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    SAMSUNG NAND FLASH BGA Search Results

    SAMSUNG NAND FLASH BGA Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TC4011BP
    		Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, 2-Input/NAND, DIP14 Datasheet
    TC4093BP
    		Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, 2-Input/NAND, DIP14 Datasheet
    TC74HC00AP
    		Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, Quad 2-Input/NAND, DIP14 Datasheet
    7UL1G00NX
    		Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), 2-Input/NAND, XSON6, -40 to 125 degC Datasheet
    TC7SET00F
    		Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), 2-Input/NAND, SOT-25 (SMV), -40 to 125 degC Datasheet

    SAMSUNG NAND FLASH BGA Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    SAMSUNG NAND FLASH

    Abstract: Samsung 256 Gbit nand NAND01G cache program Samsung k9f1208u K9F1208U0M NAND FLASH BGA Samsung Nand tbga 6x8 Package WSOP48 bga 6x8
    Contextual Info: AN1838 APPLICATION NOTE How to Use a Small Page ST NAND Flash Memory in an Application Designed for a Samsung Device This Application Note describes how to use a Small Page 528 Byte/264 Word Page STMicroelectronics NAND Flash memory, to replace an equivalent Samsung memory, in an application initially designed for


    Original     		AN1838 Byte/264 NAND128-A, NAND256-A, NAND512-A, NAND01G-A, 128Mbits SAMSUNG NAND FLASH Samsung 256 Gbit nand NAND01G cache program Samsung k9f1208u K9F1208U0M NAND FLASH BGA Samsung Nand tbga 6x8 Package WSOP48 bga 6x8 PDF

    SAMSUNG moviNAND

    Abstract: marking date code samsung semiconductor NAND FLASH QDP movinand DECODER SLC nand hamming code 512 bytes 48 TSOP1 1220F samsung 128G nand flash NAND Flash Code Information date code marking samsung Nand K9F2808U0C-PCB0
    Contextual Info: FLASH MEMORY K9F2808U0C Document Title 16M x 8 Bit NAND Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial issue. Apr. 15th 2002 Advance 1.0 TBGA PKG Dimension Change 48-Ball, 6.0mm x 8.5mm -> 63-Ball, 9.0mm x 11.0mm Sep. 5th 2002


    Original     		K9F2808U0C 48-Ball, 63-Ball, K9F28XXQ0C K9F2808U0C-FCB0 K9F2808Q0C-HCB0 K9F2816U0C-HCB0 K9F2816U0C-PCB0 K9F2816Q0C-HCB0 K9F2808U0C-HCB0 SAMSUNG moviNAND marking date code samsung semiconductor NAND FLASH QDP movinand DECODER SLC nand hamming code 512 bytes 48 TSOP1 1220F samsung 128G nand flash NAND Flash Code Information date code marking samsung Nand K9F2808U0C-PCB0 PDF

    SAMSUNG MCp

    Abstract: samsung NAND FLASH BGA SAMSUNG 128Mb NAND Flash Qualification Reliability
    Contextual Info: Preliminary MCP MEMORY K5P5781FCM Document Title Multi-Chip Package MEMORY 256M Bit 16Mx16 Nand Flash Memory / 8M Bit (512Kx16) Full CMOS SRAM Revision History Revision No. History Draft Date Remark 0.0 Initial draft. April 18, 2003 Preliminary 0.1 Revised


    Original     		K5P5781FCM 16Mx16) 512Kx16) 100pF 10nsCC 69-Ball SAMSUNG MCp samsung NAND FLASH BGA SAMSUNG 128Mb NAND Flash Qualification Reliability PDF

    SAMSUNG MCP

    Abstract: MCP NAND
    Contextual Info: Preliminary MCP MEMORY K5P2881BCM Document Title Multi-Chip Package MEMORY 128M Bit 16Mx8 Nand Flash Memory / 8M Bit (512Kx16) Full CMOS SRAM Revision History Revision No. History Draft Date Remark 0.0 Initial draft. - 128M NAND Flash C-die - 8M SRAM B-die


