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    SAMSUNG ELECTRONICS. NAND FLASH MEMORY Search Results

    SAMSUNG ELECTRONICS. NAND FLASH MEMORY Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    GCM033C71A104KE02J
    Murata Manufacturing Co Ltd 0201 (0603M) X7S (EIA) 10Vdc 0.1μF±10% PDF
    GCM188N8EA226ME08D
    Murata Manufacturing Co Ltd 0603 (1608M) X8N(MURATA) 2.5Vdc 22μF±20% PDF
    GRT155R60J106ME13D
    Murata Manufacturing Co Ltd 0402 (1005M) X5R (EIA) 6.3Vdc 10μF±20% PDF
    KR355WD7LG274MH01L
    Murata Manufacturing Co Ltd X7T (EIA) 1250Vdc 0.27μF±20% PDF
    KR355WD7LF474MH01L
    Murata Manufacturing Co Ltd X7T (EIA) 1000Vdc 0.47μF±20% PDF

    SAMSUNG ELECTRONICS. NAND FLASH MEMORY Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    74lvc3245

    Abstract: SAMSUNG NAND FLASH SAMSUNG NAND FLASH TRANSLATION LAYER samsung NAND date code marking samsung Nand "bad block" smartmedia ecc SAMSUNG NAND FLASH TRANSLATION LAYER FTL samsung hdd f3 SmartMedia Logical Format SAMSUNG NAND FTL
    Contextual Info: Confidential SAMSUNG NAND FLASH APPLICATION NOTE Software Driver of SmartMedia TM (Ver 3.0) MEMORY PRODUCT & TECHNOLOGY SAMSUNG ELECTRONICS Co., LTD 1 ELECTRONICS Confidential SAMSUNG NAND FLASH Revision History Revision Date Name 1.0 1.1 2.0 98/12/10 99/03/04


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    128MB 0000h 0001h 0002h 12bit 16bit 74lvc3245 SAMSUNG NAND FLASH SAMSUNG NAND FLASH TRANSLATION LAYER samsung NAND date code marking samsung Nand "bad block" smartmedia ecc SAMSUNG NAND FLASH TRANSLATION LAYER FTL samsung hdd f3 SmartMedia Logical Format SAMSUNG NAND FTL PDF

    SAMSUNG NAND Flash Qualification Report

    Abstract: SAMSUNG 128Mb NAND Flash Qualification Reliability NAND "read disturb" Samsung NAND Qualification Reliability NAND Flash Qualification Reliability NAND qualification NAND read disturb 63-TBGA K9F2808U0C-YCB0 K9F2808U0C-YIB0
    Contextual Info: SAMSUNG 128Mb NAND Flash Qualification & Reliability Report [ 128Mb NAND Flash C-die ] September, 2003 Rev. 01 Memory Quality Assurance The information contained in this document is proprietary to Samsung Electronics Co., Ltd. and shall be protected from any reproduction in part or as a whole without Samsung`s written approval.


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    128Mb industria1980 30pcs 48TSOP1 SAMSUNG NAND Flash Qualification Report SAMSUNG 128Mb NAND Flash Qualification Reliability NAND "read disturb" Samsung NAND Qualification Reliability NAND Flash Qualification Reliability NAND qualification NAND read disturb 63-TBGA K9F2808U0C-YCB0 K9F2808U0C-YIB0 PDF

    K9HCG08U5M

    Abstract: K9WBG08U1M K9LAG08U0M-PCB0 KMAFN0000M KMBGN0000A K9MDG08U5M-PCB0 K4M56323PI MCCOE32GQMPQ-M K4M56163PI movinand
    Contextual Info: SAMSUNG Mobile Memory C ontents NAND Flash NOR Flash One NAND Mobile DRAM movi NAND™ SSD Multi Media Card Living in NAND Flash world Living in the stage of 20GB memory after passing through the dark-age of 1GB in 2002, the mobile & consumer electronics now start to feel the needs


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    120GB 128MB 256MB 128MB 512MB K9HCG08U5M K9WBG08U1M K9LAG08U0M-PCB0 KMAFN0000M KMBGN0000A K9MDG08U5M-PCB0 K4M56323PI MCCOE32GQMPQ-M K4M56163PI movinand PDF

    Contextual Info: FLASH MEMORY K9K2G08U0A Document Title 256M x 8 Bit NAND Flash Memory Revision History Revision No 0.0 History Draft Date Remark 1. Initial issue May. 31. 2004 Advance The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the


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    K9K2G08U0A K9K2G08U0A-Y K9K2G08U0A-V K9K2G08U0A PDF

    KM29W32000AIT

    Abstract: KM29N32000 400F KM29W32000AT flash row column read write "program and data" 19 Resister 0805 samsung
    Contextual Info: KM29W32000AT, KM29W32000AIT FLASH MEMORY Document Title 4M x 8 Bit NAND Flash Memory Revision History Revision No. History 0.0 Initial issue. Draft Date Remark April 10th 1998 Advance The attached datasheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right


