SAMSUNG ELECTRONICS. NAND FLASH MEMORY Search Results
SAMSUNG ELECTRONICS. NAND FLASH MEMORY Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
---|---|---|---|---|---|
GCM033C71A104KE02J | Murata Manufacturing Co Ltd | 0201 (0603M) X7S (EIA) 10Vdc 0.1μF±10% | |||
GCM188N8EA226ME08D | Murata Manufacturing Co Ltd | 0603 (1608M) X8N(MURATA) 2.5Vdc 22μF±20% | |||
GRT155R60J106ME13D | Murata Manufacturing Co Ltd | 0402 (1005M) X5R (EIA) 6.3Vdc 10μF±20% | |||
KR355WD7LG274MH01L | Murata Manufacturing Co Ltd | X7T (EIA) 1250Vdc 0.27μF±20% | |||
KR355WD7LF474MH01L | Murata Manufacturing Co Ltd | X7T (EIA) 1000Vdc 0.47μF±20% |
SAMSUNG ELECTRONICS. NAND FLASH MEMORY Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
---|---|---|---|
74lvc3245
Abstract: SAMSUNG NAND FLASH SAMSUNG NAND FLASH TRANSLATION LAYER samsung NAND date code marking samsung Nand "bad block" smartmedia ecc SAMSUNG NAND FLASH TRANSLATION LAYER FTL samsung hdd f3 SmartMedia Logical Format SAMSUNG NAND FTL
|
Original |
128MB 0000h 0001h 0002h 12bit 16bit 74lvc3245 SAMSUNG NAND FLASH SAMSUNG NAND FLASH TRANSLATION LAYER samsung NAND date code marking samsung Nand "bad block" smartmedia ecc SAMSUNG NAND FLASH TRANSLATION LAYER FTL samsung hdd f3 SmartMedia Logical Format SAMSUNG NAND FTL | |
SAMSUNG NAND Flash Qualification Report
Abstract: SAMSUNG 128Mb NAND Flash Qualification Reliability NAND "read disturb" Samsung NAND Qualification Reliability NAND Flash Qualification Reliability NAND qualification NAND read disturb 63-TBGA K9F2808U0C-YCB0 K9F2808U0C-YIB0
|
Original |
128Mb industria1980 30pcs 48TSOP1 SAMSUNG NAND Flash Qualification Report SAMSUNG 128Mb NAND Flash Qualification Reliability NAND "read disturb" Samsung NAND Qualification Reliability NAND Flash Qualification Reliability NAND qualification NAND read disturb 63-TBGA K9F2808U0C-YCB0 K9F2808U0C-YIB0 | |
K9HCG08U5M
Abstract: K9WBG08U1M K9LAG08U0M-PCB0 KMAFN0000M KMBGN0000A K9MDG08U5M-PCB0 K4M56323PI MCCOE32GQMPQ-M K4M56163PI movinand
|
OCR Scan |
120GB 128MB 256MB 128MB 512MB K9HCG08U5M K9WBG08U1M K9LAG08U0M-PCB0 KMAFN0000M KMBGN0000A K9MDG08U5M-PCB0 K4M56323PI MCCOE32GQMPQ-M K4M56163PI movinand | |
Contextual Info: FLASH MEMORY K9K2G08U0A Document Title 256M x 8 Bit NAND Flash Memory Revision History Revision No 0.0 History Draft Date Remark 1. Initial issue May. 31. 2004 Advance The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the |
Original |
K9K2G08U0A K9K2G08U0A-Y K9K2G08U0A-V K9K2G08U0A | |
KM29W32000AIT
Abstract: KM29N32000 400F KM29W32000AT flash row column read write "program and data" 19 Resister 0805 samsung
|
Original |
KM29W32000AT, KM29W32000AIT KM29V32000 KM29N32000 KM29W32000 KM29W32000AIT KM29N32000 400F KM29W32000AT flash row column read write "program and data" 19 Resister 0805 samsung | |
Contextual Info: Preliminary FLASH MEMORY KM29W16000BTS Document Title 2M x 8 Bit NAND Flash Memory Revision History Revision No. History 0.0 Initial issue. Draft Date Remark April 10th 1999 Preliminary The attached datasheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right |
Original |
KM29W16000BTS | |
KM29W16000BIT
Abstract: 400F KM29W16000BT
|
Original |
KM29W16000BT, KM29W16000BIT KM29W16000BIT 400F KM29W16000BT | |
KM29W32000ATSContextual Info: KM29W32000ATS Advance Information FLASH MEMORY Document Title 4M x 8 Bit NAND Flash Memory Revision History Revision No. History 0.0 Initial issue. Draft Date Remark April 10th 1998 Advance The attached datasheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right |
Original |
KM29W32000ATS KM29W32000ATS | |
KM29U128AIT
