S817 Search Results

sud40n10-25-e3

Contextual Info: SUD40N10-25 Vishay Siliconix N-Channel 100-V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) 100 RDS(on) (Ω) ID (A) 0.025 at VGS = 10 V 40 0.028 at VGS = 4.5 V 38 • TrenchFET Power MOSFET • 175 °C Maximum Junction Temperature • 100 % Rg Tested

Si7748DP-T1-GE3

Abstract: Si7748DP si7748
Contextual Info: New Product Si7748DP Vishay Siliconix N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0048 at VGS = 10 V 50 0.0066 at VGS = 4.5 V 50 VDS (V) 30 Qg (Typ.) 27.8 nC • Halogen-free • SkyFET Monolithic TrenchFET

SUD40N10-25

Abstract: SUD40N10-25-E3
Contextual Info: SUD40N10-25 Vishay Siliconix N-Channel 100-V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) 100 RDS(on) (Ω) ID (A) 0.025 at VGS = 10 V 40 0.028 at VGS = 4.5 V 38 • TrenchFET Power MOSFET • 175 °C Maximum Junction Temperature • 100 % Rg Tested

Contextual Info: New Product Si7748DP Vishay Siliconix N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0048 at VGS = 10 V 50 0.0066 at VGS = 4.5 V 50 VDS (V) 30 Qg (Typ.) 27.8 nC • Halogen-free • SkyFET Monolithic TrenchFET

8254aa

Abstract: capacitor NED je8 S-8353A33MC-IQS-T2 S-8254 battery c2u G83 PNP Transistor b9d s2914 S-8355M50MC-MDJ-T2 AVR 8335 M6M80041
Contextual Info: Network Components Business Unit CMOS IC Product Catalogue 2002-2003 October 2002 SII offers data sheets on the Internet. On SII-IC.COM, SII offers data sheets which summarize the specifications of each IC. For the latest information, access the following WEB site.

Si9933CDY-T1-E3

Abstract: Si9933CDY Si9933CDY-T1-GE3
Contextual Info: New Product Si9933CDY Vishay Siliconix Dual P-Channel 20-V D-S MOSFET FEATURES • Halogen-free Option Available • TrenchFET Power MOSFET • 100 % Rg and UIS Tested PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, e 0.058 at VGS = - 4.5 V -4 0.094 at VGS = - 2.5 V

68764

Abstract: SiR476DP-T1-GE3 6416F
Contextual Info: New Product SiR476DP Vishay Siliconix N-Channel 25-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0017 at VGS = 10 V 60 0.0021 at VGS = 4.5 V 60 VDS (V) 25 Qg (Typ.) 42.5 nC S • VRM, POL, Server • High Current DC/DC - Low-Side • OR-ing

Contextual Info: Features • Number of keys: up to 16 keys, and one slider constructed from 2 to 8 keys • Number of I/O lines: 11 (3 dedicated - configurable for input or output, 8 shared output only), PWM control for LED driving • Technology: patented spread-spectrum charge-transfer (transverse mode)

Contextual Info: Features • QField Touchscreen: – Up to 3.4 inches diagonal screen size supported • Technology: – Patented spread-spectrum charge-transfer transverse mode • Panel Materials: • • • • • • • • • – Plastic, glass, composites, painted surfaces (low particle density metallic paints

ATMEL touch controller IC

Abstract: Atmel touchscreen AT42QT5320 atmel touch pattern Qmatrix qt5320 AP2121 Touch Screen Controller atmel atmel touch controller capacitive touchscreen controller
Contextual Info: Features • Configurations: • • • • • • • • • • • • • – Can be configured as a combination of touchscreen, sliders/wheels and keys, with Adjacent Key Suppression AKS™ technology between groups QField™ Touchscreen: – Two-touch capable with independent XY tracking for one or two concurrent

ATMEL touch controller IC

Abstract: QT4120 capacitive touchscreen controller at42qt4120 Atmel touchscreen 9506AS CHARGE-TRANSFER Qmatrix XC6215 International Paints
Contextual Info: Features • QField Touchscreen: – Up to 3.4 inches diagonal screen size supported • Technology: – Patented spread-spectrum charge-transfer transverse mode • Panel Materials: • • • • • • • • • – Plastic, glass, composites, painted surfaces (low particle density metallic paints