    Original     		K5P2881BCM 16Mx8) 512Kx16) 69-Ball SAMSUNG MCP MCP NAND PDF

    reset nand flash HYNIX

    Abstract: hynix mcp hynix nand PROGRAMMING hynix NAND ECC hynix nand spare area hynix nand Hynix E NAND hynix nand 2G nand flash HYNIX 1gb toshiba mcp nand
    Contextual Info: S30MS01GP and 1Gbit NAND Comparison Application Note by Chris Brewster 1. Introduction Spansion ORNAND devices are designed to have either an NOR or NAND interface. ORNAND serves as a complement to XIP NOR flash memory if NOR interface is chosen; it serves as replacement for raw NAND for


    Original     		S30MS01GP reset nand flash HYNIX hynix mcp hynix nand PROGRAMMING hynix NAND ECC hynix nand spare area hynix nand Hynix E NAND hynix nand 2G nand flash HYNIX 1gb toshiba mcp nand PDF

    SAMSUNG MCP

    Abstract: MCP MEMORY dQ8F SAMSUNG MCP Qualification Report MCP NAND SAMSUNG 256Mb mcp Qualification Reliability SAMSUNG 256Mb NAND Flash Qualification Reliability UtRAM Density MCP Samsung SAMSUNG NOR Flash Qualification Report
    Contextual Info: Preliminary MCP MEMORY KBC00B7A0M Document Title Multi-Chip Package MEMORY 256M Bit 16Mx16 Nand Flash Memory / 64M Bit (4Mx16) UtRAM / 64M Bit (4Mx16) UtRAM / 8M Bit (512Kx16) SRAM Revision History Revision No. History Draft Date Remark 0.0 Initial draft.


    Original     		KBC00B7A0M 16Mx16) 4Mx16) 512Kx16) 100pF 111-Ball SAMSUNG MCP MCP MEMORY dQ8F SAMSUNG MCP Qualification Report MCP NAND SAMSUNG 256Mb mcp Qualification Reliability SAMSUNG 256Mb NAND Flash Qualification Reliability UtRAM Density MCP Samsung SAMSUNG NOR Flash Qualification Report PDF

    KLM8G2FEJA-A001

    Abstract: KLMAG4FEJA-A001 KLM8G2FEJA KLMBG8FEJA-A001 KLMAG4FEJA-B001 klm8g samsung eMMC 4.5 Samsung eMMC 4.41 KLMXGXFEJA-X001 KLMCGAFEJA-B001
    Contextual Info: Hello All, 8/16/32GB 27nm eMMC parts are now available to sample CS type ! Please input sample requests for all customers using old generations of moviNAND now. We'll expedite for ASAP delivery. SEC will ramp 27nm production quickly so it is imperative that all customers get qualified ASAP.


    Original     		8/16/32GB KLMXGXFEJA-X001 KLM8G2FEJA-A001 KLMAG4FEJA-A001 KLM8G2FEJA KLMBG8FEJA-A001 KLMAG4FEJA-B001 klm8g samsung eMMC 4.5 Samsung eMMC 4.41 KLMCGAFEJA-B001 PDF

    K8D3216UBC-pi07

    Abstract: K5E5658HCM KAD070J00M KBH10PD00M K5D1257ACM-D090000 samsung ddr2 ram MTBF KBB05A500A K801716UBC k5d1g13acm k5a3281ctm
    Contextual Info: Product Selection Guide Memory and Storage April 2005 MEMORY AND STORAGE SECTION A DRAM DDR2 SDRAM DDR SDRAM SDRAM RDRAM NETWORK DRAM MOBILE SDRAM GRAPHICS DDR SDRAM DRAM ORDERING INFORMATION FLASH NAND, OneNAND, NOR FLASH NAND FLASH ORDERING INFORMATION SRAM


    Original     		BR-05-ALL-002 K8D3216UBC-pi07 K5E5658HCM KAD070J00M KBH10PD00M K5D1257ACM-D090000 samsung ddr2 ram MTBF KBB05A500A K801716UBC k5d1g13acm k5a3281ctm PDF

    K9F2G08U0B

    Abstract: K9HCG08U1M-PCB0 K9NCG08U5M-PCB0 K9F1G08U0C K9F4G08U0B-PCB0 K9F2G08U0B-PCB0 K9F4G08U0B K9WBG08U1M K9F1G08U0C-PCB0 K9G4G08U0B
    Contextual Info: Samsung Semiconductor, Inc. Product Selection Guide Memory and Storage January 2009 Samsung Semiconductor, Inc. Samsung offers the industry’s broadest memory portfolio and has maintained its leadership in memory technology for 16 straight years. Its DRAM, flash and SRAM


    Original     		BR-09-ALL-001 K9F2G08U0B K9HCG08U1M-PCB0 K9NCG08U5M-PCB0 K9F1G08U0C K9F4G08U0B-PCB0 K9F2G08U0B-PCB0 K9F4G08U0B K9WBG08U1M K9F1G08U0C-PCB0 K9G4G08U0B PDF

    Samsung k9f1208uom

    Abstract: K9F1208UOM k9f1208uo tsop sensor 512MB NOR FLASH samsung FLASH BGA 512MB SRAM "NOR Flash" 512MB samsung NAND Flash DIE NAND FLASH BGA
    Contextual Info: Data Sheet Part No. ISNF128M16LTC Irvine Sensors Corporation Microelectronics Products Division 2 Gigabit 128M x 16 FLASH Memory Stack Features: q q Low Profile, Same PCB area as a single


    Original     		ISNF128M16LTC 512Mbit 512MB Samsung k9f1208uom K9F1208UOM k9f1208uo tsop sensor 512MB NOR FLASH samsung FLASH BGA 512MB SRAM "NOR Flash" 512MB samsung NAND Flash DIE NAND FLASH BGA PDF

    K9F2G08U0B-PCB0

    Abstract: samsung K9 flash Toggle DDR NAND flash K9F2G08U0B-PIB0 K9F2G08U0B samsung 128G nand flash movinand DECODER Samsung EOL K9F2G08U0B-PIB00 samsung toggle mode NAND
    Contextual Info: SAMSUNG's Digital World go contents Flash ● ● ● ● ● NAND Flash ❍ Products ❍ EOL Products Toggle DDR NAND Flash ❍ Products Flash SSD NOR Flash ❍ Products ❍ EOL Products Flash Cards ❍ Products ❍ EOL Products Product Search ● ● ●


    Original     		K9F2G08U0B 07-Sep-2010 K9F2G08U0B-PCB0 samsung K9 flash Toggle DDR NAND flash K9F2G08U0B-PIB0 samsung 128G nand flash movinand DECODER Samsung EOL K9F2G08U0B-PIB00 samsung toggle mode NAND PDF

    SAMSUNG MCP

    Abstract: samsung toggle mode NAND ba7810 BA102 NAND FLASH BGA UtRAM Density BA5101 BA340 BGA-60
    Contextual Info: SEC Only MCP MEMORY KAB0xD100M - TxGP Document Title Multi-Chip Package MEMORY 64M Bit 8Mx8/4Mx16 Dual Bank NOR Flash / 128M Bit (8Mx16) NAND Flash / 32M Bit (2Mx16) UtRAM Revision History Revision No. History Draft Date Remark 0.0 Initial Draft March 20, 2002


    Original     		KAB0xD100M 8Mx8/4Mx16) 8Mx16) 2Mx16) 39page) 43page) 80-Ball SAMSUNG MCP samsung toggle mode NAND ba7810 BA102 NAND FLASH BGA UtRAM Density BA5101 BA340 BGA-60 PDF

    toshiba onenand

    Abstract: toshiba emmc 4.4 Toshiba 512 NAND MLC FLASH BGA movinand emmc MICRON oneNAND micron emmc Toshiba emmc movinand micron emmc 4.3 fuse n20
    Contextual Info: Freescale Semiconductor Application Note Document Number: AN3684 Rev. 0, 06/2009 i.MX25 Boot Options by Multimedia and Applications Division Freescale Semiconductor, Inc. Austin, TX This document describes the boot options for the i.MX25 device. For more in-depth details about how the boot


