SI3471CDV Search Results

A2732

Abstract: S8175
Contextual Info: SPICE Device Model Si3471CDV Vishay Siliconix P-Channel 12-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

1094 m

Abstract: AN609
Contextual Info: Si3471CDV_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

Contextual Info: Si3471CDV Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 RDS(on) (Ω) ID (A)a 0.027 at VGS = - 4.5 V -8 0.036 at VGS = - 2.5 V -8 0.048 at VGS = - 1.8 V - 7.5 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET

Si3471CDV-T1-E3

Contextual Info: New Product Si3471CDV Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (Ω) ID (A)a 0.027 at VGS = - 4.5 V -8 0.036 at VGS = - 2.5 V -8 VDS (V) - 12 0.048 at VGS = - 1.8 V • TrenchFET Power MOSFET • PWM Optimized Qg (Typ.)

Contextual Info: Si3471CDV Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 RDS(on) (Ω) ID (A)a 0.027 at VGS = - 4.5 V -8 0.036 at VGS = - 2.5 V -8 0.048 at VGS = - 1.8 V - 7.5 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET

Si3471CDV-T1-E3

Contextual Info: New Product Si3471CDV Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (Ω) ID (A)a 0.027 at VGS = - 4.5 V -8 0.036 at VGS = - 2.5 V -8 VDS (V) - 12 0.048 at VGS = - 1.8 V • TrenchFET Power MOSFET • PWM Optimized Qg (Typ.)

Si3471CDV-T1-E3

Abstract: Si3471DV Si3471DV-T1 Si3471DV-T1-E3 mosfet 23 Tsop-6
Contextual Info: Specification Comparison Vishay Siliconix Si3471CDV vs. Si3471DV Description: Package: Pin Out: P-Channel, 12-V D-S MOSFET TSOP-6 Identical Part Number Replacements: Si3471CDV-T1-E3 replaces Si3471DV-T1-E3 Si3471CDV-T1-E3 replaces Si3471DV-T1 ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted

Si3471CDV-T1-E3

Abstract: SI3471CDV 285mm
Contextual Info: Si3471CDV Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 RDS(on) (Ω) ID (A)a 0.027 at VGS = - 4.5 V -8 0.036 at VGS = - 2.5 V -8 0.048 at VGS = - 1.8 V - 7.5 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET

BSS138 NXP

Abstract: FDC642P 2n7002 nxp AO3401 BSS123 NXP BSH103 IRLL014N PMV65XP BSH108 BSP250
Contextual Info: NXP small-signal N- and P-channel MOSFETs Small-signal MOSFETs optimized for a broad range of applications Our advanced MOSFET solutions deliver the flexibility and performance that today’s market demands. Choose from a wide range of general-purpose MOSFET solutions, available in a variety