SAMSUNG 167 FBGA Search Results

K8D3216UBC-pi07

Abstract: K5E5658HCM KAD070J00M KBH10PD00M K5D1257ACM-D090000 samsung ddr2 ram MTBF KBB05A500A K801716UBC k5d1g13acm k5a3281ctm
Contextual Info: Product Selection Guide Memory and Storage April 2005 MEMORY AND STORAGE SECTION A DRAM DDR2 SDRAM DDR SDRAM SDRAM RDRAM NETWORK DRAM MOBILE SDRAM GRAPHICS DDR SDRAM DRAM ORDERING INFORMATION FLASH NAND, OneNAND, NOR FLASH NAND FLASH ORDERING INFORMATION SRAM

K7M161825A

Abstract: K7M163625A
Contextual Info: K7M163625A K7M161825A 512Kx36 & 1Mx18 Flow-Through NtRAMTM Document Title 512Kx36 & 1Mx18-Bit Flow Through NtRAMTM Revision History Rev. No. 0.0 0.1 0.2 0.3 History Draft Date Remark 1. 1. 1. 2. 1. 2. Feb. 23. 2001 May. 10. 2001 Aug. 03. 2001 Preliminary Preliminary

Contextual Info: K7N163649A K7N163249A K7N161849A Preliminary 512Kx36/32 & 1Mx18 Pipelined NtRAMTM Document Title 512Kx36/32 & 1Mx18-Bit Pipelined NtRAMTM Revision History Rev. No. 0.0 0.1 0.2 History Draft Date Remark 1. 1. 1. 2. April. 06. 2001 May. 10. 2001 Aug. 30. 2001

DDR266

Abstract: DDR333 DDR400 W3EG2128M72AFSR-D3
Contextual Info: White Electronic Designs W3EG2128M72AFSR-D3 -AD3 2GB – 2x128Mx72 DDR SDRAM REGISTERED ECC, w/PLL, FBGA FEATURES DESCRIPTION Double-data-rate architecture The W3EG2128M72AFSR is a 2x128Mx72 Double Data Rate SDRAM memory module based on 512Mb DDR SDRAM components. The module consists of thirty six

NC-2H

Abstract: K7M161825A K7M163625A
Contextual Info: K7M163625A K7M163225A K7M161825A Preliminary 512Kx36/32 & 1Mx18 Flow-Through NtRAMTM Document Title 512Kx36/32 & 1Mx18-Bit Flow Through NtRAM TM Revision History Rev. No. 0.0 0.1 0.2 0.3 History Draft Date Remark 1. Initial document. 1. Add JTAG Scan Order

Contextual Info: K7A163609A K7A163209A K7A161809A PRELIMINARY 512Kx36/x32 & 1Mx18 Synchronous SRAM Document Title 512Kx36/x32 & 1Mx18-Bit Synchronous Pipelined Burst SRAM Revision History Rev. No. 0.0 0.1 0.2 History Draft Date 1. 1. 1. 2. Feb. 23. 2001 May. 10. 2001 Aug. 30. 2001

K7N161801A

Abstract: K7N163601A
Contextual Info: K7N163601A K7N161801A 512Kx36 & 1Mx18 Pipelined NtRAM TM Document Title 512Kx36 & 1Mx18-Bit Pipelined NtRAMTM Revision History Rev. No. History Draft Date Initial document. Add JTAG Scan Order Add x32 org and industrial temperature . Add 165FBGA package Speed bin merge.

Contextual Info: White Electronic Designs WV3HG64M72EEU-PD4 ADVANCED* 512MB – 64Mx72 DDR2 SDRAM, UNBUFFERED SO-DIMM, w/PLL FEATURES DESCRIPTION Unbuffered 200-pin SO-DIMM , Small-Outline dual in-line memory module The WV3HG64M72EEU is a 64Mx72 Double Data Rate DDR2 SDRAM high density module. This memory

Contextual Info: White Electronic Designs W3HG2128M64EEU-D4 2GB – 2x128Mx64 DDR2 SDRAM UNBUFFERED FEATURES DESCRIPTION „ Unbuffered 200-pin, dual in-line memory module SO-DIMM „ Fast data transfer rates: PC2-5300, PC2-4200 and PC2-3200 „ Based or Raw Card E design architecture

K7A163600A-QC

Abstract: K7B161825A K7B163625A
Contextual Info: K7B163625A K7B161825A 512Kx36 & 1Mx18 Synchronous SRAM Document Title 512Kx36 & 1Mx18-Bit Synchronous Burst SRAM Revision History Rev. No. 0.0 History 1. Initial draft Draft Date Feb. 23. 2001 Remark Preliminary 0.1 1. Add JTAG Scan Order May. 10. 2001 Preliminary

M378T2953CZ3

Abstract: 1GB DDR2 4 banks DDR2 SDRAM ECC dm 533 M378T6553CZ0 K4T5108
Contextual Info: 256MB, 512MB, 1GB Unbuffered DIMMs DDR2 SDRAM DDR2 Unbuffered SDRAM MODULE 240pin Unbuffered Module based on 512Mb C-die 64/72-bit Non-ECC/ECC INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE.