    Original     		AN3684 MCIMX25RM) toshiba onenand toshiba emmc 4.4 Toshiba 512 NAND MLC FLASH BGA movinand emmc MICRON oneNAND micron emmc Toshiba emmc movinand micron emmc 4.3 fuse n20 PDF

    16GB Nand flash dual channel

    Abstract: samsung 16GB Nand flash AUSTIN SEMICONDUCTOR pata chips ssd hdd device AB22-AB23 AC18-AC19
    Contextual Info: AUSTIN SEMICONDUCTOR, INC. SOLID PRELIMINARY Austin Semiconductor, Inc. Solid State Disk On Chip SSDoC ST ATE DISK STA AS3SSD4GB8PBG AS3SSD8GB8PBG AS3SSD16GB5PBG FEATURES • Capacities - 4 GB - 8 GB - 16 GB • PATA Compatibility - ATA-5 compatible - UDMA4 supported


    Original     		AS3SSD16GB5PBG AS3SSD16GB5PBG 16GB Nand flash dual channel samsung 16GB Nand flash AUSTIN SEMICONDUCTOR pata chips ssd hdd device AB22-AB23 AC18-AC19 PDF

    "Manufacturer ID" eMMC

    Abstract: emmc EXT_CSD emmc "boot mode" eMMC emmc pin EXT_CSD samsung emmc boot efuse emmc boot Samsung oneNand Mux
    Contextual Info: Freescale Semiconductor Application Note Document Number: AN3996 Rev. 0, 04/2010 i.MX35 Boot Options by Multimedia Applications Division Freescale Semiconductor, Inc. Austin, TX 1 Introduction This application note describes the different booting options available for the i.MX35 processor. The i.MX35 offers


    Original     		AN3996 "Manufacturer ID" eMMC emmc EXT_CSD emmc "boot mode" eMMC emmc pin EXT_CSD samsung emmc boot efuse emmc boot Samsung oneNand Mux PDF

    SAMSUNG MCP

    Abstract: KBB05A500 transistor BA29 BA102 NAND FLASH BGA transistor ba47 Pre-programming nand samsung UtRAM Density BA841 BGA-100
    Contextual Info: KBB0xA500M - T402 MCP MEMORY Document Title Multi-Chip Package MEMORY 64M Bit 8Mx8/4Mx16 Dual Bank NOR Flash *2 / 128M Bit (8Mx16) NAND Flash / 64M Bit (4Mx16) UtRAM Revision History Revision No. History Draft Date Remark 0.0 Initial Draft October 15, 2002


    Original     		KBB0xA500M 8Mx8/4Mx16) 8Mx16) 4Mx16) 150uA 100uA 200uA 80-Ball 80x12 SAMSUNG MCP KBB05A500 transistor BA29 BA102 NAND FLASH BGA transistor ba47 Pre-programming nand samsung UtRAM Density BA841 BGA-100 PDF

    KBB0XA300M

    Abstract: transistor ba47 SAMSUNG MCP BA108 BA102 BA99 NAND FLASH BGA BGA34 BGA22 t402
    Contextual Info: Preliminary MCP MEMORY KBB0xA300M - T402 Document Title Multi-Chip Package MEMORY 64M Bit 8Mx8/4Mx16 Dual Bank NOR Flash *2 / 128M Bit (8Mx16) NAND Flash / 32M Bit (2Mx16) UtRAM Revision History Revision No. History Draft Date Remark October 15, 2002 Preliminary


    Original     		KBB0xA300M 8Mx8/4Mx16) 8Mx16) 2Mx16) 80-Ball 80x12 transistor ba47 SAMSUNG MCP BA108 BA102 BA99 NAND FLASH BGA BGA34 BGA22 t402 PDF

