SAI SOT23 Search Results

Contextual Info: www.fairchildsemi.com LM 4 3 1 SAI Progra m m a ble Shunt Re gulat or Features Description • • • • The LM431SAI is three terminal output adjustable regulator with thermal stability over operating temperature range from -40°C to +85°C. The output voltage can be set any value

at30b

Abstract: AT-80B11 AT-30611 sj 2252 ic AT-30S33 transistor SJ 2518 AT-80533
Contextual Info: warn HEWLETT ASEI PACKARD Low Current, High Performance NPN Silicon Bipolar Transistor Technical Data AT-30511 AT-30633 F eatu res D escription * High Performance Bipolar Transistor Optimized for Low Current, Low Voltage Operation * Amplifier Tested 900 MHz

lm39401t

Abstract: blm21p300 MOSFET R166 5361AS PANASONIC sram card 34 pin philips cdi schematics max232cwe 5361bs PQFP240 rpack8
Contextual Info: CRD42528 Reference Design for the CS49300 and CS42528 Features Description Supports 4 digital S/PDIF IEC60958/IEC61937 inputs 8 Discrete analog inputs using the CS42528 + 3 external CS5351 ADCs for 8 analog channels of input at 48 kHz and 96 kHz 2 Channel upsampling supported

SAI SOT23

Contextual Info: SIEMENS PNP Silicon AF Transistors SMBTA 55 SMBTA 56 • High breakdown voltage • Low collector-emitter saturation voltage • Complementary types: SMBTA 05, SMBTA 06 NPN Type Marking Ordering Code (tape and reel) PinC Contigui•ation 1 2 3 Package1)

BFR92P

Contextual Info: 3 S E D • ö5 3b3 EG 0G17GQ2 T W ËSI P NPN Silicon RF Transistor SIEMENS/ SPCLi SEMICONDS BFR92P _ 7_ • For broadband amplifiers up to 2 GHz and fast non-saturated switches at collector currents from 0.5 to 20 mA. C £ CECC-type available: CECC 50002/254.

AT41511-BLK

Abstract: AT-41533-BLK
Contextual Info: f » HEW LETT f t "KM PACKARD General Purpose, Low Noise NPN Silicon Bipolar Transistor Technical Data AT-41511, AT-41533 Features D escription • General Purpose NPN Bipolar Transistor • 900 MHz Performance: AT-41511:1 dB NF, 15.5 dB G. AT-41533:1 dB NF,

Contextual Info: 32E D • Ô S 3 b 3 2 Q Q ü l 7 QSb 0 H S I P . N P N Silicon RF Transistor BFS 17P S I E M E N S / SPCL-, S E M I C O N D S r ~ 31 _ • For broadband amplifiers up to 1 GHz at collector currents from 1 to 20 mA. 6 CECC-type available: CECC 50002/262.

AT-30533

Contextual Info: ÏÏS S i HEWLETT mLEM P A C K A R D Low Current, High Performance NPN Silicon Bipolar Transistor Technical Data AT-30511 AT-30533 Features Description • High Performance Bipolar Transistor Optimized for Low Current, Low Voltage Operation • 900 MHz Performance:

NE02136

Abstract: 2SC2570 NE02135 equivalent 2sc2570 transistor NE02103 k427 2SC1560 2sc2351 equivalent LM5741 GHZ micro-X Package
Contextual Info: N E C / 1SE D CALIFORNIA r - 3 / '/ 5 b427414 000137S 1 NPN SILICON HIGH FREQUENCY TRANSISTOR T '3 i- I 7 NE021 SERIES FEATURES DESCRIPTION AND APPLICATIONS • HIGH INSERTION GAIN: 18.5 dB at 500 MHz The NE021 series of NPN silicon transistors provides eco­

SSL100

Abstract: SSL100 SN MP15N MP34N SE090 6RS21 a12 diod MP45N MD11N ACBL
Contextual Info: "'ì5r'cílAÑGg"' MINICARTRIDGE RELAYOUT 1.PCMCIA SW5 0 3 J U M P E R SETTING GUIDELINE ON PAGE 6 PINI on OFF ON OFF SW502 m o fnt tM ïh \ 6 .C P U M / B D I D O — 3 F U N C T I O N T O BE DEF I N E D , D E F A U L T ON T O S E L E C T M / B D IDO S B

1j0 919 506 k

Abstract: 1251H AT82 I.C LA 3778
Contextual Info: l ï l HEWLETT I S S fl P A C K A R D Low Current, High Performance NPN Silicon Bipolar Transistor Technical Data AT-32011, AT-32033 Features Description • High Performance Bipolar Translator Optimized for Low Current, Low Voltage Operation • Am plifier T ested 900 MHz

JESD78

Abstract: SCT 280 NCP302 NCP302LSN09T1 NCP303 MARKING code SSi SOT23 NCP303LSN09T1G marking code SAL sot-23-5
Contextual Info: NCP302, NCP303 Voltage Detector Series with Programmable Delay The NCP302 and NCP303 series are second generation ultra−low current voltage detectors that contain a programmable time delay generator. These devices are specifically designed for use as reset

TRANSISTOR NPN BA RV SOT - 89

Contextual Info: W hat PACKARD HEW LE TT* 1"KM Low Current, High Performance NPN Silicon Bipolar Transistor Technical Data AT-31011 AT-31033 Features * High Perform ance Bipolar Transistor O ptim ized for Low Current, Low Voltage Operation * A m plifier T ested 900 MHz Performance:

Contextual Info: Wtipl H E W L E T T mLftMP A C K A R D Low Current, High Performance NPN Silicon Bipolar Transistor Technical Data AT-31011 AT-31033 Features Description • High Performance Bipolar Transistor Optimized for Low Current, Low Voltage Operation • Am plifier Tested 900 MHz

