SAI SOT23 Search Results

Contextual Info: www.fairchildsemi.com LM 4 3 1 SAI Progra m m a ble Shunt Re gulat or Features Description • • • • The LM431SAI is three terminal output adjustable regulator with thermal stability over operating temperature range from -40°C to +85°C. The output voltage can be set any value

toslink To RCA analog

Abstract: 5361bs cdb 442 transistor C143 4053c 5361as NJM2068E 4816P-001-472 EMP7160STC100-6 C144 DIGITAL NPN TRANSISTOR
Contextual Info: CDB42518 Evaluation Board For CS42518/16 Features Description Single-Ended Analog Inputs and Outputs Integrated S/PDIF compatible Receiver CS5361 converters supply ADCIN1 and ADCIN2 for CS42518 One Line Modes CS8406 S/PDIF Digital Audio Transmitter Header for optional external configuration of

5361bs

Abstract: 5361as cdb 442 4816P-001-472 transistor c143 circuits rca to optical converter 5361asdat c136 transistor to92 transistor c114 diagrams transistor c243
Contextual Info: CDB42528 Evaluation Board For CS42528/26 Features Description Single-Ended Analog Inputs and Outputs Integrated S/PDIF compatible Receiver CS5361 converters supply ADCIN1 and ADCIN2 for CS42528 One Line Modes CS8406 S/PDIF Digital Audio Transmitter Header for optional external configuration of

sk 8050s

Abstract: 8050s "pin compatible" 8050S REGULATOR SK 3051N Switching Regulators T0220 PACKAGE SI-8000 SK A 3051N secondary Voltage Regulators
Contextual Info: SI-3001N 1 A Low-Dropout Regulators SI-3001N Functional Block Diagram The SI-3001N series of low-dropout regulators from Sanken are ideally suited to power supply applications in televisions, video recorders, and office automation equipment. 54 SK 3051N Tr1

at30b

Abstract: AT-80B11 AT-30611 sj 2252 ic AT-30S33 transistor SJ 2518 AT-80533
Contextual Info: warn HEWLETT ASEI PACKARD Low Current, High Performance NPN Silicon Bipolar Transistor Technical Data AT-30511 AT-30633 F eatu res D escription * High Performance Bipolar Transistor Optimized for Low Current, Low Voltage Operation * Amplifier Tested 900 MHz

SAI SOT23

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The R F Line NPN S ilico n H ig h-Frequency Tran sistor BFS17LT1 Designed primarily for use in high-gain, low-noise amplifier, oscillator and mixer applications. Packaged for thick or thin film circuits using surface mount

SAI SOT23

Contextual Info: SEMICONDUCTOR BCX19 T E C H N I C A L DATA E PIT A XIA L PLA N A R NPN T R A N SIST O R G E N E R A L PU R PO SE A PPLICATION. SW ITC H IN G APPLICATIO N. B FEA T U RE DIM • Super Mini Packaged Transistors for Hybrid Circuits. 1 Collector-Base Voltage _

Contextual Info: SIEMENS PNP Silicon Transistor SMBTA 70 • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage Type Marking Ordering Code tape and reel Pin Configuration 1 2 3 Package1) SMBTA 70 s2C Q62702-M0003

lm39401t

Abstract: blm21p300 MOSFET R166 5361AS PANASONIC sram card 34 pin philips cdi schematics max232cwe 5361bs PQFP240 rpack8
Contextual Info: CRD42528 Reference Design for the CS49300 and CS42528 Features Description Supports 4 digital S/PDIF IEC60958/IEC61937 inputs 8 Discrete analog inputs using the CS42528 + 3 external CS5351 ADCs for 8 analog channels of input at 48 kHz and 96 kHz 2 Channel upsampling supported

SAI SOT23

Contextual Info: SIEMENS PNP Silicon AF Transistors SMBTA 55 SMBTA 56 • High breakdown voltage • Low collector-emitter saturation voltage • Complementary types: SMBTA 05, SMBTA 06 NPN Type Marking Ordering Code (tape and reel) PinC Contigui•ation 1 2 3 Package1)

AT-30533

Abstract: 4MM75 AT-30511 AT-310 M4475 4b0 932 AT30511
Contextual Info: f That HEW LETT« mLfiM P A C K A R D Low C urrent, High Perform ance NPN S ilicon B ipolar T ransistor Technical Data A T -30511 A T -30533 F eatu res D escription • H igh P e rfo rm a n c e B ip o la r T r a n s is to r O p tim iz ed fo r Low C u rre n t, Low V oltage

Contextual Info: SIEMENS PNP Silicon Switching Transistor SMBT 3906 • High DC current gain: 0.1 mA to 100 mA • Low collector-emitter saturation voltage • Complementary type: SMBT 3904 NPN Type Marking Ordering Code (tape and reel) PinCtonfigu ration 1 2 3 Package1)

AT-310

Abstract: AT-31011 AT-31033 SAI SOT23
Contextual Info: Thal mLßm HP AE CWKLAERTDT Low Current, High Performance NPN Silicon Bipolar Transistor Technical Data - I AT-31011 AT-31033 Features Description • High Perform ance Bipolar

