SI3471DV Search Results

Si3471DV

Contextual Info: SPICE Device Model Si3471DV Vishay Siliconix P-Channel 12-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Si3471DV

Abstract: Si3471DV-T1 Si3471DV-T1-E3
Contextual Info: Si3471DV Vishay Siliconix New Product P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (Ω) ID (A) 0.031 at VGS = - 4.5 V - 6.8 0.040 at VGS = - 2.5 V - 6.0 0.053 at VGS = - 1.8 V - 5.2 • TrenchFET Power MOSFET: 1.8-V Rated Pb-free

Contextual Info: Si3471DV Vishay Siliconix New Product P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (Ω) ID (A) 0.031 at VGS = - 4.5 V - 6.8 0.040 at VGS = - 2.5 V - 6.0 0.053 at VGS = - 1.8 V - 5.2 • TrenchFET Power MOSFET: 1.8-V Rated Pb-free

Si3471DV

Abstract: Si3471DV-T1-E3 si3471
Contextual Info: Si3471DV Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 RDS(on) (Ω) ID (A) 0.031 at VGS = - 4.5 V - 6.8 0.040 at VGS = - 2.5 V - 6.0 0.053 at VGS = - 1.8 V - 5.2 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET: 1.8 V Rated

Si3471DV

Contextual Info: SPICE Device Model Si3471DV Vishay Siliconix P-Channel 12-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Si3471CDV-T1-E3

Abstract: Si3471DV Si3471DV-T1 Si3471DV-T1-E3 mosfet 23 Tsop-6
Contextual Info: Specification Comparison Vishay Siliconix Si3471CDV vs. Si3471DV Description: Package: Pin Out: P-Channel, 12-V D-S MOSFET TSOP-6 Identical Part Number Replacements: Si3471CDV-T1-E3 replaces Si3471DV-T1-E3 Si3471CDV-T1-E3 replaces Si3471DV-T1 ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted

33-8666

Abstract: mosfet 4456 AN609 Si3471DV
Contextual Info: Si3471DV_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

Si3471DV

Abstract: Si3471DV-T1 Si3471DV-T1-E3
Contextual Info: Si3471DV Vishay Siliconix New Product P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (Ω) ID (A) 0.031 at VGS = - 4.5 V - 6.8 0.040 at VGS = - 2.5 V - 6.0 0.053 at VGS = - 1.8 V - 5.2 • TrenchFET Power MOSFET: 1.8-V Rated Pb-free

Si3471DV

Contextual Info: Si3471DV New Product Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 D TrenchFETr Power MOSFET: 1.8-V Rated rDS(on) (W) ID (A) 0.031 @ VGS = - 4.5 V - 6.8 0.040 @ VGS = - 2.5 V - 6.0 0.053 @ VGS = - 1.8 V - 5.2 APPLICATIONS

Contextual Info: Si3471DV New Product Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 D TrenchFETr Power MOSFET: 1.8-V Rated rDS(on) (W) ID (A) 0.031 @ VGS = - 4.5 V - 6.8 0.040 @ VGS = - 2.5 V - 6.0 0.053 @ VGS = - 1.8 V - 5.2 APPLICATIONS

Siliconix

Abstract: Siliconix mosfet guide siliconix VN10KM Power MOSFET Cross Reference Guide FDC6323L fdn5618p 2n7002 siliconix BS170 equivalent of BS170 VN10KM equivalent
Contextual Info: Analog Discrete Interface & Logic Optoelectronics MOSFET Small Package Cross Reference 2003 Across the board. Around the world. MOSFET Small Package Cross Reference Guide Competitor Part Number 2N7000 2N7002 2N7002E 2N7002K 2SJ574 2SK3240 BS170 BSH108 BSS123

GS 069

Abstract: Si5902DC SPICE Device Model tsop6 marking 312 sC89-6 Si7705DN SI7100DN Si3865BDV Si5947DU Si3861BDV 1212-8
Contextual Info: Power MOSfETs for Portable applications Selector guide vishay Siliconix 2201 Laurelwood road P.o. Box 54951 santa clara, cA 95056 Phone: +1 408 988 8000 Fax: +1 408 567 8950 www.vishay.com NOTICE specifications of the products displayed herein are subject to change without notice. Vishay intertechnology, inc., or anyone on its behalf, assumes no