scr prx
Abstract: lt742
Contextual Info: 74-C 0 1 6 7 1 POUEREX INC ^?4 DeT | T E m t B l D High Speed OQOlt.71 7 Silicon Controlled Rectifier 2 00 0 Volts T-25-20 C612 1150 Amps RMS AM PLIFYING GATE c The General Electric device type C612 is a new pressure mounted, high current SCR designed for power switching at high voltage and high frequen
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t-25-20max/10scr prxlt742 |
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C702 diode
Abstract: sinewave inverter 5000 watt SCR 6 pulse Gate Drive C612 C612L C612PE C612PM C612PN C612PS Diode SJ 9c
Contextual Info: INVERTER SCR's SELECTOR GUIDE 2000 1900 1000 1700, 1600 1500 1400 1300 i/i 5 1200 § J> Iioo 9 z 5 1000 (E g 900 < g 800 700 600 500 tf IO 400 u V * IO fO o 300 <0 ro o * tO fO o 200 100 25 35 63 MO 225 275 300 400 500 700 800 850 900 1000 1150 1500 RMS C U R R E N T -A M P E R E S
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c702 diodesinewave inverter 5000 wattscr 6 pulse gate drivec612+6c612lc612pec612pmc612pnc612psdiode sj 9c
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RS 302 440 40
Abstract: C612 C612L C612PE C612PM C612PN C612PS C612PT C613L C613PT
Contextual Info: High Speed Silicon Controlled Rectifier 2000 Volts C612 1150 Amps RMS a m p l if y in g g a t e The General Electric device type C612 is a new pressure m ounted, high current SCR designed for power switching at high voltage and high frequen cies up to 5 KHz . The C612 gate structure has an involute, rnterdigitated
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rs 302 440 40c612c612lc612pe+6c612pmc612pnc612psc612ptc613lc613pt
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C712L
Abstract: TO200AC C648PB c712pd C612L c712pn C713 C612 C613 C648E
Contextual Info: INVERTER SCRs RICHARDSON/ NATIONAL EL LEE D NATIONAL T Y P E NO. VOLTAGE R A N G E Peak on-state sinusoidal current @ Tc =65°C, 50% duty A I tim • 7734T17 OOOOL'ìS 57b ■ NAT C612 C613 C648 C712 C713 1300-2000 1300-2000 500-1200 1300-2000 1300-2000
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7734t1c648nc648tc648p+15c648pac648pbc612pcc613pcc712pcc713pcc712lto200acc712pdc612lc712pnc713c612c613c648e
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GE C712
Abstract: C612 C613 C648 C648E C648M C648P C648T C712 SCR firing inverter circuit
Contextual Info: 700 TO 1500 AMPERES C648 C612 C 613 C 712 A M P L IF Y IN G G ATE A M P L IF Y IN G G A TE A M P L IF Y IN G G A TE A M P L IF Y IN G GATE 5 00 1200 1500-1800 GE TYPE CONSTRUCTION ELECTRICAL SPECIFICATIONS VOLTAGE RANGE 1500-2000 S 1500-2000 FORWARD CONDUCTION
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488bhiimige c712c612c613+7c648c648ec648mc648pc648tc712scr firing inverter circuit
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Thyristor c612
Abstract: C612L C612 C612PE C612PM C612PN C612PS C612PT 20-CX
Contextual Info: C612 40 mm Inverter Thyristor 2000V / 735A / 60us S IL IC O N ^ ^TpOWGR The C612 is ideal for forced commutation. It is processed by multi-diffusion, utilizing 40mm diameter silicon with a unique involute pilot gate. It is supplied in a disk package ready to
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c612lc612ptc612pnc612ps+9c612pmc612pec612/6rt420v/150v/1010jusecthyristor c612c61220-cx
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