C612 Search Results

scr prx

Abstract: lt742
Contextual Info: 74-C 0 1 6 7 1 POUEREX INC ^?4 DeT | T E m t B l D High Speed OQOlt.71 7 Silicon Controlled Rectifier 2 00 0 Volts T-25-20 C612 1150 Amps RMS AM PLIFYING GATE c The General Electric device type C612 is a new pressure mounted, high current SCR designed for power switching at high voltage and high frequen­

photovoltaic sensor

Abstract: PDB-V612-1 photoconductive 110 photovoltaic PDB-C612 photoconductive light sensor PHOTOVOLTAIC CELL PDB-C612-1 PDB-C612-2 PDB-C612-3
Contextual Info: PHOTONIC Silicon Photodiode, Blue Enhanced Solderable Chips Photoconductive Type PDB-C612 Photovoltaic Type PDB-V612 DETECTORS INC. PACKAGE DIMENSIONS INCH mm 0.700 [17.78] 0.700 [17.78] 0.700 [17.78] 6.25 [158.7] 1.00 [25.4] 0.035 [0.89] 0.200 [5.08] 0.200 [5.08]

GE C712 thyristor

Abstract: GE C712 scr c712l C712L c712l thyristor SCR 400V 1000A SCR C712 SCR C648 GE thyristor scr SCR C612
Contextual Info: 700 TO 1500 A M P E R E S C648 C612 C613 C712 A M P L IF Y IN G GATE A M P L IF Y IN G GATE A M P L IF Y IN G GATE A M P L IF Y IN G GATE 500 1200 1500-1800 1150 700 800 1150 700 800 1500 - 800 1500 GE TYPE CONSTRUCTION ELECTRICAL SPECIFICATIONS VOLTAGE RANGE

RS 302 440 40

Abstract: C612 C612L C612PE C612PM C612PN C612PS C612PT C613L C613PT
Contextual Info: High Speed Silicon Controlled Rectifier 2000 Volts C612 1150 Amps RMS a m p l if y in g g a t e The General Electric device type C612 is a new pressure m ounted, high current SCR designed for power switching at high voltage and high frequen­ cies up to 5 KHz . The C612 gate structure has an involute, rnterdigitated

C712L

Abstract: TO200AC C648PB c712pd C612L c712pn C713 C612 C613 C648E
Contextual Info: INVERTER SCRs RICHARDSON/ NATIONAL EL LEE D NATIONAL T Y P E NO. VOLTAGE R A N G E Peak on-state sinusoidal current @ Tc =65°C, 50% duty A I tim • 7734T17 OOOOL'ìS 57b ■ NAT C612 C613 C648 C712 C713 1300-2000 1300-2000 500-1200 1300-2000 1300-2000

GE C712

Abstract: C612 C613 C648 C648E C648M C648P C648T C712 SCR firing inverter circuit
Contextual Info: 700 TO 1500 AMPERES C648 C612 C 613 C 712 A M P L IF Y IN G G ATE A M P L IF Y IN G G A TE A M P L IF Y IN G G A TE A M P L IF Y IN G GATE 5 00 1200 1500-1800 GE TYPE CONSTRUCTION ELECTRICAL SPECIFICATIONS VOLTAGE RANGE 1500-2000 S 1500-2000 FORWARD CONDUCTION

Thyristor c612

Abstract: C612L C612 C612PE C612PM C612PN C612PS C612PT 20-CX
Contextual Info: C612 40 mm Inverter Thyristor 2000V / 735A / 60us S IL IC O N ^ ^TpOWGR The C612 is ideal for forced commutation. It is processed by multi-diffusion, utilizing 40mm diameter silicon with a unique involute pilot gate. It is supplied in a disk package ready to

Contextual Info: Solderable Silicon Photodiodes PDB-C612-2 PACKAGE DIMENSIONS INCH [mm] PACKAGE DIMENSIONS INCH [mm] ± .050 [1.27] 2X 6.25 [158.7] 2X .250 [6.35] 2X TINNED RED 30 AWG PVC WIRE, ANODE BLACK 30 AWG PVC WIRE, CATHODE .021 [0.53] .014 [0.36] CHIP DIMENSIONS INCH [mm]

alcoa electrical joint compound

Abstract: SF1154 C613 3M Electric Joint Compound C612 C648 C648E C648M C648P C648T
Contextual Info: 700 TO 1500 AMPERES C648 C612 C613 C712 A M P L IF Y IN G GATE A M P L IF Y IN G GATE A M P L IF Y IN G GATE A M P L IF Y IN G GATE 500 1200 1 5 0 0 -1 8 0 0 GE TYPE CONSTRUCTION ELE C T R IC A L SPECIFIC AT IO N S VO LTAG E RANG E FO RW ARD CONDUCTION . 'T R M S

PDB-C612

Abstract: PDB-C612-2 5v810
Contextual Info: Solderable Silicon Photodiodes PDB-C612-2 PACKAGE DIMENSIONS INCH [mm] PACKAGE DIMENSIONS INCH [mm] ± .050 [1.27] 2X 6.25 [158.7] 2X .250 [6.35] 2X TINNED RED 30 AWG PVC WIRE, ANODE BLACK 30 AWG PVC WIRE, CATHODE .021 [0.53] .014 [0.36] CHIP DIMENSIONS INCH [mm]

Pw380us

Abstract: transistor c 1923 TIP42C TIP42CE3
Contextual Info: Spec. No. : C612E3 Issued Date : 2004.07.14 CYStech Electronics Corp. Revised Date : Page No. : 1/4 6A PNP Epitaxial Planar Power Transistor TIP42CE3 Description TIP42CE3 is designed for use in general purpose amplifier and switching applications. Features

diode c648

Abstract: C648 GE SCR 1000 AMP scr c385 GE SCR C648 c358 C612 C613 C648E 25C312
Contextual Info: 700 TO 1500 A M P E R E S C648 C612 C613 C712 A M P L IF Y IN G G A TE A M P L IF Y IN G GATE A M P L IF Y IN G GATE A M P L IF Y IN G GATE 500 1200 1500-1800 1150 700 800 1150 700 800 1500 - 800 1500 GE TYPE CONSTRUCTION ELE C T R IC A L SPECIFIC AT IO N S

C6118A

Abstract: C6121 ul 2464 C6118 ul 2464 cable ul2464
Contextual Info: Electronics Communication & Control Cable, Multi-Paired Multi-Paired, Unshielded UL 2464, NEC Type CM UL c(UL), CSA CMG Product Construction: Conductor: • 18 AWG fully annealed stranded tinned copper per ASTM B-33 • Twisted pairs Insulation: • Premium-grade, coIor-coded S-R PVC

r727

Contextual Info: User's Guide SLLU180 – June 2013 TLK10232 Dual-Channel XAUI/10GBASE-KR Transceiver with Crosspoint Evaluation Module EVM Graphical Users Interface User’s Guide This user’s guide describes the usage and construction of the TLK10232 evaluation module (EVM). This

J239

Abstract: HS6237 CP9035 vampower 8 vampower j246 D880 C6250 CP9030 J241
Contextual Info: Betriebsanleitung für Beckhoff CP-Link Karten CP9030 / CP9035 Version: 1.5 Datum: 05.10.2009 Allgemeine Hinweise Inhaltsverzeichnis 1. Allgemeine Hinweise 5 2. Beckhoff CP-Link Systembeschreibung 6 Hinweise zur Dokumentation Haftungsbedingungen Erklärung der Sicherheitssymbole