Abstract: KM29U128AT NAND flash memory
|
Original |
KM29U128AT, KM29U128AIT KM29U128AA16M 48-pin KM29U128AIT KM29U128AT NAND flash memory | |
Contextual Info: KM29U64000AT, KM29U64000AIT Preliminary FLASH MEMORY Document Title 8M x 8 Bit NAND Flash Memory Revision History Revision No. History 0.0 Initial issue. Draft Date Remark April 10th 1999 Preliminary The attached datasheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the |
Original |
KM29U64000AT, KM29U64000AIT | |
29V040Contextual Info: KM29V040T, KM29V040IT FLASH MEMORY Document Title 512K x 8 Bit NAND Flash Memory Revision History Ftevfrfon Np, History Draft Date 0.0 Data Sheet 1997. April 10th 1997 1.0 Data Sheet 1998. April 10th 1998 Remark The attached datasheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right |
OCR Scan |
KM29V040T, KM29V040IT 29V040 | |
K9F4G08U0M
Abstract: K9F4G08U 52-ULGA 52ULGA K9K8G08U1M K9F4G08U0M-ICB0 K9F4G08 81h-10h K9F4G08U0M-YCB
|
Original |
K9K8G08U1M K9F4G08U0M K9F4G08U0M-Y K9F4G08U0M K9F4G08U 52-ULGA 52ULGA K9K8G08U1M K9F4G08U0M-ICB0 K9F4G08 81h-10h K9F4G08U0M-YCB | |
KM29W16000AIT
Abstract: KM29W16000AT
|
Original |
KM29W16000AT, KM29W16000AIT KM29W16000AIT KM29W16000AT | |
KM29W16000ATSContextual Info: KM29W16000ATS FLASH MEMORY Document Title 2M x 8 Bit NAND Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial issue. April 10th 1998 Preliminary 1.1 Data Sheet 1998. July 14th 1998 Final The attached datasheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right |
Original |
KM29W16000ATS KM29W16000ATS | |
|
|||
K9F1G08
Abstract: K9F1G08U0A K9F1G08X0A K9F1G08Q0A ADD12 K9F1G08D0A-Y
|
Original |
K9F1G08Q0A K9F1G08D0A K9F1G08U0A K9F1G08Q0A-Y K9F1G08 K9F1G08U0A K9F1G08X0A K9F1G08Q0A ADD12 K9F1G08D0A-Y | |
400F
Abstract: KM29N32000 KM29W32000TS
|
Original |
KM29W32000TS KM29V32000 KM29N32000 KM29W32000 400F KM29N32000 KM29W32000TS | |
Contextual Info: FLASH MEMORY KM29W32000T, KM29W32000IT 4M X 8 Bit NAND Flash Mem ory History D raft Date R e m a rk 0.0 Initial issue. April 10th 1998 Preliminary 1.0 Data Sheet, 1998 July 14th 1998 Final Revision No. The attached datasheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right |
OCR Scan |
KM29W32000T, KM29W32000IT KM29V32000 KM29N32000 KM29W32000 | |
Contextual Info: KM29W16000AT, KM29W16000AIT FLASH MEMORY Document Title 2M x 8 Bit NAND Flash Memory Revision History Revision No. H istory Draft Date Rem ark 0.0 Initial issue. April 10th 1998 Preliminary 1.1 Data Sheet 1998. July 14th 1998 Final The attached datasheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right |
OCR Scan |
KM29W16000AT, KM29W16000AIT | |
KM29U64000IT
Abstract: KM29U64000T 400F
|
Original |
KM29U64000T, KM29U64000IT KM29U64000IT KM29U64000T 400F | |
KM29N040
Abstract: KM29V040IT KM29V040T km29v040
|
Original |
KM29V040T, KM29V040IT KM29N040 KM29V040IT KM29V040T km29v040 | |
PCMCIA FLASH CARD 10MB
Abstract: S3C49F9X flashdisk controller Interfacing Flash Disk samsung 1Gb nand flash S3C49 compact flash controller
|
Original |
S3C49F9X 512Mbit 35-um 100TQFP 100-pin PCMCIA FLASH CARD 10MB flashdisk controller Interfacing Flash Disk samsung 1Gb nand flash S3C49 compact flash controller | |
S3C49F9X
Abstract: 432t
|
Original |
S3C49F9X S3C49F9X 512Mbit 35-um 100-TQFP 100-pin 432t | |
"nand flash memory"
Abstract: KM29N040 KM29N040IT KM29N040T
|
Original |
KM29N040T, KM29N040IT "nand flash memory" KM29N040 KM29N040IT KM29N040T | |
2048-Bits
Abstract: P128 P256 P512 P1024P1024 nand flash
|
Original |
256bytes 22bit 2048bits 16bit 2048-Bits P128 P256 P512 P1024P1024 nand flash |