SI3473CDV Search Results
SI3473CDV Datasheets (3)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| SI3473CDV-T1-BE3 | Vishay Siliconix | P-CHANNEL 12-V (D-S) MOSFET | Original | 235.71KB | 11 | ||
| SI3473CDV-T1-E3 | Vishay Siliconix | FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 12V 8A 6-TSOP | Original | 11 | |||
| SI3473CDV-T1-GE3 | Vishay Siliconix | FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 12V 8A 6-TSOP | Original | 11 |
SI3473CDV Price and Stock
Vishay Intertechnologies SI3473CDV-T1-GE3Transistor: P-MOSFET; TrenchFET®; unipolar; -12V; -8A; Idm: -20A |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SI3473CDV-T1-GE3 | 2,539 | 1 |
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SI3473CDV-T1-GE3 | 33,000 | 3,000 |
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| SI3473CDV-T1-GE3 | 11,895 | 7 |
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| SI3473CDV-T1-GE3 | 2,539 | 200 |
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| SI3473CDV-T1-GE3 | 1,620 | 24 |
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SI3473CDV-T1-GE3 | Tape & Reel | 3,000 | 19 Weeks | 3,000 |
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SI3473CDV-T1-GE3 | 14,642 |
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SI3473CDV-T1-GE3 | 33,000 | 19 Weeks | 3,000 |
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| SI3473CDV-T1-GE3 | Cut Strips | 11,895 | 1 |
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| SI3473CDV-T1-GE3 | Cut Strips | 1,620 | 19 Weeks | 1 |
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SI3473CDV-T1-GE3 | Cut Tape | 56,232 | 5 |
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| SI3473CDV-T1-GE3 | Tape & Reel | 56,232 | 100 |
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| SI3473CDV-T1-GE3 | Tape & Reel | 27,000 | 3,000 |
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| SI3473CDV-T1-GE3 | Cut Tape | 3,000 |
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| SI3473CDV-T1-GE3 | Tape & Reel | 3,000 |
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SI3473CDV-T1-GE3 | Reel | 3,000 |
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SI3473CDV-T1-GE3 | 84,000 | 27 Weeks | 3,000 |
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Vishay Intertechnologies SI3473CDV-T1-E3Transistor: P-MOSFET; TrenchFET®; unipolar; -12V; -8A; Idm: -20A |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SI3473CDV-T1-E3 | 3,000 |
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Get Quote | |||||||
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SI3473CDV-T1-E3 | Tape & Reel | 19 Weeks | 3,000 |
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SI3473CDV-T1-E3 | 3,667 |
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SI3473CDV-T1-E3 | Tape & Reel | 3,000 |
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| SI3473CDV-T1-E3 | Cut Tape | 3,000 |
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| SI3473CDV-T1-E3 | Tape & Reel | 3,000 |
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Buy Now | |||||||
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SI3473CDV-T1-E3 | Reel | 3,000 |
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SI3473CDV-T1-E3 | 27 Weeks | 3,000 |
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Vishay Intertechnologies SI3473CDV-T1-BE3Trans MOSFET P-CH 12V 8A 6-Pin TSOP T/R |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SI3473CDV-T1-BE3 | 15,000 | 3,000 |
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SI3473CDV-T1-BE3 | Tape & Reel | 3,000 | 19 Weeks | 3,000 |
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SI3473CDV-T1-BE3 |
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SI3473CDV-T1-BE3 | 15,000 | 19 Weeks | 3,000 |
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SI3473CDV-T1-BE3 | Bulk | 3,000 | 1 |
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SI3473CDV-T1-BE3 | Reel | 51,000 | 3,000 |
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SI3473CDV-T1-BE3 | 35,648 | 1 |
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SI3473CDV-T1-BE3 | 28,518 |
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| SI3473CDV-T1-BE3 | 28,518 |
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Vishay Intertechnologies SI3473CDVT1GE3P-CHANNEL 12-V (D-S) MOSFET Small Signal Field-Effect Transistor, 8A I(D), 12V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SI3473CDVT1GE3 | 1,465 |