LM50 sot23-5

Abstract: LMS48 FPD87370 USBN9604 lmx2324 SSOP-EIAJ28 7I SOT23-3 STT150 DS92LV1021A fpd8737
Contextual Info: 2005^ 4 ^ 1 m m jim m m t t * * * « it m * * m m m m m z m m m m z * . u tm u m h * * * » » |t f c g « M 2 -7 n ^ fts a » a « * ' Ä lttlÄ Ä B te ir a f e >m ' « « f t * X |I » J : TO m » • REID M U M ttA ' K ä U M U M ß U l Mtklrm •

2N7002DM

Abstract: kia 1117 3.3 VT8233 g3mx SMD M05 sot23 H052 W044 kia 1117 1.8 C85C39 c8252
Contextual Info: - p. <11 « P.02 Cover Page P. 29 DC-DC +1.25V P4 478 P.30 DC-DC +2.5V P. 31 Battery P. 32 Charger 1 of 2 P.03 P4 4 78 - PWR & GND (2 of 2) P.04 NB VT8703 - Host, CRT and TV Interface P.05 NB VT8703 - Memory Interface P.06 NB VT8703 - LVDS, (1 of 3) (2 of 3)

SB0061

Abstract: AP239 sick wl 33-01 F11YT1 DIODE E BUG C552 intel dg41 diode BUG C332 04D2R 1R32Z intel dg41 vw
Contextual Info: Twinhead Model : F11YT1 R:0 Intel Yonah ULV+Calistoga 945GM+ICH7-M Revision History A ORIGINAL RELEASE B 2006/01/12 Rev :B release. C 2006/03/17 Rev:C release. 2006/03/31 Rev :0 release. PCB STACK UP LAY1 LAY2 LAY3 LAY4 LAY5 LAY6 LAY7 LAY8 TOP GND IN1 VCC

4606 MOSFET INVERTER

Abstract: SBT sot-23-5 4606 inverter NCP302 NCP302LSN09T1 NCP302LSN10T1 NCP303
Contextual Info: NCP302, NCP303 Voltage Detector Series with Programmable Delay The NCP302 and NCP303 series are second generation ultra-low current voltage detectors that contain a programmable time delay generator. These devices are specifically designed for use as reset

MARKING Scw SOT23

Abstract: marking code SOT23 SSi NCV303LSN16T1 "SCG" sot23-5 ncp303lsn30t1g NCP303LSN27 SOT23-5 marking scK NCP303LSN29T1G NCP303LSN09T1G NCP302HSN27T1
Contextual Info: NCP302, NCP303 Voltage Detector Series with Programmable Delay The NCP302 and NCP303 series are second generation ultra−low current voltage detectors that contain a programmable time delay generator. These devices are specifically designed for use as reset

asus schematic diagram

Abstract: asus f3 asus 74MC14 Asus P5 FJ 3528 asus block diagram asus diagram asus a6 EL B17 A017
Contextual Info: SLK BLOCK DIAGRAM V 2.00 < INTEL COPPERMINE GCL I N V ,LCD SBT OZ998 1,2,3 37 38 HOST BUS MEM BUS INTEL ON BOARD 64MB SDRAM CLOCKS 9248-10 1 c* CO I/O BOARD IC S SODIMM ONE SLOT 11 PCI BUS 10 USB P O R T *2 RJ-11 CARDBUS CONTREOLLER « I 1451 W 1 8 ,1 9 R J -4 5

W22C

Abstract: S12301DS 5133S stp520 t12m256 T12M256A-12J UPC507 MITAC PC515 GP014
Contextual Info: MODEL : 5133S Revision 02A Table of Contents page 1 Cover Sheet Block Diagram 2 Central Processor Unit 3 North Bridge Part A & PBSRAM/TAG RAM 4 North Bridge Part B 5 System Memory 6 South Bridge 7 PCMCIA Controller & Socket 8 Audio Codec & Amplifier 9 Enhance IDE & FDD Connector

KD-59

Abstract: KTG1 bu 5027 KD41 trident vga D29170 kd2s hsmc connector
Contextual Info: î g p f* T i g 6H - o F f c t t J u J A P - ECÓ a ppr q t JX T R E S E R V E EXTRA FDD CONN. M O D I F Y POWER PLANE F O R POS REMOVE ON-BOARD DIKH SOCKET CH AN GÉ POWER OF RESÜME WEL L C O R R E C T DRAWING E X P A N D V R A M T O 4M O N - B O A R D

PTC SY 16P

Abstract: jl audio 500 1 schematics OTP-538 C96F MDC 3023 A03401 yt 1208 diode UAA 1004 DP 3CK10 08TI
Contextual Info: 8170 System Block Diagram . . f0 r . » n-nn irn-ri Pentium 4 . W ill a m e ttel North w ood C.P.U. ADM 1021 Micro-FCPGA 478 pin Thermal Recorder TPS2211 1C CARD Socket CN T- o o c < Q o CO Power Switch

RPY 86

Abstract: valvo halbleiter RPY94 CQY 24 BV EI 30-20 3001 LDR 03 diode byx 64 600 valvo transistoren KP101A BAV99-1
Contextual Info: Elektronik. Wir bauen die Elemente. v a i v D Halbleiterbauelemente Produktprogramm DH, April 1984 Elektronik. Wir bauen die Elemente Unser Arbeitsgebiet - besonders die Mikroelektronik - entwickelt sich immer rascher zum Motor für eine Vielzahl von Innovationen. Mit gründ­