacitor Samsung P/N : CL32C113JBHNNNF CAP, 11㎋, 50V, ±5%, C0G, 1210 Description : A. Samsung Part Number ① Series ② Size ③ Dielectric ④ Capacitance |
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CL32C113JBHNNNF 10sec. | |
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Contextual Info: SPECIFICATION • Samsung P/N : CL02A102KQ2NNNE Description : CAP, 1㎋, 6.3V, ±10%, X5R, 01005 Supplier : Samsung electro-mechanics Product : Multi-layer Ceramic Capacitor A. Samsung Part Number ① Series ② Size ③ Dielectric ④ Capacitance |
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CL02A102KQ2NNNE 12/-0hrs 10sec. | |
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Contextual Info: SPECIFICATION • Supplier : Samsung electro-mechanics Product : Multi-layer Ceramic Capacitor Samsung P/N : CL31C221JCCNNNC CAP, 220㎊, 100V, ±5%, C0G, 1206 Description : A. Samsung Part Number ① Series ② Size ③ Dielectric ④ Capacitance |
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CL31C221JCCNNNC 10sec. | |
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Contextual Info: SPECIFICATION • Supplier : Samsung electro-mechanics Samsung P/N : CL21A226KPCLRNC CAP, 22㎌, 10V, ±10%, X5R, 0805 Description : Product : Multi-layer Ceramic Capacitor A. Samsung Part Number ① Series ② Size ③ Dielectric ④ Capacitance |
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CL21A226KPCLRNC 12/-0hrs 48/-0hrs 10sec. | |