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SI3473CDV Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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Contextual Info: New Product Si3473CDV Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 RDS(on) (Ω) ID (A)a 0.022 at VGS = - 4.5 V -8 0.028 at VGS = - 2.5 V -8 0.036 at VGS = - 1.8 V -8 • TrenchFET Power MOSFET • PWM Optimized Qg (Typ.) |
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si3473cdvsi3473cdv-t1-e308-apr-05 | |
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Contextual Info: New Product Si3473CDV Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 RDS(on) (Ω) ID (A)a 0.022 at VGS = - 4.5 V -8 0.028 at VGS = - 2.5 V -8 0.036 at VGS = - 1.8 V -8 • Halogen-free According to IEC 61249-2-21 Definition |
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si3473cdv2002/95/ecsi3473cdv-t1-e3si3473cdv-t1-ge3+1 | |
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Contextual Info: SPICE Device Model Si3473CDV Vishay Siliconix P-Channel 12-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range |
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si3473cdv18-jul-08 | |
69947Contextual Info: New Product Si3473CDV Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 RDS(on) (Ω) ID (A)a 0.022 at VGS = - 4.5 V -8 0.028 at VGS = - 2.5 V -8 0.036 at VGS = - 1.8 V -8 • TrenchFET Power MOSFET • PWM Optimized Qg (Typ.) |
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si3473cdvsi3473cdv-t1-e318-jul-0869947 | |
Si3473DV
Abstract: Si3473DV-T1 Si3473DV-T1-E3 SI3473DVT1E3
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si3473cdvsi3473dvsi3473cdv-t1-e3si3473cdv-t1-ge3+3 | |
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Contextual Info: New Product Si3473CDV Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 RDS(on) (Ω) ID (A)a 0.022 at VGS = - 4.5 V -8 0.028 at VGS = - 2.5 V -8 0.036 at VGS = - 1.8 V -8 • Halogen-free According to IEC 61249-2-21 Definition |
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si3473cdv2002/95/ecsi3473cdv-t1-e3si3473cdv-t1-ge3+2 | |
mosfet 4800
Abstract: 4800 mosfet AN609
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si3473cdvan60925-mar-08mosfet 4800+1 | |
69947Contextual Info: New Product Si3473CDV Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 RDS(on) (Ω) ID (A)a 0.022 at VGS = - 4.5 V -8 0.028 at VGS = - 2.5 V -8 0.036 at VGS = - 1.8 V -8 • Halogen-free According to IEC 61249-2-21 Definition |
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si3473cdv2002/95/ecsi3473cdv-t1-e3si3473cdv-t1-ge3+2 | |
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Contextual Info: New Product Si3473CDV Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 RDS(on) (Ω) ID (A)a 0.022 at VGS = - 4.5 V -8 0.028 at VGS = - 2.5 V -8 0.036 at VGS = - 1.8 V -8 • Halogen-free According to IEC 61249-2-21 Definition |
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si3473cdv2002/95/ecsi3473cdv-t1-e3si3473cdv-t1-ge3+2 | |
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Contextual Info: SPICE Device Model Si3473CDV www.vishay.com Vishay Siliconix P-Channel 12 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C |
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si3473cdv2002/95/ec2011/65/eujs709a+1 | |
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Contextual Info: New Product Si3473CDV Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 RDS(on) (Ω) ID (A)a 0.022 at VGS = - 4.5 V -8 0.028 at VGS = - 2.5 V -8 0.036 at VGS = - 1.8 V -8 • Halogen-free According to IEC 61249-2-21 Definition |
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si3473cdv2002/95/ecsi3473cdv-t1-e3si3473cdv-t1-ge3+3 | |
BSS138 NXP
Abstract: FDC642P 2n7002 nxp AO3401 BSS123 NXP BSH103 IRLL014N PMV65XP BSH108 BSP250
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ot223ot883pht8n06ltbsp030+13 | |
si7121
Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
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mediu33-4-9337-2727vmn-sg2127-1210si7121si4914b+8 | |
Diode SOT-23 marking 15d
Abstract: SI4210 si4812b SI-4102 SI7149DP SiM400 si4932 si7135 SiB914 SI4477
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diod92vmn-sg2127-0911diode sot-23 marking 15dsi4210+8 |