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    KM29W32000AT, KM29W32000AIT KM29V32000 KM29N32000 KM29W32000 KM29W32000AIT KM29N32000 400F KM29W32000AT flash row column read write "program and data" 19 Resister 0805 samsung PDF

    Contextual Info: Preliminary FLASH MEMORY KM29W16000BTS Document Title 2M x 8 Bit NAND Flash Memory Revision History Revision No. History 0.0 Initial issue. Draft Date Remark April 10th 1999 Preliminary The attached datasheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right


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    KM29W16000BTS PDF

    KM29W16000BIT

    Abstract: 400F KM29W16000BT
    Contextual Info: KM29W16000BT, KM29W16000BIT Preliminary FLASH MEMORY Document Title 2M x 8 Bit NAND Flash Memory Revision History Revision No. History 0.0 Initial issue. Draft Date Remark April 10th 1999 Preliminary The attached datasheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right


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    KM29W16000BT, KM29W16000BIT KM29W16000BIT 400F KM29W16000BT PDF

    KM29W32000ATS

    Contextual Info: KM29W32000ATS Advance Information FLASH MEMORY Document Title 4M x 8 Bit NAND Flash Memory Revision History Revision No. History 0.0 Initial issue. Draft Date Remark April 10th 1998 Advance The attached datasheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right


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    KM29W32000ATS KM29W32000ATS PDF

    KM29U128AIT

    Abstract: KM29U128AT NAND flash memory
    Contextual Info: Advanced Information FLASH MEMORY KM29U128AT, KM29U128AIT Document Title 16M x 8 Bit NAND Flash Memory Revision History Revision No. History 0.0 Initial issue. Draft Date Remark April 10th 1999 Advanced Information The attached datasheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right


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    KM29U128AT, KM29U128AIT KM29U128AA16M 48-pin KM29U128AIT KM29U128AT NAND flash memory PDF

    Contextual Info: KM29U64000AT, KM29U64000AIT Preliminary FLASH MEMORY Document Title 8M x 8 Bit NAND Flash Memory Revision History Revision No. History 0.0 Initial issue. Draft Date Remark April 10th 1999 Preliminary The attached datasheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the


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    KM29U64000AT, KM29U64000AIT PDF

    29V040

    Contextual Info: KM29V040T, KM29V040IT FLASH MEMORY Document Title 512K x 8 Bit NAND Flash Memory Revision History Ftevfrfon Np, History Draft Date 0.0 Data Sheet 1997. April 10th 1997 1.0 Data Sheet 1998. April 10th 1998 Remark The attached datasheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right


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    KM29V040T, KM29V040IT 29V040 PDF

    K9F4G08U0M

    Abstract: K9F4G08U 52-ULGA 52ULGA K9K8G08U1M K9F4G08U0M-ICB0 K9F4G08 81h-10h K9F4G08U0M-YCB
    Contextual Info: Advance FLASH MEMORY K9K8G08U1M K9F4G08U0M Document Title 512M x 8 Bits / 1G x 8 Bits NAND Flash Memory Revision History Revision No 0.0 History Draft Date Remark 1. Initial issue Nov. 15. 2004 Advance The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right


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    K9K8G08U1M K9F4G08U0M K9F4G08U0M-Y K9F4G08U0M K9F4G08U 52-ULGA 52ULGA K9K8G08U1M K9F4G08U0M-ICB0 K9F4G08 81h-10h K9F4G08U0M-YCB PDF

    KM29W16000AIT

    Abstract: KM29W16000AT
    Contextual Info: KM29W16000AT, KM29W16000AIT FLASH MEMORY Document Title 2M x 8 Bit NAND Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial issue. April 10th 1998 Preliminary 1.1 Data Sheet 1998. July 14th 1998 Final The attached datasheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right


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    KM29W16000AT, KM29W16000AIT KM29W16000AIT KM29W16000AT PDF

    KM29W16000ATS

    Contextual Info: KM29W16000ATS FLASH MEMORY Document Title 2M x 8 Bit NAND Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial issue. April 10th 1998 Preliminary 1.1 Data Sheet 1998. July 14th 1998 Final The attached datasheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right


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    KM29W16000ATS KM29W16000ATS PDF

    K9F1G08

    Abstract: K9F1G08U0A K9F1G08X0A K9F1G08Q0A ADD12 K9F1G08D0A-Y
    Contextual Info: K9F1G08Q0A K9F1G08D0A K9F1G08U0A Advance FLASH MEMORY Document Title 128M x 8 Bit / 64M x 16 Bit NAND Flash Memory Revision History Revision No 0.0 History Draft Date Remark 1. Initial issue Aug. 24th. 2003 Advance The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right


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    K9F1G08Q0A K9F1G08D0A K9F1G08U0A K9F1G08Q0A-Y K9F1G08 K9F1G08U0A K9F1G08X0A K9F1G08Q0A ADD12 K9F1G08D0A-Y PDF