BFR92P

Contextual Info: 3 S E D • ö5 3b3 EG 0G17GQ2 T W ËSI P NPN Silicon RF Transistor SIEMENS/ SPCLi SEMICONDS BFR92P _ 7_ • For broadband amplifiers up to 2 GHz and fast non-saturated switches at collector currents from 0.5 to 20 mA. C £ CECC-type available: CECC 50002/254.

sot-23 MARKING CODE ZA

Abstract: sot-23 CODE 41 bfs17p mc
Contextual Info: NPN Silicon RF Transistor BFS17P • For broadband amplifiers up to 1 G H z at collector currents from 1 to 20 mA. E C E C C -typ e available: C E C C 50002/262. ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering code

sot-23 MARKING CODE ZA

Abstract: BFQ29P
Contextual Info: NPN Silicon RF Transistor BFQ29P • For low-noise IF and broadband amplifiers up to 1 GHz at collector currents from 1 to 20 mA. E CECC-type available: CECC 50002/258. ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking

AT41511-BLK

Abstract: AT-41533-BLK
Contextual Info: f » HEW LETT f t "KM PACKARD General Purpose, Low Noise NPN Silicon Bipolar Transistor Technical Data AT-41511, AT-41533 Features D escription • General Purpose NPN Bipolar Transistor • 900 MHz Performance: AT-41511:1 dB NF, 15.5 dB G. AT-41533:1 dB NF,

smd DIODE B34

Abstract: SA7 smD TRANSISTOR B38 SMD Transistor HC-2532-10 smd transistor b35 sot-23 SMD SOT23 A53 smd a60 smd transistor SA4 siemens ad1 c11 EPCOS capacitor
Contextual Info: ICs for Communications PITA-2 Evaluation Board PITA-2 - PCI Interface for Telephony/Data Applications SIPB 46100P Version 2.1 Hardware User´s Manual 02.00 • SIPB 46100P PITA-2 Evaluation Board Hardware User´s Manual Revision History: Current Version: 02.00

Contextual Info: 32E D • Ô S 3 b 3 2 Q Q ü l 7 QSb 0 H S I P . N P N Silicon RF Transistor BFS 17P S I E M E N S / SPCL-, S E M I C O N D S r ~ 31 _ • For broadband amplifiers up to 1 GHz at collector currents from 1 to 20 mA. 6 CECC-type available: CECC 50002/262.

BC5578

Abstract: npn smd bc550 smd transistor smd 1FT BC5488 smd marking code BC817 BC546 SMD bc816 SMD MARKING CODE C2U SMD MARKING CODE c1l c1g smd
Contextual Info: SMD Transistors SOT-23 Case U.S. Specification Preferred Series 350mW NEW! NEW! NEW! NEW! NEW! NEW! NEW! NEW! NEW! NEW! NEW! TYPE NO. DESCRIPTION BVC*0 (VOUS) MM BVcto (VOLTS) MM *¥»0 (VOUS) MM 1*0 <8 Ve, (•*) (VOUS) MAX CMPT 918 CMPT2222A CMPT2369 CMPT2484

AT-30533

Contextual Info: ÏÏS S i HEWLETT mLEM P A C K A R D Low Current, High Performance NPN Silicon Bipolar Transistor Technical Data AT-30511 AT-30533 Features Description • High Performance Bipolar Transistor Optimized for Low Current, Low Voltage Operation • 900 MHz Performance:

NE02136

Abstract: 2SC2570 NE02135 equivalent 2sc2570 transistor NE02103 k427 2SC1560 2sc2351 equivalent LM5741 GHZ micro-X Package
Contextual Info: N E C / 1SE D CALIFORNIA r - 3 / '/ 5 b427414 000137S 1 NPN SILICON HIGH FREQUENCY TRANSISTOR T '3 i- I 7 NE021 SERIES FEATURES DESCRIPTION AND APPLICATIONS • HIGH INSERTION GAIN: 18.5 dB at 500 MHz The NE021 series of NPN silicon transistors provides eco­

st ae gp 446

Abstract: AE GP 532 AE GP 531 ae gp 447 592/diode gp 421
Contextual Info: NPN Silicon RF Transistor BFQ 81 • For low -noise am plifiers up to 2 GHz and broadband analog and digital applications in telecom m unications system s at co lle cto r currents from 0.5 to 20 mA. £ C EC C -type available: CECC 50002/257. ESD: E lectrostatic discharge sensitive device, observe handling precautions!

NE99532

Abstract: 2sc3358 NE3005B20 NE85637 NE4201 NE1010E 2SC3358 transistor ne3005b-20 NE1005E NEC 8563
Contextual Info: NEC/ CALIFORNIA 1SE D bMs?m4 D D o m a i a T IM S - T - it- t r NEC NPN SILICON HIGH FREQUENCY TRANSISTOR NE856 SERIES T'3h21 FEATURES DESCRIPTION AND APPLICATIONS • H IG H G A IN B A N D W ID T H P R O D U C T : f r = 7 G H z The NE856 series of NPN epitaxial silicon transistors Is de­