    K9F1208UOM

    Abstract: k9f1208uo Samsung k9f1208uom tsop sensor Mitsubishi part numbering samsung FLASH BGA 512M x 8 Bit NAND Flash Memory TOSHIBA part numbering micron NAND FLASH BGA toshiba Nand part numbering
    Contextual Info: Data Sheet Part No. ISNF64M16LTC Irvine Sensors Corporation Microelectronics Products Division 1 Gigabit FLASH Memory Stack Features: q q Low Profile, Same PCB area as a single


    Original     		ISNF64M16LTC 512Mbit K9F1208UOM k9f1208uo Samsung k9f1208uom tsop sensor Mitsubishi part numbering samsung FLASH BGA 512M x 8 Bit NAND Flash Memory TOSHIBA part numbering micron NAND FLASH BGA toshiba Nand part numbering PDF

    tsop sensor

    Abstract: TSOP 54 PIN footprint K4S280832 ISSD16M16STC tsop sensors 256 pin bga pinout Irvine Sensors
    Contextual Info: Data Sheet Part No. ISSD16M16STC Irvine Sensors Corporation Microelectronics Products Division 256 Mbit 16M x 16 Synchronous DRAM Memory Stack Features: q Low Profile: same PCB footprint as a


    Original     		ISSD16M16STC tsop sensor TSOP 54 PIN footprint K4S280832 ISSD16M16STC tsop sensors 256 pin bga pinout Irvine Sensors PDF

    tsop sensor

    Abstract: K4S560432
    Contextual Info: Data Sheet Part No. ISSD64M8LTB Irvine Sensors Corporation Microelectronics Products Division 512 Mbit 64M x 8 Synchronous DRAM Memory Stack Features: q Low Profile: same PCB footprint as a


    Original     		ISSD64M8LTB tsop sensor K4S560432 PDF

    ISSD64M4STB

    Abstract: EDO sdram stc 3001
    Contextual Info: Data Sheet Part No. ISSD64M4STB Irvine Sensors Corporation Microelectronics Products Division 256 Mbit 64M x 4 Synchronous DRAM Memory Stack Features: q q Low Profile: same PCB footprint as a


    Original     		ISSD64M4STB ISSD64M4STB EDO sdram stc 3001 PDF

    K4S641632

    Abstract: samsung k4s641632 SAMSUNG TSOP ISSD8M16STD
    Contextual Info: Short Form Data Sheet Part No. ISSD8M16STD Irvine Sensors Corporation Microelectronics Products Division 128 Mbit 8M x 16 Synchronous DRAM Memory Stack Features:


    Original     		ISSD8M16STD K4S641632 samsung k4s641632 SAMSUNG TSOP ISSD8M16STD PDF

    tsop sensor

    Abstract: tsop sensors Mitsubishi part numbering micron nor Flash
    Contextual Info: Data Sheet Part No. ISSD16M8STB Irvine Sensors Corporation Microelectronics Products Division 128 Mbit 16M x 8 Synchronous DRAM Memory Stack Features: q Low Profile: same PCB footprint as a


    Original     		ISSD16M8STB tsop sensor tsop sensors Mitsubishi part numbering micron nor Flash PDF

    Xilinx lcd display controller design

    Abstract: CS4343 FL_CE_N FL_CE_N code XC2S50 driver XC1801 perceptual audio KM29U64000T RC32364 IDT bn marking diagram
    Contextual Info: 03 1*  $ 1H[W 1H[ W *HQHU HQHUDWLRQ &RQVX &RQVXP VXPHU 3ODWI DWIRUP 1RWHV $SSOLFD OLFDWLRQ 1RWH $1 ,QWU ,QWURGXFWLRQ This application note illustrates the use of Spartan FPGA and an IDT RC32364 RISC ontroller CPU in a handheld consumer electronics platform. Specifically the target application is an MP3 audio player with


    Original     		RC32364 SED1743 160-bit SED1758 CS4343 MAX1108 USBN9602 MT48LC1M16A1 KM29U64000T Xilinx lcd display controller design FL_CE_N FL_CE_N code XC2S50 driver XC1801 perceptual audio IDT bn marking diagram PDF