    400F

    Abstract: KM29N32000 KM29W32000TS
    Contextual Info: KM29W32000TS FLASH MEMORY Document Title 4M x 8 Bit NAND Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial issue. April 10th 1998 Preliminary 1.0 Data Sheet, 1998 July 14th 1998 Final The attached datasheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right


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    KM29W32000TS KM29V32000 KM29N32000 KM29W32000 400F KM29N32000 KM29W32000TS PDF

    Contextual Info: FLASH MEMORY KM29W32000T, KM29W32000IT 4M X 8 Bit NAND Flash Mem ory History D raft Date R e m a rk 0.0 Initial issue. April 10th 1998 Preliminary 1.0 Data Sheet, 1998 July 14th 1998 Final Revision No. The attached datasheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right


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    KM29W32000T, KM29W32000IT KM29V32000 KM29N32000 KM29W32000 PDF

    Contextual Info: KM29W16000AT, KM29W16000AIT FLASH MEMORY Document Title 2M x 8 Bit NAND Flash Memory Revision History Revision No. H istory Draft Date Rem ark 0.0 Initial issue. April 10th 1998 Preliminary 1.1 Data Sheet 1998. July 14th 1998 Final The attached datasheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right


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    KM29W16000AT, KM29W16000AIT PDF

    KM29U64000IT

    Abstract: KM29U64000T 400F
    Contextual Info: KM29U64000T, KM29U64000IT FLASH MEMORY Document Title 8M x 8 Bit NAND Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial issue. April 10th 1998 Preliminary 1.0 Data Sheet, 1998 July 14th 1998 Final The attached datasheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to cha nge the


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    KM29U64000T, KM29U64000IT KM29U64000IT KM29U64000T 400F PDF

    KM29N040

    Abstract: KM29V040IT KM29V040T km29v040
    Contextual Info: KM29V040T, KM29V040IT FLASH MEMORY Document Title 512K x 8 Bit NAND Flash Memory Revision History Revision No. History Draft Date 0.0 Data Sheet 1997. April 10th 1997 1.0 Data Sheet 1998. April 10th 1998 1.1 Data Sheet 1998. July 14th 1998 Remark Final The attached datasheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right


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    KM29V040T, KM29V040IT KM29N040 KM29V040IT KM29V040T km29v040 PDF

    PCMCIA FLASH CARD 10MB

    Abstract: S3C49F9X flashdisk controller Interfacing Flash Disk samsung 1Gb nand flash S3C49 compact flash controller
    Contextual Info: S3C49F9X SOLID DISK CONTROLLER INRODUCTION S3C49F9X User’s Manual Compact Flash Controller Samsung Electronics Co.,LTD Semiconductor LSI System Division 1 S3C49F9X SOLID DISK CONTROLLER 1 INRODUCTION PRODUCT OVERVIEW Samsung's S3C49F9X is NAND flash memory controller which can control flash memories as solid state


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    S3C49F9X 512Mbit 35-um 100TQFP 100-pin PCMCIA FLASH CARD 10MB flashdisk controller Interfacing Flash Disk samsung 1Gb nand flash S3C49 compact flash controller PDF

    S3C49F9X

    Abstract: 432t
    Contextual Info: S3C49F9X SOLID DISK CONTROLLER INRODUCTION S3C49F9X User’s Manual Compact Flash Controller Samsung Electronics Co.,LTD Semiconductor LSI System Division 1 S3C49F9X SOLID DISK CONTROLLER 1 INRODUCTION PRODUCT OVERVIEW Samsung's S3C49F9X is NAND flash memory controller which can control flash memories as solid state


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    S3C49F9X S3C49F9X 512Mbit 35-um 100-TQFP 100-pin 432t PDF

    "nand flash memory"

    Abstract: KM29N040 KM29N040IT KM29N040T
    Contextual Info: FLASH MEMORY KM29N040T, KM29N040IT Document Title 512K x 8 Bit NAND Flash Memory Revision History Revision No. History Draft Date 0.0 Data Sheet 1997. April 10th 1997 1.0 Data Sheet 1998. April 10th 1998 1.1 Data Sheet 1998. July 14th 1998 Remark Final The attached datasheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to cha nge the


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    KM29N040T, KM29N040IT "nand flash memory" KM29N040 KM29N040IT KM29N040T PDF

    2048-Bits

    Abstract: P128 P256 P512 P1024P1024 nand flash
    Contextual Info: NAND Flash ECC Algorithm Error Checking & Correction June 2004 Product Planning & Application Engineering Team MEMORY DIVISION SAMSUNG ELECTRONICS Co., LTD Product Product Planning Planning & & Application Application Eng. Eng. Team Team The The Leader Leader in


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    256bytes 22bit 2048bits 16bit 2048-Bits P128 P256 P512 P1024P1024 nand flash PDF