CX9010-N031

Abstract: Beckhoff Ek1100 ES3004 bc515 hengstler 890 IL2301bxxx Fisher ROC 107 modbus CU2508 KL2541 HEIDENHAIN EnDat 2.1
Contextual Info: BECKHOFF New Automation Technology Ürünlere Genel Bakış Endüstriyel PC Gömülü PC Lightbus I/O Terminalleri Fieldbus Kutusu Sürücü Teknolojisi PC-Fieldbus kartları, Ağ anahtarları 2 Automation Motion I/O IPC Beckhoff Ürünlerine Genel Bakış | Bu katalog, Endüstriyel bilgisayarlar, saha haberleşmesi, sürücü teknolojileri, otomasyon yazılımları

c 337 25

Abstract: SC160D tic 2160 triac V130HE150 General electric SCR C220 ES5449 4533 gem 2n4401 2n3904 2222a 1N21 es5451
Contextual Info: GENERAL ^ E L E C T R I C SEMICONDUCTORS SEMICONDUCTEURS * HALBLEITER CONTENTS SOMMAIRE INHALT I N D E X . 3 I N D E X . 3

SAMSUNG 0805 thick film resistor

Abstract: SAMSUNG DATASHEET CHIP CAPACITOR Samsung Capacitor 0805 capacitors samsung IRF7821 soic8 irf7832 chip resistor R10 Thick Film Chip Resistor Network SAMSUNG capacitors SM1206 DATASHEET
Contextual Info: ISL88550AEVAL1Z Kit: Synchronous Step Down Controller with Sourcing and Sinking LDO Regulator Application Note July 23, 2008 General Description Features ISL88550A integrates a synchronous buck PWM controller to generate VDDQ, a sourcing and sinking LDO linear

transistor C9012

Abstract: transistor c9018 dc05 7 segments TDA7075AQ UV1315 tda8842 circuit diagram transistor c9014 c9015 transistor c9018 transistor transistor C9015
Contextual Info: APPLICATION NOTE The GTV1000 Global TV Receiver AN98051 Quvyvƒ†ÃTr€ vp‚qˆp‡‚…† The GTV1000 Global TV Receiver Application Note AN98051 Abstract The GTV1000 receiver has been designed around the TDA884X TV signal processor. The large signal part is suited for 90° picture tubes and build on one board with the small signal part.

smd diode c644

Abstract: diode c649 smd diode c548 C748 SMC transistor C734 smd diode c549 C706 diode c624 DIODE smd diode C645 diode c741
Contextual Info: Octal, 12-Bit, 40/50 MSPS Serial LVDS 1.8 V A/D Converter AD9222 8 ADCs integrated into 1 package 93 mW ADC power per channel at 50 MSPS SNR = 70 dB to Nyquist ENOB = 11.3 bits SFDR = 84 dBc Excellent linearity DNL = ±0.3 LSB (typical) INL = ±0.4 LSB (typical)

c606 Schottky diode

Abstract: avago bar code on the box smd diode c644
Contextual Info: Octal, 14-Bit, 50 MSPS, Serial LVDS, 1.8 V ADC AD9252 8 analog-to-digital converters ADCs integrated into 1 package 93.5 mW ADC power per channel at 50 MSPS SNR = 73 dB (to Nyquist) ENOB = 12 bits SFDR = 84 dBc (to Nyquist) Excellent linearity DNL = ±0.4 LSB (typical); INL = ±1.5 LSB (typical)

2SA124

Abstract: OC343 2SA123 MA520 TF65 OC54 t1826 2n1750 2SA37 OC56
Contextual Info: SYMBOLS & CODES EXPLAINED IN T Y P E No. CROSS-INDEX & TE C H N IC A L SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. This manufacturer-identifying symbol (assigned by D .A .T.A .) is an integral part of the type number (in Type No. Cross Index,

EATON CM20A

Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
Contextual Info: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid­ ing complete service, fast delivery and in-depth inventory. Our main

NV18

Abstract: isl6247 transistor SMD w26 Socket AM2 Compal Electronics SMD SOT23 A53 rt8101l p25 BTQ00 RTL8101L compal
Contextual Info: A B C D E 1 2 1 BTQ00 Rev1.0 Schematics Document 2 Intel Prescott uFCPGA-478 / P4 Northwood with Springdale / ICH5 / nVIDIA NV18/34/31M chipset 2003/05/15 3 3 4 4 Compal Electronics, Inc. Title THIS SHEET OF ENGINEERING DRAWING IS THE PROPRIETARY PROPERTY OF COMPAL ELECTRONICS, INC. AND CONTAINS CONFIDENTIAL