Contextual Info: White Electronic Designs W3HG128M72EEU-PD4 CONCEPT* 1GB – 128Mx72 DDR2 SDRAM UNBUFFERED, SO-CDIMM w/PLL FEATURES DESCRIPTION „ Unbuffered 200-pin SO-CDIMM small-outline dual in-line memory module. Raw card "B". „ Support ECC detection and correction

SOP 8 200MIL

Abstract: serial flash 256Mb fast erase spi TM 1628 IC SOP Micron 512MB NOR FLASH HN29V1G91T-30 HN58C1001FPI-15 M5M51008DFP-70HI 256mb EEPROM Memory CSP-48 TSOP 28 SPI memory Package flash
Contextual Info: Renesas Memory General Catalog 2003.11 Renesas Memory General Catalog Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Keep safety first in your circuit designs! 1. Renesas Technology Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with

Contextual Info: White Electronic Designs WV3HG32M72EER-AD6 ADVANCED* 256MB – 32Mx72 DDR2 SDRAM REGISTERED, w/PLL FEATURES DESCRIPTION 240-pin, dual in-line memory module The WV3HG32M72EER is a 32Mx72 Double Data Rate DDR2 SDRAM high density module. This memory module consists of nine 32Mx8 bit with 4 banks DDR2

M471B5773DH0

Abstract: M471B5273DH0 m471b5273 DDR3 sodimm 4gb samsung 78FBGA DDR3-1066 DDR3-1333 M471B5773
Contextual Info: Rev. 1.1, Aug. 2011 M471B5773DH0 M471B5273DH0 204pin Unbuffered SODIMM based on 2Gb D-die 1.35V 78FBGA with Lead-Free & Halogen-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE.

K4T1G164QF-BCF8

Abstract: K4T1G084QF-BCF8 k4t1g164qf K4T1G084QF DDR2-1066 K4T1G164QF-BC K4T1G084QF-BC
Contextual Info: Rev. 1.12, Sep. 2010 K4T1G084QF K4T1G164QF 1Gb F-die DDR2-1066 SDRAM 60FBGA/84FBGA with Lead-Free & Halogen-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed

CY7C1317V18

Abstract: CY7C1319V18 CY7C1321V18
Contextual Info: CY7C1317V18 CY7C1319V18 CY7C1321V18 ADVANCE INFORMATION 18-Mb 4-Word Burst SRAM with DDR-II Architecture Features Functional Description • 18-Mb Density 2M x 8, 1M x 18, 512K x 36 — Supports concurrent transactions • 300-MHz Clock for High Bandwidth

HM66AQB18204

Abstract: HM66AQB36104 HM66AQB36104BP-30 HM66AQB36104BP-33 HM66AQB36104BP-40 HM66AQB9404 of 8404
Contextual Info: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog

Contextual Info: CY7C1312CV18 CY7C1314CV18 18-Mbit QDR II SRAM 2-Word Burst Architecture 18-Mbit QDR® II SRAM 2-Word Burst Architecture Features Configurations • Separate independent Read and Write Data Ports ❐ Supports concurrent transactions CY7C1312CV18 – 1M x 18

K4B4G0846A-HCH9

Abstract: K4B4G0846A-HCK0 K4B4G0846A K4B4G0446A 78FBGA DDR3-1066 DDR3-1333 K4B4G0846A-HCF8 K4B4G0446A-HCH9 ddr3 sdram chip 128mb
Contextual Info: Rev. 1.01, Nov. 2010 K4B4G0446A K4B4G0846A 4Gb A-die DDR3 SDRAM 78FBGA with Lead-Free & Halogen-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed

M393B2K70DM0

Abstract: k4b4g0446d M393B5270DH0 M393B5773DH0 78FBGA M393B1K70DH0 M393B1K73DH0 M393B5273DH0
Contextual Info: Rev. 1.2, Aug. 2011 M393B5773DH0 M393B5273DH0 M393B5270DH0 M393B1K70DH0 M393B1K73DH0 M393B2K70DM0 240pin Registered DIMM based on 2Gb D-die 1.35V 78FBGA with Lead-Free & Halogen-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND

bzx 850

Abstract: bzx 850 30
Contextual Info: CY7C1412AV18 CY7C1414AV18 36 Mbit QDR II SRAM Two Word Burst Architecture Features Functional Description • Separate independent read and write data ports ❐ Supports concurrent transactions ■ 250 MHz clock for high bandwidth ■ 2-word burst on all accesses

Contextual Info: CY7C1313CV18 CY7C1315CV18 18-Mbit QDR II SRAM 4-Word Burst Architecture 18-Mbit QDR® II SRAM 4-Word Burst Architecture Features Configurations Separate independent read and write data ports ❐ Supports concurrent transactions CY7C1313CV18 – 1M x 18 •

Contextual Info: MuxOneNAND2G KFM2G16Q2M-DEBx MuxOneNAND4G(KFN4G16Q2M-DEBx) FLASH MEMORY KFM2G16Q2M KFN4G16Q2M 2Gb MuxOneNAND M-die INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,