SiR440DP

Abstract: SiR440DP-T1-GE3
Contextual Info: New Product SiR440DP Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.00155 at VGS = 10 V 60 0.002 at VGS = 4.5 V 60 VDS (V) 20 Qg (Typ.) 43.5 nC S • Fixed Telecom • High Current dc-to-dc • OR-ing 5.15 mm 1

Si7720DN

Abstract: Si7720DN-T1-GE3 si7720
Contextual Info: Si7720DN Vishay Siliconix N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) ID (A)e RDS(on) (Ω) 30 0.0125 at VGS = 10 V 12 0.015 at VGS = 4.5 V 12 Qg (Typ.) 13.7 nC PowerPAK 1212-8 S 3.30 mm • Notebook PC - System Power • Buck Converter

LCD display jhd

Abstract: jhd 16a S-1380 JHD LCD S-81250SGY s-7116A TRANSISTOR PNP BA RT SOT 89 S-87050 M6M80041 notebook Universal LCD inverter AVT
Contextual Info: CMOS IC Product Catalog Components Headquarters Product Catalog CMOS IC Quartz Crystals Micro Batteries Fiber Optics MATERIALS Liquid Crystal Display Custom LCD Module Please visit our HomePage for more new information. <http://www.sii.co.jp/compo> Contents

Contextual Info: Rev.4.0_00 SUPER-SMALL PACKAGE CMOS VOLTAGE REGULATOR S-817 Series The S-817 Series is a 3-terminal positive voltage regulator, developed using CMOS technology. Small ceramic capacitors can be used as the output capacitor, and the S-817 series provides stable

Contextual Info: New Product Si7172DP Vishay Siliconix N-Channel 200-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)g RDS(on) (Ω) 200 0.070 at VGS = 10 V 25 0.076 at VGS = 6 V 24 Qg (Typ.) 34 PowerPAK SO-8 • • • • • Halogen-free TrenchFET Power MOSFET Low Thermal Resistance PowerPAK® Package

Contextual Info: New Product SiR440DP Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.00155 at VGS = 10 V 60 0.002 at VGS = 4.5 V 60 VDS (V) 20 Qg (Typ.) 43.5 nC S • Fixed Telecom • High Current dc-to-dc • OR-ing 5.15 mm 1

Contextual Info: SPICE Device Model Si3473CDV Vishay Siliconix P-Channel 12-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Si4448DY

Abstract: Si4448
Contextual Info: SPICE Device Model Si4448DY Vishay Siliconix N-Channel 12-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

SiR476DP-T1-GE3

Contextual Info: New Product SiR476DP Vishay Siliconix N-Channel 25-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0017 at VGS = 10 V 60 0.0021 at VGS = 4.5 V 60 VDS (V) 25 Qg (Typ.) 42.5 nC S • VRM, POL, Server • High Current DC/DC - Low-Side • OR-ing

A2732

Abstract: S8175
Contextual Info: SPICE Device Model Si3471CDV Vishay Siliconix P-Channel 12-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

foxconn

Abstract: 1000P-0402 LA-1452 RTL8101L C267 G2R-117 C612 Socket AM2 BDW00 PCI 1520
Contextual Info: A B C D E 1 1 Compal confidential 2 2 Schematics Document ClawHammer AMD K8 with nVIDIA Chrush K8 3 3 2003-10-15 REV:0.5 4 4 Compal Electronics, Inc. Title THIS SHEET OF ENGINEERING DRAWING IS THE PROPRIETARY PROPERTY OF COMPAL ELECTRONICS, INC. AND CONTAINS CONFIDENTIAL

ACES85205-0300

Abstract: MAP17-232 realtek design foxconn compal 90W ac adapter schematic RTL8101L c3892 BDW00 Compal Electronics
Contextual Info: A B C D E 1 1 Compal confidential 2 2 Schematics Document ClawHammer AMD K8 with nVIDIA Chrush K8 3 3 2004-04-16 REV: 1.0 4 4 Compal Electronics, Inc. Title THIS SHEET OF ENGINEERING DRAWING IS THE PROPRIETARY PROPERTY OF COMPAL ELECTRONICS, INC. AND CONTAINS CONFIDENTIAL

Contextual Info: Atmel AT42QT2160 16-key QMatrix Touch Sensor IC DATASHEET Features  Number of keys:  up to 16 keys, and one slider constructed from 2 to 8 keys  Technology:  patented spread-spectrum charge-transfer (transverse mode)  Number of I/O lines: